808nm大功率半导体量子阱激光器锁相列阵

在材料研究和器件特性分析的基础上，采用分子束外延方法（ＭＢＥ），成功地研制出低阈值电流密度、高量子效率、折射率缓变分别限制异质结单量子阱结构（ＧＲＩＮ－ＳＣＨ－ＳＱＷ）大功率半导体激光器锁相列阵，最大线性输出功率为１．５Ｗ（室温，连续），激射波长８０８±４ｎｍ，光－电转换效率最高达６２％，器件寿命考核（２５℃，ＣＷ）超过１０００小时无明显退化。     

941nm连续波高功率半导体激光器线阵列

用金属有机化合物气相淀积(MOCVD)技术生长了InGaAs／GaAs／AlGaAs分别限制应变单量子阱激光器材料。利用该材料制成了半导体激光器线阵列,连续波工作条件下的中心激射波长为940．5nm,输出功率高达37．7W(45A、2．0V),斜率效率可达0．99W／A(外微分量子效率为75％),最高转换效率超过45％,阈值电流密度为117A／cm^2,该波长的半导体激光器是Yb：YAG固体激光器的理想泵浦源。     

940nm列阵窗口半导体激光器

940nm列阵窗口半导体激光器     

准连续在功率二维层叠量子阱激光器列阵

研究了大功率列阵器件的量子阱结构，材料生长，列阵结构，了技术与封装技术，研制了６条层叠ＧａＡｓ／ＡｌＣａＡｓ量子阱激光器列阵，其峰值功率为４０４Ｗ，电－光转换效率高达４３．３％。     

808nm高功率量子阱远结激光器及其电噪声特性

介绍了８０８ｎｍ高功率最子阱远结半导体激光器的结构和器件特性,测试了器件的低步电噪声,讨论了噪声与频率、注入电流及器件质量的关系。结果表明,８０８ｎｍ高功率量子阱远结半导体激光的阈值电流在老化初期随时间的延续而降低,其噪声在低频段主要为１／ｆ噪声,且以阈值附近有量大值,器件噪声与器件质量有一定的相关性。     

无铝大功率激光器列阵研制成功

由中科院长春光机所承担的“808nm百瓦级连续波无铝量子阱迭阵激光器研制”项目通过了鉴定。该项目在国际上首次采用光源成像调节技术，实现了五个高功率激光器bar组成的激光器线阵(5bar)光束共线，研制出了连续输出217W、光谱半宽为2．5mm、5bar共线性好的激光列阵模块，达到国际先进水平。     

915-980nm应变量子阱激光器新进展

报道了915～980nm半导体激光器的最新进展,宽条激光器输出功率为0.2～2.0W,最大输出功率大于5W;基横模脊形波导半导体激光器输出功率达400mW,水平和垂直方向远场发射角分别为70和230,组合件输出功率大于150mW。     

用分子束外延制备红外锑化物激光器和探测器材料

用固态源分子束外延方法,在GaSb衬底上成功地生长出四元系Ⅲ-V族锑化物单层、多量子阱和激光器、探测器结构材料、并用这些材料制备了2μm波段室温准连续脊波导AlGaAsSb/InGaAsSb多量子阱。     

量子点激光器及其应用研究

报道了分子束外延生长出自组装垂直耦合ＩｎＡｓ／ＧａＡｓ大功率量子点激光器材料和器件。对腔长为８００μｍ,室温下和７７Ｋ下边续激射阈值电流密度分别为２１８Ａ／Ｃｃｍ＾２和４９Ａ／ｃｍ＾２,波长为９６０ｎｍ,最大输出功率大于１Ｗ。首次报道在０．５４Ｗ工作下,寿命超过３０００小时,功率仅下降０．４９display status０     

锑化物激光器的研究进展

锑化物激光器在2～5μm波段具有广阔的应用前景.综述了锑化物激光器的研究进展,重点论述了材料生长、结构设计、器件工艺、封装技术以及新的器件结构,讨论了其中存在的主要技术问题,并指出了锑化物激光器不断向长波长方向扩展的趋势.     

大功率半导体激光器全固态风冷散热系统

设计并制作了一种全固态大功率半导体激光阵列恒温散热系统。它利用半导体制冷器对大功率半导体激光阵列吸热,然后经由风冷散热。经测试,单bar激光阵列连续输出功率达到15.28W,双 bar 阵列输出达 27.8W 时,全部达到风冷散热控温精度±0.1 ;当环境温度达到 45 时,仍然能够保证激光阵列的正常使用。     

Surface-emitting semiconductor lasers and laser arrays

Various types of surface-emitting semiconductor lasers are reviewed along with their anticipated applications. The recent progress in grating-coupled surface-emitting (GSE) lasers is particularly emphasized. SuchGSE arrays have operated continuously to more than 3 W and pulsed to more than 30 W. They have obtainedCW threshold current densities of under 140 A/cm² withCW differential quantum efficiencies of 20 to 40% per surface. Linewidths in the 40 MHz range have been obtained with output powers of 100 to 250 mW. The arrays typically consist of 10–30 mutually injection-coupled gain sections with 10 laterally coupled ridge-guided lasers in each gain section. A single GaInAs strained-layer quantum well with a graded index separate confinement heterostructure geometry allows junction down mounting with light emission through the transparent GaAs substrate. A surface relief grating is used for feedback and outcoupling.     

外腔激光器光子寿命对波长转换特性的影响

作为自动交换光网络中的核心器件,全光波长转换器发挥着重要作用。本文根据光纤光栅外腔半导体激光器(FBG-ECL)实现波长转换的理论模型,重点研究光子寿命对波长转换器调制特性的影响;利用速率方程,数值求解了不同光子寿命下波长转换特性;通过自行搭建的基于FBG-ECL的实验平台进行了实验分析,发现理论分析和实验数据是吻合的。     

Applications and performance of high power lasers and in the battlefield

This paper reviews the status and applications of a defensive weapon based on high power lasers, in the battlefield. Laser weapon is a novel concept which utilizes high power laser beam to traverse the distance into incoming objects at a speed of light, and then, destroy or disable it. Various types of lasers and configurations will be discussed in this review including gas lasers, solid state lasers, fiber lasers and the free-electron laser. We will discuss various configurations such as airborne laser (ABL), diode pumped crystals and disk lasers as well as heat-capacity lasers. Recent applications of ultrafast solid state lasers for non-lethal or low collateral damage applications will be presented.     

Detection of high-temperature water vapor at 940 nm with vertical-cavity surface-emitting lasers

A vertical-cavity surface-emitting laser was used to study the absorption of water vapor in the 940 nm region. Measurements for several absorption lines within the 2 v1 + V3 vibrational band were performed. Line strengths at room temperature and in a heated absorption cell over the temperature range of 420-970 K were obtained. The line strength values were in good agreement with simulations based on the values of the HITRAN 2004 database. The measurements also showed that water vapor transitions near 940 nm are suitable for sensitive temperature determination.     

Low-resistance p-type ohmic contacts for high-power InGaAs/GaAs-980 nm CW semiconductor lasers

In this paper, the optimization of ohmic contacts for semiconductor lasers based on InGaAs/GaAs/GaAlAs layers is reported. Transmission electron microscopy (TEM) and electrical methods were used to study extensively the Pt/Ti/Pt/Au metallization system. The contact fabrication technology was optimized towards achieving the lowest electrical resistance. The technological control and optimization concerned the contact annealing temperature and thickness of metallic layers that form the contact. The average specific contact resistance was below 5×10⁻⁶ Ω cm² (with the record value of 8×10⁻⁷ Ω cm²) for the 10 nm Pt/20 nm Ti/30 nm Pt/150 nm Au system. The presented system was used in fabrication of continuous wave (CW) operated laser diodes. The chips mounted on passively cooled copper block achieved optical powers over 1 W, threshold current density values of 140-160 A/cm² and differential efficiencies above 1 W/A. The value of the characteristic temperature T₀ for discussed lasers varied in the range of 180-200 K.     

Total-reflection active-mirror amplifier for high pulse energy and high average power by using a composite ceramic

A total-reflection active-mirror (TRAM) amplifier is functionally designed by using a composite ceramic for high pulse energy and high average power. A chirped-pulse regenerative amplifier with a cryogenic TRAM has been successfully demonstrated as a feasibility study. A 3.5 mJ pulse energy is obtained at a repetition rate of 100 Hz. The corresponding energy fluence on the TRAM is as high as 1.5 J/cm² for 0.46 ns short pulses. The M²-factor is below 1.1 and no significant beam distortion is observed.     

大功率半导体激光光束整形技术及其在泵浦方面的应用

在分析大功率半导体激光器的光束输出特性的基础上,针对Ｎｄ：ＹＶＯ４／ＫＴＰ腔内倍频激光器的泵浦光源要求,研究了大功率半导体激光器光束输出的多种整形方法,同时比较了不同泵浦光束形状对Ｎｄ：ＹＶＯ４／ＫＴＰ腔内倍频激光器输出效率的影响。     

外腔激光器实现波长变换的理论及实验

理论上从半导体激光器的速率方程出发,利用其增益饱和效应,提出了光纤光栅外腔半导体激光器实现波长变换的理论模型。利用此模型对入射波为高斯波时的波长变换进行了数值模拟。实验实测了光纤光栅外腔半导体激光器的波长变换前后的谱线,得到带宽 0.1nm,边模抑制比为37.9dB 的激光谱线,并且利用此波长的外腔激光器得到了波长转换间隔为 8nm 的激光谱线。理论分析和实验结果证明,光纤光栅外腔半导体激光器在实现波长变换方面具有很好的线性响应特性。