共查询到19条相似文献,搜索用时 93 毫秒
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微机械陀螺传感器模型与接口电路的混合模拟 总被引:1,自引:0,他引:1
根据微机械陀螺的动力学方程建立了组合微机械陀螺振动特性和电学特性的传感器等效电路模型 ,并通过电路模拟工具 PSPICE对模型进行验证。利用该模型与接口电路的混合模拟 ,可以分析陀螺整个系统的工作性能。模拟分析的结果验证了该模型可以应用于微机械陀螺接口电路的设计和优化 相似文献
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介绍一种微机械音叉陀螺外围电路的基本结构及各组成部分的工作原理。针对机械敏感单元设计了陀螺的外围电路,通过系统分析,建立了数学模型,并利用Matlab对整个模型进行行为级仿真,验证所设计电路的可行性。仿真结果为电路的设计、调试提供了有利的分析方法和手段,具有一定指导意义。 相似文献
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将z轴微机械陀螺两个模态的机械噪声效应等效为各自在单位噪声力作用下的振动,根据陀螺的工作原理得到两个噪声力作用下陀螺敏感模态的机械输出噪声。建立了包含运放和电路板非理想因素在内的接口电路的噪声模型。结合机械噪声模型和接口电路模型噪声,建立了包括结构参数和电路最小检测电容量在内的陀螺的噪声等效输入角速度模型,为陀螺的设计优化提供了参考。分析了结构参数对陀螺等效输入角速度噪声影响,并采用两个参数不同的电容式z轴微机械陀螺进行了实验。结果表明,通过结构参数的调整,将电容式z轴微机械陀螺的输出噪声从414μV/Hz降低至235μV/Hz。 相似文献
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硅微陀螺仪具有体积小、功耗低、可靠性高等优点,在惯性测量领域有着广泛的应用前景。为了提高陀螺仪测量的灵敏度和信噪比,提出了一种新颖的信号检测方案。该方案研究了硅微陀螺仪驱动模态、检测模态的动力学方程,建立了陀螺仪等效力学模型,观察陀螺仪的动态特性,探讨硅微陀螺仪信号检测方法,并对陀螺仪的机械结构及检测电路进行系统仿真。仿真结果验证了相位检测方案的可行性。 相似文献
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介绍了微波测速雷达的基本原理与结构模型,提出了频率为950 MHz的连续波多普勒测速雷达射频前端收发电路的设计方法,并对该电路的振荡条件,混频特性,放大原理进行了详细分析。利用OrCAD/PSpice9.2仿真软件,对射频电路收发系统进行仿真分析,仿真结果进一步验证了电路设计的合理性和可行性。 相似文献
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基于GaAs材料和器件的制造工艺,介绍了纳米膜隧穿器件和微陀螺的结构设计方法和工艺加工方法。阐述了基于纳米膜隧穿效应微陀螺的工作原理,对纳米膜隧穿器件和微陀螺的结构进行了设计,分析了微陀螺的模态频率设计和匹配仿真。采用反应离子刻蚀(RIE)刻蚀和感应耦合等离子体(ICP)刻蚀方法分别对隧穿器件和微陀螺结构进行了加工,利用扫描电镜观测,加工结果较好。利用冲击信号测试了微陀螺的频率响应,讨论了微陀螺的模态频率测试结果和匹配情况,证明微陀螺在驱动方向和检测方向上能够工作且模态频率匹配程度较好。实验结果表明,提出的GaAs材料微陀螺结构设计方法和工艺加工方法是可行的,能够应用于GaAs基微陀螺结构设计与制造。 相似文献
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The small-signal frequency response of silicon dioxide-silicon interface and oxide trap states has been investigated and interpreted using a series R-C equivalent circuit model instead of the commonly used parallel R-C equivalent circuit model. It is shown that the series equivalent circuit model is advantageous in extracting the time constants of the oxide traps located in the silicon dioxide layer from experimental data and allows a determination of the spatial extension of the oxide traps. Comparisons of a two-step model, consisting of the Shockley-Read-Hall transition between the band and the interface states and the elastic tunneling transition between the interface and oxide trap states, with experimental data are given to illustrate the range of experimental data required to evaluate an unique set of tunneling and SRH parameters. 相似文献
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Room temperature frequency dispersion of the admittance of Metal-Oxide-Semiconductor (MOS) capacitors made on non-degenerate n-type silicon substrate with (111) surface orientation was studied. A simplified lumped equivalent circuit model which takes into account the interface edge effect, i.e. carrier generation-recombination-trapping via interface states near the edge of the surface inversion region, is proposed and found to be in good agreement with experimental data. Our model also suggests another method of calculating the density of interface states. Fundamental properties of interface states are estimated from experimental data. A self-consistency check is made among the values of equivalent circuit elements to substantiate our model. 相似文献
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A simple analytical threshold voltage model for short-channel fully depleted SOI MOSFETs has been derived. The model is based on the analytical solution of the two-dimensional potential distribution in the silicon film (front silicon), which is taken as the sum of the long-channel solution to the Poisson's equation and the short-channel solution to the Laplace equation, and the solution of the Poisson's equation in the silicon substrate (back silicon). The proposed model accounts for the effects of the back gate substrate induced surface potential at the buried oxide-substrate interface which contributed an additional 15–30% reduction in the threshold voltage for the devices used in this work. Conditions on the back gate supply voltage range are determined upon which the surface potential at the buried oxide-substrate interface is accumulated, depleted, or inverted. The short-channel associated drain induced barrier lowering effects are also included in the model. The model predications are in close agreement with PISCES simulation results. The equivalence between the present model and previously reported models is proven. The proposed model is suitable for use in circuit simulation tools such as Spice. 相似文献
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Silicon heterojunction solar cell: a new buffer Layer concept with low-temperature epitaxial silicon
Centurioni E. Iencinella D. Rizzoli R. Zignani F. 《Electron Devices, IEEE Transactions on》2004,51(11):1818-1824
Amorphous silicon/crystalline silicon heterojunction solar cells, deposited by the plasma-enhanced chemical vapor deposition (PECVD) technique, have been fabricated using different technologies to passivate defects at the heterointerface: without treatment, the insertion of a thin intrinsic amorphous layer or that of a thin intrinsic epitaxial layer. The open circuit voltage of heterojunction solar cells fabricated including an intrinsic amorphous buffer layer is strangely lower than in devices with no buffer layer. The structure of the amorphous buffer layer is investigated by high resolution transmission electron microscope observations. As an alternative to amorphous silicon, the insertion of a fully epitaxial silicon layer, deposited at low temperature with conventional PECVD technique in a hydrogen-silane gas mixture, was tested. Using the amorphous silicon/crystalline silicon (p a-Si/i epi-Si/n c-Si) heterojunction structure in solar cells, a 13.5% efficiency and a 605-mV open circuit voltage were achieved on flat Czochralski silicon substrates. These results demonstrate that epitaxial silicon can be successfully used to passivate interface defects, allowing for an open circuit voltage gain of more than 50 mV compared to cells with no buffer layer. In this paper, the actual structure of the amorphous silicon buffer layer used in heterojunction solar cells is discussed. We make the hypothesis that this buffer layer, commonly considered amorphous, is actually epitaxial. 相似文献
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《Proceedings of the IEEE. Institute of Electrical and Electronics Engineers》1969,57(9):1587-1594
Two wear-out type failure modes involving aluminum metallization for semiconductor devices are described. Both modes involve mass transport by momentum exchange between conducting electrons and metal ions. The first failure mode is the formation of an electrically open circuit due to the condensation of vacancies in the aluminum to form voids. The second is the formation of etch pits into silicon by the dissolution of silicon into aluminum, and the transport of the solute ions down the aluminum conductor away from the silicon-aluminum interface by electron wind forces. The process continues until an etch pit grows into the silicon to a depth sufficient to short out an underlying junction. 相似文献
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点阵LCD控制器MSM6222B-xx及其应用 总被引:1,自引:0,他引:1
MSM6222B_xx是用低功耗CMOS硅栅工艺制造的点阵LCD控制器。它与4位/8位微控制器相结合可控制点阵字符型LCD上的字符显示。这个LSI内含16点COMMON(公共端 )驱动器、40点SEGMENT(段 )驱动器、显示数据RAM、字符产生器RAM、字符产生器ROM以及控制电路。文中介绍了MSM6222B -xx的原理、引脚排列和功能 ,给出了它与单片机的连接电路 相似文献
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Janez Kr
Franc Smole Marko Topi
《Progress in Photovoltaics: Research and Applications》2003,11(1):15-26
A one‐dimensional semi‐coherent optical model for thin‐film solar cells is presented. The optical circumstances at flat interfaces are addressed and the situation at rough interfaces in the model is described for the case of direct (coherent) incident and scattered (incoherent) incident light. After the model has been experimentally verified, analysis of the light scattering process in hydrogenated amorphous silicon (a‐Si:H) p–i–n solar cells is carried out. The influence of the interface root‐mean‐square roughness and the effect of different angular distribution functions of diffused light on quantum efficiency and short‐circuit current are investigated by the optical model. Copyright © 2002 John Wiley & Sons, Ltd. 相似文献