Low-energy ion scattering and sputtering at grazing ion bombardment of clean and oxygen covered Ag(1 1 0) surface

The ion scattering and sputtering processes at low energy grazing N⁺ and Ne⁺ ion bombardment of clean and oxygen covered Ag(1 1 0) surface have been investigated by computer simulation in the binary collision approximation.

The spatial, angular and energy distributions of scattered, sputtered particles and desorbed molecules of oxygen as well as their yields versus the angle of incidence have been calculated. In these distributions the some characteristic peaks were observed and analysed. It was found that an adsorption layer plays a role of the additional surface barrier, i.e. it reflects leaving target atoms back to crystal. The azimuth angular dependencies of Ag sputtering yield and non-dissociative O₂ desorption yield at grazing incidence have been calculated. It was shown that these dependencies correlate the crystal orientation.     

High-current sputtering ion source for refractory metals

The Chavet-Bernas ion source of the MEIRA isotope separator has been modified to a gas sputtering source for the production of intense refractory metal ion beams. The source has produced a molybdenum ion current of 8 mA; the ratio of this current to the total current, including the argon carrier, is 0.46. A metal ion density of 5.8 mA/cm² has been achieved at the source from an emitting area of 55×2.5 mm². This ion density is significantly higher than the figures which have been reported for such sources.     

A comparison of secondary ion mass spectra from keV and MeV ion bombarded vanadium,niobium and copper

Positive secondary ion mass spectra have been measured from stainless steel, copper, niobium, and vanadium targets bombarded by 70 MeV ⁷⁹Br⁷⁺ and 100 keV ⁴⁰Ar⁺ ions using a modified quadrupole residual gas analyzer. Additional spectra have also been measured from the vanadium target for a number of ⁷⁹Br and ⁴⁰Ar projectile energies from 25 keV up to 5 MeV. As has been previously reported [13], under MeV ion bombardment there is an enhancement in the yield of positive ions of electronegative trace constituents relative to the yield of singly charged metal substrate ions. These data suggest that projectiles capable of large inelastic energy deposition may induce secondary ion emission by a mechanism whose contribution to the total ion yield is insignificant or absent when the projectile energy is limited to a few keV. The similarity of these data to recent results in electron- and photon-stimulated desorption is noted.     

Oxygen ion source with plasma cathode

An ion source with a plasma cathode has been developed for long lifetime use in ion implanters. In this ion source, a plasma cathode replaces the conventional metallic filament used in a Freeman-type ion source. This ion source consists of two compartments, namely a plasma generator and an ion source chambers interconnected by a tapered narrow duct. The pressure difference between the two parts, maintained by differential pumping, prevents the feed gas from flowing into the plasma generator. With any combination of an argon plasma cathode and a feed gas of either fluoride (AsF₅, PF₅) or oxygen, the lifetime was found to be more than 90 h with an extraction voltage of 40 kV and a correspoding ion current density of 20 mA/cm², and a considerable amount of As⁺, P⁺, O⁺, and O₂⁺ ions were observed in mass spectra.     

Investigation of the ion acoustic effect during focused ion beam irradiation

Acoustic waves induced by an intensity modulated focused ion beam (FIB) have been measured. The experiments were performed with Ga⁺ ions of 35 keV at a current of 3 nA and variable chopping frequency up to 10 MHz. The acoustic signals were detected by means of a piezoelectric sensor with integrated pre-amplifier. A dependence on the sample material was found during line scan FIB motion. The results show that the ion-acoustic effect may be utilized for an alternative sample imaging and material analysis in FIB systems.     

Material dependence of total electron emission yields following slow highly charged ion impact

The total electron emission yields following the interaction of “Slow (2 keV/a.u.) Highly Charged Ions” (SHCI) (O³⁺⁷⁺, Xe¹²⁺⁵²⁺, Au⁵⁴⁺⁶⁹⁺) with different target surfaces (highly-oriented pyrolytic graphite (HOPG), Au and SiO2) have been measured. The emission yields increase with charge state, and is found to be highest for carbon, the HOPG target, and lowest for the SiO₂ target. An empirical formula for the electron emission is including recent results from investigations of plasmon excitation following SHCI impact are used to interpret the results.     

Synthesis of carbon-nitride films using a fast-switched dual-source low energy ion beam deposition system

Thin C_xN_y films were deposited in UHV using alternating low energy ion beams of C⁺ and N⁺ or N₂⁺ in the energy range of 5 to 100 eV. The ion beam deposition system is equipped with two Freeman ion sources, mass analysis and fast automated beam switching, allowing perpendicular bombardment of the target with a single ion beam at a time. The composition and density of the films were studied by ARS (in situ), XPS and RBS. The dependence of the film properties and growth mechanisms on ion energy, beam switching rate, and C-to-N arrival ratio have been investigated. The influence of the deposition parameters on the film stoichiometry is discussed. Exposure of the film to atmosphere leads to oxygen incorporation, resulting in a lowered surface concentration of nitrogen. The XPS N 1s and C Is binding energies vary in a relatively broad range indicating that several bond states may be present. The influence of the substrate material on film growth has also been studied. On Si{100}, film growth commences with the formation of an interfacial silicon nitride. No film growth was observed on gold, however deposition was possible on tantalum and molybdenum.     

CS-30回旋加速器制备111In

在四川大学CS-30回旋加速器上通过核反应^NatCd（p,xn）¹¹¹In进行了制备放射性核素¹¹¹In的研究。实验选用高纯度的天然镉作为靶材料,并采用电沉积法制备靶件,研究了辐照靶件的溶解以及放射化学分离方法。结果表明,采用26 MeV的质子轰击天然靶件,并采用CL-P204树脂将In与Cu²⁺、Cd²⁺、Zn²⁺等杂质进行分离,可以得到产额（EOB 48 h,即轰击结束48 h后）约为25~28 MBq/（μA•h）的¹¹¹In,其放射性核素纯度大于99%,Cu²⁺和Cd²⁺等化学杂质总质量浓度小于8.0 mg/L。     

Effect of Auger neutralization on yields of He ions backscattered and alkali ions sputtered from the surface of alkali halides by keV He ion impact

The yields of ions and neutrals backscattered and alkali ions sputtered from LiF crystals by keV He⁺ ion impact have been measured by means of the coaxial impact collision ion scattering spectroscopy in time of flight analysis mode using the charging-up effect. It is found that as the charging-up potential increases due to continuous irradiation of the pulsed ion beam, the time of flight of the He⁺ ions backscattered shifts toward the shorter time, while that of the neutrals backscattered shifts toward the longer, and that of Li ions sputtered also shifts much more clearly toward the shorter. The charging-up potential has been estimated as a function of irradiation time of the pulsed ion beam from the time of flight data and the ion to neutral ratio in the backscattering yields is estimated to be about 0.15. The mechanisms for ionization on He and sputtering of alkali ions are discussed in terms of charging-up and trion (bihole and electron) produced by Auger neutralization of keV He⁺ ions at the target surface.     

Effect of electric charge accumulation on low energy ion implantation in insulators

Charge accumulation at the surface of insulators during low energy ion implantation is related to two processes: ion impinging on the sample and secondary electron emission. Samples composed of a piece of Si (having the size of the ion beam) fixed on the centre of polyethylene (PE) coupons have been implanted with 2.2 keV H₂ ions to a fluence of 2 × 10¹⁶ H/cm². ERD (Elastic Recoil Detection) depth profiles of the implanted ions are shallower with an increase of the PE coupon size. The relative critical Si/PE size to repel all the incident ions is around 1.1 × 1.1 cm²/2.5 × 2.5 cm². The potential of the secondary electron suppressor has been varied from −500 V to +500 V. It changes the secondary electron distribution around the implanted area and, consequently, affects the accumulation of charges at the sample surface. When the potential is 0 V, a uniform ion implantation with little effect of charge accumulation for all sizes of PE coupons is obtained. A two-dimension model has been performed and gives a good explanation for the mechanism of the electric charge neutralisation.     

Secondary electron emission from the entrance and exit surfaces of thin carbon foils under fast ion bombardment

The total secondary electron emission (SEE) yield from the entrance and exit surfaces of thin carbon foils under fast ion (¹⁶O, ¹⁹F, ³⁵Cl) bombardment has been measured as a function of the ion energy and the ion beam current intensity. Using a retarding field, the energy distribution of secondary electrons integrated over almost all angles of emission in the backward and forward directions has also been measured. It is found that total forward emission is larger than backward emission by factors of up to 2.5, 2.7 and 3.4 for ¹⁶O⁺³, ¹⁹F⁺³ and ³⁵Cl⁺⁵, respectively. It is suggested that the enhancement of forward SEE may be partly due to effects from the instantaneous charge state of the heavy ion beam in the solid in addition to the binary collisions of the projectile with individual electrons in the target. It is also shown that the total SEE yield from the entrance and exit surfaces of the target foils decreases with ion beam current intensity; this may be a beam-induced temperature effect. The total SEE yield in both the forward and backward directions is less sensitive to surface conditions for high velocity ions than for low velocity ions and the total yield from both surfaces of the foils is proportional to the ion stopping power in the target, where the constant of proportionality depends on the properties of material.     

MeV离子轰击碳样品引起的碳氢团簇产额

利用北京大学2×1.7MV静电串列加速器产生的1.5MeV Au2+和Si+束流轰击碳纳米管样品,用二次离子飞行时间质谱方法分析了二次离子成分,通过质量已知的样品的定标,确认了轰击产生的二次离子质量。分析束流轰击后的二次离子产额,发现在此能量下二次离子产额与离子在物质中射程的横向歧离表现出正相关。     

Secondary ion emission from beryllium surfaces by Ar and /or (Ar+D2) mixed ion bombardments

With respect to the impurity emission and erosion of a Be first wall, a secondary ion mass spectrometric investigation was carried out along with surface characterization with X-ray photoelectron spectroscopy. It was found that Be is emitted as distinct types of chemical forms from the surface owing to sputtering with Ar⁺ and an (Ar⁺+ D⁺₂) mixture: (i) Be and Be-cluster, (ii) oxide and hydroxide, and (iii) hydride and/or deuteride.     

Argon irradiation damage at a Cu/Al2O3 interface for different alumina structures

The evolution of damages at a Cu/Al₂O₃ device interface after Ar⁺ irradiation, depending on alumina structure, and the effect of surface roughness on sputtering have been studied. A polycrystalline Cu/Al₂O₃ bilayer and polycrystalline Cu on amorphous alumina were irradiated with 400 keV Ar⁺ ion beam at doses ranging from 5 × 10¹⁶ to 10¹⁷ Ar⁺/cm² at room temperature. The copper layer thicknesses were between 100 and 200 nm. RBS analysis was used to characterize the interface modification and to deduce the sputtering yield of copper. The SEM technique was used to control the surface topography. A RBS computer simulation program was used to reproduce experimental spectra and to follow the concentration profile evolutions of different elements before and after ion irradiation. A modified TRIM calculation program which takes into account the sputtering yield evolution as well as the concentration variation versus dose gives a satisfactory reproduction of the experimental argon distribution. The surface roughness effect on sputtering and the alumina structure influence at the interface on mixing mechanisms are discussed.     

Effect of radio-frequency substrate bias on ion properties and sputtering behavior of 2 MHz magnetron sputtering

The effect of radio-frequency substrate bias on ion properties and sputtering behavior of 2 MHz magnetron discharge was investigated. The ion velocity distribution function(IVDF), the maximum ion energy and ion flux density were measured at the substrate by a retarding field energy analyzer. The sputtering behavior was investigated by the electric characteristics of target and bias discharges using voltage–current probe technique. It was found that the substrate bias led to the decrease of sputtering power, voltage and current with the amplitude 7.5%. The substrate bias also led to the broadening of IVDFs and the increase of ion flux density, made the energy divergent of ions impacting the substrate. This effect was further enhanced by increasing bias power and reducing discharge pressure.     

The density effects in sputtering of amorphous materials

The effects of the target atomic density on sputtering of amorphous targets under 1 keV Ar ion bombardment have been investigated using binary-collision simulation. Attention was given to the sputtering yield, and the angular and energy distributions of sputtered atoms. A large set of targets, from ³Li to ⁹²U was considered and three interatomic potentials were applied. It has been shown that both the sputtering yield and the angular and energy distributions of sputtered atoms are undoubtedly dependent on the target atomic density. Results are compared with the data from the literature.     

Effects of ion irradiation on cobalt nanocomposite

The effects of ion irradiation of 3-dimensional arrays of Co nanoparticles were investigated. Arrays were obtained by electron beam deposition of 15 Co/SiO₂ bilayers 0.5 and 20 nm thick, respectively. The Co layers consist of Co nanoparticles 3.2 nm in diameter with a standard deviation of 16%. Irradiation was carried out using combinations of 150 kV Ar²⁺ and 90 kV Ar⁺ ion bombardments with a Ar⁺:Ar²⁺ fluence ratio of 1:4. The effects of ion irradiation were followed by Rutherford backscattering, measurements of hysteresis loops at 5 K and of temperature-dependent field-cooled (FC) and zero-field-cooled (ZFC) measurements of the magnetic susceptibility. A decrease of the peak temperature in the ZFC curve for displacements per atom (DPA) up to 1.1 was observed. Irradiation also induces progressively lower coercivity values. The Co particles showed a remarkable high resistance to ion irradiation, surviving damage up to 33 DPA.     

Total sputtering yields of solids under MeV-energy Si ion bombardment

Total sputtering yields have been measured for SiO₂ and Cu targets bombarded with Si ions at an incident energy between 500 keV and 5.0 MeV using a quartz crystal microbalance technique. In order to measure total yields accurately, we have developed a beam modulation technique to avoid the effect of thermal drift. In the MeV energy range, an ion penetrates through thin SiO₂ and Cu targets and is implanted into a quartz crystal. Therefore, the thickness of these layers deposited on quartz crystals was carefully controlled to avoid damage of quartz crystal by incident ions. As a result, total sputtering yields of SiO₂ increased with incident Si ion energy, while those of the Cu target decreased. The total yields of the SiO₂ target were represented well by a power low of the electronic stopping power.     

Resonant ion stimulated desorption of O from the TiO2(1 1 0) surface: Effects of oxygenation and ion bombardment

The O⁺ desorption from reduced, oxygenated, and ion-bombarded TiO₂(1 1 0) surfaces has been investigated during He⁺ irradiation. The O⁺ desorption is initiated by creation of an antibonding O 2s core hole state via quasi-resonant charge exchange with the He⁺ 1s state, followed by the intra-atomic Auger decay of the O 2s hole. Upon oxygenation of the reduced TiO₂(1 1 0) surface, the O⁺ yield increases by one order of magnitude. The O₂ molecule is dissociated at the vacancy site of bridging oxygen and the oxygen atoms either fill a vacancy site or chemisorb at a fivefold-coordinated Ti⁴⁺ site as an adatom. The latter is detected with much higher efficiency than the former. The O⁺ yield is increased during He⁺ bombardment of the reduced TiO₂(1 1 0) surface due to formation of lower coordinated oxygen atoms. The oxygen species thus formed by ion bombardment or oxygenation are unstable on the surface and tend to diffuse into bulk vacancy sites or higher coordination surface sites even at room temperature.     

Low energy nitrogen ion doping into GaAs using combined ion-beam and molecular-beam epitaxy method

Low energy nitrogen (N) ions were irradiated during the epitaxial growth of GaAs using combined ion beam and molecular beam epitaxy (CIBMBE) method as a function of N⁺ ion acceleration energy (E_a) and N⁺ ion beam current density (I_N). E_a was varied from 70 to 170 eV I_N from 900 pA/cm² to 75 nA/cm². GaAs growth rate was fixed to 1 μm/h. In 2 K photoluminescence (PL) spectra of the samples with I_N = 3 nA/cm² and E_a = 70–100 eV, two sharp emissions at 1.508 eV (X₁) and 1.495 eV (X₂), which have been attributed to the emissions of excitons bound to isolated N atoms, and another one at 1.443 eV (X₅) were observed. These results show that nitrogen (N) atom in GaAs becomes optically active as an isoelectronic impurity at least in as-grown condition. For N⁺ ion-irradiated samples with rather high I_N, e.g., with I_N = 75 nA/cm² and E_a = 100 eV, a broad emission together with multiple sharp ones were observed after furnace annealing at 750°C which were ascribed to emissions of excitons bound to nitrogen-nitrogen (N---N) pairs.