Characteristics of GaAs solar cells on Ge substrate with a preliminary grown thin layer of AlGaAs

Characteristics of GaAs solar cell on Ge substrate with a new buffer layer structure is reported. The buffer layer structure, which consisted of a preliminarily grown thin layer of A1_xGa_1−xAs and a 1 μm thick GaAs layer, was designed to obtain a high quality GaAs layer on Ge substrate by metalorganic chemical vapor deposition (MOCVD). Performance of a GaAs solar cell fabricated on Ge substrate with the buffer layer structure was compared with that fabricated on Ge substrate with a conventional GaAs buffer layer and also that fabricated on GaAs substrate. A conversion efficiency of 23.18% (AM1.5G) was successfully obtained for the cell fabricated on Ge substrate with the new buffer layer structure, while it was 20.92% for the cell fabricated on Ge substrate with the conventional GaAs buffer layer. Values of V_oc and J_sc, for the cell fabricated on Ge substrate with the new buffer layer structure were approximately comparable to those of a 25.39% efficiency GaAs solar cell fabricated on GaAs substrate.     

Optimizing Gallium Arsenide multiple quantum wells as high-performance photovoltaic devices

We examine the possibility of using gallium arsenide (GaAs) quantum wells, which have significantly high absorption coefficient for photon energies near the energy band gap, as high-performance solar cells. Using a semi-empirical model of the absorption spectrum, we determine the critical well widths at which the efficiencies of solar cells based on the GaAs/Al_xGa_1−xAs quantum well structure can be optimized.     

Analysis of impurity diffusion from tunnel diodes and optimization for operation in tandem cells

The tunnel diode has been applied as an interconnector in monolithic devices such as tandem solar cells. However, thermal degradation due to impurity diffusion is often observed due to growth at above about 600°C. In this study, the impurity diffusion from highly doped tunnel junctions after annealing has been analyzed, and it has been suggested that carbon has the advantage of a low diffusion coefficient as the p-type impurities. Furthermore, the thermally stable double hetero (DH) structure GaAs tunnel diodes which have been proposed in our previous work have been optimized. The thermal degradation is greatly suppressed by using a DH-structure which consists of a GaAs tunnel diode sandwiched between Al_xGa_1−xAs layers, and as a result, a higher tunnel peak current density can be achieved by optimizing the impurity concentration and DH composition.     

Characterization of Cu(InxGa1−x)2Se3.5 thin films prepared by rf sputtering

Cu(In_xGa_1−x)₂Se_3.5 thin films were fabricated by rf sputtering from CuIn_xGa_1−xSe₂ and Na mixture target by controlling the mixture ratio. X-ray diffraction analyses show that the structure of Cu(In_xGa_1−x)₂Se_3.5, thin films is different from chalcopyrite structure: especially, CuIn₂Se_3.5 thin films have a defect chalcopyrite structure. The lattice parameters for Cu(In_xGa_1−x)₂Se_3.5 thin film are slightly smaller than those for CuIn_xGa_1−xSe₂ thin film and linearly decreased with increasing Ga content. The optical absorption coefficients for Cu(In_xGa_1−x)₂Se_3.5, thin films exceed 2 × 10⁴ cm⁻¹ in energy region above the fundamental band edge. The band gap for Cu(In_xGa_1−x)₂Se_3.5 thin films is larger than that for CuIn.Ga_1−x2Se₂ with the same Ga content and increased with increasing Ga content.     

Large area CIGS2 thin film solar cells on foils: nucleus of a pilot plant

In earlier research, conversion efficiency of 10.4% (AM1.5) and 9.9% (AM0) has been achieved on small area CuIn_xGa_1−xS₂ (CIGS2) solar cell on 127 μm thick stainless steel substrate. The area of research is mainly focused on studying CIGS2 thin films as solar cell absorber material and growing high efficiency cells on ultralightweight and flexible metallic foils such as 127 μm thick stainless steel and SiO₂ coated 25 μm thick Ti foils. This paper presents the scaling up process of CIGS2 thin film substrate from 2.5 × 2.5 cm² to 10 × 10 cm². Initial scaling up efforts focused on achieving uniform thickness and stress-free films. Process of scaling up consisted of refurbishment of selenization/sulfurization furnace, design and fabrication of scrubber and enlargement of new CdS deposition setup. The scaling up from 2.5 × 2.5 cm² to 10 × 10 cm² substrate size has laid the foundation for PV Materials Lab of Florida Solar Energy Center becoming the nucleus of a pilot plant.     

Electrochemical supercapacitor behavior of nanoparticulate rutile-type Ru1−xVxO2

Rutile-type Ru_1−xV_xO₂ nanoparticles possessing high surface area were prepared by a polymerizable-complex method and its electrochemical supercapacitor behavior was studied. X-ray diffractometry, energy-dispersive X-ray analysis, and N₂ adsorption/desorption measurements were used to characterize the structure of the products. The electrochemical supercapacitor behavior of thick and thin films was studied by cyclic voltammetry in various acidic, neutral, and alkaline electrolytes. Ru_1−xV_xO₂ exhibited extremely enhanced supercapacitive properties compared to pure RuO₂. The highest surface redox activity was achieved with an acidic electrolyte. Ru_1−xV_xO₂ showed negligible surface redox activity in neutral electrolytes.     

THM growth and characterization of CuGaxIn1−xSe2 solid solutions

Growth of CuGa_xIn_1−xSe₂ single crystals by THM (traveling heater method) has been investigated. On the basis of the relation between the composition x of grown crystal CuGa_xIn_1−xSe₂ and y of CuGa_yIn_1−ySe₂ solute in 60 mol% In solution, THM growth of CuGa_xIn_1−xSe₂ (x = 0, 0.2, 0.4, 0.7, 1) was performed using a zone ingot which was prepared in advance. Bulk single crystals with 10 mm in diameter and 20–30 mm in length have been obtained by the THM growth, and their electrical and optical properties have been studied.     

Preparation and properties of LiCoyMnxNi1−x−yO2 as a cathode for lithium ion batteries

The preparation of LiCo_yMn_xNi_1−x−yO₂ from LiOH·H₂O, Ni(OH)₂ and γ-MnOOH in air was studied in detail. Single-phase LiCo_yMn_xNi_1−x−yO₂ (0y0.3 and x=0.2) is obtained by heating at 830–900°C. The optimum heating temperatures are 850°C for y=0–0.1 and 900°C for y=0.2–0.3. Excess lithium (1z1.11 for y=0.2) and the Co doping level (0.05y0.2) do not significantly affect the discharge capacity of Li_zCo_yMn_0.2Ni_0.8−yO₂. The doping of Co into LiMn_0.2Ni_0.8O₂ accelerates the oxidation of the transition metal ion, and suppresses partial cation mixing. Since the valence of the manganese ion in LiMn_0.2Ni_0.8O₂ is determined to be 4, the formation of a solid solution between LiCo_yNi_1−yO₂ and Li₂MnO₃ is confirmed.     

Elastic properties of Sr- and Mg-doped lanthanum gallate at elevated temperature

The elastic moduli, i.e., Young’s modulus, shear modulus and Poisson’s ratio, of a sintered La_0.9Sr_0.1Ga_0.8Mg_0.2O_3−δ bulk have been experimentally determined in the temperature range from room temperature to 1373 K using a resonance technique. Anomalous elastic properties were observed over a wide temperature range from 473 to 1173 K. In the results for internal friction and in X-ray diffraction measurements at elevated temperature, two varieties of structural changes were seen in La_0.9Sr_0.1Ga_0.8Mg_0.2O_3−δ in the examined temperature range. The results agreed with the findings of a previous crystallographic study of the same composition system by Slater et al. In addition, the temperature range in which a successive structural change occurred in La_0.9Sr_0.1Ga_0.8Mg_0.2O_3−δ was the same as that exhibiting the anomalous elastic properties. Taking all the results together, it can be inferred that the successive structural change in the significant temperature range is responsible for the elastic property anomaly of La_0.9Sr_0.1Ga_0.8Mg_0.2O_3−δ.     

Effect of Co content on performance of LiAl1/3−xCoxNi1/3Mn1/3O2 compounds for lithium-ion batteries

Layered LiAl_1/3−xCo_xNi_1/3Mn_1/3O₂ (0  x  1/3) compounds were studied via the combination of computational and experimental approach. The calculated voltage curve of LiNi_1/3Al_1/3Mn_1/3O₂ compound is presented, indicating it is of great potential for a cathode material of lithium-ion batteries. Unfortunately, it was found that the LiNi_1/3Al_1/3Mn_1/3O₂ compound without impurity phase could not be synthesized via a sol–gel process. To obtain a layered compound without impurity phase, partial of Al is replaced by Co in LiNi_1/3Al_1/3Mn_1/3O₂ compound in this study. Layered LiAl_1/3−xCo_xNi_1/3Mn_1/3O₂ (0  x  1/3) compounds were synthesized via sol–gel reaction at 900 °C under a oxygen stream. Single phase of the LiAl_1/3−xCo_xNi_1/3Mn_1/3O₂ in 1/6  x  1/3 region could be prepared successfully. The discharge capacity and conductivity increased with an increase in the Co-substitution content. The enhancement of the conductivity and phase purity by the introduction of Co content shows profound influence on the performance of the LiAl_1/3−xCo_xNi_1/3Mn_1/3O₂ compounds.     

Stability of some ternary and quaternary CeNi5-based and PrNi5-based hydride systems

The Ce_1−xR_xNi_2.5Cu_2.5 (R = La,Pr; 0.8 x 0.3) and PrNi_5−xM_x (M = Cu, Fe; 0.5 x 2.5) alloys were investigated for their hydriding characteristics in the temperature range 0–70°C and hydrogen pressure range 0.01–50 atm. The nonlinear behaviour of unit cell volume vs x in Ce_1–xLa_xNi_2.5Cu_2.5 suggests that both size and electronic effects are involved. The partial replacement of Ce by La and Ni by Cu in CeNi₅ causes a substantial reduction in the hydrogen sorption pressures without significantly impairing its hydrogen capacity. It was observed that Fe is more effective than Cu in stabilizing PrNi₅-H₂. The high values of the molar entropy of hydrogen of the β-hydrides studied, S^β_H, are attributed to extensive hydrogen disorder in the interstitial sites of the host lattice. A linear correlation between the hydride decomposition pressures (or free energy) and the unit cell volume. V_c, of the host alloys was observed. This behavior is helpful in predicting the stabilities of new hydrides in a given substitutional alloy series.     

On the computer simulation of the P–C isotherms of ZrFe2 type hydrogen storage materials

This paper deals with computer simulation of the P–C isotherms of some ZrFe₂ type (Zr(Fe_1−xCr_x)₂, Zr_1−xTi_xFe_1.4Cr_0.6, Zr_1−2xMm_xTi_xFe_1.4Cr_0.6 : x00.4) of hydrogen storage materials. A feasible mathematical model has been developed to simulate the P–C isotherms. The randomized variables in the model applied for simulating the P–C isotherms of the above-mentioned ZrFe₂ type hydrogen storage materials correspond to change in enthalpy (ΔH) and entropy (ΔS) of hydride formation. Several ZrFe₂ type materials as in above have been synthesized and their P–C isotherms, enthalpy and entropy change has been evaluated experimentally in order to have input data for simulation. A special software was developed to simulate the P–C isotherms using the said model. A close match between the experimentally observed and simulated P–C isotherms for the above said ZrFe₂ type alloys has been obtained.     

A new way of obtaining LixNi1−xO cathodes for molten-carbonate fuel cells

An unsintered nickel plaque containing Li₂CO₃ and an organic binder were tested as a cathode in a molten-carbonate fuel cell. Organic burnout, nickel oxidation,lithium carbonate decomposition and Li_xNi_1−xO solid-solution formation occurred during the start-up of the cell. The in-cell test showed good performance after a short time of operation, and a limited performance decay after 3500 h.     

Crystal growth of CuGaxIn1−xSe2 by horizontal bridgman method

Single crystals of CuGa_xIn_1−xSe₂ were grown from stoichiometric melt by horizontal Bridgman method. An non-contact carbon coating method was used to avoid sticking between quartz ampoule and the melt. The composition variations along the as-grown ingots were studied as a function of Ga content. X-ray powder diffraction measurements were carried out to determine the lattice constants.     

Processing options for CdTe thin film solar cells

Processing options for addressing critical issues associated with the fabrication of thin film CdTe solar cells are presented, including window and buffer layer processing, post-deposition treatment, and formation of stable low resistance contacts. The paper contains fundamental data, engineering relationships and device results. Chemical surface deposited CdS and Cd_1−xZn_xS films are employed as the n-type heteropartner window layers. Maintaining junction quality with ultra-thin window layers is facilitated by use of a high resistance oxide buffer layer, such as SnO₂, In₂O₃ or Ga₂O₃, between the heteropartner and the transparent conductive oxide. Thermal annealing of the CdTe/CdS heterostructure in the presence of CdCl₂ and O₂ shifts the chemical equilibrium on the surface of the absorber layer, which influences the bulk electrical properties. Aspects of back contacting CdTe/CdS devices, including etching, Cu application, contact annealing, back contact chemistry and secondary contacts, are discussed. Two commonly employed etches used to produce a Te-rich layer, nitric acid/phosphoric acid mixtures and Br₂/methanol are compared, including the nature and stability of the final treated CdTe surface. The diagnostic abilities of the surface sensitive VASE and GIXRD techniques are highlighted. Various methods of Cu delivery are discussed with consideration to; reaction with Te, processing simplicity, processing time and possible industrial scale-up. Some aspects of back contact stability are presented, including discussion of apparent robust back contacts, which contain a thick Te component.     

Phase transitions and phase decomposition of La1−xSrxCoO3−δ in low oxygen partial pressures

High-temperature X-ray diffraction has been used to investigate the phase stability of lanthanum strontium cobalt oxide (LSC) for a range of materials with the formula La_1−xSr_xCoO_3−δ (x = 0.7, 0.4, and 0.2). The stability of LSC increases with La content in low oxygen partial pressures at high temperature. Oxygen vacancy ordering has been observed for all three compositions in either low oxygen pressure or under reducing gas, as evidenced by the formation of the brownmillerite phase. The crystal structure of the vacancy-ordered phase was determined using Rietveld analysis of synchrotron X-ray diffraction data. The decomposition products under low oxygen pressure and in reducing conditions have been identified and characterized, including the phase transition and thermal expansion of the primary decomposition products, LaSrCoO₄ and LaSrCoO_3.5.     

IrxCo1−x (x = 0.3–1.0) alloy electrocatalysts, catalytic activities, and methanol tolerance in oxygen reduction reaction

Novel methanol-tolerant catalysts for oxygen reduction reaction (ORR), Ir_xCo_1−x/C (x = 0.3–1.0), were synthesized by a conventional impregnation method. These carbon-supported catalysts showed particle sizes of 2.7–5.0 nm. The catalyst activity and the catalyzed ORR kinetics were characterized by cyclic voltammetry and rotating disk electrode methods. Among these Ir_xCo_1−x/C catalysts, the alloy with a formula of Ir_xCo_1−x/C with x value in the range of 0.7–0.8 exhibited the highest mass and specific activities. Compared to a Pt/C catalyst, these alloy catalysts have much stronger methanol tolerance in terms of ORR onset potential (or open-circuit potential). Based on the rotating disk electrode measurements, it was confirmed that these Ir_xCo_1−x/C alloy catalysts could catalyze a complete four-electron transfer reaction of oxygen to water. These results strongly suggest that the novel Ir–Co metal alloy catalysts synthesized in this work could be promising for DMFC cathodes.     

Cycle characterizations of LiMxMn2−xO4 (M=Co, Ni) materials for lithium secondary battery at wide voltage region

LiM_xMn_2−xO₄ (M=Co, Ni) materials have been synthesized by a melt-impregnation method using γ-MnOOH as the manganese source. Highly crystallized LiM_xMn_2−xO₄ compounds were synthesized at a calcination temperature of 800°C for 24 h in air. All compounds show a single phase except for LiNi_0.5Mn_1.5O₄ based on the X-ray diffraction (XRD) diagram. With the increase of the doping content from 0.1 to 0.5, the capacity of doping materials decreases mainly in the 4 V region.

Although LiM_0.5Mn_1.5O₄ (M=Co, Ni) compound shows a small capacity in the (3+4) V region compared with parent LiMn₂O₄, it is a very effective material in reducing capacity loss in the 3 V region that is caused by the Jahn–Teller distortion. The doping of Co and Ni ions in the LiMn₂O₄ cathode material promotes the stability of this structure and provides an excellent cyclability.     

Preparation of Culn(SxSe1−x)2 thin films by sulfurization and selenization

A CuIn(S_xSe_1−x)₂ alloy thin-film was prepared by selenization of CuInS₂: its composition ratio x can be controlled by the number of selenization cycles implemented. Crystallinity of the films was improved by annealing in vacuum. The resistivity of the film was about 1 Ω cm and increased by one to two orders of magnitude after KCN treatment. An 8.1 % efficiency solar cell was obtained by using this annealed alloy thin-film.     

Structural and electrochemical properties of Li1+xNi0.5Mn0.5O2+δ (0 ≤ x ≤ 0.7) cathode materials for lithium-ion batteries

A comparative analysis of the properties of LiNi_0.5Mn_0.5O₂ and Li_1+xNi_0.5Mn_0.5O₂ (0.2 ≤ x ≤ 0.7) powders, obtained by the freeze drying method, was performed. Lattice parameters of Li_1+xNi_0.5Mn_0.5O₂ decreased considerably with growing amounts of Li until x = 0.3; at x > 0.5 trace amounts of Li₂MnO₃ are observed by X-ray diffraction (XRD) patterns. X-ray photoelectron spectroscopy (XPS) analysis displayed an increase of Ni³⁺/Ni²⁺ ratio at 0.3 < x < 0.5, while Mn 2p spectra were almost identical in all samples. Rechargeable capacity values (V = 2.5–4.6 V) increased systematically with x reaching its maximum (185–190 mAh g⁻¹) at x = 0.5. Samples with superstoichiometric lithium content also demonstrated good C rate characteristics.