半导体技术在大功率微波加热应用研究

研究大功率半导体微波技术应用与微波炉加热,通过半导体微波炉控制系统、半导体微波馈入系统研究,实现半导体微波技术在大功率微波炉上应用。试验测试表明：半导体微波加热功率输出能够达到600W,半导体微波炉负载及频率牵引特性满足要求,加热均匀性在70％以上。加热效率在40％左右,还需进一步提升。     

8GHz功率场效应放大器

本文叙述了用于微波中继通讯的功率GaAs FET放大器.介绍了设计方法和研制结果,8GHz下获得输出功率600mW、增益大于34dB、线性度良好的结果,并已经用于微波中继通讯无人站中.     

GaAs HBT's for microwave integrated circuits

The status of the microwave GaAs heterojunction bipolar transistor (HBT) technology is reviewed. Microwave circuits for advanced military and commercial systems continue to increase their dependence on the performance, functionality, and cost of active components fabricated using solid-state technology. The performance advantages provided by GaAs HBT's, for several critical circuit applications, have stimulated a worldwide development activity. Progress in HBT device technology and microwave circuit applications has been extremely rapid because of the broad availability of III-V compound semiconductor epitaxial materials and prior experience with GaAs field-effect transistors (FET's) and monolithic microwave integrated circuits (MMIC's). The great flexibility of HBT's in microwave circuits makes them prime candidates for applications in complex multifunctional microwave/digital IC's in next-generation systems     

Remote Control of Standby Engine Generator Sets Over a Microwave System

Experience in actual operation of microwave relay systems throughout the country has shown that involuntary outages have been caused principally by failure of the input power to the microwave equipment. Where substantially continuous service is required of the microwave system the common practice is to have emergency standby power available. This emergency power is supplied by an emergency generator set at the microwave station site. Failure of the normal input power supply initiates starting the engine generator set to supply a particular microwave station with power. This paper describes the units used to improve reliability of engine generators in microwave applications.     

Foreword, May 1979

Solid-state devices have been key to the development of todays microwave systems. RADARs, communications systems, and EW systems currently in use offer advantages in performance, size, reliability, and cost that would certainly not be possible without these devices. Equally certain is the fact that the future course of microwave and millimeter-wave systems will be determined by solid-state devices currently under development.     

Low-Noise Millimeter-Wave Receivers

Over the past several years, significant improvements have been made in solid-state devices (that is, avalanche diodes, Gunn diodes, varactors, mixer diodes, etc.) that have enhanced the overall capability and low-noise performance of millimeter-wave receivers. With these improved devices, it is now possible to configure completely solid-state low-noise millimeter-wave receivers. As is similar in the microwave region, low-noise parametric amplifiers, broad-band low-conversion-loss mixers, and solid-state local oscillators are now available. Furthermore, cryogenically cooled parametric amplifiers and mixers are also being developed that will result in achieving the ultimate in system sensitivity. With the flexibility offered by these completely solid-state millimeter-wave components, it is now possible to design the optimum system configuration for the intended application whether it be an advanced communication system, a sophisticated EW application, a RADAR system, a radiometric system, or satisfying any of the numerous receiver requirements that are being evolved. This paper explores the trends that are being developed in the millimeter-wave region and their application to system design. The performance criterion of various receiver systems and their sensitivity requirements are presented. A review of the system operating noise temperature concept and the method by which it can be determined and its applicability to low-noise components is demonstrated. A review of the state-of-the-art of low-noise systems and experimental data obtained in the millimeter-wave region is also presented.     

Foreword, Nov. 1976

For more than a quarter of a century, engineers and scientists have been challenging the frontier of microwave technology with the prospect of extending it into millimeter-wave systems applications. The progress toward this goal had been relatively slow. In recent years, however, a significantly increased effort has been directed toward the development of various solid-state devices for use at millimeter-wave frequencies. This has brought a rapid progress in the field of millimeter waves in many countries, particularly in Europe, Japan, and North America.     

在片微波参数测量系统计量技术进展

在片微波参数测量系统主要通过探针台建立微波仪器与半导体裸芯片之间的信号连接通道,从而测量半导体裸芯片的微波参数。在片微波参数测量系统对提升芯片的性能,控制质量,保证芯片的一致性和稳定性方面具有重要的意义。国外相关的计量技术与测量系统同步发展,我国由于半导体产业起步较晚,测试系统大多采用进口,相关计量测试技术在过去很长一段时间发展相对缓慢。最近10 年我国奋起直追,不断缩小与世界先进水平的差距,目前已经完成40 GHz 以内的主要在片微波参数测量系统计量能力。文中回顾了本领域的技术发展历程,介绍国内外技术发展特点,对于进一步发展相关计量技术具有指导意义。     

Microwave Variable Delay Devices

Needs for nondispersive microwave variable delay devices exist in RADAR, communication, ECM, and test systems. Methods which have been investigated to satisfy these needs are reviewed in this paper. Techniques that employ solid-state microwave acoustic interactions and that have promise of satisfying some of the microwave variable delay requirements are described in detail, and their present capabilities and potential capabilities are discussed. One technique employing magnetoelastic waves is particularly promising and the state of the art of this technique is analyzed thoroughly.     

固态微波电子学的新进展

固态微波电子学是现代电子学的重要分支之一,其基础材料已由第一代半导体Si和Ge、第二代半导体GaAs和InP,发展到第三代半导体GaN和SiC,石墨烯和金刚石等C基新材料正在进行探索性的研究,其加工工艺的尺寸也已进入纳米尺度,其工作频率已达到1 THz,应用的频率可覆盖微波毫米波到太赫兹.目前固态微波电子学呈多代半导体材料和器件共同发展的格局.综述了具有代表性的1 1类固态器件(RF CMOS,SiGe BiCMOS,RF LDMOS,RF MEMS,GaAs PHEMT,GaAs MHEMT,InP HEMT,InP HBT,GaN/SiC HEMT,GFET和金刚石FET)近几年的最新研究进展,详细介绍了有关固态微波电子学的应用需求、技术特点、设计拓扑、关键技术突破和测试结果,分析了当前固态微波电子学总的发展趋势和11类固态微波器件的发展特点和定位.最后介绍了采用3D异构集成技术的射频微系统的最新进展,指出射频微系统是发展下一代射频系统的关键技术.     

Estimation of the rain attenuation outage time for a multirelay link at millimeter wavelengths

In the design of long haul radio relay links using frequencies above 10 GHz, it is necessary to estimate outage time occurrence probability due to rain attenuation for multirelay systems. A theoretical predictive method is proposed in this paper which is involved with the analysis of joint attenuation exceedance probabilities using a very simple exponentially shaped spatial rainrate profile. This same rain structure model has been originally developed for the prediction of rain attenuation of microwave satellite links. Numerical results have been obtained and compared with experimental data taken from a multirelay system located in Japan.     

Microwave and Millimeter-Wave Communications in Japan

This paper reviews the status of research and development in both microwave radio-relay systems and millimeter-wave transmission systems as well as the technical features in these fields, mainly developed under the auspices of Nippon Telegraph and Telephone Public Corporation (NTT). Recent activities have been the development of new solid-state devices and high-capacity systems. The application of solid-state techniques is being extended to systems of both analog and digital transmission, such as the 2700 multichannel telephone transmission system in frequency division multiplexing (FDM)-FM radio-relay system, an experimental 20-GHz PCM radio-relay system capable of 400 Mbits/s pulse transmission, and a guided millimeter-wave system of 800-Mbit/s transmission at 40-80 GHz. The microwave integrated circuit (MIC) is also becoming very important in utilizing these high-frequency regions, which should be a valuable resource in the future when a vast information transmission capability will be required.     

Transferred electron (Gunn) amplifiers and oscillators for microwave applications

Transferred electron amplifiers and oscillators are now well established as important members of the family of active microwave solid-state devices. The combination of power output, gain-bandwidth product, and noise figure that has been achieved with stable linear transferred electron amplifiers cannot be matched by any other type of microwave solid-state amplifier. Transferred electron oscillators have produced the highest power output obtained so far from a single solid-state device at microwave frequencies, they can be electronically and mechanically tuned over larger frequency ranges than other types of solid-state oscillators, and well designed transferred electron oscillators have exceptionally low AM and FM noise. An introductory survey of the history and the current status of the theory, technology, and application of transferred electron devices is presented. The future outlook for these devices appears bright.     

大容量远距离微波接力链路分析与设计

远距离大容量微波通信链路可靠工作非常困难。针对此问题,在传统微波接力通信传输链路设计方法的基础上,分析了大容量远距离微波链路难点和多种主要抗多径干扰技术的特点,提出微波链路抗多径衰落和微波设备抗多径衰落根据信道特点联合设计才能保证通信系统可靠工作,并给出了一个信息传输速率155.520 Mb/s、传输距离121 km的微波链路设计验证实例,为大容量远距离微波中继系统的工程设计提供了一种借鉴方式。     

A Short History of Microwave Acoustics

Microwave acoustics may be defined as the subject embodying the propagation of acoustic waves in solid-state materials at-micron-order wavelengths where analysis, design, and componentry realizations are similar to those used by the microwave engineer exploiting electromagnetic waves. Microwave acoustics has a short history, being about 25 years old, but is underpinned by the theory of sound propagation due to Lord Rayleigh of 100 years ago. Microwave acoustic components inherently have several distinct physical origins including volume acoustic waves in solids excited by piezoelectric thin-film transducers and magnetic propagating modes in yttrium iron garnet, both at conventional microwave frequencies; the later surface acoustic-wave (SAW) technology for operation at VHF/UHF and the realm of acoustooptics, which can embody any of the earlier three. Over its 25-year history, microwave acoustics has matured to become a necessary building-block in many radar and communication systems for efficiently carrying out real-time analog signal processing. Contributions to microwave acoustics have been truly international and have spanned many diverse disciplines. The growth of this subject has led to the formation of several companies dedicated to its application.     

Satellite antennas

Communication satellites have evolved from a radio relay in space to encompass other applications such as processing and meteorology. The demand for high capacity communication satellites has led in the past two decades to the development of multibeam antennas, a landmark in satellite antenna technology. Satellite antennas are classified into three categories according to function: communication; tracking, telemetry, and command (TT and C); and special satellite antennas. While the application of shaped beam antennas has been developed to its fullest extent as in INTELSAT VI and VII, an active monolithic microwave integrated circuit (MMIC) phased array will play an important role in future satellite antenna technology. Examples of each state-of-the-art satellite antenna technology and the process of space qualification are presented briefly     

压电陶瓷耦合固体继电器的研制及其电学性能

针对传统固体继电器存在的接通时间长、抗干扰能力差、触发灵敏度等问题,采用PZT压电陶瓷材料,研制出片式结构的压电陶瓷耦合器,并以它为隔离器件又研制出压电陶瓷耦合固体继电器。这种继种器的抗干扰能力、接通时间、触发灵敏度、绝缘电阻、交越失真等主要性能指标与传统的固体继电器相比有显著提高,显示出了很好的应用前景。     

Introduction, Nov. 1970

After more than five years of intensive research and development, avalanche diodes and transferred electron devices are established as useful and reliable microwave power generators. They have recently been employed increasingly in both military and commercial systems. Many manufacturers now have production capabilities for these devices, and fabrication technology has reached a sophisticated level. Volume production at relatively low cost is now feasible. Avalanche diodes and transferred electron devices now compete favorably on a cost and performance basis with vacuum tubes and solid-state harmonic generators in a wide variety of power-generation applications.     

A Half Century of Radar

As the IEEE celebrates its 100th anniversary, the practitioners of radar look back on fifty years of progress in their specialized field. Although microwave radar has been the dominant concern for most of this period, the earliest efforts and some of the most recent have used other regions of the spectrum-metric and now micrometer wavelengths. The evolutionary development of radar can be traced through this half century, punctuated by several major innovations in techniques and components: the microwave magnetron, high-power klystron and Amplitron transmitting tubes, coherent signal processing, monopulse tracking, pulse compression, electronically steered arrays, digital processing and control, and solid-state microwave devices. By comparing the appearance and performance of typical radar systems developed before and after each of these innovations, we can see how they have affected the art of radar, and we may also be able to predict what future developments will bring to this ever-changing field.     

Varactor diode for tuning high-power solid-state microwave oscillators

A novel varactor diode has been developed for tuning high-power microwave solid-state oscillators. The resulting output power against frequency remains much flatter than conventional high-power varactor-tuned oscillators.