Equation of State for <Emphasis Type="Italic">C</Emphasis><Subscript>60</Subscript> Fullerene Aqueous Solutions

In the present work PVT data of the C₆₀ fullerene aqueous solution (C₆₀ FAS) were measured as a function of the concentration of C₆₀ molecules using the variable cell method with metal bellows in the temperature range from 295 to 360 K at pressures from 0.1 to 103.2 MPa. On the liquid–vapor equilibrium line the density (ρ) of the C₆₀ FAS was measured using the pycnometer method. As a result, numerical values for the isothermal modulus of elasticity (K_T), isobaric expansivity (α_P), isothermal deviation of entropy factor (TΔS), enthalpy (ΔH), and internal energy (ΔU) have been determined. Finally, an equation of state for the C₆₀FAS was obtained for the first time.     

Photoacoustic Studies of Cd<Subscript>1-<Emphasis Type="Italic">x</Emphasis></Subscript>Be<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Se Mixed Crystals

This paper reports the results of photoacoustic measurements of Cd_1-xBe_xSe mixed crystals grown by the high pressure Bridgman method with varying concentrations of Be (0.1 < x < 0.2). For examining continuous wave photoacoustic spectra, a piezoelectric transducer (PZT) and an open cell were used. An increase of the energy gap with increasing x has been observed. The thermal diffusivity values were estimated using the dependence of the amplitude and phase of the PA signal on the light modulation frequency.Paper presented at the Fifteenth Symposium on Thermophysical Properties, June 22–27, 2003, Boulder, Colorado, U.S.A.     

Project of laser-pumped quantum <Emphasis Type="Italic">M</Emphasis><Subscript><Emphasis Type="Italic">X</Emphasis></Subscript> magnetometer

The possibility of creating a new scheme of a laser-pumped quantum magnetometric device based on a double-beam M _X magnetometer is considered. The proposed system ensures the simultaneous measurement of the modulus of the Earth’s magnetic field vector (with an absolute accuracy of 0.02 nT) and two angles of deviation of this vector with an absolute accuracy and sensitivity of not worse than 0.4″ (0.1 nT) at a measurement time of τ = 1 s. In contrast to the known analogous systems, the proposed scheme does not require generating additional magnetic fields.     

Nernst Signal in High-<Emphasis Type="Italic">T</Emphasis><Subscript><Emphasis Type="Italic">c</Emphasis></Subscript> Superconductors

The time-dependent Ginzburg–Landau equation with thermal noise is used to calculate the Nernst signal e _N , describing the Nernst effect, in type-II superconductor in the vortex-liquid regime. The Gaussian method used is an elaboration of the Hartree–Fock method. An additional assumption often made in analytical calculations that only the lowest Landau level significantly contributes to physical quantities of interest in the high-field limit is lifted by including all the Landau levels. The values of e _N are in good quantitative agreement with experimental data for temperature close to T _c on Bi₂Sr₂CaCu₂O_8+δ and Bi₂Sr₂Ca₂Cu₃O_10+δ .     

Thermodynamic modeling of BC<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>N<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript> chemical vapor deposition from mixtures of <Emphasis Type="Italic">N</Emphasis>-trimethylborazine and nitrogen

Thermodynamic modeling of the chemical vapor deposition of boron-carbonitride-based films in the B-C-N-H-O system using mixtures of N-trimethylborazine and nitrogen is carried out for reduced pressures (13.3 and 1.33 Pa) and a wide temperature range (300–1300 K). The source of oxygen impurities in this system is a residual pressure of 0.40 Pa. The results indicate that films of various compositions can be grown. The conditions for the deposition of BC _x N _y films are identified.     

Optical,Structural, and Photocarrier Studies of Cu<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>(CdTe)<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript>O<Subscript><Emphasis Type="Italic">z</Emphasis></Subscript> Thin Films

In this research quaternary alloy thin films made of Cu, CdTe, and O have been grown and characterized. The samples used in this investigation were grown simultaneously by reactive RF co-sputtering and by introducing oxygen and argon in the chamber during growth and changing the power in the Cu target from 10 W to 50 W. The carrier distribution as a function of the position was studied by using energy dispersive spectroscopy–scanning electronic microscopy (EDS–SEM), micro-Raman spectroscopy, and photocarrier images. Structural characterization was carried out by using X-ray diffraction. According to the results, a lateral carrier distribution was found in all samples and a new phase identified as Cu₂Te was revealed for samples grown at 50 W.     

Electrical and photoelectric properties of electrodeposited <Emphasis Type="Italic">n</Emphasis>-Si/<Emphasis Type="Italic">n</Emphasis>-Cd<Subscript>1 - <Emphasis Type="Italic">x</Emphasis></Subscript>Zn<Subscript>x</Subscript>S heterojunctions

n-Si/n-Cd_{1 - x} Zn_xS heterojunctions are produced by electrodepositing Cd_{1 - x} Zn_xS (0 x 0.6) films on silicon substrates, and their electrical and photoelectric properties are studied. The results demonstrate that the spectral response of the heterojunctions depends strongly on the film composition and heat-treatment conditions. The highest photosensitivity is achieved at x = 0.6 by heat treatment at 350°C for 7 min: V _OC = 0.5 V and I _SC = 3.8 mA/cm² under illumination of 1500 lx at 300 K.Translated from Neorganicheskie Materialy, Vol. 41, No. 3, 2005, pp. 276–280.Original Russian Text Copyright © 2005 by Mamedov, Gasanov, Amirova.This revised version was published online in April 2005 with a corrected cover date.This revised version was published online in April 2005 with a corrected cover date.     

Bandgap-tunable lateral and vertical heterostructures based on monolayer Mo<Subscript>1-<Emphasis Type="Italic">x</Emphasis></Subscript>W<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>S<Subscript>2</Subscript> alloys

The fabrication of heterostructures of two-dimensional semiconductors with specific bandgaps is an important approach to realizing the full potential of these materials in electronic and optoelectronic devices. Several groups have recently reported the direct growth of lateral and vertical heterostructures based on monolayers of typical semiconducting transition metal dichalcogenides (TMDCs) such as WSe₂, MoSe₂, WS₂, and MoS₂. Here, we demonstrate the single-step direct growth of lateral and vertical heterostructures based on bandgap-tunable Mo_1-x W _x S₂ alloy monolayers by the sulfurization of patterned thin films of WO₃ and MoO₃. These patterned films are capable of generating a wide variety of concentration gradients by the diffusion of transition metals during the crystal growth phase. Under high temperatures, this leads to the formation of monolayer crystals of Mo_1-x W _x S₂ alloys with various compositions and bandgaps, depending on the positions of the crystals on the substrates. Heterostructures of these alloys are obtained through stepwise changes in the ratio of W/Mo within a single domain during low-temperature growth. The stabilization of the monolayer Mo_1-x W _x S₂ alloys, which often degrade even under gentle conditions, was accomplished by coating the alloys with other monolayers. The present findings demonstrate an efficient means of both studying and optimizing the optical and electrical properties of TMDC-based heterostructures to allow use of the materials in future device applications.

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Synthesis of Zirconium Diboride Films and ZrB<Subscript>2</Subscript>/BC<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>N<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript> Heterostructures

Using mechanochemical synthesis, we have prepared zirconium borohydride, Zr(BH₄)₄, as a precursor for ZrB₂ film growth by chemical vapor deposition. We have carried out the thermodynamic modeling of phase formation processes in the Zr–B–(N)–H and Zr–B–(N)–H–O systems in a wide temperature range, from 100 to 2500°C, at various p_(H2)/p_(Zr(BH4)4) and p_(NH3)/p_(Zr(BH4)4) partial pressure ratios in the starting gas mixtures. A process has been proposed for the growth of zirconium diboride films by Zr(BH₄)₄ decomposition using two techniques: chemical vapor deposition and plasma-enhanced chemical vapor deposition. We also developed a process for the growth of multilayer ZrB₂-and BC _x N _y -based structures.     

Stress Intensity Factor <Emphasis Type="Italic">K</Emphasis><Subscript>I</Subscript> and <Emphasis Type="Italic">T</Emphasis>-Stress Determination in HDPE Material

For the characterization of high-density polyethylene (HDPE) pipes according to the operating conditions, the Nol ring test is an adequate method to rapidly and inexpensively determine the mechanical properties with good effectiveness. In this work, Nol ring tests will be carried out on HDPE material with different crack depth ratios. Based on these results, the brittle fracture of HDPE will be studied and a new experimental technique for measuring stress intensity factor (SIF) and T-stress under mode I conditions is developed. The formulation of the normal strains, close to the crack tip, is given using the first five terms of the generalized Westergaard formulation. Then, in a second step, these formulations are applied to analytically determine the optimum locations for the rectangular rosette to eliminate the errors due to higher order terms of the asymptotic expansion.     

<Emphasis Type="Italic">p</Emphasis>-AgCoO<Subscript>2</Subscript>/<Emphasis Type="Italic">n</Emphasis>-ZnO heterojunction diode grown by rf magnetron sputtering

P-type transparent semiconducting AgCoO₂ thin films were deposited by rf magnetron sputtering of sintered AgCoO₂ target. The AgCoO₂ films grown by rf sputtering were highly c-axis oriented showing only (001) reflections in the X-ray diffraction pattern unlike in the case of amorphous films grown by pulsed laser deposition (PLD). The bulk powder of AgCoO₂ was synthesized by hydrothermal process. The optical bandgap was estimated as 4·15 eV and has a transmission of about 50% in the visible region. The temperature dependence of conductivity shows a semiconducting behaviour. The positive sign of Seebeck coefficient (+220 μVK⁻¹) indicates p-type conductivity. Transparent p-n heterojunction on glass substrate was fabricated by rf magnetron sputtering of p-AgCoO₂ and n-type ZnO: Al thin films. The structure of the diode was glass/ITO/n-ZnO/p-AgCoO₂. The junction between p-AgCoO₂ and n-ZnO was found to be rectifying.     

Skyrmion mechanism of hole pairing in the high-<Emphasis Type="Italic">T</Emphasis><Subscript><Emphasis Type="Italic">c</Emphasis></Subscript> cuprates

A topological mechanism of hole localization as two skyrmions in the CuO₂ layers of high-T _c superconductors is suggested on the basis of a nonlinear σ model.     

<Emphasis Type="Italic">p</Emphasis>-<Emphasis Type="Italic">n</Emphasis> junctions in ZnO implanted with group V ions

n-Type ZnO〈Ga〉 films were implanted with 150-keV N⁺ (As⁺) ions to a dose of 7 × 10¹⁵ cm⁻² and then annealed in atomic oxygen at different temperatures. p-Type conductivity was obtained at annealing temperatures in the range 770–870 K. The parameters of the p-type layers were determined by photoluminescence spectroscopy, secondary ion mass spectrometry, and Hall effect measurements. According to the Hall data, the p-type layers had a resistivity of ∼30 Ω cm, carrier mobility of ∼2 cm²/(V s), and carrier concentration of ∼10¹⁸ cm⁻³. The electroluminescence spectra of the p-n junctions produced by ion implantation showed a band at 440 nm, due to recombination via donor-acceptor pairs.     

Thermal Transport Properties of Cd<Subscript>1-<Emphasis Type="Italic">x</Emphasis></Subscript>Mg<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Se Mixed Crystals Measured by Means of the Photopyroelectric Method

The concentration dependence of the thermal conductivity and thermal diffusivity were determined for Cd_1-x Mg _x Se mixed crystals in the temperature range between 20 ^◦C and 40 ^◦C. To determine the thermal transport properties, the photopyroelectric setup in the back detection configuration was constructed. In the concentration range 0< x <0.36, both thermal conductivity and thermal diffusivity were found to decrease with increasing magnesium concentration as well as with increasing temperature. The observed concentration dependence is discussed in the framework of the Adachi model.     

The Activation Energy <Emphasis Type="Italic">U</Emphasis>(<Emphasis Type="Italic">T</Emphasis>,<Emphasis Type="Italic">H</Emphasis>) in Y-based Superconductors

Based on the Arrhenius equation, a method to calculate the activation energy from the resistance transition is proposed for high temperature superconductors. This method is applied to the Y-based superconductors. The activation energy is found to be U(T,H)∼(1−T/T _c )^4.8(H/H ₀)^−3.8 of YBCO crystal, and U(T,H)∼(1−T/T _c )^3.3(H/H ₀)^−2.2 of Er doped MTG YBCO crystal, respectively. With the obtained activation energy U(T,H), the lower part of the experimental curve ρ(T,H) and its derivative can be reproduced.      

Facile fabrication of NiO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>H<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript> films and their unique electrochromic properties

The electrochromic (EC) NiO _x H _y films were fabricated through a facile sol–gel method. The formation of high quality NiO _x H _y films came from adding the xerogel back into the sol and prolonging the annealing time at gradually increasing temperature up to 250 °C. Scanning electron microscopy and atomic force microscopy characterizations indicated films were compact, homogenous, and smooth. Glance angle X-ray diffraction investigation testified NiO _x H _y films were of poor crystallization. The Fourier transform infrared, and thermogravimetry and differential thermal analysis showed that films contained the mixture of NiO, Ni(OH)₂, NiOOH, water, and organic substance. With the increasing of the xerogel ratio, the optical absorbance and reflectance of films had larger differences between the colored and bleached state, respectively. The film with the xerogel ratio of 1:5 showed excellent EC properties with a transmittance contrast as high as 60.88% at λ = 560 nm, which was higher than other sol–gel nickel oxide films reported.     

Investigation of mechanical and superconducting properties of iron diffusion-doped <Emphasis Type="Italic">Bi</Emphasis>-<Emphasis Type="Italic">2223</Emphasis> superconductors

The mechanical and superconducting properties of the Fe diffusion-doped (Bi-Pb)-2223 superconductor have been investigated. First, iron was evaporated on Bi-2223 superconductor and then the Fe layered superconductor was annealed at 830 °C for 10, 30 and 60 h. Static Vickers hardness, dc electrical resistivity, X-ray diffraction and scanning electron microcopy have been carried out to assess the effects of Fe doping. These measurements indicates that Fe doping, in comparison with the undoped samples, increased the critical transition temperature, and improved formation of high T _c phase, while decreasing the number and size of voids. Moreover, both microhardness and grain size were also enhanced by increasing the amount of diffusion. The values of microhardness were found to be load dependent. In addition, we have investigated the indentation size effect (ISE) behavior using some models such as the Kick’s law, modified proportional specimen resistance (MPRS) model and the Hays- Kendall (HK) approach. Among them, both HK and MPRS models are successful. In this study, the possible reasons of noticed improvement on mechanical and physical properties due to iron diffusion are discussed.     

Influence of graded interfaces on the exciton energy of type-I and type-II Si/Si<Subscript>1-<Emphasis Type="Italic">x</Emphasis></Subscript> Ge<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> quantum wires

The exciton properties of Si/Si _1-x Ge _x cylindrical quantum wires (QWRs) are calculated using the variational method and taking into account the existence of an interface layer between the materials. We consider two possibilities for the conduction band lineup, type-I and type-II. Our numerical results show that an interfacial fluctuation of 15Å in a Si _0.85 Ge _0.15 (Si_0.70Ge_0.30) type-I (type-II) wire of 50Å wire radius leads to an exciton energy blue shift of the order of 10 (10) meV.     

Progress in Critical Current Density (<Emphasis Type="Italic">J</Emphasis><Subscript><Emphasis Type="Italic">c</Emphasis></Subscript>) in Sintered MgB<Subscript>2</Subscript> Bulks

The present paper focuses on methods of further improving the flux pinning and critical current density of disk-shaped MgB₂ bulk superconductors by adding excess Mg metal in combination with an optimum silver content and optimized processing conditions. Bulk MgB₂ samples were produced by in situ solid-state reaction in Ar gas ambient using high purity commercial powders of Mg metal and 1.5 wt% carbon-coated amorphous B powders mixed in a fixed ratio of Mg/B = 1.1:2. Further, 4 wt% silver was added to improve flux pinning as well as mechanical performance of the bulk MgB₂ material. The magnetization measurements confirmed a sharp superconducting transition with T_c,onset at around 37 K, which is only by 1 K lower than in bulk MgB₂ material produced without carbon-coated amorphous boron. The critical current density (J_c) values significantly improved in the MgB₂ material with 4 wt% of silver and 1.5 wt% of carbon-coated amorphous boron, sintered at 775 ^°C for 3 h. At 20 K, this sample showed J_c at around 500 and 350 kA/cm² in the self-field and 1 T, respectively, which makes it suitable for several industrial applications.     

Monte Carlo Study of Magnetic Properties of Mixed Spins in a Fullerene <Emphasis Type="Italic">X</Emphasis><Subscript>30</Subscript><Emphasis Type="Italic">Y</Emphasis><Subscript>30</Subscript>-Like Structure

In this work, inspiring form of the fullerene-C60 structures, we study the mixed \( X_{30} Y_{30} \) fullerene-like structure and investigate its magnetic properties. In a such a structure, the carbons are assumed to be replaced by magnetic atoms having spin moments σ = 1/2 and S = 1. Firstly, we elaborate the ground-state phase diagrams in different physical parameter planes. In a second stage, we investigate the exchange coupling interaction effects in the absence or presence of both external magnetic and crystal fields. Using the Monte Carlo method, we carried out a study of the system magnetic properties and the thermal behavior of such a system for the ferromagnetic case. It is found that the critical temperature increases when increasing the coupling exchange interactions. On the other hand, the coercive magnetic field increases also when increasing the coupling exchange interactions. However, this physical parameter decreases when increasing the reduced temperature.