共查询到8条相似文献,搜索用时 0 毫秒
1.
W. G. Luo A. L. Ding K. S. Chan G. G. Shi A. Cheng E. C. M. Young 《Journal of Superconductivity》1992,5(3):239-244
We have used stoichiometric Y1Ba2Cu3O7–x
powder as magnetron sputtering target to deposit high-quality high-T
c
superconducting thin films on MgO, SrTiO3, and ZrO2 substrates. The zero-resistance temperatures are 86–88 K, and the 77 K zero-field critical current density is 8 × 105 A/cm2. The films are highlyc-axis oriented. Films deposited on 10 × 10 × 1 mm3 ZrO2 substrates have surface resistances below 25 m at 77 K and 94 GHz. Using powder targets instead of bulk targets has the following advantages: simple and low-cost target preparation, simple target replacement, and versatility for large-area deposition. 相似文献
2.
3.
Zhao ErjingZhang Weijia Lin JunYang Dongjie Havugimana Jean JacquesZhang Jing 《Vacuum》2011,86(3):290-294
ITO thin films were prepared by changing the experimental parameters including gas flow ratio, sputtering pressure and sputtering time in DC magnetron sputtering equipment. The stable experimental parameters of Ar flow at 70 sccm, O2 flow at 2.5 sccm ∼ 3.0 sccm, sputtering pressure around 0.5 Pa, and sputtering time of 80 s were obtained. Under these parameters, we had achieved the ITO thin films with low resistivity (<4 × 10−4 Ω ? cm) and high average transmissivity (95.48%, 350 nm ∼ 1100 nm). These ITO thin films were applied in nanocrystalline silicon solar cells as top transparent conductive layer. The solar cell test result showed that the open circuit voltage (Voc) was up to 534.9 mV and the short circuit current density (Jsc) was 21.56 mA/cm2. 相似文献
4.
Applying reactive direct current (DC) magnetron sputtering method, nanoparticle vanadium pentoxide thin films were deposited onto glass slides and KBr substrates at different substrate temperatures. The films were characterized by X-ray photoelectron spectroscopy and atomic force microscope. Infrared spectra were recorded with a Fourier transform infrared spectrophotometer. It was found that, excepting the compositions, the film growth and vanadium oxygen bonds were strongly affected by the substrate temperature. Electrical measurements indicated that the square resistances of films showed an exponential decrease from 46 MΩ/□ to 33 kΩ/□ with substrate temperature increasing from 433 K to 593 K, and that the square resistance-temperature curves of films exhibited typical semiconducting behavior. Optical investigations were carried out in the near infrared and ultraviolet-visible range. Transmittance varied from about 95 to 55% in near-infrared range when the substrate temperature was elevated. In ultraviolet-visible range, optical band gaps and refractive indexes of films were deduced according to the transmission and reflection spectra. 相似文献
5.
A. Andreone A. Barone A. Di Chiara F. Fontana G. Mascolo V. Palmieri G. Peluso G. Pepe U. Scotti Di Uccio 《Journal of Superconductivity》1989,2(4):493-500
superconducting thin films by Mo75Re25 single-target magnetron sputtering at various temperatures on sapphire substrates were prepared. Sharp superconductive transitions andT
c
values above 10 K were achieved, and the deposited films showed a good metallic behavior. According to structural analyses (EDS and X-rays), all the samples have the same stoichiometry as the target and, even at low deposition temperatures, they exhibit theA15 phase. From measured residual resistivities and superconducting critical temperatures the theoretical BCS surface resistances were estimated and compared to those o Mo60Re40 films, presented in a previous work. Both these alloys, in fact, being characterized by low surface resistances and high critical fields, are good candidates as coating films in r.f. cavities. 相似文献
6.
N.W. Khun 《Thin solid films》2009,517(17):4762-1544
Nitrogen doped amorphous carbon (a-C:N) thin films were deposited on p-Si substrates by DC magnetron sputtering at varying substrate temperature from room temperature (RT) to 300 °C. The bonding structure, surface morphology and adhesion strength of the a-C:N films were investigated by using X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, atomic force microscopy (AFM) and micro-scratch testing. The corrosion behavior of the a-C:N films was evaluated by potentiodynamic polarization test in a 0.6 M NaCl solution. The results indicated that the corrosion resistance of the films depended on the sp3-bonded cross-link structure that was significantly affected by the substrate temperature. 相似文献
7.
Carrier concentrations and mobilities of indium-tin-oxide (ITO) thin films by DC magnetron sputtering at the various process temperatures were measured using the Hall Technique. The relationship between the carrier concentrations and mobilities had two distinct regions: (i) roughly up to the process temperatures of 300°C with carrier concentrations of 9.0×1020/cm3, both carrier concentrations and mobilities increased together with the process temperatures; (ii) above the process temperature of 300°C with carrier concentrations over 9.0×1020/cm3, the carrier mobilities decreased as the carrier concentrations increased with the process temperatures. These distinct relationship between carrier concentrations and mobilities were due to the transition of the dominant electron scattering mechanisms in ITO thin films with the process temperatures. At low process temperatures, the crystallinities were low and the grain boundary scattering was dominant. However, at high process temperatures, ITO thin films were highly crystallized and the ionized impurity scattering was dominant. The overall characterizations related to the carrier concentrations and mobilities were also performed using an X-ray diffractometer and a scanning electron microscope. 相似文献
8.
Recently, piezoelectric thin films including zinc oxide (ZnO) and aluminium nitride (AlN) have found a broad range of lab-on-chip applications such as biosensing, particle/cell concentrating, sorting/patterning, pumping, mixing, nebulisation and jetting. Integrated acoustic wave sensing/microfluidic devices have been fabricated by depositing these piezoelectric films onto a number of substrates such as silicon, ceramics, diamond, quartz, glass, and more recently also polymer, metallic foils and bendable glass/silicon for making flexible devices. Such thin film acoustic wave devices have great potential for implementing integrated, disposable, or bendable/flexible lab-on-a-chip devices into various sensing and actuating applications. This paper discusses the recent development in engineering high performance piezoelectric thin films, and highlights the critical issues such as film deposition, MEMS processing techniques, control of deposition/processing parametres, film texture, doping, dispersion effects, film stress, multilayer design, electrode materials/designs and substrate selections. Finally, advances in using thin film devices for lab-on-chip applications are summarised and future development trends are identified. 相似文献