基于电场分布特性的环形栅器件SPICE模型研究

提出了一种新颖的、更加通用的环形栅器件版图等效宽度提取方法,用于解决目前商用SPICE模型中版图宽度提取方法不适用于环形栅器件这一问题．该方法基于环形栅中沟道电场分布特性,可用于提取多种形状环形栅版图宽度．提出了SPICE模型中模型参数的修改方法,使SPICE环形栅器件模型仿真更为精准．通过TCAD（计算机辅助设计）等多种仿真途径对该模型进行验证,结果表明该模型具有较高的精确度．     

一种精确的有机薄膜晶体管模型参数提取方法研究

提出了一种可以精确获得有机薄膜晶体管(OTFT)的直流电流-电压模型中的参数提取方法。该方法通过对实验获得的输出特性曲线和转移特性曲线进行计算和处理,精确获得OTFT器件模型中的7个参数。实验制备了两种采用不同绝缘栅的基于并五苯的底栅顶接触的OTFT,并对其进行了参数提取。利用提取的参数及直流电流-电压模型对OTFT进行模拟,将模拟结果与实验测试结果相比较发现,模拟得到的输出特性及转移特性与测试结果拟合得很好,验证了本文中参数提取方法的正确性。应用建立的模型及本文中的参数提取方法可以用于OTFT器件的设计与模拟。     

高频硅基光电晶体管SPICE模型的建立及关键参数的提取

硅基光电晶体管在高频通信、自动控制、电力系统领域具有广泛的应用前景.从系统验证和仿真的角度,迫切需要建立光电晶体管的等效电路模型,该模型需要包含电学特性和光学特性.本文提出了一种高频(100MHz～1GHz)硅基光电晶体管的SPICE(Simulation Program with Integrated Circuit Emphasis)等效模型,包含器件的主要光电特性,通过TCAD(Technology Computer Aided Design)仿真建立了模型中关键电学和光学参数的提取方法.基于所建立的高频光电晶体管的SPICE模型等效电路进行仿真,所得到的仿真结果能够完整描述光电晶体管的电学特性和光学特性,并验证了模型在器件模拟与电路应用上的可行性,表明本文所提出的SPICE模型和参数提取方法,对于基于高频光电晶体管的系统仿真,具有参考价值.     

VDMOS等效电路的SPICE模型

分析了VDMOS器件中存在的各种寄生效应以及这些寄生效应对器件性能的影响,在此基础上建立了VDMOS等效电路的SPICE模型.通过MEDICI数值分析软件,模拟VDMOS在不同偏置条件下的电压、电流、电容特性,从而提取出VDMOS等效电路模型参数.并用SPICE软件对等效电路仿真,进行了直流分析和瞬态分析,得到等效电路的电学特性曲线图.仿真的结果与MEDICI器件模拟工具模拟结果相互比较,具有较好的一致性.     

一种基于总剂量效应的SOI器件模型快速提取方法

从工程应用的角度介绍了一种基于总剂量效应的SOI器件模型参数的快速提取方法。首先,提取0 krad(Si)时器件的模型参数,然后针对总剂量敏感参数,对100 krad(Si)总辐射试验后的同种器件进行模型参数优化,并对得到的模型参数进行验证。结果表明,该方法所提取的模型参数准确有效,解决了国内目前在抗辐照SOI工艺中因采用标准SOI工艺SPICE模型(如BSIMSOI等)导致不能反映辐照效应对器件特性的影响且无法给出经过不同辐照剂量之后的器件特性的缺点,可用于评估辐射对SOI电路的影响。     

有机薄膜晶体管直流电流-电压模型的研究

通过对有机薄膜晶体管(OTFT)电流-电压特性的研究,建立了一种用于电路模拟的仿真程序(SPICE)的OTFT直流电流-电压模型,所用的参数都可从实验特性曲线中提取。对一种基于并五苯(Pentacene)的底栅顶接触(TC)结构的OTFT的实验曲线进行参数提取,并利用所得的参数与建立的模型进行仿真,得到的输出特性和转移特性曲线与实验结果无论在线性区还是在饱和区都具有较强的一致性,验证了本文所建模型及参数的准确性。建立的模型能够准确描述OTFT的直流特性,可用于有机电路的SPICE仿真。     

0.35μm BiCMOS工艺的器件建模

针对0.35μmBiCMOS工艺的MOS及Bipolar晶体管器件,分析其结构特征及相应物理效应,选取相应的晶体管器件理论模型,确定了样管测试条件和方法,设计了测试结构及模型验证环振电路,完成用于试验流片及参数提取的测试版芯片的设计,最终利用测试芯片的测量数据提取模型参数,分别建立高精度的MOS及Bipolar器件SPICE模型.     

35KCMOS器件LDD结构的SPICE宏模型

针对BSIM3v3模型在35K低温下无法模拟LDD(轻掺杂漏区)所引起的串联电阻异常,提出了可以模拟这一异常的SPICE宏模型.通过修改CMOS器件常温BSIM3v3模型中的一些与温度有关的参数值,得到35K BSIM3v3模型.模拟结果表明,根据此模型进行参数提取后的Ⅰ-Ⅴ特性曲线与实测曲线十分吻合.最后,运用此模型对CMOS传输门和两级运算放大器进行仿真,结果表明LDD串联电阻效应对这些电路产生了重要影响,该模型明显提高了低温BSIM3v3的仿真精度.     

基于分段拟合的SiC MOSFET模型优化方法

提出了一种基于分段拟合的SiC MOSFET模型优化方法.将表征静态特性的核心单元模型优化为分段模型,以使其能同时准确表征高、低栅压下器件的静态特性.同时,在模型分段处进行线性插值以保证模型函数的连续性,基于器件漏源支路元器件参数对拟合数据进行修正以提高模型表征参数的提取准确度.此外,为提高器件的动态模型准确度,增加了栅漏结电容模型函数的分段点,并给出了分段点选择方法.将优化前后栅漏结电容模型函数和静态仿真结果与测试获得的电容曲线、转移曲线和输出曲线进行对比,曲线匹配度较高,表明提出的优化方法显著提高了动态和静态模型的准确性.最后,搭建了SiC MOSFET开关特性测试平台,通过动态开关实验验证了模型优化方法的准确性.     

InP基HBT GP大信号模型直流参数提取的研究

基于HBT特殊的物理机理及结构,将适用于BJT的GP大信号模型用于InP基HBT的研究中.通过构建误差函数,采取解析法提取了该模型中的13项SPICE直流参数.并设计了参数提取实验装置,最后将研究结果用于发射极为2μm×19μm的InP/InGaAs HBT建模中.通过对比模型仿真和器件实测的数据可以看出,本文采用的HBT GP模型准确度高,可以较好地表征实际HBT器件的直流特性.     

Extraction of high-frequency equivalent circuit parameters ofsubmicron gate-length MOSFET's

As the effective gate-length of a MOSFET reduces, its high-frequency characteristics improve. However, they become more difficult to model. Current SPICE models are based on DC measurement data and simplistic capacitance models which can only approximate the high-frequency device characteristics up to a fraction of the device unity current gain frequency (f_τ). Thus, it is important to investigate the high-frequency characteristics and then incorporate the small-signal equivalent circuit parameters in SPICE. In this, work we report a simple nonquasi static model, which offers good accuracy needed for circuit simulation, and a new curve fitting method for the extraction of the network model elements. The current work is part of a study aimed at improving the existing scalable model for MOSFET's, and it focuses on extracting the elements of an equivalent circuit which describes the state-of-the-art device     

Semi-empirical model for the threshold voltage of a double implanted MOSFET and its temperature dependence

A simple and accurate semi-empirical model for the threshold voltage of a small geometry double implanted enhancement type MOSFET, especially useful in a circuit simulation program like SPICE, has been developed. The effect of short channel length and narrow width on the threshold voltage has been taken into account through a geometrical approximation, which involves parameters whose values can be determined from the curve fitting experimental data. A model for the temperature dependence of the threshold voltage for the implanted devices has also been presented. The temperature coefficient of the threshold voltage was found to change with decreasing channel length and width. Experimental results from various device sizes, both short and narrow, show very good agreement with the model. The model has been implemented in SPICE as a part of the complete d.c. model.     

An analytic model for the design and optimization of ion-implanted I/SUP 2/L devices

A set of simple analytic equations have been derived that model the transient characteristics of an I/SUP 2/L gate fabricated with ion implantation. The model equations are cast in terms of easily measured or calculated device parameters and are applicable at all current levels. Separate models for regions dominated by depletion and diffusion capacitance, respectively, are unnecessary. The model has been checked with a large circuit analysis program (SPICE). The gate delay model is combined with calculations from process and intrinsic device simulators, and measurements from specially designed test structures to explain the physical mechanisms that control the gate switching time. A method of scaling I/SUP 2/L structures is described in which process and geometry variations are possible. This scaling procedure is combined with the analytic gate model to predict the gate performance that might be expected from processing techniques such as X-ray and electron beam lithography.     

A SPICE compatible subcircuit model for lateral bipolar transistorsin a CMOS process

This paper describes a SPICE compatible subcircuit model of a lateral pnp transistor, which was fabricated in a 0.6 μm CMOS process. The extraction of a dc parameter set for the lateral device is more complicated than for a vertical device because of the presence of two parasitic vertical bipolar transistors which are formed by the emitter/collector, the base and the substrate regions. The SPICE Gummel-Poon model does not predict the substrate current accurately. This paper proposes a method which involves the use of a subcircuit incorporating three SPICE Gummel-Poon models [representing one lateral and two parasitic vertical bipolar junction transistors (BJT's)]. The development of this model, its implementation and the results obtained are outlined and discussed. This circuit model is SPICE compatible and can thus be used in commercial simulators. The model provides good agreement over a wide range of measured dc data including substrate current prediction     

RTD的器件模型和模拟——共振隧穿器件讲座(9)

阐述了电路模拟在设计和研制大规模集成过程中的必要性和重要意义,器件模型在电路模拟中的重要性以及器件模拟与器件模型的关系;在器件模拟通用软件形成过程的基础上重点讨论了RTD的器件模型、器件模拟和电路模拟软件SPICE三个课题;介绍了基于物理参数I-V方程RTD模型和高斯函数、指数函数RTD直流模型;利用ATLAS器件模拟通用软件对RTD进行了器件模拟,得到了势垒和势阱宽度、E区掺杂浓度等对RTDI-V特性的影响;以包含RTD电路的SPICE电路模拟中的文字逻辑门为例,通过电路模拟验证了其逻辑功能,对设计该电路起到指导和参考作用。     

一种基于神经网络的微波器件快速建模方法北大核心CSCD

随着微波器件结构复杂度的增长和产品性能要求的提高,微波器件建模不仅要能够描述其理想电磁特性,还要能快速准确反映多物理参数对器件性能的影响。虽然神经网络已经被引入到微波器件领域,但是将其应用于器件的多物理特性建模的研究还比较少。文章提出了一种基于人工神经网络的多物理参数建模方法来表示输入输出变量之间的非线性关系。提出了一种高效的神经网络多物理参数模型,并针对该模型引入了一种新的训练算法。所提出的模型可以快速准确地预测微波器件的多物理响应,如滤波器的S参数特性曲线、离子敏感场效应晶体管的输出特性曲线等。与有限元方法相比,此方法可以节省约98%的计算成本与99%的计算时间,为实现快速高效的微波器件行为级建模提供一种可行方法。     

RF-LDMOS器件宏模型研究

射频器件模型是射频电路仿真的基本要素之一。为了解决射频横向双扩散金属氧化物半导体晶体管（RF-LDMOS）缺乏准确SPICE模型的问题。此处提出了一种适用于带封装结构的RF-LDMOS器件宏模型建模及提模方法,并采用MBP软件进行验证分析。结果表明该宏模型建模方法能够很好的实现数据拟合,直流特性和射频特性的误差均在5%范围内,能够准确地反映器件的电学特性。     

Electrical characterization and modeling of alternating-currentthin-film electroluminescent devices

Electrical characterization of evaporated ZnS:Mn alternating-current thin-film electroluminescent (ACTFEL) devices is accomplished by capacitance-voltage (C-V) analysis. Interpretation of these C-V characteristics is aided by SPICE modeling and by electrical characterization of an ideal ACTFEL device constructed from discrete components, based on a simple equivalent circuit for the ACTFEL device. Various features of the C -V curve are ascribed to equivalent circuit parameters and associated device physics parameters     

结势垒控制肖特基整流管的优化设计

本文在分析结势垒控制肖特基整流管工作原理的基础上，详细讨论了器件特性与结构参数的关系；给出了器件优化设计的依据，建立了适用于ＳＰＩＣＥ电路分析程序的器件等效电路模型。