绒面ZnO:Al(ZAO)透明导电薄膜的制备

利用中频交流磁控溅射方法，采用氧化锌铝(98wt％ZnO 2wt％A12O3)陶瓷靶材制备了绒面ZAO(ZnO：Al)薄膜，考察了所制备的绒面ZAO薄膜与绒面SnO2：F薄膜在绒度、粗糙度、表面形貌以及电学性质的差异，利用原子力显徽镜对薄膜表面形貌进行了分析并计算出薄膜表面粗糙度，利用紫外可见分光光度计和电阻测试仪测量了薄膜的光学、电学特性。结果表明：所制备的绒面ZAO薄膜具有与绒面SnO2：F薄膜相比拟的各种性能，在非晶硅太阳电池中具有潜在的应用前景。     

生长条件对GaAs/Si薄膜结构特性的影响

该文介绍以单晶Si为衬底,热壁外延制备适合作太阳电池的GaAs多晶薄膜.采用电子探针(EPMA)测定薄膜的组分、表面与剖面形貌,x射线衍射(XRD)分析生长薄膜的结构特性.并分析了各种工艺条件对GaAs薄膜结构特性的影响,得出制备表面呈绒面结构、晶粒为柱状结构、可用作廉价、高效GaAs太阳电池衬底的多晶薄膜材料的最佳生长条件源温为900℃,衬底温度为700℃,生长时间为3h.     

透明导电ZnO:Al(ZAO)薄膜的结构及光电特性研究

ZAO薄膜是一种n型氧化物半导体材料,由于其大的载流子浓度和光学禁带宽度而表现出优良的光电特性。本实验采用射频磁控溅射工艺在无机玻璃衬底上制备ZAO薄膜,靶材为ZAO(3wt%Al2O3)陶瓷靶。系统研究了各工艺参数,如工作气压、射频功率、衬底温度和热处理条件对其结构和光电特性的影响。X射线衍射谱表明ZAO薄膜的(002)衍射峰的位置与纯ZnO晶体相比向低角度方向移动,薄膜中各晶粒具有六角纤锌矿晶体结构且呈c轴择优取向。原位制备的ZAO薄膜经热处理后电阻率降至7 5×10-4Ω·cm,可见光透过率在85%以上。     

在导电玻璃衬底上热壁外延生长GaAs薄膜

该文报道以导电玻璃为衬底,采用热壁外延方法,制备GaAs多晶薄膜材料.采用电子探针(EPMA)测定薄膜的组分、表面与剖面形貌,x射线衍射(XRD)分析生长薄膜的结构,Raman散射(RSS)、光致发光光谱(PL)分析其光学性能.结果表明该薄膜性能良好、表面呈绒面结构、适合制作GaAs薄膜太阳电池.并全面分析了现有制备工艺条件对GaAs薄膜性能的影响,得出最佳的生长温度条件源温为900～930℃,衬底温度为500℃.     

单晶硅电池碱腐蚀制绒工艺的试验研究

介绍了单晶硅电池碱腐蚀制绒技术和金字塔结构形成的原理,通过NaOH碱性溶液浓度、异丙醇浓度、制绒腐蚀时间、制绒腐蚀温度、硅酸钠含量等优化试验,制备出具有不同金字塔状绒面的太阳能电池。采用扫描电子显微镜观察样品的表面形貌,并进行了分析讨论。通过对影响金字塔状绒面性能质量的关键因素研究,得出了碱腐蚀制绒的最佳工艺参数:NaOH浓度为15 g/L;异丙醇体积浓度为3%～10%;反应时间为30 min;反应温度为85℃;Na2Si03.9H2O质量含量为5%;样品绒面平均反射率为9.1%。     

H2流量对直流磁控溅射低温沉积ZnO:Al薄膜结构与性能的影响

在Ar和H2的混合气氛下采用直流磁控溅射在玻璃衬底上低温沉积Al掺杂ZnO,即ZnO∶Al透明导电薄膜,研究H2流量(0～10sccm)对薄膜结构、形貌、光学和电学性能的影响。结果表明:不同H2流量下制备的ZnO∶Al薄膜均为高度C轴取向的六角纤锌矿结构,溅射过程中通入适量的H2能改善ZnO∶Al薄膜的结晶质量和表面形貌;所有薄膜在400～900nm范围内的平均透过率均高于85%;随着H2流量的增大,薄膜的载流子浓度升高,电阻率减小,达到10-4Ω.cm数量级。     

化学腐蚀法制备多晶硅的绒面

为了降低光在多晶硅表面的反射,采用化学腐蚀法在其表面制备了绒面。根据反射光谱的测试结果,研究了不同多晶硅绒面的形貌特征及光学特性。在适当的腐蚀液中制备了3×3cm2、5×5cm2和10×10cm2多晶硅绒面。10×10cm2多晶硅绒面,在300～1100nm波长范围内的加权反射率的最好结果为5 2%,表面织构均匀,这一结果可以和具有双层减反射膜的多晶硅表面的反射率相比拟。     

汽轮机末级叶片用SP-700钛合金AlCrN涂层结构与性能研究

为了探究基体负偏压对离子镀涂层结构与性能的影响,采用3种不同工艺在SP-700钛合金表面沉积了AlCrN薄膜。利用扫描电子显微镜(SEM)、光学显微镜、X射线衍射仪(XRD)、维氏显微硬度计、往复摩擦磨损实验仪、白光干涉三维表面轮廓仪和电化学工作站测试了涂层的形貌、物相组成、显微硬度、耐磨性能及电化学腐蚀性能;通过浸泡腐蚀方法测定了涂层在质量分数为5%的HF溶液中的腐蚀行为。结果表明：离子镀涂层表面致密,主要由立方(Cr, Al)N相和立方Al相组成,显微硬度较高;摩擦磨损过程中,涂层摩擦因数低,工艺2样品的磨损量最小,相对耐磨性可达902.26;AlCrN涂层在质量分数为3.5%的NaCl溶液中的电化学腐蚀性能与钛合金基体相近;AlCrN涂层在HF溶液中具有更好的耐腐蚀性能。     

Al/Ga共掺杂ZnO透明导电薄膜的正交优化

利用正交试验,对溶胶-凝胶法(sol-gel)制备Al/Ga共掺杂Zn O透明导电薄膜(GAZO)的工艺进行优化,研究溶胶浓度、掺杂配比、热处理温度、薄膜厚度等因素对薄膜光电性能的影响规律。分别以薄膜的透光率和电阻率作为评价指标,确定制备GAZO薄膜的最佳工艺参数。采用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、可见分光光度计和双电测四探针电阻率测试仪分别分析薄膜的结构、表面形貌以及光电性能等。结果表明:Al和Ga的掺入未影响Zn O的晶体结构,也未生成其他杂质氧化物。最佳工艺条件下,薄膜在可见光范围内的透过率为88.458%,电阻率为2.66×10~(-3)Ω·cm。     

Ga、Al共掺杂及单掺杂ZnO基透明导电薄膜的研究

采用溶胶-凝胶旋涂法制备出Ga、Al共掺杂和单掺杂Zn O基透明导电薄膜[Zn O∶(Ga,Al)(GAZO),Zn O∶Al(AZO)和Zn O∶Ga(GZO)],利用XRD、SEM、AFM、四探针电阻率测试仪和可见分光光度计测试技术,分析薄膜的结构、表面形貌和光电性能等。结果表明:薄膜表面光滑,呈六方纤锌矿结构,且沿C轴择优取向;与单掺杂薄膜相比,Ga、Al共掺杂可促进晶体生长,细化晶粒,并在一定范围内提高薄膜的透光率。与纯Zn O薄膜相比,共掺杂和单掺杂薄膜的电阻率均明显降低。     

High quality textured ZnO:Al surfaces obtained by a two-step wet-chemical etching method for applications in thin film silicon solar cells

ZnO:Al films deposited at 250 °C on Corning glass by radio frequency magnetron sputtering were studied for their use as front contact for thin film silicon solar cells. For this purpose, a two-step etching method combining different concentrations of diluted hydrochloric acid (from 0.1% to 3%) with different etching times was developed. Its influence on morphological, electrical and optical properties of the etched films was evaluated. This new etching method led to more uniform textured surfaces, where the electrical properties remained unchangeable after the etching process, and with adapted light scattering properties similar to those exhibited by commercial substrates.     

Structural and optical properties of textured ZnO:Al films on glass substrates prepared by in-line rf magnetron sputtering

Textured ZnO:Al films with excellent light scattering properties as a front electrode of silicon thin film solar cells were prepared on glass substrates by an in-line rf magnetron sputtering, followed by a wet-etching process to modify the surface morphologies of the films. Deposition parameters and wet etching conditions of the films were controlled precisely to obtain the optimized surface features. All as-deposited films show a strong preferred orientation in the [0 0 1] direction under our experimental conditions. The microstructure of the films was significantly affected by working pressure and film compactness was reduced with increasing working pressure, while the effect of a substrate temperature on the microstructure is less pronounced. A low resistivity of 4.25×10⁻⁴ Ω cm and high optical transmittance of above 80% in a visible range were obtained in the films deposited at 1.5 mTorr and 100 °C. After wet etching process, the surface morphologies of the films were changed dramatically depending on the microstructure and film compactness of the initial films. By controlling the surface feature, the haze factor and angular resolved distribution of the textured ZnO:Al films were improved remarkably when compared with commercial SnO₂:F films. The textured ZnO:Al and SnO₂:F films were applied as substrates for a silicon thin film solar cells with tandem structure of a-Si:H/μc-Si:H. Compared with the solar cells with the SnO₂:F films, a significant enhancement in the short-circuit current density of the μc-Si:H bottom cell was achieved, which is due to the improved light scattering on the highly textured ZnO:Al film surfaces in the long wavelength above 600 nm.     

热处理对化学水浴沉积法制备的CuInS2薄膜的影响

采用二步化学水浴沉积法制备了太阳电池材料CuInS2薄膜，通过XRD、EDX和SEM，对薄膜的结构、成分、形貌进行了研究，并研究了不同的热处理过程对CuInS2薄膜的形成的影响。研究指出：二步化学水浴沉积法制备的CuInS2薄膜经过非真空的一步高温长时间热处理，薄膜容易被氧化，而在低真空下，采取低温一高温两步退火处理后，薄膜的结晶度和形貌都有一定程度的提高，因此后一热处理过程适合化学水浴沉积法制备CuInS2薄膜的后续热处理。     

电沉积法制备CuxS薄膜及其性质研究

利用电沉积的方法制备CuxS薄膜，研究了不同的络合剂，不同的硫源及不同的热处理温度对电沉积制备CuxS薄膜性质的影响。研究发现：不同的络合剂可以制备得到不同相的CuxS薄膜，用EDTA作为络合剂的时候得到是六方相的Cu2S其主要晶面是(102)，当用柠檬酸钠作为络合剂的时候得到的是单斜的Cu31Sl6其主要晶面是(842)。当用Na2S2O3作为硫源的时候得到的是单斜的Cu31S16其主要晶面是(842)，当用硫脲作为硫源的时候得到是六方相的CuxS其主要晶面是(102)。随着热处理温度的提高，薄膜的结晶程度有了很大的提高，晶粒有了明显的长大，不同温度的热处理证实了CuxS薄膜的生长是沿着[102]方向定向生长的。     

太阳电池用CuInSe_2薄膜的电化学可控沉积

采用恒电位电沉积法制备了CuInSe_2薄膜材料,通过循环伏安分析探讨了Cu~(2+)、In~(3+)和H_2SeO_3单独沉积和共沉积的电化学行为,并研究了沉积电位对薄膜化学计量组成、形貌和物相组成的影响规律。研究表明:柠檬酸根离子对Cu~(2+)和H_2SeO_3具有络合作用,而对In~(3+)的络合不明显。共沉积时,Cu最先还原,然后诱导Se的沉积,两者反应形成的铜硒化合物Cu_xSe又诱导In的欠电位沉积,并与之反应生成CuInSe_2。在阴极电位为-0.58～-0.90Vvs.SCE时出现了不随电位变化的极限还原电流,在该电位范围内进行电沉积获得了化学计量组成稳定可控且相对致密平整的CuInSe_2薄膜。     

Excimer laser annealing and chemical texturing of ZnO:Al sputtered at room temperature for photovoltaic applications

We demonstrate the effect of excimer (XeCl=308 nm) laser annealing on thin films of ZnO:Al deposited by RF sputtering at room temperature. The as-deposited films have good sheet resistance (<11 Ω/□) but poor transparency, and a subsequent chemical etching step using dilute HCl to texture the film surface results in a level of haze ineffective for light-trapping in thin film photovoltaic cells. Excimer laser annealing at the optimized fluence (single pulses of 0.5-0.7 J/cm²) improves the film transparency, particularly through a blue-shift in the band-gap, without significantly impacting the conductivity. More importantly, chemical etching of these laser annealed films results in textured films with controllable spectral distributions of haze. We demonstrate the enhanced optical properties (transmission and haze) after laser annealing and etching the ZnO:Al films through the fabrication of hydrogenated microcrystalline silicon pin solar cells, and show a significant improvement in the photocurrent density (up to 2.2 mA/cm²) for the optimally annealed substrates—particularly at wavelengths greater than 600 nm (up to 1.7 mA/cm²) where light-trapping is important.     

太阳电池用共掺杂ZnO透明导电薄膜的结构及性能

采用直流磁控溅射法在室温条件下制备出Al,Zr共掺杂ZnO透明导电薄膜.用XRD和SEM分析和观察了薄膜的组织结构和表面形貌,着重分析了靶基距对薄膜结构和光电性能的影响.研究结果表明,制备的Al,Zr共掺杂ZnO透明导电薄膜为具有C轴择优取向、六角纤锌矿结构的多晶薄膜.靶基距对Al,Zr共掺杂Zn0透明导电薄膜的结构和...     

化学水浴沉积CIGS太阳电池缓冲层ZnS薄膜的研究

在含有ZnSO4、SC(NH2)2、NH4OH的水溶液中采用CBD法沉积ZnS薄膜,研究了沉积时间、水浴温度、搅拌等工艺条件对沉积薄膜的影响。薄膜的厚度与搅拌的强度有很大关系,表明扩散传质是薄膜生长的控制步骤。XRF和XRD测试表明沉积的薄膜中含有ZnS和Zn(OH)2,SEM测试表明薄膜颗粒大小相近,但不致密。随着沉积时间的增加,薄膜厚度增加,透过率减小。当前采用CBD-ZnS薄膜制备的无镉CIGS太阳电池转换效率达到8.54%。     

晶相形成对TiSi2薄膜光学性能的影响

通过常压CVD方法由SiH4和TiCl4直接在玻璃基板上成功制备了TiSi2薄膜,用XRD、FESEM、四探针测阻仪和分光光度计研究了薄膜的结构、形貌、电学和光学性能。研究表明TiSi2薄膜的晶相是面心正交型TiSi2;薄膜的电阻率直接由晶相的形成决定,受晶相颗粒大小和晶相致密度控制,TiSi2薄膜的电阻率随薄膜中TiSi2晶相含量的增大而下降。TiSi2薄膜在400~750nm范围的可见光区具有大致相同的透射比和最小的反射比,薄膜的透射比随薄膜厚度的增加而减小。在大于750nm的红外区,薄膜电阻率越小,对红外辐射的反射比越高,且随着波长增加至25000nm,TiSi2薄膜的反射比逐渐上升到约0.95。     

Visible and near infrared light absorbance of Ag thin films deposited on ZnO under layers by magnetron sputtering

The correlation among the electrical, optical and structural properties of Ag thin films was investigated. Low-emissivity (low-e) coatings consisting of glass/ZnO/Ag were deposited by magnetron sputtering. The ZnO thin films were deposited under various oxygen gas pressures to vary the property of Ag thin films deposited on them. When the ZnO thin films were deposited in low oxygen gas pressure, the Ag thin films deposited on the ZnO thin films exhibited low resistivity and smooth surface. Besides, it was found that the low-emissivity coatings with low visible and near infrared light absorbance were obtained using the low-resistive and smooth Ag thin films. It was concluded from the results that the light absorbance became low with decreasing the resistivity of Ag thin films in accordance with Drude's theory in the case where the Ag thin films exhibited sufficiently smooth surface. Furthermore, it can be considered that the surface plasmon polariton of Ag thin films had an influence on the optical property when their surface became rough. The optical absorbance of the low-e coatings should be determined as the result of the competition between two factors: resistivity and surface roughness of Ag thin films.