绝缘衬底上化学气相沉积法生长石墨烯材料

利用化学气相沉积法,在Si衬底、蓝宝石衬底和SiC衬底上生长石墨烯材料,研究石墨烯的表面形貌、缺陷、晶体质量和电学特性。原子力显微镜、光学显微镜和拉曼光谱测试表明,Si_3N_4覆盖层可以有效抑制3CSiC缓冲层的形成;低温生长有利于保持材料表面的平整度,高温生长有利于提高材料的晶体质量。5.08cm蓝宝石衬底上石墨烯材料,室温下非接触Hall测试迁移超过1000cm2·V~(-1)·s~(-1),方块电阻不均匀性为2.6%。相对于Si衬底和蓝宝石衬底,SiC衬底上生长石墨烯材料的表面形态学更好,缺陷更低,晶体质量和电学特性更好,迁移率最高为4900cm2·V~(-1)·s~(-1)。     

LiF对Na3AlF6-Al2O3熔盐电解阴极过程的影响

电解铝工业中铝在阴极上析出,铝析出反应的机理对电解铝生产具有理论指导意义。在运用循环伏安法研究的基础上,通过理论计算,对Na₃AlF₆-Al₂O₃和Na₃AlF₆-Al₂O₃-LiF体系中金属铝在钨电极上的电化学沉积行为以及铝钨金属间化合物的形成机理进行了研究。结果表明：两体系中铝钨金属间化合物在50 mV·s^-1≤ν≤150 mV·s^-1扫描速率下的形成过程是受扩散控制的准可逆过程。在化合物形成的过程中,两体系中Al³⁺的扩散系数从4.54×10^-9 cm²·s^-1增长到5.71×10^-9 cm²·s^-1,Al³⁺反应的活化能分别为11.14 kJ·mol^-1和10.47 kJ·mol^-1。在Na₃AlF₆-Al₂O₃-LiF体系的还原过程中,Li并没有还原析出,而在氧化过程中Al在金属间化合物中的氧化电流增大;在恒电流电解时,Al-W金属间化合物并不溶于熔盐中,会附着在工作电极表面,LiF的加入会使电极表面的WAl₄量变小,取而代之的是Al₂O₃的增加,说明LiF的加入使电解更加稳定,抑制了电极表面WAl₄的生长。     

物理气相传输法SiC衬底上生长AlN单晶的研究进展

氮化铝(AlN)是直接带隙半导体，具有超宽禁带宽度(6.2 eV)、高热导率[3.2 W/(cm·K)]、高表面声波速率(V_L=10.13×10⁵ cm/s,V_T=6.3×10⁵ cm/s)、高击穿场强和稳定的物理化学性能，是紫外/深紫外发光材料的理想衬底，由此制作的Al_xGa_1–xN材料，还可以实现200～365 nm波段内的连续发光；可以制作耐高压、耐高温、抗辐射和高频的电子器件，是具有巨大潜力的新一代半导体材料。本文介绍了物理气相传输法异质外延生长AlN单晶的原理，并从碳化硅(Si C)衬底上AlN单晶生长研究历程、Al N/SiC衬底生长AlN晶体以及偏晶向SiC衬底生长AlN晶体3个方面综述了SiC衬底上异质外延生长AlN晶体的研究进展。最后简述了SiC衬底上生长AlN单晶面临的挑战和机遇，展望了AlN材料的未来发展前景。     

光电化学刻蚀方法去除SiC衬底外延石墨烯缓冲层及其表征

高温条件下裂解碳化硅（SiC）单晶,在直径5 cm的4H-SiC（0001）面制备出单层石墨烯。利用光电化学刻蚀方法,使KOH刻蚀液与SiC发生反应,降低石墨烯与衬底之间的相互作用力,去掉原位生长过程中SiC衬底与石墨烯之间存在的缓冲层,获得准自由的双层石墨烯。首先通过对比不同的电流密度和光照强度,总结出电流密度为6 mA·cm^-2、紫外灯与样品间距为3 cm时,石墨烯缓冲层的去除效率以及石墨烯质量皆为最佳。采用此优化后工艺处理的样品,拉曼光谱表明原位生长的缓冲层与衬底脱离,表现出准自由石墨烯的特性。X射线光电子能谱（XPS）C1s谱图中代表上层石墨烯与衬底Si悬键结合的S1、S2特征峰消失,即石墨烯缓冲层消失。通过分析刻蚀过程中的电化学曲线,提出了刻蚀过程的化学反应过程中的动态特性。     

磺化含酚酞侧基聚芳醚酮/氧化石墨烯复合质子交换膜的性能

采用共混制备了一系列磺化含酚酞侧基聚芳醚酮(SPEK-C)/氧化石墨烯(GO)复合质子交换膜,系统地研究了GO含量对复合膜性能的影响。结果表明,GO含量对膜的离子交换容量、稳定性、质子电导率和甲醇渗透率等有重要影响。复合膜质子电导率随GO含量增加而提高,GO含量为2%和5%的复合膜在80℃下质子电导率均在10^-1 S·cm^-1以上。80℃下,GO含量为5%的复合膜甲醇渗透率为6.69×10^-7 cm²·s^-1,低于同温度下复合前SPEK-C膜1个数量级。复合后膜的化学稳定性增强,离子交换容量和含水率均有提高,相对选择性明显增大,最高达SPEK-C的18.2倍。     

硝基苯在离子液体BPyBF4/H2O中的电化学行为

在离子液体1-丁基吡啶四氟硼酸盐(BPyBF₄)的水溶液中,采用循环伏安法(CV)、计时电流法(CA)、恒电位电解及原位红外光谱法(in-situ FTIRS)等研究了硝基苯在铂电极上的电化学还原行为。研究结果表明:硝基苯在离子液体BPyBF₄/H₂O体系中的还原过程是受扩散控制的,其还原产物主要是偶氮苯,经估算得到硝基苯在该体系中的扩散系数为3.1×10^-7 cm²·s^-1,提高温度和加入一定浓度的水均有利于硝基苯在该体系中的电化学还原。     

镍掺杂对FTO薄膜光电性能的影响及机理分析

本文以单丁基三氯化锡(MBTC)为锡源,氟化铵(NH₄F)为氟源,甲醇为溶剂,六水合氯化镍(NiCl₂·6H₂O)为镍源,采用气溶胶辅助化学气相沉积(AACVD)制备了镍掺杂FTO薄膜。利用分光光度计、四探针电阻仪及霍尔效应测试仪对镍掺杂FTO薄膜的光学性能、电学性能进行表征和分析,并基于第一性原理对掺杂体系的电子结构进行了计算。结果表明,Ni掺杂的FTO薄膜为四方金红石结构,导电性能有所提高。当Ni/Sn为2%(原子数分数)时,品质因数Φ_TC达到3×10^-2Ω^-1,电阻率ρ为3.79×10^-4Ω·cm,可见光平均透过率约为80%,载流子浓度n为6.88×10²⁰ cm^-3,迁移率μ为13.31 cm²·V^-1·s^-1。     

酚醛树脂基板真空热解炭制备高性能活性炭

以一种全新的物质--阻燃的FR-1型酚醛树脂电路板基板的真空热解炭渣为原料,采用CO₂和KOH活化法制备高性能的活性炭。分别研究了CO₂活化法中的活化温度和KOH活化法中的碱炭比对活性炭产品性能的影响。用氮气吸附表征了活性炭的孔结构性质,并检测了产品的亚甲基蓝值和碘值。结果表明,KOH活化所得活性炭有更高的亚甲基蓝值(928.3 mg·g^-1 vs 231.5 mg·g^-1)、碘值(2442.2 mg·g^-1 vs 946.6 mg·g^-1)、比表面积(2289 m²·g^-1 vs 1198 m²·g^-1)和孔体积(1.317 cm³·g^-1 vs 0.703 cm³·g^-1)。所得产品均达到国家一级品标准。用这种原料制备高性能活性炭不仅解决了废弃物资源化的问题,还开发出一种新的、廉价的制备高性能活性炭的原料和方法工艺。     

高压静电场对纤维素Iβ中甲醛扩散的影响

采用分子动力学的方法,进行了在不同高压电场作用下,甲醛分子在纤维素Iβ中扩散运动的模拟。结果表明：当电场强度从0增大到10⁹ V·m^-1时,扩散系数由5.64×10^-10 m²·s^-1增大到7.768×10^-10 m²·s^-1,增大了约38%,说明高压静电场加强了甲醛分子在纤维素Iβ中的扩散运动,提高了扩散系数;电场强度能有限增强纤维素链的整体移动,并不会破坏纤维素的稳定性;高压静电场的施加,改变了甲醛分子与纤维素Iβ相互作用,提高了静电作用、范德华作用和总相互作用。     

葡萄糖基多孔碳材料对CO2/CH4的分离性能

以淀粉糖（主要成分为葡萄糖）为碳前体,制备了一系列多孔碳材料（C-GLCs-800）,对其进行孔隙结构分析,并应用FT-IR、SEM、TGA对其进行了表征,测定了材料在288、298和308 K下的CO₂和CH₄吸附等温线,根据IAST理论预测了材料对CO₂/CH₄二元体系的吸附选择性。实验结果显示,活化条件对材料的孔隙结构有明显影响,随着KOH/C质量比的增加,所制备的C-GLCs-800比表面积和总孔容先增加后降低。其中C-GLC-800-4的BET比表面积高达3153 m²·g^-1,总孔容为2.056 cm³·g^-1。C-GLC-800-2的窄微孔（V_d<1 nm,孔容0.3538 cm³·g^-1）含量最高,为30.63%。C-GLC-800-2在298 K和10⁵ Pa下对CO₂吸附量高达3.96 mmol·g^-1,明显高于许多传统吸附材料和MOFs材料在相同条件下对CO₂的吸附容量。应用Clausiuse-Clapeyron方程计算了CO₂和CH₄在材料上的吸附热,应用IAST理论计算了CO₂/CH₄的吸附选择性,结果显示C-GLC-800-2对CO₂/CH₄的吸附选择性为8.35。     

Electrodeposition and characterization of Cu2O thin films using sodium thiosulfate as an additive for photovoltaic solar cells

Cuprous oxide(Cu_2 O) thin films have been grown by electrodeposition technique onto ITO-coated glass substrates from aqueous copper acetate solutions with addition of sodium thiosulfate at 60 ℃. The effects of sodium thiosulfate on the electrochemical deposition of Cu20 films were investigated by cyclic voltammetry and chronoamperometry techniques. Deposited films were obtained at-0.58 V vs. SCE and characterized by X-ray diffraction(XRD), Fourier transform infrared spectroscopy(FTIR), scanning electron microscopy(SEM), and optical, photoelectrochemical and electrical measurements. X-ray diffraction results indicated that the synthesized Cu20 films had a pure cubic phase with a marked preferential orientation peak along(200) plane and with lattice constants a = b = c = 0.425 nm. FTIR results confirmed the presence of Cu_2 O films at peak 634 cm~(-1) SEM images of Cu_2 O films showed a better compactness and spherical-shaped composition. Optical properties of Cu20 films reveal a high optical transmission(80%) and high absorption coefficient(α 10~4 cm~(-1)) in visiblelight region. The optical energy band gap was found to be 2.103 eV. Photoelectrochemical measurements indicated that Cu20 films had n-type semiconductor conduction, which confirmed by Hall Effect measurements.Electrical properties of Cu20 films showed a low electrical resistivity of 61.30 Ω·cm~(-1), carrier concentration of-4.94 × 10~(15)cm~(-3) and mobility of 20.61 cm~2· V~(-1)·s~(-1).The obtained Cu_2 O thin films with suitable properties are promising semiconductor material for fabrication of photovoltaic solar cells.     

干法制备高中孔率生物质成型活性炭

以锯末为原料,氯化锌为活化剂,不添加黏结剂,采用干法混合后直接成型活化制备高中孔率生物质成型活性炭。为考察这种工艺的可行性,通过单因素实验,以亚甲基蓝吸附值为评价指标,考察了盐料比、活化温度、活化时间与成型密度对生物质成型活性炭吸附性能的影响,得出较优工艺条件为:盐料比1.0:1,活化温度950℃,活化时间为60min,成型密度为1.4g·cm^-3。在此工艺条件下制备得到的生物质成型活性炭,其亚甲基蓝吸附值为387mg·g^-1,BET比表面积为2104m²·g^-1,平均孔径为3.11nm,总孔容为1.63cm³·g^-1,中孔孔容为1.17cm³·g^-1,中孔率高达71.8%,初步证明了干法制备高中孔率生物质成型活性炭工艺的可行性。     

Electrochemical analysis and convection-enhanced mass transfer synergistic effect of MnOx/Ti membrane electrode for alcohol oxidation

The different electrocatalytic reactors could be constructed for the electrocatalytic oxidation of 2,2,3,3-tetrafluoro-1-propanol(TFP) with two typical MnO_x/Ti electrodes, i.e.the electrocatalytic membrane reactor(ECMR) with the Ti membrane electrode and the electrocatalytic reactor(ECR) with the traditional Ti plate electrode.For the electro-oxidation of TFP, the conversion with membrane electrode(70.1%) in the ECMR was 3.3 and 1.7 times higher than that of the membrane electrode without permeate flow(40.8%) in the ECMR and the plate electrode(21.5%) in the ECR, respectively.Obviously, the pore structure of membrane and convection-enhanced mass transfer in the ECMR dramatically improved the catalytic activity towards the electro-oxidation of TFP.The specific surface area of porous electrode was 2.22 m~2·g~(-1).The surface area of plate electrode was 2.26 cm~2(1.13 cm~2× 2).In addition, the electrochemical results showed that the mass diffusion coefficient of the MnO_x/Ti membrane electrode(1.80 × 10~(-6) cm~2·s~(-1)) could be increased to 6.87 × 10~(-6) cm~2·s~(-1) at the certain flow rate with pump, confirming the lower resistance of mass transfer due to the convection-enhanced mass transfer during the operation of the ECMR.Hence, the porous structure and convection-enhanced mass transfer would improve the electrochemical property of the membrane electrode and the catalytic performance of the ECMR,which could give guideline for the design and application of the porous electrode and electrochemical reactor.     

蓝宝石衬底上PECVD生长石墨烯及其气敏传感器

在蓝宝石衬底上,利用PECVD在相对较低的温度和相对短的时间制备石墨烯。实验发现,在950℃,生长15 min,可制备纳米晶石墨烯。所制备的石墨烯为双层结构,存在较多的缺陷,使得其适合用于制作气敏传感器。制作的纳米晶石墨烯气敏传感器对甲醛气体显示出良好的响应和恢复特性。分析发现纳米晶石墨烯中大量的晶界和褶皱使气体的吸附和解吸附能垒降低是其表现出良好气敏特性的主要原因。     

Gas separation using sol-gel derived microporous zirconia membranes with high hydrothermal stability☆

A microporous zirconia membrane with hydrogen permeance about 5 × 10?8 mol·m?2·s?1·Pa?1, H2/CO2 permselectivity of ca. 14, and excellent hydrothermal stability under steam pressure of 100 kPa was fabricated via polymeric sol–gel process. The effect of calcination temperature on single gas permeance of sol–gel derived zirconia membranes was investigated. Zirconia membranes calcined at 350 °C and 400 °C showed similar single gas permeance, with permselectivities of hydrogen towards other gases, such as oxygen, nitrogen, methane, and sulfur hexafluoride, around Knudsen values. A much lower CO2 permeance (3.7 × 10?9 mol·m?2·s?1·Pa?1) was observed due to the interaction between CO2 molecules and pore wall of membrane. Higher calcination tem-perature, 500 °C, led to the formation of mesoporous structure and, hence, the membrane lost its molecular siev-ing property towards hydrogen and carbon dioxide. The stability of zirconia membrane in the presence of hot steam was also investigated. Exposed to 100 kPa steam for 400 h, the membrane performance kept unchanged in comparison with freshly prepared one, with hydrogen and carbon dioxide permeances of 4.7 × 10?8 and~3 × 10?9 mol·m?2·s?1·Pa?1, respectively. Both H2 and CO2 permeances of the zirconia membrane de-creased with exposure time to 100 kPa steam. With a total exposure time of 1250 h, the membrane presented hydrogen permeance of 2.4 × 10?8 mol·m?2·s?1·Pa?1 and H2/CO2 permselectivity of 28, indicating that the membrane retains its microporous structure.     

Epitaxial Aluminum-Doped Zinc Oxide Thin Films on Sapphire: II, Defect Equilibria and Electrical Properties

The electrical transport properties of epitaxial ZnO films grown on different orientations of sapphire substrates have been measured as a function of partial pressure of oxygen. After equilibration, the carrier concentration is found to change from a p ^-1/4_O2 to a p ^-3/8_O2 dependence with increasing oxygen partial pressure. The partial pressure dependence is shown to be consistent with zinc vacancies being the rate-controlling diffusive species. In addition, the carrier concentration in ZnO films grown on A-, C-, and M-plane sapphire are the same but that of R-plane sapphire is systematically lower. Electron Hall mobility measurements as a function of carrier concentration for all the substrate orientations exhibit a transition from "single-crystal" behavior at high carrier concentrations to "polycrystalline" behavior at low carrier concentrations. This behavior is attributed to the effective height of potential barriers formed at the low-angle grain boundaries in the epitaxial ZnO films. The trap density at the grain boundaries is deduced to be 7 × 10¹²/cm². The electron mobility, at constant carrier concentration, varies with the substrate orientation on which the ZnO films were grown. The difference is attributed to the difference in dislocation density in the films produced as a result of lattice mismatch with the different sapphire orientations.     

微波辅助二次生长法合成SAPO-34分子筛膜与关键影响因素

采用微波辅助二次生长法在α-Al₂O₃载体上合成了SAPO-34分子筛膜，并将其应用于CO₂/CH₄分离。通过扫描电镜、X射线衍射和傅里叶变换红外光谱等表征方法，系统考察了加热方式、晶种粒径、老化时间和晶化时间对SAPO-34分子筛膜表面形貌和结构的影响。实验结果表明，以0.4 μm分子筛作为晶种，在老化24 h，然后微波加热晶化4 h后可制备出厚度约为1.5 μm的致密、无缺陷SAPO-34分子筛膜，其平均CO₂/CH₄分离因子和CO₂渗透率分别达到81和6.6×10^-7 mol·m^-2·s^-1·Pa^-1，制备方法可靠，重复性高。     

Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC(0 0 0 1) layers

Quasi-free-standing monolayer and bilayer graphene is grown on homoepitaxial layers of 4H-SiC. The SiC epilayers themselves are grown on the Si-face of nominally on-axis semi-insulating substrates using a conventional SiC hot-wall chemical vapor deposition reactor. The epilayers were confirmed to consist entirely of the 4H polytype by low temperature photoluminescence. The doping of the SiC epilayers may be modified allowing for graphene to be grown on a conducing substrate. Graphene growth was performed via thermal decomposition of the surface of the SiC epilayers under Si background pressure in order to achieve control on thickness uniformity over large area. Monolayer and bilayer samples were prepared through the conversion of a carbon buffer layer and monolayer graphene respectively using hydrogen intercalation process. Micro-Raman and reflectance mappings confirmed predominantly quasi-free-standing monolayer and bilayer graphene on samples grown under optimized growth conditions. Measurements of the Hall properties of Van der Pauw structures fabricated on these layers show high charge carrier mobility (>2000 cm²/Vs) and low carrier density (<0.9 × 10¹³ cm⁻²) in quasi-free-standing bilayer samples relative to monolayer samples. Also, bilayers on homoepitaxial layers are found to be superior in quality compared to bilayers grown directly on SI substrates.