脉冲电镀制备硅基细晶镍铁合金薄膜

应用脉冲电镀法在硅片上制备细晶粒镍铁合金薄膜,对电镀工艺参数与形成的沉积层的微观组织关系进行了探讨。通过改变脉冲电源的电参数来研究其对镀层结构和微观形貌的影响。运用扫描电子显微镜(SEM)和原子力显微镜(AFM)等实验手段对电镀层微观结构进行了观测与分析。研究表明,随着电流密度的增加与脉冲频率的加大,沉积层晶粒明显细化,致密度增大,使镀层质量得到很大的提高。     

双层膜椭偏数据处理的新算法

为了准确测量双层透明膜,有效地结合了模拟退火法和单纯形法的优点,提出一种模拟退火-单纯形混合算法来处理双层透明膜的椭偏数据。在单波长测量时,仅测量1组椭偏参量,可以求解双层透明膜任意两个参量;测量两组以上椭偏参量,可以同时反演双层透明膜4个参量,求解薄膜折射率和厚度精度分别达到0.0002和0.07nm。结果表明,模拟退火-单纯形混合算法反演双层透明膜参量是可行和可靠的,且有较强的样品适应性。该算法适合于单波长椭偏仪对双层及多层膜的反演及实际测量。     

p-偏振双面反射法测定偶氮染料掺杂PMMA薄膜光学参数

基于p-偏振光双面反射法,提出了一种新的测量单面涂膜不对称膜系光学参数的方法,理论上分析了反射光强比γ随膜层折射率、消光系数及膜厚变化的规律,实验上测量了两种不同入射方式下偶氮染料掺杂聚甲基丙烯酸甲脂（PMMA）薄膜反射光强比γ的角度调制曲线,通过数值模拟与结果修正,准确地获得了该薄膜的光学参数。实验结果与理论模拟符合得很好。     

Influence of the fabrication conditions of polymorphous silicon films on their structural, electrical and optical properties

The structural, optical, and photoelectric properties of polymorphous silicon films produced by plasma-enhanced chemical vapor deposition from a mixture of monosilane and hydrogen at high pressure are studied. Variations in the pressure of the gas mixture used for film production barely change the Raman spectra of the films, but induce changes in the photoconductivity and in the absorption spectrum obtained by the constant-photocurrent technique. The experimentally observed change in the optical and photoelectric parameters of the films is attributed to some structural changes induced in the films by variations in the deposition parameters.     

直流磁控反应溅射沉积ITO透明导电膜的研究

研究了用铟锡合金靶直流磁控反应溅射制备ＩＴＯ透明导电膜。介绍了膜的制备工艺和膜的特性，讨论了成膜过程和热处理对膜的电阻率和透光率的影响。     

脉冲激光沉积制备TiN/AlN多层薄膜及其工艺研究

本文采用脉冲激光沉积（PLD）法,在单晶硅试样表面上沉积制备了TiN/AlN多层硬质薄膜;研究了激光能量、靶衬距离和基体温度等工艺参数对薄膜性能的影响。采用X射线衍射（XRD）、扫描电子显微镜（SEM）和显微硬度仪方法研究了薄膜的性能。结果表明：薄膜由TiN和立方AlN细晶和无定型的非晶TiN、AlN组成,薄膜的调制周期尺寸均在λ=（50-200）nm范围内,多层结构界面清晰;当多层薄膜调制周期在100nm以下时,薄膜的显微硬度明显高于TiN和AlN的混合硬度值。     

溶胶-凝胶法制备AZO薄膜工艺参数的优化

采用正交设计法,对溶胶-凝胶方法制备AZO薄膜的工艺参数进行了优化研究,确定了最佳工艺参数,为制备AZO薄膜的工业化控制提供了一种可行的方法.     

Properties of zinc oxide films synthesized in low-temperature plasma discharge under conditions of bombardment with plasma components

Optical and structural properties of thin films of zinc oxide synthesized under the conditions of bombardment with components of a low-temperature plasma are studied. The films were synthesized on a cold substrate located at a distance from the target comparable to the free-path length of particles knocked from the target. The refractive index, optical band gap, and interlayer spacing for the films under study are determined. It is found that these parameters depend on the free-path length of the particles, controlled by pressure in the sputtering chamber. Consistent correlation is found between the films’ parameters and the bombardment intensity. A qualitative explanation of the phenomena observed is suggested; this explanation is based on an analysis of the energy conditions of the film’s synthesis.     

Fabrication of high quality Nb/AlOx-Al/Nb Josephsonjunctions. I. Sputtered Nb films for junction electrodes

The stress, surface morphology, superconducting characteristics, and crystal structure of sputtered Nb films were evaluated to judge their applicability to Josephson-junction electrodes. The film qualities were compared between Nb films deposited by DC and RF magnetron sputtering. The authors concluded that DC-sputtered Nb films are more suitable for junction electrodes and studied the relationship between their film quality and sputtering parameters. They observed that the Nb film characteristics were determined solely by the cathode voltage during sputtering regardless of the other parameters. The authors discuss the changes in film characteristics during Josephson integrated circuit processing     

应用高压高功率的微晶硅薄膜高速沉积

应用高压高功率(hphP)甚高频等离子增强化学气相沉积(VHF-PECVD)法对微晶硅(μc-Si:H)进行高速沉积,确定了hphP VHF-PECVD法沉积μc-Si:H的最优条件参数,在此参数下对hphP和低压低功率(IplP)两组样品沉积速率、光电导、暗电导及光敏性等性能参数进行测试,得到了1.58 nm的较高沉...     

制备条件对SnO_2／Si性质的影响

研究了沉积温度、ＳｎＣｌ４溶液的浓度、掺Ｐｄ等对ＳｎＯ２／Ｓｉ光电压的影响，测量了ＳｎＯ２／Ｓｉ的光电压谱，得出最佳的制备条件，进行了有关计算和分析。     

离子束溅射参数与Ta2O5薄膜特性的关联性

离子束溅射技术是制备Ta2O5薄膜的重要技术之一。采用正交试验设计方法,系统研究了Ta2O5薄膜的折射率、折射率非均匀性、消光系数、沉积速率和应力与工艺参数（基板温度、离子束压、离子束流和氧气流量）之间的关联性。通过使用分光光度计和椭圆偏振仪测量Ta2O5薄膜透过率光谱和反射椭偏特性,再利用全光谱反演计算的方法获得薄膜的折射率、折射率非均匀性、消光系数和物理厚度。Ta2O5薄膜的应力通过测量基底镀膜前后的表面变形量计算得到。实验结果表明:基板温度是影响Ta2O5薄膜特性的共性关键要素,其他工艺参数的选择与需求的薄膜特性相关。研究结果对于制备不同应用的Ta2O5薄膜制备工艺参数选择具有指导意义。     

Influence of the samarium impurity on the structure and surface morphology of Se<Subscript>95</Subscript>Te<Subscript>5</Subscript> chalcogenide glassy semiconductor

X-ray diffraction and atomic-force microscopy are used to study the structure and surface morphology of Se₉₅Te₅ chalcogenide glassy semiconductor films and the influence exerted on these films by doping with samarium. The parameters of the first sharp diffraction peak (FSDP), observed in X-ray diffraction patterns, are used to determine the numerical values of the local structure parameters, such as the “quasiperiod” of density fluctuations, correlation length [size of medium-range-order (MRO) regions], and nanovoid diameters. In addition, the numerical values of the roughness-amplitude parameters are determined. It is found that the disorder in the atomic structure and the irregularities on the surface of the films under study become more pronounced with increasing percentage content of the samarium impurity.     

Use of ellipsometry to characterize the surface of HgCdTe

Ellipsometry is a sensitive, rapid, and nondestructive optical technique for characterizing materials, especially surfaces and films. By measuring the change in the state of polarization of a light beam reflecting from the sample, one may infer certain characteristics of the sample. We present a review of the applications of ellipsometry to HgCdTe and related materials. The fundamentals of the technique are discussed briefly and the optical parameters at the wavelength 6328A for several materials of interest to infrared technology are listed. The emphasis of this paper is on the interpretation of the ellipsometric data, expressed in terms of the usual parameters Ψ and Δ obtained at a single wavelength. Methods and limitations of the analysis of single films, both nonabsorbing and absorbing, are discussed. Examples of an acceptance window for process monitoring are presented. The ellipsometric signatures of amorphous Te films and microroughness are described, along with a graphical method for interpreting the readings from very thin films. Spectroscopic applications and in situ monitoring of molecular beam epitaxial growth processes are briefly reviewed.     

The effect of electromagnetic fields on the process of formation of ultrathin Fe-Ni films during their deposition under a plasma-stimulated deposition

The effect of electromagnetic fields and a current flowing across the films during the growth process on their crystalline structure and electrical, magnetic, and galvanomagnetic properties is investigated. Under the optimal parameters of the deposition process, polycrystalline, magnetic, and conducting films of permalloy at least 1.7 nm thick are obtained. Two critical thicknesses of the films are established, at which the scattering mechanisms of the conduction electrons vary.     

离子束溅射制备氧化物薄膜沉积速率调整方法

采用正交试验设计方法,系统研究了离子束溅射HfO2、Ta2O5 和SiO2 薄膜的沉积速率与工艺参数（基板温度、离子束压、离子束流和氧气流量）之间的关联性。采用正交表L9（34）设计了9 组实验,采用时间监控的离子束溅射沉积方法,分别制备HfO2、Ta2O5 和SiO2 薄膜,并对三种薄膜的27 个样品采用椭圆偏振法测量并计算物理厚度,继而获得沉积速率。实验结果表明:对Ta2O5 和SiO2 薄膜沉积速率影响的工艺参数相同,影响权重从大到小依次为离子束流、离子束压、氧气流量和基板温度;对 HfO2 薄膜沉积速率影响的工艺参数按权重从大到小依次为离子束流、离子束压、基板温度和氧气流量。研究结果为调整HfO2、Ta2O5 和SiO2 薄膜沉积速率提供了依据。     

Effect of Duty Cycle on Properties of Pulse-electro-deposited SnS:Ag Thin Films

SnS∶Ag thin films were deposited on ITO glasses by pulse electro-deposition. By studying the effect of duty cycle on the properties of SnS∶Ag thin films, the optimum off-time(toff) is obtained to be 5 s, namely, the optimal duty cycle is about 67%. The primary phase of SnS∶Ag films deposited on optimum parameters condition is SnS compound with good crystallization, and the films prefer to grow towards (111) plane. The films are dense, smooth and uniform with good microstructure, and the grains in the films are densely packed together, and their direct bandgap is about 1.40 eV. In addition, the bandgap of the films first rises and then drops with the increase of the duty cycle.     

粗糙薄膜表面的原子力显微镜研究和多重分形分析

用一系列生成元模拟了具有不同特征的、与原子力显微镜图像相似的规则粗糙表面。详细讨论了规则粗糙表面多重分形谱参数的意义。并通过与方均根粗糙度（rms）和简单分形维数D0的比较，描述了多重分形分析的优点。最后用多重分形的方法分析了由AFM测量的ZnO薄膜和高聚物PtBuA薄膜的表面形貌。     

脉冲电泳沉积制备电致变色WO3薄膜

采用正交设计法优化了脉冲电泳沉积制备WO3薄膜的工艺参数,并通过分析薄膜的微观结构、透射光谱和循环伏安曲线等研究了最佳工艺条件下制备的WO3薄膜的电致变色性能.结果表明,脉冲电泳沉积制备WO3薄膜的最佳工艺参数为平均电流密度0.2×10-3A/cm2,沉积时间6 min,占空比75%,脉冲周期10 ms.最佳工艺条件下...     

Magnetron-assisted deposition of thin (SiC)1-x(AlN)x alloy films

The results of theoretical estimations of important parameters of the process of magnetron-assisted sputtering are reported. The parameters are the extent of the zone of thermalization of atoms and the distance from the target to the conditional anode. The method of magnetron-assisted sputtering of polycrys-talline SiC-AlN targets is applied to produce thin (SiC)_1-x(AlN)_x alloy films on SiC and Al₂O₃ substrates. The structure and composition of the films are studied by X-ray diffraction measurements and electron microscopy. The factors that control the composition and structure of the films and the conditions of formation of the single-crystal (SiC)_1-x(AlN)_x films on the SiC substrates are established.