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1.
Single crystal silicon samples were implanted at 140 keV by oxygen (16O+) ion beam to fluence levels of 1.0 × 1017, 2.5 × 1017 and 5.0 × 1017 cm−2 to synthesize buried silicon oxide insulating layers by SIMOX (separation by implanted oxygen) process at room temperature and at high temperature (325 °C). The structure and composition of the ion-beam synthesized buried silicon oxide layers were investigated by Fourier transform infrared (FTIR) and Rutherford backscattering spectroscopy (RBS) techniques. The FTIR spectra of implanted samples reveal absorption in the wavenumber range 1250-750 cm−1 corresponding to the stretching vibration of Si-O bonds indicating the formation of silicon oxide. The integrated absorption band intensity is found to increase with increase in the ion fluence. The absorption peak was rather board for 325 °C implanted sample. The FTIR studies show that the structures of ion-beam synthesized buried oxide layers are strongly dependent on total ion fluence. The RBS measurements show that the thickness of the buried oxide layer increases with increase in the oxygen fluence. However, the thickness of the top silicon layer was found to decrease with increase in the ion fluence. The total oxygen fluence estimated from the RBS data is found to be in good agreement with the implanted oxygen fluence. The high temperature implantation leads to increase in the concentration of the oxide formation compared to room temperature implantation.  相似文献   

2.
Germanium nanoparticles embedded in SiO2 matrix were prepared by atom beam sputtering on a p-type Si substrate. The as-deposited films were annealed at temperatures of 973 and 1073 K under Ar + H2 atmosphere. The as-deposited and annealed films were characterized by Raman, X-ray diffraction and Fourier transform infrared spectroscopy (FTIR). Rutherford backscattering spectrometry was used to quantify the concentration of Ge in the SiO2 matrix of the composite thin films. The formation of Ge nanoparticles were observed from the enhanced intensity of the Ge mode in the Raman spectra as a function of annealing, the appearance of Ge(3 1 1) peaks in the X-ray diffraction data and the Ge vibrational mode in the FTIR spectra. We have irradiated the films using 100 MeV Au8+ ions with a fluence of 1 × 1013 ions/cm2 and subsequently studied them by Raman and FTIR. The results are compared with the ones obtained by annealing.  相似文献   

3.
Nanophases of TiO2 are achieved by irradiating polycrystalline thin films of TiO2 by 100 MeV Au ion beam at varying fluence. The surface morphology of pristine and irradiated films is studied by atomic force microscopy (AFM). Phase of the film before and after irradiation is identified by glancing angle X-ray diffraction (GAXRD). The blue shift observed in UV-vis absorption edge of the irradiated films indicates nanostructure formation. Electron spin resonance (ESR) studies are carried out to identify defects created by the irradiation. The nanocrystallisation induced by SHI irradiation in polycrystalline thin films is studied.  相似文献   

4.
The synthesis of buried silicon nitride insulating layers was carried out by SIMNI (separation by implanted nitrogen) process using implantation of 140 keV nitrogen (14N+) ions at fluence of 1.0 × 1017, 2.5 × 1017 and 5.0 × 1017 cm−2 into 〈1 1 1〉 single crystal silicon substrates held at elevated temperature (410 °C). The structures of ion-beam synthesized buried silicon nitride layers were studied by X-ray diffraction (XRD) technique. The XRD studies reveal the formation of hexagonal silicon nitride (Si3N4) structure at all fluences. The concentration of the silicon nitride phase was found to be dependent on the ion fluence. The intensity and full width at half maximum (FWHM) of XRD peak were found to increase with increase in ion fluence. The Raman spectra for samples implanted with different ion fluences show crystalline silicon (c-Si) substrate peak at wavenumber 520 cm−1. The intensity of the silicon peak was found to decrease with increase in ion fluence.  相似文献   

5.
Modifications of the C70 molecule (fullerene) under swift heavy ion irradiation are investigated. C70 thin films were irradiated with 120 MeV Au ions at fluences from 1 × 1012 to 3 × 1013 ions/cm2. The energetic ion impacts lead to the destruction of the C70 molecule. To investigate the stability of C70 fullerene, the damage cross-section and radius of the damaged cylindrical zones are evaluated by fitting the evanescence of C70 vibration modes recorded by Raman spectroscopy. Conductivity measurements together with Raman and optical absorption studies revealed that an irradiation fluence of 3 × 1013 ions/cm2 results in complete amorphization of the carbon structure of the fullerene molecules.  相似文献   

6.
Silicon oxynitride (SixOyNz) layers were synthesized by implanting 16O2+ and 14N2+ 30 keV ions in 1:1 ratio with fluences ranging from 5 × 1016 to 1 × 1018 ions cm−2 into single crystal silicon at room temperature. Rapid thermal annealing (RTA) of the samples was carried out at different temperatures in nitrogen ambient for 5 min. The FTIR studies show that the structures of ion-beam synthesized oxynitride layers are strongly dependent on total ion-fluence and annealing temperature. It is found that the structures formed at lower ion fluences (∼1 × 1017 ions cm−2) are homogenous oxygen-rich silicon oxynitride. However, at higher fluence levels (∼1 × 1018 ions cm−2) formation of homogenous nitrogen rich silicon oxynitride is observed due to ion-beam induced surface sputtering effects. The Micro-Raman studies on 1173 K annealed samples show formation of partially amorphous oxygen and nitrogen rich silicon oxynitride structures with crystalline silicon beneath it for lower and higher ion fluences, respectively. The Ellipsometry studies on 1173 K annealed samples show an increase in the thickness of silicon oxynitride layer with increasing ion fluence. The refractive index of the ion-beam synthesized layers is found to be in the range 1.54-1.96.  相似文献   

7.
We have investigated the response of radiochromic films (MD-55 and HD-810) exposed to protons of 0.6 MeV. Each film is bombarded with a proton beam in an angular geometry, in such a way that the absorbed dose is related to angle. Depending on the energy and the angular fluence, the irradiated volume is total or partial. We compare the dose of these irradiated films with fully irradiated films exposed to γ radiation from a 60Co calibrated source.  相似文献   

8.
Thin films of Fe3O4 have been deposited on single crystal MgO(1 0 0) and Si(1 0 0) substrates using pulsed laser deposition. Films grown on MgO substrate are epitaxial with c-axis orientation whereas, films on Si substrate are highly 〈1 1 1〉 oriented. Film thicknesses are 150 nm. These films have been irradiated with 200 MeV Ag ions. We study the effect of the irradiation on structural and electrical transport properties of these films. The fluence value of irradiation has been varied in the range of 5 × 1010 ions/cm2 to 1 × 1012 ions/cm2. We compare the irradiation induced modifications on various physical properties between the c-axis oriented epitaxial film and non epitaxial but 〈1 1 1〉 oriented film. The pristine film on Si substrate shows Verwey transition (TV) close to 125 K, which is higher than generally observed in single crystals (121 K). After the irradiation with the 5 × 1010 ions/cm2 fluence value, TV shifts to 122 K, closer to the single crystal value. However, with the higher fluence (1 × 1012 ions/cm2) irradiation, TV again shifts to 125 K.  相似文献   

9.
Al2O3 thin films find wide applications in optoelectronics, sensors, tribology etc. In the present work, Al2O3 films prepared by electron beam evaporation technique are irradiated with 100 MeV swift Si7+ ions for the fluence in the range 1 × 1012 to 1 × 1013 ions cm−2 and the structural properties are studied by glancing angle X-ray diffraction. It shows a single diffraction peak at 38.2° which indicates the γ-phase of Al2O3. Further, it is observed that as the fluence increases up to 1 × 1013 ions cm−2 the diffraction peak intensity decreases indicating amorphization. Surface morphology studies by atomic force microscopy show mean surface roughness of 34.73 nm and it decreases with increase in ion fluence. A strong photoluminescence (PL) emission with peak at 442 nm along with shoulder at 420 nm is observed when the samples are excited with 326 nm light. The PL emission is found to increase with increase in ion fluence and the results are discussed in detail.  相似文献   

10.
NiO thin films grown on Si(1 0 0) substrate by electron beam evaporation and sintered at 500 and 700 °C were irradiated with 120 MeV Au9+ ions. The FCC structure of the sintered films was retained up to the highest fluence (3 × 1013 ions cm−2) of irradiation. In the low fluence (?1 × 1013 ions cm−2) regime however, the evolution of the XRD pattern with fluence showed a wide variation, critically depending upon their initial microstructure. Though irradiation is known to induce disorder in the structure, we observe improvement in crystallization and texturing at intermediate fluences of irradiation.  相似文献   

11.
X-ray diffraction (XRD), attenuated total reflection-Fourier transform infrared spectroscopy (ATR-FTIR) and photoluminescence (PL) were applied to study yellow and red luminescence properties of as-grown and Mg-implanted n-type wurtzite GaN films grown on sapphire substrates by metal-organic chemical vapor deposition. The influence of different Mg-implanted fluences on yellow and red luminescence was studied. The as-grown GaN thin films exhibited intense broad yellow emission which reduces drastically after Mg ion implantation. A red luminescence band at approximately 750 nm appears when the Mg implantation fluence is low (1013 cm−2) whereas a yellow luminescence band suddenly increases at a Mg-implanted fluence of 1016 cm−2. The possible reasons of these phenomena are discussed.  相似文献   

12.
We have studied electronic and atomic structure modifications of Cu3N films under 100 keV Ne and 100 MeV Xe ion impact. Cu3N films were prepared on R(11-2 surface)-cut-Al2O3 substrates at 250 °C by using a RF-magnetron sputter deposition method. X-ray diffraction (XRD) shows that unirradiated films are polycrystalline with (1 0 0) orientation of cubic structure. We find that the electrical resistivity (∼10 Ω cm before ion impact) decreases by more than two orders of magnitude after the Ne impact at a fluence of ∼1013 cm−2, where no Cu phase separation is observed. For further ion impact (larger than ∼1015 cm−2), XRD shows Cu diffraction peak (Cu phase separation), and the resistivity decreases further (three orders of magnitude). Decomposition and phase separation are discussed based on these results, as well as temperature dependence of the resistivity and optical absorption. The results of 100 MeV Xe ion impact are compared with those of Ne ion impact.  相似文献   

13.
Ge oxide films were irradiated with 150 MeV Ag ions at fluences varying between 1012 and 1014 ions/cm2. The irradiation-induced changes were monitored by FT-IR spectroscopy, atomic force microscopy, X-ray diffraction and photoluminescence spectroscopy. The FT-IR spectra indicate stoichiometric changes and an increase in Ge content on irradiation. X-ray diffraction shows a crystallization of the irradiated films and presence of both Ge and GeO2 phases. The Ge nanocrystal size, as calculated from Scherrer’s formula, was around 30 nm. The morphological changes, observed in atomic force microscopy, also indicate formation of nanostructures upon ion irradiation and a uniform growth is observed for a fluence of 1 × 1014 ions/cm2.  相似文献   

14.
Optical methods can provide important insights into the mechanisms and consequences of ion beam interactions with solids. This is illustrated by four distinctly different systems.X- and Y-cut LiNbO3 crystals implanted with 8 MeV Au3+ ions with a fluence of 1 × 1017 ions/cm2 result in gold nanoparticle formation during high temperature annealing. Optical extinction curves simulated by the Mie theory provide the average nanoparticle sizes. TEM studies are in reasonable agreement and confirm a near-spherical nanoparticle shape but with surface facets. Large temperature differences in the nanoparticle creation in the X- and Y-cut crystals are explained by recrystallisation of the initially amorphised regions so as to recreate the prior crystal structure and to result in anisotropic diffusion of the implanted gold.Defect formation in alkali halides using ion beam irradiation has provided new information. Radiation-hard CsI crystals bombarded with 1 MeV protons at 300 K successfully produce F-type centres and V-centres having the structure as identified by optical absorption and Raman studies. The results are discussed in relation to the formation of interstitial iodine aggregates of various types in alkali iodides. Depth profiling of and aggregates created in RbI bombarded with 13.6 MeV/A argon ions at 300 K is discussed.The recrystallisation of an amorphous silicon layer created in crystalline silicon bombarded with 100 keV carbon ions with a fluence of 5 × 1017 ions/cm2 during subsequent high temperature annealing is studied by Raman and Brillouin light scattering.Irradiation of tin-doped indium oxide (ITO) films with 1 MeV protons with fluences from 1 × 1015 to 250 × 1015 ions/cm−2 induces visible darkening over a broad spectral region that shows three stages of development. This is attributed to the formation of defect clusters by a model of defect growth and also high fluence optical absorption studies. X-ray diffraction studies show evidence of a strained lattice after the proton bombardment and recovery after long period storage. The effects are attributed to the annealing of the defects produced.  相似文献   

15.
Swift heavy ion irradiation has been successfully used to modify the structural, optical, and gas sensing properties of SnO2 thin films. The SnO2 thin films prepared by sol-gel process were irradiated with 75 MeV Ni+ beam at fluences ranging from 1 × 1011 ion/cm2 to 3 × 1013 ion/cm2. Structural characterization with glancing angle X-ray diffraction shows an enhancement of crystallinity and systematic change of stress in the SnO2 lattice up to a threshold value of 1 × 1013 ions/cm2, but decrease in crystallinity at highest fluence of 3 × 1013 ions/cm2. Microstructure investigation of the irradiated films by transmission electron microscopy supports the XRD observations. Optical properties studied by absorption and PL spectroscopies reveal a red shift of the band gap from 3.75 eV to 3.1 eV, and a broad yellow luminescence, respectively, with increase in ion fluence. Gas response of the irradiated SnO2 films shows increase of resistance on exposure to ammonia (NH3), indicating p-type conductivity resulting from ion irradiation.  相似文献   

16.
In this study, we performed irradiation experiments on nanostructured 3C-SiC samples, with 95 MeV Xe ions at room temperature. This energy permits the observation of the combined electronic and nuclear interactions with matter. The grazing incidence X-ray diffraction results do not reveal a complete amorphization, despite value of displacement per atom overcoming the total amorphization threshold. This may be attributed to competing effects between nuclear and electronic energy loss in this material since a total amorphization induced by nuclear interactions was found after low energy ion irradiation (4 MeV Au). Moreover, electronic interactions created by high energy ion irradiations induce no disorder in single crystalline 6H-SiC. But in samples previously disordered by low energy ion implantation (700 keV I), the electronic interactions generate a strong defects recovery.  相似文献   

17.
The interaction of 72 keV Au400 ions (with a diameter of approximately 2 nm) with nanodispersed gold targets has been studied. These interactions are dominated by elastic collisions. The gold nanodispersed target with 2-12 nm nanoislets was bombarded with a fluence of 1.7 × 1012 ions/cm2. The desorbed nanoclusters were collected on carbon foils supported by TEM-grids. Intact 29 nm gold nanoclusters were found on the collectors. The desorption yield (normalized to the total cross-section of the projectile-cluster interaction) was estimated to be 0.62 nanocluster/projectile. Preliminary estimates were made using molecular dynamic simulations for comparison with the experimental results.  相似文献   

18.
Low temperature silicon dioxide layers (LTO), deposited on crystalline silicon substrates, and thermally densified at 750 °C for 90 min or 900 °C for 30 min, jointly with thermally grown silicon dioxide layers, were irradiated with low fluence 11 MeV Ti ions. A selective chemical etch of the latent tracks generated by the passage of swift ions was performed by wet or vapour HF solution. The wet process produced conically shaped holes, while the vapour procedure generated almost cylindrical nanopores. In both cases thermal SiO2 showed a lower track etching velocity Vt, but with increasing the densification temperature of the LTO samples, the Vt differences reduced. LTO proved to be suitable for wet and vapour ion track formation, and, as expected, for higher densification temperatures, its etching behaviour approached that of thermal silicon dioxide.  相似文献   

19.
A study of the effects of ion irradiation on the surface mechanical behavior and shrinkage of organic/inorganic modified silicate thin films was performed. The films were synthesized by sol-gel processing from tetraethylorthosilicate (TEOS) and methyltriethoxysilane (MTES) precursors and spin-coated onto Si substrates. The sol viscosity and the spin velocity were adjusted so that the films produced had a final thickness ranging from 580 to 710 nm after heat treatment. The ion species and incident energies used were selected such that the projected ion range was greater than the film thickness, resulting in fully irradiated films. After heat treatment at 300 °C for 10 min, the films were irradiated with 125 keV H+, 250 keV N2+ and 2 MeV Cu+ ions with fluences ranging from 1 × 1014 to 1 × 1016 ions/cm2. Both hardness and reduced elastic modulus were seen to exhibit a monotonic increase with fluence for all three ion species. Also, H loss was found to increase monotonically with increase in fluence, while the film thickness was found to decrease with increase in fluence.  相似文献   

20.
Magnetic nanoparticles embedded in polymer matrices have excellent potential for electromagnetic device applications like electromagnetic interference suppression, etc. The NiO nanoparticles were synthesized by simple method. These nanoparticles were dispersed in PMMA matrix and films were prepared by casting method with varying concentrations of nickel oxide nanoparticles. These films were irradiated with 50 MeV Li+3 ions at a fluence of 5 × 1012 ions/cm2. AC electrical properties of pristine and irradiated samples were studied in wide frequency range. Dependence of dielectric properties on frequency, ion beam fluence and filler concentration was studied. The results reveal the enhancement in dielectric properties after doping nanoparticles and also upon irradiation, which is also corroborated with field-cooled-zero-field-cooled (FC-ZFC) susceptibility measurement in which magnetization is increased upon irradiation. The Fourier transform infrared (FTIR) spectroscopy analysis revealed the change in the intensity of functional groups after irradiation. Average surface roughness observed to change with filler concentration and also with the irradiation fluence as obtained from AFM analysis.  相似文献   

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