基于FPGA的移相正弦信号发生器的设计

正弦信号发生器作为最基本的电子设备,广泛应用于航空航天控制、通信、电子测量、研究等等。本文介绍了基于FPGA技术,根据正弦信号移相原理,利用matlab/simlink/DSP Builder搭建移相正弦信号模型,采用直接数字频率合成技术(DDS),设计实现了一个频率、相位可控的正弦信号发生器。采用此方法设计的数控移相正弦信号发生器能够产生频率、相位均可数字式预置并可调节的正弦波信号,该数字移相信号发生器的频率、相位、幅度均可预置,分辨率高,精确可调,且可分别用作两路独立的信号发生器使用。采用这种方法设计可控移相信号发生器方便快捷,提高了开发效率,缩短研发周期,而且系统的调试方便,容易修改。     

基于DSP正弦信号发生器设计

提出了一种基于TMS320C5402实现正弦信号发生器的设计原理与方法,介绍了所设计的正弦信号发生器硬件电路结构和软件程序流程图。结合DSP硬件特性,通过使用泰勒级数展开法得到设定参数的正弦波形输出,达到设计目的。该信号发生器弥补了通常信号发生器模式固定,波形不可编程的缺点,其具有实时性强,波形精度高,可方便调节频率和幅度、稳定性好等优点。     

基于DDS的正弦信号发生器的设计

文章介绍了一种基于DDS的正弦信号发生器的设计方法,对此正弦信号发生器的硬件部分进行了详细的论述,并给出了系统的软件流程框图.仿真及硬件验证的结果表明,此正弦信号发生器精度高,抗干扰性好,可作为一般的正弦信号发生器使用.此设计方案具有一定的实用性.     

基于DDS技术正弦信号发生器的设计

为了能够方便地产生波形平滑、频率稳定的正弦信号波形,提出了一种基于DDS技术的正弦信号发生器的设计方法。介绍了DDS技术在波形产生功能电路中的应用,并对FPGA实现DDS功能做了具体的说明。介绍了DDS技术的基本原理,论述了基于FPGA实现正弦/余弦信号发生器和32位序列信号发生器的设计方案。最后,实验结果表明:采用该方法设计的正弦波形发生器输出的波形与传统的正弦波形发生器相比,具有波形平滑、波形稳定度高、频率稳定度和分辨率高等诸多优点。     

基于DSP的正弦信号发生器设计

介绍了一种用TMS320LF2407 DSP来实现正弦信号发生器的设计原理和实现方法，给出了此信号发生器的硬件电路结构和软件流程图。该信号发生器的正弦信号幅值、电压和频率均可通过DSP内的程序来控制，而且使用方便。相对于传统信号发生器具有更好的灵活度和更好的性能。     

基于ML2035低频正弦信号发生器的设计

在电子和通信产品中往往需要高精度的正弦信号,而传统的正弦信号发生器在输出低频时往往频率稳定度和精度等指标都不高。而Micro Linear公司的ML2035是一款运用直接数字合成技术(DDS)研制的正弦信号发生器,它可以在几乎不需要外部微处理器和其他外围器件的条件下,产生从0~25 kHz的正弦信号,通过外接晶振作为时钟输入,通过74LS20产生16位频率控制字来控制ML2035的频率输出。因此利用此芯片设计了100 Hz低频正弦信号发生器电路,可以简化设计,提高正弦信号的精度和稳定度。     

一种用于光学条纹相机的种子源设计

介绍了一种基于锁相环及频率合成方法产生高重复频率正弦同步扫描种子源产生技术。利用锁相环实现了正弦信号与触发光脉冲的同步跟踪, 并通过频率合成实现对正弦小信号的频率、相位、幅度的调制。调制相位可实现扫描时间的延迟, 调节振幅可实现不同扫描速度。电路系统进行了实验测试, 获得频率可达250 MHz、时间抖动小于10 ps的稳定正弦同步扫描种子源, 证明设计达到了预期目标, 满足光学条纹相机对种子源频率、幅度、抖动的高精度需求。     

基于PE3336设计2．4GHz信号源发生器

在无线通信系统的开发中2.4GHz是应用最为广泛的一种频段,由于DDS频率合成器急待解决输出频率上限的提高和寄生输出的抑制技术难题,对于频率较高的高质量信号源发生器目前往往只能基于PLL(锁相环)来实现。文章简要介绍了3.0GHz整数分频集成锁相环PE3336的原理,详细介绍了基于该芯片设计一个高精度、低杂散的2.4GHz信号发生器;并介绍了电磁兼容性考虑的重要性和实施方法。     

基于FPGA的DDS实现

文中所设计的正弦信号发生器电路是采用现场可编程门阵列（FPGA）实现的一个数字频率合成器。其主要由相位累加器、加法器、波形存储器等组成。实验所设计出的DDS具有变频范围广、频率步进小和频率精度高、频率和相位可调等特点,而且其最后输出的正弦信号频率高,可以达到12．5MHz。     

一种基于DDS的幅值可调信号发生器的设计

提出了一种基于DDS(Direct Digital Synthesize)AD9850的频率、相位、幅值均可调节的正弦信号发生器.该正弦信号发生器采用AT89S52单片机为控制器,D/A转换器TLC5615与乘法器AD534相结合,实现输出正弦信号幅值可控,采用AD811控制输出正弦信号电压幅值,产生50 Hz～3 kHz频段的正弦波,步进频率为50 Hz.该信号发生器可应用在交变磁场测量仪和试验仪器、工程设计的函数发生器中.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.