低频唤醒式电厂高压开关柜触头温度监测系统设计

针对无线式电厂开关柜温度监测系统中的传感器组网问题,采用Atmel超低功耗低频唤醒信号发送芯片ATA5276和低频唤醒接收芯片ATA5283实现125 k Hz的低频唤醒功能,设计了一种采用无线电进行数据传输的非接触检测电路,给出了系统的硬件电路设计和软件设计方法。     

远程防盗汽车PKE系统设计

针对目前汽车PKE系统无远程防盗功能的问题,提出了一种基于STC单片机的具有远程防盗功能的汽车PKE系统设计方案。设计了钥匙模块的高频发射与低频唤醒接收电路,车载模块的高频接收与低频发射电路,以及车栽模块与GSM模块的通信连接。分析了滚动码加解密过程以及钥匙模块与车载模块之间的通信协议。此设计方案完善了PKE防盗功能,能够满足实际应用中的防盗和通信要求。     

德州仪器针对金属及恶劣环境下的资产可视化应用推出两款低频RFID产品

近期，德州仪器（TI）宣布推出12毫米多用途楔形应答器及24毫米低频圆形电子标签，进一步扩大了其低频产品系列阵营。12毫米多用途楔形应答器对芯片电路进行了改进，可直接安装于金属上；而24毫米低频圆形电子标签则采用TI专利调谐工艺制造而成，可提升废物处理及工业生产等应用的读写一致性。自上世纪80年代晚期以来，134．2kHz低频RFID技术就用于从牲畜到汽车零部件等任何物体的识别。目前，     

用于轮胎压力监测系统中的低频唤醒技术的实现方法

提出了利用ATA5283和ATA5275实现汽车轮胎压力监视系统（TPMS）的关键技术———低频唤醒功能技术的方案。设计了其发射模块,接收模块和轮胎自动定位模块的电路,并通过测试说明了此方法在节能及轮胎重新定位问题上的优势。因此,在汽车安全行驶领域具有重要意义。     

一种低频RFID读卡器的实用前端系统设计

针对目前低频RFID读卡器常用的专用射频前端存在适用协议单一,难以大幅降低成本的问题,设计了一种实用的低成本前端系统。通过采用差分载波天线驱动技术,以及0.35μm CMOS工艺的二级运放,实现了对电子标签的数据接收与写入功能。仿真与实测结果表明,系统与电子标签的可靠数据传输距离达到6 cm,成本低廉,能够满足实际应用的需要。     

可唤醒的无线传感器网络的雨量节点的设计

通过软硬件结合的方式,实现以MSP430作为主芯片的可唤醒的无线传感器网络的雨量节点。设计以低功耗为前提,主要由MSP430F149、AT86RF212、ATA5282以及SL3型翻斗雨量传感器处理电路组成,利用DXP2004软件设计制作PCB板。传感器节点采用低频可唤醒芯片ATA5282地接收来自汇聚节点的低频唤醒信号,接收到正确信号时采集雨量数据并打包发送回汇聚节点。实验结果证明该雨量节点传输距离远、功耗低并且丢包率低。     

距离可调双频电子标签低频模块设计与实现

在射频识别技术的基础上提出了一种识读距离可调的远距离双频电子标签的实现方案,根据低频磁通信的原理设计了125kHz发射模块和接收模块.在低频发射模块中,通过调节变阻器Rw来调节放大器的增益,控制天线的辐射功率,进而控制通信距离;在低频接收模块中,由ISL28190低噪声精密运算放大器对接收信号进行放大,增益可达40dB.这两个模块可实现在5米的距离上接收天线输出峰-峰值达5mV的信号,经ISL28190放大后为500mV.     

低功耗RFID电源产生电路的优化设计

电子标签是创新消费模式、提升生活质量和工作效率的热门新科技,但是由于功耗和成本的原因阻碍了其广泛应用.介绍了一种电子标签芯片电源产生电路的优化设计,探讨了限幅电路、整流电路、模拟电源电路、数字电源电路和EEPROM高压电路的低功耗设计技术和实现方法,提出了融合并联分流的限幅电路、改进的桥式整流电路、带有低压检测复位功能的模拟电源电路.低功耗电源产生电路已成功应用到无源电子标签芯片的设计中,并在SMIC O.35μmCMOS工艺下流片成功.     

基于nRF24LE1的有源RFID电子标签的设计简

本文提出了一种基于nRF24LEl射频芯片和RFX2401C功率扩展芯片的有源RFID电子标签的设计,包括硬件电路设计和软件编程设计。该电子标签工作在2．4GHzlSM频段,通过功率扩展芯片RFX2401C提高了标签的发射功率和接收灵敏度,利用接收功率检波（RPD）实现载波监听,解决多标签的碰撞问题,采用无线唤醒技术有效降低了系统的功耗,利用电源监管功能提高工作稳定性。测试结果表明：该标签抗干扰能力强,传输稳定,工作距离远且可调。     

电力线载波通信的外围电路设计

低压电力线传输特性的复杂性和传输过程中干扰信号的多变性,使其推广受到限制。文中依据高低频电路原理,结合现代通信与数字信号处理技术,设计了电力线载波通信的外围专用电路,包括发送驱动电路、耦合接收和AGC系统等,较好地解决了载波信号的接收与发送问题。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.