一种最优去噪线性相位滤波器组的FPGA实现

格型结构是一种可以快速高效设计过采样线性相位完全重建滤波器组的方法。一旦分析滤波器组设定后,对应的综合滤波器结构也就确定,但综合滤波器组参数却有很大的灵活性,从中可以找出具有最优去噪效果的综合滤波器组,构成一个完整的滤波器组。对于求解出的具有最优去噪效果的过采样线性相位完全重构滤波器组,文中用DSP Builder在FPGA上予以实现,并用modelsim进行功能仿真。     

无乘法的线性相位滤波器组的优化设计

提出了一种新的优化方法来设计系数为2的幂和(SOPOT)形式的线性相位完全重构(LPPR)滤波器组。其基本思想是将LPPR格型结构滤波器组中的格型系数直接表示成SOPOT形式，并将这些系数编码成个二进制码串，然后在一定的目标函数下利用遗传算法对这二进制码串进行优化。利用这种方法可以省去传统方法中首先设计无限精度系数的步骤，简化SOPOT型系数的LPPR滤波器组的设计过程。实验结果表明，该方法可以得到较好设计结果。     

线性完全重构的二维滤波器组的Groebner基设计

为设计线性完全重构的二维滤波器组,引用了计算代数中的Groebner基方法,根据线性相位条件和完全重构条件,分别设计出二维滤波器组的分析滤波器和综合滤波器的多相元矩阵,给出其参数化形式。根据小波构造理论,利用所设计的分析滤波器组构造出一个对称的纯二维小波。设计结果显示了Groebner基方法的有效性,设计方法更为简单。     

任意长度线性相位余弦调制滤波器组的快速实现

本文研究任意长度线性相位余弦调制滤波器组的快速实现,利用其原型滤波器的对称性,得到了一种更为有效的实现结构,与传统实现不同,新的实现结构使用２ ×２ 无损格型滤波器代替２ ×１ 无损格型滤波器,而格型滤波器的个数减少了一半,由此有效地降低了滤波器组的实现复杂度     

线性相位二维跳耦型数字滤波器组设计及其在图像子带编码中的应用

本文提出了一种新的二维递归数字滤波器组－二维跳耦型数字滤波器组的设计与实现方法。这种数字滤波器组的特点为：因果型－可用于实时图像分解与重构；线性相位－可避免传统的二维ＩＩＲ滤波引起的图像的相位畸变，非线性条件下稳定－有限字长实现二维数字滤波器组时，不存在溢出或极限环振荡，实际的图像处理实验证明，本文提出的设计理论及实现方法是正确的，有效的，可行的。     

线性相位余弦调制滤波器组研究

图像子带编码要求滤波器组具有线性相位特性，非线性相位特性可对图像编译码带来影响。现研究了一种具有线性相位的最大抽取FIR余弦调制滤波器组，该滤波器组中每一个滤波器都具有线性相位，且由原型滤波器经余弦序列调制得到。经推导这种滤波器组可以设计成具有近似准确重构（NPR）特性或准确重构（PR）特性，文中分别给出了两种情况下滤波器组应满足的条件。通过对一幅图像的二维可分离滤波实验说明了当原型滤波器满足一定条件时滤波器组是准确重构的。     

一类冗余比为2的二维DFT调制滤波器组的设计

本文构建了一类冗余比为2的二维线性相位的双原型离散傅立叶变换（DFT）调制滤波器组。利用原型滤波器的多相位分解,推导出了该滤波器组的完全重构(PR)条件。基于该PR条件,我们将滤波器组的设计归结为一个关于原型滤波器的多相位分量的无约束优化问题。由于原型滤波器是线性相位的,多相位分量之间具有一定的关系,因此我们可以简化该优化问题。仿真结果验证了滤波器组PR条件的正确性。同时,仿真表明了优化算法的有效性,设计所得的滤波器组重构误差很小、频率特性较好,基本满足实际应用的需要。      

FIR完全重建滤波器组构造双正交小波基

本文论述了由双正交完全重建滤波器组构造高度正则的双正交小波基的充分条件和构造方法，系统地研究了双正交线性相位ＦＩＲ完全重建滤波器组的解的结构和已知Ｈ０（ｚ）构造完全重建滤波器组的方法，并且实现了用单一的传递函数Ａ（ｚ）构造线性相位ＦＩＲ双正交完全重建滤波器组的设计方法。这种方法的突出优点是滤波器组分析、合成部分中的滤波器可以用数值优化的方法使两者同时逼近理想低通滤波器和理想高通滤波器，即具有良好的频率选择性，并且所有滤波器都具有线性相位的特点。该滤波器组具有良好的梯形实现结构。在具体的滤波器设计中提出了基于均方误差最小准则的特征滤波器的设计方法和基于误差最大值最小准则的Ｒｅｍｅｚ交换法。而且上述方法设计的滤波器组可以构造出具有高度正则性的光滑的双正交小波基。     

FIR数字滤波器的简化格型实现

格型滤波器在数值计算性能和结构的模块化等方面都优于直接型,但实现起来较复杂。本文提出一种实现PIR数字滤波器的简化格型结构,它所需的硬件设备量只有常规格型实现时的一半,与直接型实现时相当。文中给出了从直接型到简化格型的综合算法。并对线性相位FIR数字滤波器的格型综合算法作了简化。用实例演示了本文的主要结论。     

线性相位FIR滤波器频域特性的教学探索

线性相位FIR滤波器的频域特性分析是"数字信号处理"课程中的一个重要内容。本文给出了一种与传统教材不同的线性相位FIR滤波器频率响应的分析方法。笔者以Ⅰ型线性相位系统的频率响应为基础,证明了Ⅱ型、Ⅲ型和Ⅳ型线性相位FIR滤波器的频率响应可表示为Ⅰ型线性相位系统的频率响应与简单函数的乘积。该方法特点是分析过程简捷,突出了不同类型线性相位FIR滤波器频域特性,便于学生掌握线性相位FIR滤波器频域特性。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.