双束（H+/e-）辐照下氢对12Cr-ODS铁素体钢组织损伤影响研究

利用氢离子（H⁺）束和电子（e^-）束双束（H⁺/e^-）同时辐照用化学浸润法制备的新型12Cr-ODS铁素体钢,研究其辐照损伤效应及组织变化。实验结果表明：由于氧化物的钉扎,基体内保持低密度位错网络;辐照初期随辐照剂量的增加,缺陷团在位错线上及其周围形成,尺寸增加,密度不断增大,并形成间隙型位错环;不同温度下辐照均产生小尺寸高密度的空洞,随辐照剂量的增大,空洞长大速度降低,空洞密度缓慢减小;不同温度下,辐照剂量达15dpa时,空洞肿胀均小于0.15%。对辐照产生的点缺陷与氢相互作用进行理论分析,12Cr-ODS铁素体钢在623~823K经双束辐照后,表现出良好的抗辐照损伤性。     

双束强辐照对氧化物弥散强化铁素体型合金强化相稳定性影响

采用双束复合辐照装置,研究了He存在条件下,强辐照对长期时效后的ODS合金中强化相(Y2O3)的稳定性和辐照损伤特征的影响。实验结果表明:双束强辐照下,ODS合金中强化相不稳定,发生聚集长大并造成附近基体中Ti、Y浓度增高,导致空洞尺寸和空洞肿胀增加,并对这一结果从理论上进行解释。     

双束同时辐照低活性Fe-Cr-Mn(W、V)合金微观组织损伤的影响

研究了时效热处理低活性Fe Cr Mn(W、V)钢双束同时辐照损伤行为 ,结果表明 :92 3K/ 3 0 0 0h时效合金 ,经单独电子辐照 (1 0a- 1)出现低密度空洞 ,而经双束同时辐照的时效合金 ,在辐照初期就形成间隙型位错环和微小空洞。与无时效合金相比 ,随时效温度增加 ,空洞尺寸、空洞密度和空洞肿胀量增大。随时效温度的提高碳化物析出数量增多 ,奥氏体中合金元素Cr、Mn、W、V降低 ,He的存在有效地促进空洞肿胀量增大。     

氦对Fe-Cr-Ni合金和Fe-Cr-Mn合金辐照损伤的影响

利用超高压电镜与高能离子加速器连接装置 ,研究了氦 (He)对Fe Cr Ni和Fe Cr Mn两类奥氏体型合金辐照损伤行为的影响。观察了辐照过程中二次点缺陷的演变、空洞的形成以及辐照诱导晶界处溶质元素浓度的变化。实验结果表明 :He能促进两类合金空洞核心的增加 ,但空洞尺寸和密度不同 ;He能有效抑制辐照诱起晶界元素偏析 ,但对不同原子尺寸的溶质原子抑制效果不同。该差别是由于He的注入提高空位移动激活能和改变点缺陷与溶质原子相互作用的效果     

强流脉冲电子束辐照诱发的AISI 304奥氏体不锈钢中的空位簇缺陷

利用强流脉冲电子束技术对AISI 304奥氏体不锈钢进行辐照处理,采用透射电子显微镜详细地分析了辐照诱发的空位簇缺陷结构.1次辐照未产生空位簇缺陷结构;5、10次辐照后诱发大量的空位簇缺陷结构,缺陷尺寸通常小于10 nm,随辐照次数增加,缺陷簇数量明显增加,但尺寸增加不明显;小缺陷簇主要由空位型位错圈和少量的堆垛层错四面体(SFT,stacking fault tetrahedral)组成,SFT占整个缺陷簇的比例低于1%;少量的孔洞缺陷在孪晶片附近出现.10次辐照后,孪晶片前沿或附近形成大量的大尺寸SFT,其最大尺寸可达250 nm,这些大尺寸SFT的形成机制与小尺寸SFT的有所不同,通过1/3<111>位错攀移在孪晶片前沿和孪晶界上的台阶处形成的压杆位错核心吸收周围丰富的空位而长大可能是大尺寸SFT形成的原因.     

200 keV Xe离子辐照后国产T92钢微结构变化研究

对国产T92钢进行200keV的Xe离子辐照试验,使用透射电子显微镜(TEM)考察该能量下不同辐照损伤剂量对其微观结构的影响,研究结果表明:T92钢典型的微观组织结构主要包括马氏体板条结构,碳、氮化合物颗粒和位错网络;辐照导致M23C6颗粒出现非晶化,且随着辐照损伤剂量的增加,非晶化越来越明显;辐照损伤剂量较小(1.4dpa和6.8dpa)时,辐照试样中出现黑斑结构(空位和间隙原子簇),所有的辐照试样中没有发现辐照产生的位错环和空洞。     

双束(H~+/e~-)同时辐照对12Cr-ODS钢氧化物稳定性影响

利用氢离子和电子双束(H~+/e~-)对用化学浸润法制备的新型12cr-ODS铁素体钢进行辐照,研究了辐照对12Cr-ODS钢氧化物稳定性的影响.对不同辐照剂量下原位观察辐照区内氧化物形貌的变化过程发现:辐照前和15 dpa辐照后,约10～20nm氧化物的尺寸并没有明显变化,而氧化物周围出现微小高密度空洞并没有影响氧化物的稳定性;当辐照温度升高至823 K时,大尺寸的氧化物Y_2O_3与基体的相界面变得不规则,但氧化物颗粒尺寸并不发生明显变化.实验结果表明:弥散强化相Y_2O_3尺寸稳定,无明显溶解现象.     

RAFM钢中H+辐照空位型缺陷的慢正电子束研究

为研究低活化铁素体/马氏体(Reduced Activation Ferritic/Martensitic,RAFM)钢的辐照损伤机理,利用慢正电子技术研究了H~+辐照RAFM钢时所产生的空位型缺陷及其对于材料微观结构的影响。H~+能量和剂量分别为100 keV和1×10~(15)cm~(-2)、1×10~(16) cm~(-2)、1×10~(17)cm~(-2)。慢正电子束多普勒展宽测量结果可得,S参数随着剂量的增大而增大,W参数呈现正相反的趋势。样品中主要辐照区域为142～348 nm,此范围内有大量缺陷产生,辐照产生的主要为空位型缺陷,其中多为氢-空位复合体缺陷,辐照缺陷的浓度随着H~+剂量的增大而增加。空位型缺陷的尺寸大小也随着辐照剂量的增大而有所变化,辐照剂量达到10~(17)cm~(-2)时,S-W曲线斜率发生变化,故辐照缺陷类型发生明显变化,有较大尺寸的缺陷产生。     

辐照过程中间隙环形成的Fokker—Planck方程解

空洞和间隙环的形成,是辐照过程中材料微观结构演变的基本问题。本文给出了间隙环形成的Fokker-Planck方程解。该解表征了辐照过程中不同尺寸的间隙环随时间形成的主要特征。对于316不锈钢,计算值与实验值一致。该方法能快速,精确地算出高剂量下的大尺寸间隙环浓度。     

He+离子辐照Inconel 718合金表面形貌改变及机理研究

研究了3种不同剂量He⁺离子辐照后Inconel 718合金的形貌变化规律及其形成机理。结果表明,He⁺离子辐照会在合金表面形成纳米多孔结构,其孔径会随辐照剂量的增加而增大。此外,He⁺离子辐照还会破坏合金表面δ相并导致碳化物的持续溅射损耗,且这一现象会随着辐照剂量的增加而愈发严重。由于辐照过程中氦泡间微观应力σ n作用会引起毗邻材料断裂及氦泡合并长大,且辐照溅射作用又会导致氦泡上层薄膜的损耗甚至破裂,因而这也是He⁺离子辐照Inconel 718合金表面纳米多孔结构的形成机制。     

Mechanism of He release from He implanted samples deduced from post-implantation He release measurements

A combination of post-implantation, room temperature, He release measurements and surface erosion investigation by scanning electron microscopy was used for the study of the possible mechanisms of He release from implanted samples. He release was greatly accelerated at fluences exceeding a critical value. The critical fluence for fast He release was found to be smaller than that needed for the onset of surface erosion and was independent of surface erosion, (i.e. different samples with markedly different amounts of surface erosion exhibited the same He release). Post-implantation He release could be explained in terms of atomic diffusion processes. It was suggested that at high He concentrations this diffusion takes place via micro-channels created by micro-erosion processes that are independent of the known macro-erosion processes (such as flaking, cracking and blistering).     

Erosion of tungsten surfaces in He and Ar/He plasma

Irradiation tests of tungsten surface were performed with He and He/Ar plasma generated by microwave electron cyclotron resonance. Thickness loss was used as the erosion rate of tungsten surface under the plasma irradiation. The results revealed that the thickness loss increased linearly with negative bias. SEM images proved that the addition of Ar apparently increased the plasma erosion. The thickness loss increased sharply with the Ar fraction of Ar/He mixture when it was \20 %,where the increasing slope of thickness loss lowered down gradually.     

The He/He heat exchanger — Design and semitechnical testing

This is a report on the development of the He/He heat exchanger which is used for high-temperature reactors (HTR) combined with the steam gasification of coal. A concept has been agreed on the basis of the requirements resulting from the application of the HTR. Subsequently those steps, which are required for the development of this component up to construction maturity are described. Simultaneously, questions dealing with material, construction, design, manufacture and related experimental development are taken into consideration.     

Metastable He deexcitation at semiconductor interfaces

A review is given of the application of metastable deexcitation spectroscopy (MDS) to the study of the interface formation between semiconductors and different materials. In particular we present an overview of the results obtained on nanostructured interfaces, where strain and reaction between the substrate and the overlayer atoms drive the growth mode and the morphology of the system. As prototypical examples we discuss the growth of CaF₂ on silicon and rare earths (Yb, Er) on silicon and gallium arsenide. The mechanisms and chemical reactions which bring to interface formation are examined on the basis of MDS results and their comparison with photoemission.     

小型高分辨率^3He／^4He质谱计的离子光学

一、前言地球上氦同位素组成有三个层次:地幔氦、地壳氦和大气氦。地幔氦是地球生成时保留下来的原生氦,~3He含量高,~3He/~4He比值约10~(-5);地壳氦是地壳中铀、钍等放射性元素蜕变过程中生成的,~3He/~4He比值约10~(-7)～10~(-8);大气氦是在地幔氦与地壳氦不断地向     

Double-Differential Cross Section of 5He Emission

The probability of ^5He particle emission has been affirmed theoretically. In order to describe the ^5He emission, the theoretical formula of the double-differential cross section of emitted ^5He is established. Based on the pick-up mechanism, used for calculating the formula of d, t, ^3He and a emissions, the theoretical formula of double-differential cross section of ^5He is obtained, which is expressed in the form of Legendre coefficients. In the case of low incident energies, the configuration is the dominant part in the reaction processes.     

Temperature dependence of He trapping in niobium

The total amount and the depth distributions of 9 and 15 keV implanted ³He ions trapped in polycrystalline niobium have been studied using the ³He(d,p)⁴He reaction. The implantation target temperature was varied from 20 to 1000° C and subsequent anneal studies were carried out for temperatures up to 1600° C. For implantation temperatures below 400° C all ²He particles coming to rest in the target are trapped. Between 500°C and 1000°C the trapping probability decreases gradually with increasing temperature to a few percent. A greater amount of helium is always retained upon annealing of a lower temperature implant to a particular temperature than is retained for implantation at that temperature.     

Resolution enhancement of the 3He(d,p)4He resonance for profiling helium in solids

The use of nuclear resonances techniques for characterizing the distribution and lattice location of implanted atoms in metals is a direct and, in principle, simple method for studying helium and hydrogen gas in CTR first wall materials. However, the reaction ³He(d,p)⁴He, has a broad (350 keV) half-width in the resonance yield curve. When using a deuteron beam, under normal probing conditions, to measure helium distributions in metals, a rather low stopping power results in limited resolution of about 3 μm. In many cases resolution of a few thousand angstroms or better is necessary. We have experimentally examined two resolution enhancement methods and reported the results in a previous article. The present paper will review those results and examine limitations of resolution enhancement that are obtainable through geometrical and mathematical techniques.