共查询到20条相似文献,搜索用时 15 毫秒
1.
Lott J.A. Schneider R.P. Jr. Zolper J.C. Malloy K.J. 《Photonics Technology Letters, IEEE》1993,5(6):631-633
Visible (670-nm) resonant cavity light-emitting diodes (RCLEDs) composed entirely of AlGaInP alloys are discussed. The devices consist of a strained quantum well optical cavity active region surrounded by AlInP/(AlGa)InP distributed Bragg reflectors (DBRs). The bottom DBR is a 60.5 period high reflector while the top partial reflector, which determines the emission linewidth, is a five-period output coupling DBR with a reflectance of about 57%. The devices exhibit linewidths of 4.8 nm (13.3 meV) at 300 K and are promising for plastic fiber communication systems and monochromatic displays 相似文献
2.
A.J. Shaw A.L. Bradley J.F. Donegan J.G. Lunney 《Photonics Technology Letters, IEEE》2004,16(9):2006-2008
The optical designs of resonant GaN light-emitting diodes (LEDs) have been determined for maximum extraction efficiency into typical plastic optical fiber of numerical aperture 0.5. An optimum extraction efficiency of 3.9% can be achieved for a practical resonant cavity LED (RCLED), taking account of current growth and processing considerations. The optimized device is a metal-active layer distributed Bragg reflector construction. Constructive interference effects from the top metal mirror are found to play the dominant role in efficiency enhancement. The extraction efficiency of an optimized resonant single-mirror LED is found to be 3.3%, indicating a small compromise in performance compared with the more complex RCLED structure. 相似文献
3.
Three kinds of 650 nm AlGaInP resonant cavity light-emitting diodes (RCLEDs) are fabricated by metal organic chemical vapor deposition (MOCVD) with different numbers of pairs of top distributed Bragg reflectors (DBRs), which are 15, 10 and 5, respectively. By comparing the full width at half maximum (FWHM), light power and the angular far-field emission of the devices, the device with 15 pairs of top DBRs shows the best performance. Its FWHM is 13.4 nm and the light power is 0.63 mW at a driving... 相似文献
4.
Modak P. D'Hondt M. Delbeke D. Moerman I. Van Daele P. Baets R. Demeester P. Mijlemans P. 《Photonics Technology Letters, IEEE》2000,12(8):957-959
We demonstrate microcavity light emitting diodes (MCLEDs) emitting at 650 nm on Ge substrates. Ge has the advantage of lower cost and higher strength compared to GaAs substrates. The multi-quantum well microcavity devices consisted of AlGaAs-based distributed Bragg reflector (DBR) mirrors, AlGaInP active material with an additional 5-μm p-Al0.55Ga0.45As current spreading layer on top of the p-DBR. A maximum external quantum efficiency of 4.35% and an optical power higher than 5 mW was obtained for a device with 200-μm diameter. The results indicate the potential use of MCLEDs on Ge for visible LEDs 相似文献
5.
6.
Streubel K. Helin U. Oskarsson V. Backlin E. Johansson A. 《Photonics Technology Letters, IEEE》1998,10(12):1685-1687
Visible (660 nm) resonant-cavity light-emitting (RCLEDs) have been fabricated. The top-emitting devices employed two AlGaAs-AlAs-Bragg mirrors and GaInP-AlGaInP quantum-well active layers. The device performance was characterized as a function of the device diameters, ranging from 24 to 202 μm. The larger devices exhibited a nearly linear increase of output power with injected current with 8.4-mW emission at 120 mA. A maximum external efficiency of 4.8% was measured at 4 mA on the 84-μm aperture devices. All devices exhibited a narrow emission at 659-661 nm with a linewidth around 3 nm. The results show that RCLED's are promising low-cost light sources for plastic fiber transmission as well as display applications 相似文献
7.
A resonant cavity enhanced InGaAs/AlGaAs phototransistor with high responsivity in the transmission window of the GaAs substrate is reported. The resonant wavelength is 929 nm with a full width at half maximum of 9 nm. The peak responsivity increases from 17 A/W at 0.1 μW incident optical power to 400 A/W at 100 μW 相似文献
8.
The properties of Alx Ga1-x As heterojunction incoherent edge emitters are described. Single (SH) and double-heterojunction (DH) diodes emitting at about 8200 Å were studied. The highest CW radiance measured perpendicular to the emitting facet was 95 W/cm2.sr at 4200 A/cm2for a stripe-geometry SH device. This high radiance level was found to be consistent with an operating life of many thousands of hours. The near- and far-field patterns of the diodes are presented as well as the spectral characteristics and the radiance as a function of drive current, both pulsed and dc. 相似文献
9.
Degradation in short-wavelength (AlGa)As lasers is investigated through lifetests of such devices operated in the incoherent mode. It is shown that degradation increases with emission energy for diodes containing zinc in the p-type (AlGa)As bounding region, whereas diodes containing Ge in this region, although not satisfactory as c.w. lasers because of high resistivity, show no degradation. A way out of this difficulty is proposed through double doping with Ge and Zn, in which case degradation appears to be brought down to the Ge level. 相似文献
10.
11.
Jalonen M. Kongas J. Toivonen M. Savolainen P. Salokatve A. Pessa M. 《Photonics Technology Letters, IEEE》1998,10(7):923-925
Monolithic super-bright resonant-cavity light-emitting diode operating at λ=663 nm has been developed. The diode consisted of a 1λ-thick AlGaInP active region sandwiched between AlAs-AlGaAs distributed Bragg reflectors. The device structure was grown by solid source molecular beam epitaxy. The current aperture of the emitter was created by lateral selective wet thermal oxidation. A record-high peak wall-plug efficiency of 2.2% and a continuous-wave output power of 1.4 mW were attained without heatsinking at room temperature from a diode having a diameter of 80 μm. The emission linewidth was as narrow as 4.5 nm 相似文献
12.
CMOS-compatible organic light-emitting diodes 总被引:1,自引:0,他引:1
Heinrich L.M.H. Muller J. Hilleringmann U. Goser K.F. Holmes A. Do-Hoon Hwang Stern R. 《Electron Devices, IEEE Transactions on》1997,44(8):1249-1252
We report a new method for the integration of light-emitting devices on a silicon substrate. As an active layer, we use unsubstituted PPV or PPV-based organic macromolecules with a p+-silicon anode and a cathode made from aluminum or titanium. The polymer is deposited by spin-coating the precursor, followed by a thermal conversion step to form the macromolecules. All process steps, including the possibility of dry etching of the active layer and the upper electrode, are typical for MOS technology. Spectrum analysis, current-voltage, and intensity measurements have been carried out for device characterization. These organic light-emitting diodes allow the monolithic integration of microelectronic circuits and light-emitting devices on one silicon chip applying only typical MOS process steps 相似文献
13.
H.W. Choi C.W. Jeon M.D. Dawson 《Photonics Technology Letters, IEEE》2004,16(1):33-35
The fabrication and performance of an InGaN light-emitting diode (LED) array based on a microring device geometry is reported. This design has been adopted in order to increase the surface area for light extraction and to minimize losses due to internal reflections and reabsorption. Electrical characteristics of these devices are similar to those of a conventional large-area LED, while the directed light extraction proves to be superior. In fact, these devices are found to be more efficient when operated at higher currents. This may be attributed to improved heat sinking due to the large surface area to volume ratio. The potential applications of these devices are also discussed. 相似文献
14.
以8-羟基喹啉(q)和1,3-二苯基-1,3-丙二酮定向合成了有机小分子配合物Znq(DBM),将其作为发光层制备了单色有机电致发光器件(OLED)。在结构为ITO/m-MTDATA(5nm)/NPB(40nm)/Znq(DBM)(60nm)/LiF(0.5nm)/Al(100nm)的器件中,启亮电压为5V,最大亮度达到4 575cd/m2。同时又在器件中引入间隔层BCP,研究其不同厚度对OLED性能的影响。在结构为ITO/m-MTDATA(5nm)/NPB(40nm)/BCP(x nm)/Znq(DBM)(60nm)/LiF(0.5nm)/Al(100nm)的器件中,当BCP层厚为0nm时,发光颜色为黄绿色;当BCP层厚为1nm时,发光颜色为白色,色坐标为(0.29,0.33),最大亮度为2 231cd/m2;当BCP层厚为5nm时,发光颜色为蓝色。根据器件结构和性能,讨论了其内部机理。 相似文献
15.
Han Chunlin Chen Chen Zou Penghui Zhang Yang Zeng Yiping Xue Fangshi Gao Jianfeng Zhang Zheng Geng Tao 《半导体学报》2009,30(6):064001-064001-3
We have fabricated Ino.53Ga0.47As/AlAs/InP resonant tunneling diodes (RTDs) based on the air-bridge technology by using electron beam lithography processing. The epitaxial layers of the RTD were grown on semiinsulating (100) InP substrates by molecular beam epitaxy. RTDs with a peak current density of 24.6 kA/cm2 and a peak-to-valley current ratio of 8.6 at room temperature have been demonstrated. 相似文献
16.
17.
Saarinen M. Vilokkinen V. Dumitrescu M. Pessa M. 《Photonics Technology Letters, IEEE》2001,13(1):10-12
Monolithic resonant cavity light-emitting diodes exhibiting an external quantum efficiency (ηex) up to 6.5% for 84-μm size devices at a wavelength at 655 nm have been demonstrated. Larger diodes, 150-300 μm in diameter, have the maximum ηex between 5.5% and 4.9% and launch power output up to 8 mW 相似文献
18.
We have investigated the properties of InP-based microcavity light-emitting diodes (λ=1.6 μm). Our objective was mainly to study the effects of lateral confinement of optical modes, which was achieved by the wet oxidation of double In0.52Al0.48 As layers. The smallest devices had a cavity radius of 0.5 μm, which becomes comparable to λ/n, where n is the effective refractive index of the photon emitting heterostructure. Two types of devices were tested: the first without any mirrors in the vertical direction, and the second with a combination of MgF/ZnSe DBR (top) and silver (bottom) to produce a low Q~35-45. The latter type of devices exhibited higher output power and narrower spectral linewidth; otherwise, the characteristics were very similar The output slope efficiency monotonically decreases with reduction of lateral cavity size up to ~2-μm in diameter and then is enhanced again for smaller cavity sizes. The slope efficiency of the smallest device (aperture diameter 1 μm) is almost equal to that measured for the largest devices. The maximum output power measured from the devices is 30 μW. The far-field pattern of devices with aperture radii ranging from 1.5 to 20 μm shows an angular width (FWHM) of 50°. On the other hand, devices with smaller aperture (radius ~0.5 μm) exhibit an angular width of 20°. The measured small-signal modulation bandwidth increases from ~0.45 GHz for the larger devices to 0.8 GHz for the smallest devices. Our results indicate that microcavity effects can be observed with only lateral photon confinement, making device fabrication requirements less stringent compared to surface-emitting lasers 相似文献
19.
《Electron Devices, IEEE Transactions on》1972,19(8):995-997
Response times of light emission from a GaAs0.6 P0.4 electroluminescent diode have been measured for stepwise applications of voltage. Turn-on times decrease either with an increase of the steady-state level of current or with superposition of a dc bias voltage. The main features of the experiment are in reasonable agreement with those of the calculated curves based on an equivalent circuit with a depletion-layer capacitance and a voltage-dependent diode conductance. 相似文献
20.
AlGaInP-sapphire glue bonded light-emitting diodes 总被引:1,自引:0,他引:1
Shoou-Jinn Chang Yan-Kuin Su Yang T. Chih-Sung Chang Tzer-Peng Chen Kuo-Hsin Huang 《Quantum Electronics, IEEE Journal of》2002,38(10):1390-1394
A novel method was proposed to glue an AlGaInP-GaAs light-emitting diode (LED) onto a transparent sapphire substrate. The absorbing GaAs was subsequently removed by selective wet etching. It was found that the emission efficiency could reach 401 m/W under 20-mA current injection for the 622-nm glue bonded (GB) AlGaInP-sapphire LED. It was also found that these GB LEDs are highly reliable, with small variations in operation voltage and luminescence intensity during the life test. 相似文献