A 5-MHz bandwidth 78.1-dB SNDR 2-2 MASH delta-sigma modulator

ABSTRACT

This paper presents a 4-bit, 2–2 multi-stage noise shaping (MASH) delta-sigma modulator (DSM) fabricated using a 0.18 µm complementary metal oxide semiconductor (CMOS) process. The DSM was designed using a cascade-of-integrators with a feedforward (CIFF) structure. The first integrator was designed to reduce the loading effect of the system’s front-end circuit using a switched-resistor integrator instead of the conventional switched-capacitor method. The CIFF structure requires an active adder, which is generally implemented with a high-bandwidth high-swing amplifier. In this paper, the active adder is eliminated and an adder-less integrator is implemented in the MASH DSM. The DSM prototype has an over-sampling ratio (OSR) of 16 and a 160 MHz sampling frequency. The prototype’s measured signal-to-noise ratio (SNR) is 82.4 dB and the signal-to-noise-plus-distortion ratio (SNDR) is 78.1 dB for a signal bandwidth of 5 MHz. The measured total power consumption is 26 mW at a 1.8 V supply voltage, and the chip core size is 0.67 mm². The energy required per conversion step is 0.4 pJ/conv.     

A 100-MHz bandpass sigma-delta modulator with a 75-dB dynamic range for IF receivers

A fourth-order switched-capacitor bandpassΣ△modulator is presented for digital intermediatefrequency (IF) receivers.The circuit operates at a sampling frequency of 100 MHz.The transfer function of the resonator considering nonidealities of the operational amplifier is proposed so as to optimize the performance of resonators.The modulator is implemented in a 0.13-μm standard CMOS process.The measurement shows that the signal-to-noise-and-distortion ratio and dynamic range achieve 68 dB and 75 dB,respectively,over a bandwidth of 200 kHz centered at 25 MHz,and the power dissipation is 8.2 mW at a 1.2 V supply.     

一种适用于中频接收机的具有75dB动态范围的100MHz带通$\Sigma \Delta$调制器

本文介绍了一款适用于中频接收机的四阶开关电容带通$\Sigma \Delta$调制器,采样频率为100MHz。为优化谐振器的性能,文中提出了考虑运算放大器非理想特性后谐振器的传输函数。本文设计的调制器采用0.13-um标准CMOS工艺,在25MHz附近200KHz信号带宽内测得的SNDR和DR分别为68dB和75dB。调制器工作在1.2V电源电压下,总功耗为8.2mW。     

A continuous-time sigma-delta modulator with 88-dB dynamic range and 1.1-MHz signal bandwidth

This paper presents the design and experimental results of a continuous-time /spl Sigma//spl Delta/ modulator for ADSL applications. Multibit nonreturn-to-zero (NRZ) DAC pulse shaping is used to reduce clock jitter sensitivity. The nonzero excess loop delay problem in conventional continuous-time /spl Sigma//spl Delta/ modulators is solved by our proposed architecture. A prototype third-order continuous-time /spl Sigma//spl Delta/ modulator with 5-bit internal quantization was realized in a 0.5-/spl mu/m double-poly triple-metal CMOS technology, with a chip area of 2.4 /spl times/ 2.4 mm/sup 2/. Experimental results show that the modulator achieves 88-dB dynamic range, 84-dB SNR, and 83-dB SNDR over a 1.1-MHz signal bandwidth with an oversampling ratio of 16, while dissipating 62 mW from a 3.3-V supply.     

A 3.2-GHz second-order delta-sigma modulator implemented in InP HBTtechnology

This paper presents a second-order delta-sigma (ΔΣ) modulator fabricated in a 70 GHz (f_T), 90 GHz (f_max) AlInAs-GaInAs heterojunction bipolar transistor (HBT) process on InP substrates. The modulator is a continuous time, fully differential circuit operated from ±5 volt supplies and dissipates 1 W. At a sample rate of 3.2 GHz and a signal bandwidth of 50 MHz (OSR=32100 MSPS Nyquist rate) the modulator demonstrates a Spur Free Dynamic Range (SFDR) of 71 dB (12-b dynamic range). The modulator achieves the ideal signal-to-noise ratio (SNR) of 55 dB for a second-order modulator at an oversampling ratio (OSR) of 32. The design of a digital decimation filter for this modulator is complete and the filter is currently in fabrication in the same technology. This work demonstrates the first ΔΣ modulator in III-V technology with ideal performance and provides the foundation for extending the use of ΔΣ modulator analog-to-digital converters (ADC's) to radio frequencies (RF)     

A 32-mW 320-MHz continuous-time complex delta-sigma ADC for multi-mode wireless-LAN receivers

We present an experimental continuous-time complex delta-sigma multi-bit modulator, implemented in standard 0.25-/spl mu/m CMOS technology and meeting all major requirements for application in IEEE 802.11a/b/g wireless LAN receivers. The clock frequency is 320 MHz, producing an oversampling ratio of 16 for 20 MHz channel bandwidths. The modulator supports two operation modes for zero-IF and low-IF receiver architectures respectively, requires a single 2.5-V power supply, and dissipates only 32 mW of power. The measured peak signal-to-noise ratio is 55 dB. Further experimental results using sine-wave and OFDM test signals are also presented.     

A power efficient differential 20-GHz low noise amplifier with 5.3-GHz 3-dB bandwidth

A 20-GHz differential two-stage low-noise amplifier (LNA) is demonstrated in a foundry digital 130-nm CMOS technology with 8-metal layers. This LNA has 20-dB voltage gain and /spl sim/5.5-dB noise figure at 20GHz with 24-mW power consumption. The measured IP/sub 1 dB/ and IIP/sub 3/ are -11 dBm and -4dBm. Compared to the previously published bulk CMOS LNAs operating above 20GHz, this LNA has exceptionally low power and current consumption especially considering its differential topology and wide bandwidth.     

A 60-dB 246-MHz CMOS variable gain amplifier for subsampling GSM receivers

A variable gain amplifier (VGA) is designed for a GSM subsampling receiver. The VGA is implemented in a 0.35-/spl mu/m CMOS process and approximately occupies 0.64 mm/sup 2/. It operates at an IF frequency of 246 MHz. The VGA provides a 60-dB digitally controlled gain range in 2-dB steps. The overall gain accuracy is less than 0.3 dB. The current is 9 mA at 3 V supply. The noise figure at maximum gain is 8.7 dB. The IIP3 is -4 dBm at minimum gain, while the OIP3 is -1 dBm at maximum gain. The group delay is 1.5 ns across 5-MHz bandwidth.     

A 3-GHz 32-dB CMOS limiting amplifier for SONET OC-48 receivers

A CMOS limiting amplifier with a bandwidth of 3 GHz, a gain of 32 dB, and a noise figure of 16 dB is described. The amplifier is fabricated in a standard 2.5-V 0.25-μm CMOS technology and consumes 53 mW. Inversely scaled amplifier stages and active inductors with a low voltage drop are used to achieve this performance. The amplifier is targeted for use in 2.5-Gb/s (OC-48) SONET systems     

A 3.3-V single-poly CMOS audio ADC delta-sigma modulator with 98-dB peak SINAD and 105-dB peak SFDR

This paper presents a second-order ΔΣ modulator for audio-band analog-to-digital conversion implemented in a 3.3-V, 0.5-μm, single-poly CMOS process using metal-metal capacitors that achieves 98-dB peak signal-to-noise-and-distortion ratio and 105-dB peak spurious-free dynamic range. The design uses a low-complexity, first-order mismatch shaping 33-level digital-to-analog converter and a 33-level flash analog-to-digital converter with digital common-mode rejection and dynamic element matching of comparator offsets. These signal-processing innovations, combined with established circuit techniques, enable state-of-the art performance in CMOS technology optimized for digital circuits     

A time-interleaved recursive loop band-pass delta-sigma modulator for a digital IF CDMA receiver

A bandpass delta-sigma modulator (BPDSM) is a key building block to implement a digital intermediate frequency (IF) receiver in a wireless communication system. This paper proposes a time-interleaved (TI) recursive loop BPDSM architecture that consists of five-stage TI blocks for a code-division multiple-access (CDMA) receiver. The proposed TI BPDSM provides reduction in the clock frequency requirement by a factor of 5 and relaxes the settling time requirement to one-fourth of the conventional approach. The test chip was designed and fabricated for a 30-MHz IF system with a 0.35-/spl mu/m CMOS process. The measured peak SNR for a 1.25-MHz bandwidth is 48 dB while dissipating 75 mW from a 3.3-V supply and occupying 1.3 mm/sup 2/.     

A 0.03 mm2 delta-sigma modulator with cascaded-inverter amplifier

A single stage inverter is introduced as a replacement for the conventional OTA to implement an inverter-based delta-sigma modulator. It achieves a high power and area efficiency. However, the low DC-gain and gain-bandwidth (GBW) have limited the application. This paper proposes a cascaded-inverter to increase the DC-gain and GBW, while maintaining the advantages of power and area efficiency. By cascading three inverters, the DC-gain is increased from 44 dB to 82 dB, and the GBW is increased from 100 MHz to 697 MHz. A third-order delta-sigma modulator using the proposed cascaded-inverter has been fabricated in a 0.11-μm CMOS process. When operating from a 1.2-V supply and clocked at 80 MHz, the prototype modulator achieves 59.4-dB peak SNDR over 500-kHz signal bandwidth while consuming 249 μW. Measurement results demonstrate that the application of the inverter-based amplifier, which is becoming popular due to its high power efficiency, can be extended to significantly higher speed circuits     

A 3.3-mW /spl Sigma//spl Delta/ modulator for UMTS in 0.18-/spl mu/m CMOS with 70-dB dynamic range in 2-MHz bandwidth

A quadrature fourth-order, continuous-time, /spl Sigma//spl Delta/ modulator with 1.5-b quantizer and feedback digital-to-analog converter (DAC) for a universal mobile telecommunication system (UMTS) receiver chain is presented. It achieves a dynamic range of 70 dB in a 2-MHz bandwidth and the total harmonic distortion is -74 dB at full-scale input. When used in an integrated receiver for UMTS, the dynamic range of the modulator substantially reduces the need for analog automatic gain control and its tolerance of large out-of-band interference also permits the use of only first-order prefiltering. An IC including an I and Q /spl Sigma//spl Delta/ modulator, phase-locked loop, oscillator, and bandgap dissipates 11.5 mW at 1.8 V. The active area is 0.41 mm/sup 2/ in a 0.18-/spl mu/m 1-poly 5-metal CMOS technology.     

A 3-mW 74-dB SNR 2-MHz continuous-time delta-sigma ADC with a tracking ADC quantizer in 0.13-/spl mu/m CMOS

A third-order continuous-time multibit (4 bit) /spl Delta//spl Sigma/ ADC for wireless applications is implemented in a 0.13-/spl mu/m CMOS process. It is shown that the power consumption can be considerably reduced by using a tracking ADC composed of three comparators with interpolation instead of using a 4-bit flash quantizer. Moreover, the usage of a tracking ADC opens the door to a new forward-looking dynamic element matching (DEM) technique, which helps to reduce the loop delay time and consequently improves the loop stability. The SNR is 74 dB over a bandwidth of 2 MHz. The ADC consumes 3 mW from a 1.5-V supply when clocked at 104 MHz. The active area is 0.3 mm/sup 2/.     

A 50-MHz multibit sigma-delta modulator for 12-b 2-MHz A/Dconversion

The authors examine the application of oversampling techniques to analog-to-digital conversion at rates exceeding 1 MHz. A cascaded multibit sigma-delta (ΣΔ) modulator that substantially reduces the oversampling ratio required for 12-b conversion while avoiding stringent component matching requirements is introduced. Issues concerning the design and implementation of the modulator are presented. At a sampling rate of 50 MHz and an oversampling ratio of 24, an implementation of the modulator in a 1-μm CMOS technology achieves a dynamic range of 74 dB at a Nyquist conversion rate of 2.1 MHz. The experimental modulator is a fully differential circuit that operates from a single 5-V power supply and does not require calibration or component trimming     

A cascaded continuous-time /spl Sigma//spl Delta/ Modulator with 67-dB dynamic range in 10-MHz bandwidth

This paper presents the design of a 2-2 cascaded continuous-time sigma-delta modulator. The cascaded modulator comprises two stages with second-order continuous-time resonator loopfilters, 4-bit quantizers, and feedback digital-to-analog converters. The digital noise cancellation filter design is determined using continuous-time to discrete-time transformation of the sigma-delta loopfilter transfer functions. The required matching between the analog and digital filter coefficients is achieved by means of simple digital calibration of the noise cancellation filter. Measurement results of a 0.18-/spl mu/m CMOS prototype chip demonstrate 67-dB dynamic range in a 10-MHz bandwidth at 8 times oversampling for a single continuous-time cascaded modulator. Two cascaded modulators in quadrature configuration provide 20-MHz aggregate bandwidth. Measured anti-alias suppression is over 50 dB for input signals in the band from 150 to 170 MHz around the sampling frequency of 160 MHz.     

一种用于数字电视接收机的58dB IRR CMOS镜像抑制混频器

The design,implementation,and characterization of an image-rejection double quadrature conversion mixer based on RC asymmetric polyphase filters（PPF） are presented.The mixer consists of three sets of PPFs and a mixer core for quadrature down conversion.Two sets of PPFs are used for the quadrature generation and the other one is used for the IF signal selection to reject the unwanted image band.Realized in 0.18-μm CMOS technology as a part of the DVB-T receiver chip,the mixer exhibits a high image rejection ratio（IRR） of 58 dB,a power consumption of 11 mW,and a 1-dB gain compression point of-15 dBm.     

A time-interleaved continuous-time /spl Delta//spl Sigma/ modulator with 20-MHz signal bandwidth

This paper presents the first implementation results for a time-interleaved continuous-time /spl Delta//spl Sigma/ modulator. The derivation of the time-interleaved continuous-time /spl Delta//spl Sigma/ modulator from a discrete-time /spl Delta//spl Sigma/ modulator is presented. With various simplifications, the resulting modulator has only a single path of integrators, making it robust to DC offsets. A time-interleaved by 2 continuous-time third-order low-pass /spl Delta//spl Sigma/ modulator is designed in a 0.18-/spl mu/m CMOS technology with an oversampling ratio of 5 at sampling frequencies of 100 and 200 MHz. Experimental results show that a signal-to-noise-plus-distortion ratio (SNDR) of 57 dB and a dynamic range of 60 dB are obtained with an input bandwidth of 10 MHz, and an SNDR of 49 dB with a dynamic range of 55 dB is attained with an input bandwidth of 20 MHz. The power consumption is 101 and 103 mW, respectively.     

A low-power 2nd-order CT delta-sigma modulator with a single operational amplifier

We present a 2nd-order 4-bit continuous-time (CT) delta-sigma modulator (DSM) employing a 2nd-order loop filter with a single operational amplifier. This choice strongly reduces the power consumption, since operational amplifiers are the most power hungry blocks in the DSM. The DSM has been implemented in a 65 nm CMOS process, where it occupies an area of \(0.08\,\hbox {mm}^2\) . It achieves an SNDR of 64 dB over a 500 kHz signal bandwidth with an oversampling ratio of 16. The power consumption is \(76\,\upmu \hbox {W}\) from a 800 mV power supply. The DSM figure-of-merit is 59 fJ/conversion. The CT DSM is well suited for the receiver of an ultra-low-power radio.     

A CMOS image-rejection mixer with 58-dB IRR for DTV receivers

The design, implementation, and characterization of an image-rejection double quadrature conversion mixer based on RC asymmetric polyphase filters (PPF) are presented. The mixer consists of three sets of PPFs and a mixer core for quadrature down conversion. Two sets of PPFs are used for the quadrature generation and the other one is used for the IF signal selection to reject the unwanted image band. Realized in 0.18-μm CMOS technology as a part of the DVB-T receiver chip, the mixer exhibits a high image rejection ratio (IRR) of 58 dB, a power consumption of 11 mW, and a 1-dB gain compression point of -15 dBm.