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1.
A scale converter designed at the D. I. Mendeleev Institute of Metrology is described, which, together with the equipment
of the State volt unit, makes it possible to reproduce the size of the emf unit, the volt, over an extended range of voltages
(up to 10 V) with errors σA=7.2·10-9 and σB=5.6·10-9.
Translated from Izmeritel'naya Tekhnika, No. 4, pp. 41–42, April, 1998. 相似文献
2.
Yu. I. Shanin O. I. Shanin V. A. Afanas’ev 《Journal of Engineering Physics and Thermophysics》2000,73(2):209-219
Results of further investigation of some variants of wafer structures are given. The effect of the angle of flow on the hydraulic
resistance and heat transfer at Re numbers of 1·102–2·104 is revealed. The temperature field of a two-stage system is analyzed. It is shown that a size reduction of the structure
and an increase in the number of stages make it possible to obtain the maximum possible coefficient of reduced heat transfer
(2.5–2.8)·105 W/(m2·K).
Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 73, No. 2, pp. 214–223, March–April, 2000. 相似文献
3.
A large number of thin films of cadmium oxide have been prepared on glass substrates by spray pyrolysis method. The prepared
films have uniform thickness varying from 200–600 nm and good adherence to the glass substrate. A systematic study has been
made on the influence of thickness on resistivity, sheet resistance, carrier concentration and mobility of the films. The
resistivity, sheet resistance, carrier concentration and mobility values varied from 1·56–5·72×10−3 Ω-cm, 128–189 Ω/□, 1·6–3·9×1021 cm−3 and 0·3–3 cm2/Vs, respectively for varying film thicknesses. A systematic increase in mobility with grain size clearly indicates the reduction
of overall scattering of charge carriers at the grain boundaries. The large concentration of charge carriers and low mobility
values have been attributed to the presence of Cd as an impurity in CdO microcrystallites. Using the optical transmission
data, the band gap was estimated and found to vary from 2·20–2·42 eV. These films have transmittance around 77% and average
reflectance is below 2·6% in the spectral range 350–850 nm. The films aren-type and polycrystalline in nature. SEM micrographs of the CdO films were taken and the films exhibit clear grains and grain
boundary formation at a substrate temperature as low as 523 K. 相似文献
4.
ZnS thin films of different thicknesses were prepared by chemical bath deposition using thiourea and zinc acetate as S2− and Zn2+ source. The effect of film thickness on the optical and structural properties was studied. The optical absorption studies
in the wavelength range 250–750 nm show that band gap energy of ZnS increases from 3·68–4·10 eV as thickness varied from 332–76
nm. The structural estimation shows variation in grain size from 6·9–17·8 nm with thickness. The thermoemf measurement indicates
that films prepared by this method are of n-type. 相似文献
5.
Flexible piezo- and pyroelectric composite was made in the thin film form by spin coating. Lead Zirconate Titanate (PZT) ceramic
powder was dispersed in a castor oil-based polyurethane (PU) matrix, providing a composite with 0–3 connectivity. The dielectric
data, measured over a wide range of frequency (10–5 Hz to 105 Hz), shows a loss peak around 100 Hz related with impurities in the polymer matrix. There is also an evidence of a peak in
the range 10–4 Hz, possibly originating from the glass transition temperature Tg of the polymer. The pyroelectric coefficient at 343 K is 7.0×10–5 C·m–2·K–1 which is higher than that of β-PVDF (1×10–5 C·m–2·K–1).
Electronic Publication 相似文献
6.
D. V. Dukhopel'nikov A. V. Zhukov D. V. Kirillov M. K. Marakhtanov 《Measurement Techniques》2005,48(10):995-999
High-speed video filming by the VS-FAST-NG CCD-array-based video camera from the firm of Videoskan with speeds of 1000 and
5000 frames per second and exposure time of 1·10−3 and 2·10−4 sec, respectively, is conducted. It is established that the arc burns from two or three cathode spots for (1–1.2)·10−3 sec. The mean and local speeds of the group of cathode spots are determined. If there is no external magnetic field present,
the mean speed is equal to 5–6 m/sec. If there is a magnetic field B = 0.005 T present, the mean speed is equal to 15–16 m/sec.
__________
Translated from Izmeritel'naya Tekhnika, No. 10, pp. 42–44, October, 2005. 相似文献
7.
Yogesh Sharma N. Sharma G. V. Subba Rao B. V. R. Chowdari 《Bulletin of Materials Science》2009,32(3):295-304
Cadmium ferrite, CdFe2O4, is synthesized by urea combustion method followed by calcination at 900°C and characterized by X-ray diffraction (XRD),
scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM) and selected area electron diffraction
(SAED) techniques. The Li-storage and cycling behaviour are examined by galvanostatic cycling, cyclic voltammetry (CV) and
impedance spectroscopy in the voltage range, 0·005–3·0 V vs Li at room temperature. CdFe2O4 shows a first cycle reversible capacity of 870 (± 10) mAhg−1 at 0·07C-rate, but the capacity degrades at 4 mAhg−1 per cycle and retains only 680 (± 10) mAhg−1 after 50 cycles. Heat-treated electrode of CdFe2O4 (300°C; 12 h, Ar) shows a significantly improved cycling performance under the above cycling conditions and a stable capacity
of 810 (± 10) mAhg−1 corresponding to 8·7 moles of Li per mole of CdFe2O4 (vs theoretical, 9·0 moles of Li) is maintained up to 60 cycles, with a coulombic efficiency, 96–98%. Rate capability of
heat-treated CdFe2O4 is also good: reversible capacities of 650 (± 10) and 450 (± 10) mAhg−1 at 0·5 C and 1·4 C (1 C = 840 mAg−1) are observed, respectively. The reasons for the improved cycling performance are discussed. From the CV data in 2–15 cycles,
the average discharge potential is measured to be ∼0·9 V, whereas the charge potential is ∼2·1 V. Based on the galvanostatic
and CV data, ex situ-XRD, -TEM and -SAED studies, a reaction mechanism is proposed. The impedance parameters as a function of voltage during the
1st cycle have been evaluated and interpreted.
Dedicated to Prof. C N R Rao on his 75th birthday, and his contributions to science for the past 56 years 相似文献
8.
X-ray diffraction patterns of chemically deposited lead sulphide thin films have been recorded and X-ray line profile analysis
studies have been carried out. The lattice parameter, crystallite size, average internal stress and microstrain in the film
are calculated and correlated with molarities of the solutions. Both size and strain are found to contribute towards the broadening
of X-ray diffraction line. The values of the crystallite size are found to be within the range from 22–33 nm and the values
of strain to be within the range from 1·0 × 10−3–2·5 × 10−3. 相似文献
9.
Yu. I. Rzhavin 《Measurement Techniques》1999,42(9):883-887
A highly sensitive pressure sensor based on two Mach-Zender interferometers is described. The interferometer measuring and
reference channels are made of single-mode W-lightguides. The measured sensitivity was shown experimentally to be 65·10−2 dB·P−1·m−1.
Translated from Izmeritel'naya Tekhnia, pp. 43–46, September, 1999. 相似文献
10.
Transparent and conducting SnO2 films are prepared at 500°C on quartz substrates by chemical vapour deposition technique, involving oxidation of SnCl2. The effect of oxygen gas flow rate on the properties of SnO2 films is reported. Oxygen with a flow rate from 0·8–1·35 lmin−1 was used as both carrier and oxidizing gas. Electrical and optical properties are studied for 150 nm thick films. The films
obtained have a resistivity between 1·72 × 10−3 and 4·95 × 10−3 ohm cm and the average transmission in the visible region ranges 86–90%. The performance of these films was checked and the
maximum figure of merit value of 2·03 × 10−3 ohm−1 was obtained with the films deposited at the flow rate of 1·16 lmin−1. 相似文献
11.
A K Pal 《Bulletin of Materials Science》1999,22(3):341-351
The electrical properties of CdTe and optical properties of ZnS in nanocrystalline thin film form are studied with a view
to have a clearer understanding of the optical processes and the carrier transport mechanisms in nanocrystalline II–VI semiconductors,
in general. Nanocrystalline ZnS and CdTe films were deposited by magnetron sputtering of respective targets in argon plasma.
The optical absorption data of nanocrystalline ZnS films (thickness 10–40 nm) could be explained by the combined effects of
phonon and inhomogeneity broadening along with optical loss due to light scattering at the nanocrystallites. The conductivity
of CdTe (grain size within 4–4·7 nm) showed (T
0/T)
p
dependence withp ∼ 0·5 indicating the presence of a Coulomb gap near the Fermi level. The width of the Coulomb gap varied within 0·02–0·04
eV depending on the deposition condition. The existing theoretical models were used for estimating hopping energy (0·02–0·04
eV) and hopping distance (2·8–5·1 nm) in nano CdTe films. 相似文献
12.
M. I. Kiselev A. P. Kozlov A. N. Morozov A. L. Hazolin V. I. Pronyakin A. V. Solov'ev 《Measurement Techniques》1996,39(12):1207-1209
The rotation period has been measured for a turbine shaft in a thermal power station by an optoelectronic method. The electronic
unit is screened from electromagnetic interference at line frequency, and the fiber-optic lines provide a measurement error
of 5·10−4%.
Translated from Izmeritel'naya Tekhnika, No. 12, pp. 28–29, December, 1996. 相似文献
13.
O. A. Dal’nova O. A. Shiryaeva Yu. A. Karpov T. Yu. Alekseeva A. A. Shiryaev D. G. Filatova 《Inorganic Materials》2010,46(15):1613-1617
The conditions for determination and group concentration of platinum metals (PMs) in the presence of matrix components using
new S,N-containing complex-forming sorbents in solutions obtained after decomposition of decontaminated autocatalysts are
proposed. The technique of atomic-absorption determination of PMs from a solution (n × 10−4−n × 10−2; s
r
= 0.15–0.07) and a solid phase (n × 10−5−n × 10−4; s
r
= 0.20–0.12) is developed. 相似文献
14.
Polycrystalline samples of the mixed nanoferrites, Li0·5 + 0·5x
Ti
x
Fe2·5 − 1·5x
O4 (0·02 ≤ x ≤ 0·1), were prepared by combustion method at lower temperatures compared to the conventional high temperature sintering
for the first time at low temperatures, using PEG which acts as a new fuel and oxidant. XRD patterns reveal a single-phase
cubic spinel structure. The as synthesized Li–Ti ferrites are in nanocrystalline phase. The crystallite size was found to
be in the range 16–27 nm. SEM images reveal rod-like morphology in all the samples with a discontinuous grain growth. The
B–H loops have been traced using VSM technique, for all the compositions, at room temperature and the hysteresis parameters
are calculated. Saturation magnetization decreases with increase in Ti content due to the fact that the Ti4 + ion, which is a non-magnetic ion, replaces a magnetic Fe3 + ion. The hysteresis loops show clear saturation at an applied field of ±10 kOe and the loops are highly symmetric in nature.
The cation distribution is known indirectly by using saturation magnetization values. 相似文献
15.
This study presents the distillation separation of hydrofluoric acid with use of the salt effect on the vapor–liquid equilibrium
for acid aqueous solutions and acid mixtures. The vapor–liquid equilibrium of hydrofluoric acid + salt systems (fluorite,
potassium nitrate, cesium nitrate) was measured using an apparatus made of perfluoro alkylvinylether. Cesium nitrate showed
a salting-out effect on the vapor–liquid equilibrium of the hydrofluoric acid–water system. Fluorite and potassium nitrate
showed a salting-in effect on the hydrofluoric acid–water system. Separation of hydrofluoric acid from an acid mixture containing
nitric acid and hydrofluoric acid was tested by the simple distillation treatment using the salt effect of cesium nitrate
(45 mass%). An acid mixture of nitric acid (5.0 mol · dm−3) and hydrofluoric acid (5.0 mol · dm−3) was prepared as a sample solution for distillation tests. The concentration of nitric acid in the first distillate decreased
from 5.0 mol · dm−3 to 1.13 mol · dm−3, and the concentration of hydrofluoric acid increased to 5.41 mol · dm−3. This first distillate was further distilled without the addition of salt. The concentrations of hydrofluoric acid and nitric
acid in the second distillate were 7.21 mol · dm−3 and 0.46 mol · dm−3, respectively. It was thus found that the salt effect on vapor–liquid equilibrium of acid mixtures was effective for the
recycling of acids from acid mixture wastes. 相似文献
16.
MING KANG XIAOMING LIAO GUANGFU YIN XUN SUN XING YIN LU XIE JUN LIU 《Bulletin of Materials Science》2010,33(6):713-717
The dental zirconia–leucite composites were synthesized by high temperature solid-state method using potash feldspar, potassium
carbonate and zirconia as raw materials. The mechanical properties and the coefficient of thermal expansion (CTE) of the prepared
zirconia–leucite composites were tested. The results show that the bending strength, the fracture toughness and the metal–ceramic
bonding strength of the prepared samples are about 110 MPa, 3·5 MPa/m1/2 and 45 MPa, respectively. The CTE was about 13·73×10–6 °C–1 and close to that of Ni–Cr dental alloy (14·0×10–6 °C–1). The results indicate that the introduction of zirconia is beneficial to the improvement in the mechanical properties and
CTE adjustment of porcelain material. The clinical application of the zirconia–leucite composites with good metal–ceramic
bonding strength in the dental restoration could be envisioned. 相似文献
17.
V. V. Komar’ 《Journal of Engineering Physics and Thermophysics》2000,73(2):440-443
A study is made of the change in the optical properties of polymer compositions based on W-containing complexes of highly
substituted carboxymethyl cellulose under the action of ionizing radiation (α-particles,60Co γ-rays). It is shown that film layers based on the complexes mentioned can be used as radiochromic materials for α-radiation
dosimetry in the dose range of 4·102–5.1·105 Gy.
Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 73, No. 2, pp. 443–446, March–April, 2000. 相似文献
18.
The DC electrical resistivity results of La4 −x
Sr1 +x
Cu5 −x
Fe
x
O12 + δ (0 ≤x ≤ 1·0) showed that for S1 (x = 0) and S2 (x = 0·25) the temperature coefficient of resistivity (TCR), dρ/dT, is positive and slightly increases with increasing temperature in the range 20–270 K. This shows the metallic nature of
S1 and S2. For the samples S3(x = 0·5) and S4 (x = 0·75), TCR slightly increases in the range 20–270 K, with change in sign from negative to positive at ∼ 80 K and ∼ 130
K, respectively. These results show the metal-insulator type transition in S3 and S4. For the sample S5 (x = 1·0), the TCR is negative and gradually increases in the range 20–270 K, which shows its semiconductor-like behaviour.
The activation energy for S5 is found to be 0·21 × 10−2 eV. Furthermore, the DC resistivity results of S1–S5 in the range 350–660 K are in conformity with the low temperature results.
The very weak temperature dependence of magnetic susceptibility results of S1–S3 show Pauli-paramagnetic behaviour in the
range 77K–400 K, while S4 and S5 exhibit Pauli-paramagnetic behaviour in the range 77–850 K. Long-range antiferromagnetic
interaction is observed in S5 (x = 1·0) belowT
c ∼ 100 K. The room temperature EPR lineshapes gradually improve from metallic S1 (x = 0) to semiconductor-like S5(x = 1·0). Negativeg-shift is observed in the samples S2–S5 with increasing trend ing
iso-values of 1·880 in S2 to 1·961 in S5. However, theg
iso-value for S1 could not be observed due to very poor lineshape. 相似文献
19.
Yu. V. Mishchenko 《Measurement Techniques》2011,54(1):31-39
A laser-based fiber-optic interference refractometer for use in automatic control of the gradient of the index of refraction
of large plane-parallel glass optical elements with resolution on the order of 8·10–7 cm–1 and absolute error at most 2·10–5 cm–1 is proposed. 相似文献
20.
V. F. Matveichuk 《Measurement Techniques》1999,42(6):603-610
The theory is given, with an analysis and various examples, of the practical implementation of a method for measuring the
relative permittivity ɛ*=ɛ′−iɛ″ of materials in the 0.5–26-GHz frequency range. The results and experimental errors are given of measurements of ε′
in the range 2–200 and of tanδ in the range from 5·10−5 to 2·10−2.
Translated from Izmeritel'naya Tekhnika, No. 6, pp. 62–66, June, 1999. 相似文献