一维缺陷光子晶体多个禁带中的窄带缺陷模

用特征矩阵法研究了一维缺陷光子晶体的透射谱。结果发现:在一维缺陷光子晶体的透射谱中的多个禁带内都有窄带缺陷模,窄带缺陷模的波长越大,其宽度越大;当入射角增大后,波长越长的窄带缺陷模的强度变化越小,位置向短波方向移动越多,且S偏振光与P偏振光的窄带缺陷模的分离越大;增大一维缺陷光子晶体中周期性介质的厚度,窄带缺陷模的波长和移动的范围都增大。本研究对一维缺陷光子晶体的窄带缺陷模的选择使用具有重要意义。     

具有复介电缺陷一维三元光子晶体禁带特性的研究

运用光学传输矩阵理论,研究了具有复介电常量缺陷层一维三元光子晶体的禁带特性.数值模拟结果得出:含有单缺陷的一维三元光子晶体的禁带中出现透射峰A和透射峰B,缺陷层复介电常量的虚部对透射峰B的影响很大.虚部为正时,表现为对透射峰B的吸收,随着虚部的增加,透射峰B逐渐降低;虚部为负时,表现为对透射峰B先增益然后吸收,随着虚部的增加,透射峰B先增加后减少.但缺陷层复介电常量虚部的变化对透射峰A基本不影响.本研究为光子晶体同时实现双通道滤波器和放大器提供理论参考.     

两端对称缺陷对对称结构光子晶体透射谱的影响

通过传输矩阵法理论,研究两端对称缺陷C对一维光子晶体ACmB(AB)n(BA)nBCmA透射谱的影响,发现:当无缺陷C时,透射谱符合镜像对称结构光子晶体的透射谱特征。当引入缺陷C后,随着缺陷折射率nC的增大,禁带中的透射峰逐渐变宽的同时向高频方向移动。缺陷周期数m及其光学厚度DC对透射谱的影响,在数值上具有明显的奇偶特性,m为奇数或DC为奇数倍时,禁带中心均出现一个较宽的通带,且通带宽度随着m或DC的增大逐渐变窄,而且通带上方的振荡加快,但通带中心所处频率位置不变;m为偶数或DC为偶数倍时,禁带中心均出现一条细窄缺陷模,且缺陷模的宽度随着m或DC的增大缓慢变窄,但其位置不变;两端对称缺陷对对称结构光子晶体透射谱的调制规律,为光子晶体设计窄带、宽带光学滤波器或光开关等提供指导。     

负折射激活介质一维光子晶体超窄带滤波器研究

把一维时域有限差分方法用于可见光区一维光子晶体超窄带滤波设计研究,首先适当选择完整的一维二元光子晶体参数找到可见光区中的禁带,然后在完整一维光子晶体中间引入缺陷层可得到在某一波长出现超窄通带.进一步研究缺陷层参数物理厚度、折射率对超窄带的位置、透过率的调节,数值结果表明当缺陷层用无损介质时超窄通带的中心波长与缺陷层物理厚度、折射率有很大关系,透过率与它们关系不大.当介质是有损或激活介质时超窄通带的中心波长与介质折射率虚部消光系数、激活系数大小无关,消光系数越大透过率越小,激活系数与透过率没有线性关系但有最大值出现,当缺陷层介质是负折射材料时折射率数值在一定范围内取值同样会出现窄带滤波特性,折射率数值绝对值较大时在可见光区禁带中会出现多个透过峰.     

介质光学厚度对光子晶体透射谱特性的调制

利用传输矩阵法理论,研究介质光学厚度对一维光子晶体(AB)5(BA)5透射谱特性的影响,结果表明:只要A、B介质光学厚度满足DA=DB,随着介质光学厚度的增大,光子晶体透射峰的透射率、频率位置和带宽均保持不变;当A、B介质的光学厚度不相等即DA≠DB时,随着DA或DB,或DA、DB的增大,禁带中透射峰的透射率不变但带宽变宽,且当DADB时透射峰向高频方向移动,反之则向低频方向移动。介质光学厚度对光子晶体透射谱的调制规律,可为光子晶体模型的构建、窄带光学滤波器和光学开关的设计等提供有益参考。     

一种具有光放大功能的滤波器设计

设计了包含缺陷层和多层异质结构的混合结构的一维光子晶体,然后在光子晶体中加入泵浦源.用传输矩阵法研究了加入泵浦源前后光子晶体的透射谱,结果发现该混合结构的光子晶体具有非常宽周且平坦的禁带,且在此禁带内只有一条极窄的透射带,加入激励源后的透射带透射率远远大于1,并且透射带的透射率和位置都可以通过调节光子晶体的参数来改变.利用这些特性,设计了一种具有放大功能的宽禁带超窄单通滤波器,当激活系数取0.033 4时,在1000～2000 nm的禁带范围内只有在红外波段1550 nm处出现一条透射率为1.1×106,3 Db带宽为0.005 nm的透射窄带.     

两端对称缺陷复合光子晶体特性研究

用传输矩阵法计算了两端对称缺陷复合光子晶体的传输特性。计算结果表明：两端对称缺陷复合光子晶体［D（AB）mD］2结构中的禁带出现两个完全共振透射峰。通过控制温度来微小改变光子晶体介电层的厚度,使得完全共振透射峰移动,且各介质厚度的变化与透射峰波长的变化呈良好的线性关系,折射率大的介电层厚度的变化对共振透射峰波长的变化较大。此结果为设计所需要的共振透射峰波长的双通道滤波器提供了理论依据,也为该结构实现热敏开关提供了理论基础。     

一维多层介质光子晶体的禁带特征及其在滤波中的应用

利用光学传输矩阵法,研究了一维多层介质光子晶体的禁带特征.分析讨论了介质层排列、折射率及几何厚度等因素对光子晶体禁带的影响,进一步数值计算研究表明四层介质以上的光子晶体会因介质层排列顺序不同而产生不同的光子禁带,利用这一特点设计了一种新型的光子晶体滤波器,并研究了其窄带滤波特性.     

对称型正负交替一维光子晶体超窄带滤波器

构造了(AB)N1(BA)N2对称型正负折射率交替一维光子晶体,并利用传输矩阵法进行数值模拟,研究了这种正负折射率交替一维光子晶体的能带结构与各参数之间的关系.结果表明:当两种材料的光学厚度相同时,该结构光子晶体比传统的光子晶体的带隙大得多,且在主禁带内有极窄的透射带.并利用此透射带,设计了一种在红外波段1550nm窗口3dB带宽可以做到0.000001nm以下,窗口内透过率接近100%的超窄带滤波器.该结构的光子晶体可以用作超窄带滤波器,有望在光通信超密集波分复用系统中获得广泛应用.     

光子晶体掺杂与密集波分复用光通信

采用传输矩阵的方法研究带缺陷的一维光子晶体,缺陷的引入使得原来不透电磁波的禁带中出现了缺陷模。计算表明随缺陷介质的折射率增大到一定值时,光子晶体禁带外的透射带为分立值,掺杂折射率值越大,各透射带越窄、越密,禁带边缘越陡,形成的通道数就越多,整个频带内为多个密集通道的窄带滤波特性的分立透射谱,由此掺杂光子晶体信道间信号串扰受到抑制。     

Lattice‐Registered Two‐Photon Polymerized Features within Colloidal Photonic Crystals and Their Optical Properties

In this work we demonstrate a significant advance in the introduction of embedded defects in 3D photonic crystals by means of two‐photon polymerization. We have developed the ability to precisely position embedded defects with respect to the lattice of 3D photonic crystals by imaging the structure concurrently with two‐photon writing. Defects are written with near‐perfect lattice registration and at specifically defined depths within the crystal. The effect of precise defect position on the optical response is investigated for embedded planar cavities written in a photonic crystal. The experimental data are compared to spectra calculated using the Scalar Wave Approximation (SWA).     

双缺陷光子晶体禁带结构特性研究

用特征矩阵法研究了带有双缺陷的一维光子晶体的禁带结构特性。由于两缺陷间存在相互作用,其禁带结构的性质受到两缺陷间隔光学厚度及缺陷层折射率的影响。定义了描述两缺陷间相互作用强弱的关联系数,进而分析了关联系数与两缺陷层间相隔光学厚度及缺陷层折射率的关系。通过数值计算和计算机模拟,确定了光子晶体结构的特征间隔光学厚度。     

一维光子晶体的应变测量

采用ZnSe和Na3AlF6两种经典介质材料构造一维光子晶体,缺陷层介质为Na3AlF6。利用传输矩阵法对带有缺陷的一维光子晶体的传光特性进行了理论分析,并得到其带隙特性。分别数值研究了参考光子晶体以及应变前后测量光子晶体的透射谱,分析结果表明光子晶体所受的纵向应变与其缺陷峰波长之间呈线性关系,根据这种对应关系提出了一种新的测量应变的方法。由于粘贴光子晶体的基底与光子晶体的线膨胀系数不同,且温度变化也会引起构成光子晶体材料折射率的变化,导致光子晶体透射谱缺陷峰波长的漂移。为了消除温度误差,在测量光路中设置了与测量光子晶体结构相同的参考光子晶体,对温度的影响进行了补偿。实验表明,测量系统的灵敏度为6×10-4nm/με,测量范围为0～2000με。     

基元介质数对光子晶体光传输特性的调制

运用传输矩阵法理论,通过计算机计算模拟,研究基元介质数对光子晶体光传输特性的调制规律,结果表明:无论是标准结构还是对称结构光子晶体,透射谱中均出现一条带宽很宽的主禁带,而且不同基元介质数光子晶体的主禁带带宽不一样。对于标准周期结构光子晶体(AB)m、(ABC)m和(ABCD)m,主禁带中不出现透射峰,但随着基元介质数增加,主禁带的带宽发生变化,而且主禁带两侧会出现若干条分立透射峰。对于对称结构光子晶体(AB)m(BA)m、(ABC)m(CBA)m和(ABCD)m(DCBA)m,主禁带中恒定出现一条透射率为100 %的窄透射峰,随着基元介质数增加,主禁带中窄透射峰条数及其透射率保持不变,但主禁带及其中窄透射峰的带宽会变窄,同时主禁带两侧会出现若干条分立透射峰,而且分立透射峰的条数多于标准周期结构光子晶体主禁带两侧的透射峰条数。基元介质数对标准周期结构和对称结构光子晶体透射能带谱的调制规律,对新型光学滤波器、光学开关等器件的研究和设计具有一定的理论参考价值。     

基于石墨烯和1维光子晶体的THz宽带吸收器

为了获得宽带高效率光波吸收器,设计了石墨烯和1维光子晶体的复合结构,采用修正的传输矩阵法研究了其传输特性。结果表明,在一定条件下,复合结构在太赫兹波段具有一定带宽和高效率的吸收带,吸收带的位置和宽度与1维光子晶体通带一致;在一些特别的吸收带,吸收峰值达到1;对相同的结构吸收结果还与入射方向有关。石墨烯和1维光子晶体的结合进一步拓展了它们的应用范围。     

Rapid and Large‐Scale Fabrication of Full Color Woodpile Photonic Crystals via Interference from a Conformal Multilevel Phase Mask

The practical use of photonic crystals with structural colors requires technology capable of rapidly producing large‐area, three‐dimensional (3D) periodic nanostructures. Until now, the fabrication of 3D photonic crystals has relied mainly on additive manufacturing and colloidal self‐assembly. These technologies have provided a useful academic platform based on precisely controlled 3D periodicity but have not evolved into mass production technology. Here, optical lithography for the rapid fabrication of large‐area 3D photonic crystals with structural colors is introduced. The key strategy is to incorporate two orthogonal line gratings (periodicity: 300 nm) made of an elastomer to create a conformal multilevel phase mask. When the mask is irradiated with a 355 nm laser, the five beam interference is established in the proximity region. The interlayer thickness between the two orthogonal line gratings controls the phase difference, which is closely related to the symmetry of the resulting 3D interference pattern. The interlayer thickness is designed to produce a woodpile structure with a planar periodicity of 300 nm and a vertical periodicity of 716 nm. The pattern area of the woodpile photonic crystal is expanded to 1 in². Red, green, and blue colors are experimentally realized by controlling the vertical shrinkage of the photoresist.     

Direct Transcription of Two‐Dimensional Colloidal Crystal Arrays into Three‐Dimensional Photonic Crystals

A simple protocol for the fabrication of three‐dimensional (3D) photonic crystals in silicon is presented. Surface structuring by nanosphere lithography is merged with a novel silicon etching method to fabricate ordered 3D architectures. The SPRIE method, sequential passivation reactive ion etching, is a one‐step processing protocol relying on sequential passivation and reactive ion etching reactions using C₄F₈ and SF₆ plasma chemistries. The diffusion of fresh reactants and etch product species inside the etched channels is found to play an important role affecting the structural uniformity of the designed structures and the etch rate drift is corrected by adjusting the reaction times. High quality photonic crystals are thus obtained by adding the third dimension to the two‐dimensional (2D) colloidal crystal assemblies through SPRIE. Careful adjustments of both mask design and lateral etch extent balance allow the implementation of even more complex functionalities including photonic crystal slabs and precise defect engineering. 3D photonic crystal lattices exhibiting optical stop‐bands in the infrared spectral region are demonstrated, proving the potential of SPRIE for fast, simple, and large‐scale fabrication of photonic structures.     

Analysis on characteristics of 1-D apodized and chirped photonic crystals containing negative refractive materials

Using transfer matrix method, the optical transmission properties of 1-D photonic crystals composed partially of negative refraction media are analyzed. The transmission spectra of periodic photonic crystal, chirped photonic crystal and apodized photonic crystal are numerically simulated respectively. By contrast with optical transmission properties of ordinary photo- nic crystals made of positive refraction media, the transmission spectra of apodized photonic crystal become unregular, the Bragg flat-headed area recurs but the peak of transmission does not change significantly. Futhermore, the band gap range of chirped photonic crystal diminishes gradually.     

Alignment and stacking of semiconductor photonic bandgaps bywafer-fusion

Semiconductor-based three-dimensional (3D) photonic crystals are developed by utilizing a wafer fusion and alignment technique. A clear and considerable bandgap effect is successfully demonstrated in infrared to near-infrared wavelengths. It is pointed out that the introduction of arbitrary defect states and/or efficient light emitters can be possible in this method. For the example of the introduction of a light-emitting element, a surface-emitting laser with a two-dimensional (2D) photonic crystal structure is fabricated, and very unique lasing characteristics are demonstrated. These results encourage us very much for the development of various quantum optical devices and circuits including not only passive, but also active devices     

光子晶体及二维光子晶体波导

光子晶体是一种新兴的光学材料,其各种优异的光学特性可以用来制作所需要的光子晶体器件,。本文介绍了一维、二维、三维光子晶体的结构、特性及其主要的理论研究方法、实验制备方法,并着重阐述了二维光子晶体波导的特性及其制备方法及国内外研究进展。