喷雾热解法制备p型铟锡氧化物透明导电薄膜

利用喷雾热解法制备了p型铟锡氧化物透明导电薄膜. 主要研究了铟含量和热处理温度对薄膜的晶体结构、导电类型和载流子浓度以及光吸收特性等的影响. 结果表明, 当In/Sn比较小 时, 薄膜为金红石结构的二氧化锡, 导电类型为n型; 当In/Sn比在0.06～0.25范围内且热处理温度T≥600℃时, 薄膜仍为金红石结构, 但导电类型转为p型的; 当In/Sn比超过0.3时, 薄膜中有立方相的In₂Sn₂O_7-x生成, 由于氧空位的存在, 薄膜又转变为n型. 因此要获得p型导电的铟锡氧化物薄膜, In/Sn比不宜过低, 也不能过高. 热处理温度对薄膜的导电类 型也有影响, 对于In/Sn=0.2的薄膜, 温度低于550℃时薄膜为n型导电, 但当热处理温度高于550℃时, 由于In³⁺取代Sn⁴⁺, 因此薄膜为p型导电. 当热处理温度高于700℃ 时, 薄膜中空穴浓度达到饱和数值为4×10¹⁸cm^-3, 与此同时, 透射率在可见光范围内仍高达80%以上.     

p型透明导电的锡镓氧化物薄膜的制备及其表征

本文通过磁控溅射锡镓合金靶(Ga/Sn=0.2)及热氧化的方法,成功地制备了p型透明导电的锡镓氧化物(TGO)薄膜.X射线衍射(XRD)测试结果表明,TGO薄膜保持SnO2的金红石结构.吸收谱测试表明TGO薄膜在可见光范围内透过率可达到85%以上,其光学禁带宽度Eg约3.8 eV.霍尔效应测试结果表明,TGO薄膜的载流子类型及其浓度与热处理温度密切相关.热氧化温度过高或过低均不利于空穴浓度.当热氧化温度处于(600～700) ℃之间时,可以获得p型透明导电的TGO薄膜,最高空穴浓度高达8.84×1018 cm-3.     

Cu/In原子比及硫化温度对于CuInS2薄膜性能影响

采用中频交流磁控溅射方法,在玻璃基底上沉积Cu-In预制膜,采用固态硫化法制备获得了CuInS2(CIS)吸收层薄膜.考察了预制膜Cu/In原子比及硫化温度对于CIS薄膜结构及禁带宽度影响.通过XRD及Raman光谱分析了薄膜结构,通过近红外透过曲线得出薄膜禁带宽度.结果表明,随着预制膜中Cu与In原子比(Cu/In)及硫化温度不断升高,薄膜CuAu(CA)相含量逐渐降低,黄铜矿(CH)相逐渐升高,薄膜结晶性逐渐改善.600℃以上硫化时薄膜中主要存在CH相CuInS2.薄膜禁带宽度随着预制膜中Cu/In原子比及硫化温度不断升高而升高,Cu/In原子比为1.05,硫化温度为500℃时薄膜禁带宽度可达1.40eV.     

Sn掺杂CdO透明导电薄膜的制备和光电性能研究

通过脉冲激光法在石英玻璃基底上沉积了锡掺杂氧化镉(Sn-CdO)透明导电薄膜.X射线衍射,分光光度计和霍尔效应仪检测了薄膜的结构、光学和电学性能.结果表明Sn的掺杂提高了薄膜[111]方向的择优生长,而且促使了(200)晶面衍射角增大.Sn-CdO薄膜的光学禁带宽度随着Sn掺杂含量的增加而变宽.另外,适量的Sn掺杂可以明显改善CdO薄膜的电学性能,比如2.9 at％ Sn掺杂CdO薄膜的电阻率是未掺杂薄膜的十二分之一,载流子浓度是未掺杂的十三倍.因而光学和电学性能的改良使得Sn-CdO薄膜作为透明导电材料具有重要的应用价值.     

透明导电氧化物镀膜玻璃的光伏应用前景

一、透明导电氧化物镀膜玻璃简介1.透明导电氧化物镀膜玻璃的定义透明导电氧化物镀膜(Transparent Conductive Oxide,TCO)玻璃,是在平板玻璃表面通过物理或者是化学镀膜的方法均匀镀上一层透明导电氧化物薄膜,主要包括铟(In)、锡(Sn)、锌(Zn)和镉(Cd)氧化物及     

P型透明导电SnO2薄膜的研究进展

SnO2薄膜是一种应用广泛的宽禁带半导体材料.近几年来,随着对SnO2的光电性质及其在光电器件方面应用的开发研究,SnO2薄膜成为研究热点之一.制备掺杂的p型SnO2是形成同质p-n结以及实现其实际应用的重要途径.近年来,国内外在p型SnO2薄膜研究方面取得了较大的进展.目前报道的p型SnO2薄膜的最高电导率为5.952Ω-1cm-1.并且得到了具有较好非线性伏安特性的铟锡氧化物的透明p-n结.本文就其最新进展进行了综述.     

化学水浴法制备ZnS薄膜及其光学性能

以酒石酸与柠檬酸钠为络合剂,采用化学水浴法(CBD)沉积ZnS薄膜.利用X射线衍射仪(XRD)、X射线能谱仪(EDAX)、扫描电镜(SEM)、紫外-可见分光光度计(UV-Vis)研究ZnS薄膜的结构、组成、形貌及光学性能,利用透射光谱计算ZnS薄膜的光学禁带宽度(Eg).结果表明:ZnS薄膜呈立方相晶体结构,经过300℃熟处理1h的ZnS薄膜原子比为Zn:S=1:0.85,表面均一致密,在可见光区的平均透射率达到80%,光学禁带宽度为3.74ev,适合作为太阳能电池过渡层.     

Sb掺杂Sn_2S_3薄膜的制备及光学特性

真空蒸发制备Sb掺杂Sn2S3多晶薄膜(玻璃衬底),研究不同比例Sb掺杂对Sn2S3薄膜的结构、表面形貌、化学组分及光学特性的影响。实验给出5%掺Sb的薄膜经380℃热处理30min(氮气保护)得到正交晶系的Sn2S3∶Sb多晶薄膜,薄膜表面颗粒大小均匀,膜面致密有轻微颗粒聚集现象。薄膜体内Sn与S化学计量比为1∶1.49,掺Sb后为1∶0.543,薄膜中Sn、S、Sb分别以Sn2+、Sn4+、S2-、Sb5+存在。纯Sn2S3薄膜的光透过率在350~500nm波长范围内基本为零,随着波长增大,光透过率增加,其直接光学带隙为2.2eV,吸收边为564nm;掺Sb后薄膜的光透率明显降低,光学带隙为1.395eV比未掺杂时减小0.805eV,吸收边发生红移为889nm。     

射频磁控溅射制备Sn薄膜及其电化学性能研究

采用射频磁控溅射方法在铜基片上制备了锡薄膜,把在两种溅射功率(200和350W)下制备的Sn薄膜制成锂离子电池电极。用X射线衍射、电子探针、扫描电镜及充放电实验研究比较了二电极的性能。结果表明,在350W的溅射功率下制备的Sn薄膜,与基底生成了锡铜合金;锡铜合金的生成提高了Sn薄膜与铜基片的结合力,因而具有更高的循环性能,其首次嵌锂比容量为707mAh/g,30次循环后,仍保持有643mAh/g的嵌锂比容量。     

硅异质结太阳能电池用透明导电氧化物薄膜的研究现状及发展趋势

硅异质结(SHJ)太阳能电池是目前光伏产业中的重要组成部分,其由于具有高开路电压(V_oc)等优点而引起了广泛的关注。在硅异质结太阳能电池中,透明导电氧化物(TCO)薄膜层的光学性能和电学性能分别影响着电池的短路电流(J_sc)、填充因子(FF),进而影响电池的转换效率。近年来,SHJ电池中TCO层的研究主要集中于掺杂的In₂O₃和ZnO体系。本文从硅异质结太阳能电池的不同结构出发,概述了TCO薄膜的光电性能(透过率、禁带宽度、方块电阻、载流子浓度、迁移率和功函数)以及与相邻层的接触对电池性能的影响,介绍了不同体系的透明导电氧化物薄膜在硅异质结太阳能电池中的应用及研究现状,并展望其未来的发展趋势。     

Effect of very low to high Sb-doping on the structural,electrical, photo-conductive and thermoelectric properties of fluorine-doped SnO<Subscript>2</Subscript> (FTO) thin films prepared by spray pyrolysis technique

Transparent conducting fluorine and Sb-doped [SnO₂: (F, Sb)] thin films have been deposited onto preheated glass substrates using the spray pyrolysis technique by the various dopant quantity of spray solution. The effect of antimony impurities on the structural, morphological, electrical, Thermo-electrical, optical and photoconductive properties of films has been investigated. The [F/Sn] atomic concentration ratio (x) in the spray solution is kept at value of 0.7 and the [Sb/Sn] atomic ratio (y) varied at values of 0, 0.0005, 0.001, 0.002, 0.01, 0.03, 0.05, 0.07 and 0.10. It is found that the films are polycrystalline in nature with a tetragonal crystal structure corresponding to SnO₂ phase having orientation along the (110) and (200) planes. SEM images indicated that nanostructure of the films has a particle type growth. The average grain size increases with increasing spraying quantity of Sb-dopant. The compositional analysis of SnO₂: (F, Sb) thin films were studied using EDAX. SEM and AFM study reveals the surface of SnO₂: (F, Sb) to be made of nanocrystalline particles. The Hall Effect measurements have shown n-type conductivity in all deposited films. The lowest sheet resistance and highest the carrier concentration about 7.7 Ω/□ and 6.6 × 10²², respectively, were obtained for the film deposited with y = [Sb/Sn] = 0.001 and x = [F/Sn] = 0.7. The maximum of the Seebeck coefficient equal to 12.8 μV K^?1 was obtained at 400 K for the film deposited with y = [Sb/Sn] = 0.10. The average transmittance of films varied over the range 10–80 % with change of Sb-concentration. The band gap values of samples were obtained in the range of 3.19–3.8 eV. From the photoconductive studies, the Sb-doped films exhibited sensitivity to incident light especially in y = 0.001. The electrical resistivity and carrier concentration vary in range 5.44 × 10^?4 to 1.02 × 10^?2Ω cm and 2.6 × 10²²–6.6 × 10²² cm^?3, respectively.     

Analysis of critical doping level of sprayed antimony doped tin oxide films

Antimony doped tin oxide films are fabricated using a simplified and inexpensive spray pyrolysis technique. The variation in the sheet resistance, as a function of Sb/Sn ratio in the spraying solution, is studied. The sheet resistance decreases with the increase in doping level, attains a minimum at a particular doping level and increases with further doping. This critical value of the doping ratio (Sb/Sn_critical), at which the transition takes place, is found to be 2.5 at.%, when the concentration of the precursor solution is 0.8 M and 4.5 at.% when the concentration is 0.4 M. The reason for this variation is analyzed with the support of the Sb/Sn_critical values, obtained by various researchers. This Sb/Sn_critical is found to depend mainly on the carrier concentration of the films.     

Synthesis and characterization of antimony-doped tin oxide (ATO) with nanometer-sized particles and their conductivities

This study focused on finding the optimum conditions for displaying higher conductivity in an ATO-PET film prepared using the solvothermal method. The conductivity of the ATO film with Sb1.5:Sn8.5 increased to 800 °C calcinations. It did not, however, increase further even though the calcinations were at a temperature above 1000 °C. The average grain size measured from the FESEM micrographs was distributed within a 5.0-nm (at 400 °C) to 50.0-nm (at 1000 °C) range. It was determined from the XRD results that the special peaks assigned to the SnO₂ tetragonal type dominated until 1000 °C in the ATO particles with Sb1.5:Sn8.5. It was also confirmed that the hydrophilicity (the T–OH/T–O ratio was larger) of the ATO nano-particle with Sb1.5:Sn8.5 was largest at 600 °C calcinations. Its binding energy remarkably increased at 1000 °C calcination. In various Sb:Sn mole ratios, the conductivity was at its best in ATO films (for Sb1.5:Sn8.5) with 600 °C calcinations, 9.0×10⁵ (Ω/□). When 1,4-butanediol was used as a solvent, the conductivity of the ATO film was enhanced and the ATO film exhibited higher distribution than the other solvents did. The conductivity of the ATO film prepared in basic conditions (pH=10.0) was enhanced compared to those in acidic conditions.     

AlSb多晶薄膜的制备及性质

用磁控溅射法制备了Al/Sb多层薄膜,通过X射线衍射(XRD)、X射线荧光(XRF)、Hall效应、暗电导率温度关系及透过谱的测试研究了退火前后薄膜的结构和性质。XRD测试结果表明,刚沉积的薄膜只有Sb的结晶相,而Al则以非晶态形式存在,500℃退火后化合为AlSb多晶,且沿(111)择优取向。Hall效应测试、电导激活能及光能隙的计算结果表明,所制备的AlSb多晶薄膜为P型材料,且载流子浓度为1019cm-3,光能隙为1.64eV,电导率随温度的变化可分为两个过程,在30℃到110℃,薄膜的电导率随温度的增加而缓慢增加,而在110℃到260℃间增加明显,升温电导激活能为0.11eV和0.01eV,这与AlSb多晶薄膜在升温过程中的结构变化有关。将制备的AlSb多晶薄膜应用于TCO/CdS/AlSb/ZnTe:Cu/Au结构的太阳电池器件中,已观察到明显的光伏效应,说明用这种方法制备的AlSb多晶薄膜适于作太阳电池的吸收层。     

Microstructure and physical properties of nanofaceted antimony doped tin oxide thin films deposited by chemical vapor deposition on different substrates

Antimony doped tin oxide SnO₂: Sb thin films have been fabricated by atmospheric pressure chemical vapour deposition at substrate temperature varying between 350 °C and 420 °C in a horizontal reactor, from a mixture of hydrated SnCl₂, SbCl₃ and O₂ gas. The films were grown on glass substrates and onto polished and porous n-type silicon. Doped films fabricated with various Sb (Sb/Sn %) contents ranging from undoped 0% to 4% were characterised employing different optical characterisation techniques, like X-ray diffraction, transmittance and reflectance in the wavelength range of 300 to 2500 nm and ellipsometry. The films exhibit the usual cassiterite diffraction pattern with high crystalline structure. Examination of the surface by scanning electron microscopy (SEM) showed that the films are textured made up of many pyramidal crystallites with nanofaceted surfaces, indicating highly stabilised material. The presence of inverted pyramids indicates that the crystallites grown by coalescence. The surface morphology was found to be independent on the kind of the substrate. From X-Ray spectra and SEM observations we get the texture the lattice constant and the grain size. The optical results provide information on film thickness, optical parameters and transmittance upon antimony concentration. The microstructure of the films, the grain growth topics (nucleation, coalescence…) depend strongly on deposition conditions and doping concentration. The observed variations of both the resistivity ρ and transmittance T are correlated to antimony atoms concentration which induced variation in the microstructure and in the size of SnO₂ nanograins (typically 20-40 nm). In this work, we have determined the feasibility of incorporating the correct amount of Sb atoms in tin oxide film by means of resistivity and transmission. SEM observations showed that the substrate do not affect the morphology.     

Cu/Sn比率对Cu2SnSe3薄膜若干物理性质的影响

利用射频(RF)磁控溅射在玻璃基片上共溅射沉积Cu-Sn预制膜。采用固态硒化法,制备Cu/Sn化学计量比在1.87～2.22之间的Cu2SnSe3薄膜。研究了Cu/Sn比率对Cu2SnSe3薄膜的晶体结构、微结构、光学性能以及电学性能的影响。X射线衍射(XRD)结果表明,所制备的Cu2SnSe3薄膜为立方晶体结构,具有(111)择优取向;贫铜的Cu2SnSe3薄膜光学带隙Eg随着Cu/Sn比率增大而增大;富铜的Cu2SnSe3薄膜光学带隙Eg随着Cu/Sn比率增大而不变。薄膜电阻率为1.67～4.62mΩ.cm。     

Characterization of evaporated gold-tin films

Evaporated Au and Sn films with total thicknesses in the range 1000–5000 Å were studied using backscattering of 2.0 MeV ⁴He ions, scanning and transmission electron microscopy and X-ray diffraction. Si and oxidized Si were used as substrates. In addition, some films were made self-supporting. The atomic percentage of Sn in the films ranged from about 30 to 90. Diffusion was observed within the unannealed films and resulted in the formation of the phases AuSn, AuSn₂ and AuSn₄. The backscattering spectra showed that the films form a layered structure before heat treatment. In most cases annealing for 10 min at about 200°C is sufficient to homogenize the films. The annealed films are made up of a single phase whenever this is consistent with the overall composition. Otherwise the annealed films contain a mixture of two of the Au phases or AuSn₄ and Sn depending on the atomic percentage of Sn in the films.     

Optical and structural characteristics of Sb-doped SnO2 thin films grown on Si (111) substrates by Sol–Gel technique

The optical and structural characteristics of Sb-doped SnO₂ films grown on Si (111) substrates by modified sol–gel technique have been investigated. The films are both polycrystalline and retain the SnO₂ peaks of the rutile phase corresponding to (110), (101), (211) and (310) without any other phases appearing. X-ray photoelectron spectroscopy shows the peaks corresponding to the Sn 3d _5/2, the O 1s, and the Sb 3d _5/2 states. Refractive indices n, and extinction coefficients k, as functions of the incident photon energy were obtained for the films by spectroscopic ellipsometry measurement, and the refractive indices were from 1.95 to 1.50 at 2.6 eV with increasing Sb content. The optical constants, n and k, of the films can be controlled by variable Sb content. These results are important for the applications in integrated optical devices.     

Transport properties of thin SnO2〈Sb〉 films grown by pulsed laser deposition

Thin SnO₂<Sb> films grown by pulsed laser deposition have been characterized by X-ray diffraction, optical spectroscopy, and scanning electron microscopy. The carrier mobility and concentration in the films have been determined as functions of target composition (0–8 at % Sb) using Hall effect measurements, and the resistivity of the films has been measured by a four-probe technique. The lowest resistivity (ρ = 2 × 10^?3 Ω cm) and the highest transmission (? 85%) of the films in the spectral range 400-800 nm have been obtained at a target composition Sb/(Sn + Sb) = 2 at %. The observed variation in the resistivity of the films is determined by changes in carrier concentration to a greater extent than by changes in carrier mobility. X-ray photoelectron spectroscopy results demonstrate that the predominant charge state of the antimony in the films is Sb⁵⁺.