Effect of Bi2O3 additives on sintering and microwave dielectric behavior of La(Mg0.5Ti0.5)O3 ceramics

Bi₂O₃ was selected as liquid phase sintering aid to lower the sintering temperature of La(Mg_0.5Ti_0.5)O₃ ceramics. The sintering temperature of La(Mg_0.5Ti_0.5)O₃ ceramics is generally high, about 1600 °C. However, the sintering temperature was significantly lowered about 275 °C from 1600 °C to 1325 °C by incorporating in 15 mol% Bi₂O₃ and revealed the optimum microwave dielectric properties of dielectric constant (?_r) value of 40.1, a quality factor (Q × f) value of 60,231 GHz, and the temperature coefficient (τ_f) value of 70.1 ppm/°C. During all addition ranges, the relative dielectric constants (?_r) were different and ranged from 32.0 to 41.9, the quality factors (Q × f) were distributed in the range of 928–60,231 GHz, and the temperature coefficient (τ_f) varies from 0.3 ppm/°C to 70.3 ppm/°C. Noticeably, a nearly zero τ_f can be found for doping 5 mol% Bi₂O₃ sintering at 1325 °C. It implies that nearly zero τ_f can be achieved by appropriately adjusting the amount of Bi₂O₃ additions and sintering temperature for La(Mg_0.5Ti_0.5)O₃ ceramics.     

Effect of Bi2O3 and B2O3 additives on the sintering temperature, microstructure, and microwave dielectric properties for Sm(Mg0.5Ti0.5)O3 ceramics

The microwave dielectric properties of Sm(Mg_0.5Ti_0.5)O₃ incorporated with various amount of Bi₂O₃ and B₂O₃ additives have been investigated systematically. In this study, both Bi₂O₃ and B₂O₃ additives acting as a sintering aid can effectively lower the sintering temperature from 1550 °C to 1300 °C. The ionic radius of Bi³⁺ for a coordination number of 6 is 0.103 nm, whereas the ionic radius of B³⁺ is 0.027 nm. Clearly, the ionic radius of Bi³⁺ is greatly larger than one of B³⁺, which resulted in the specimens incorporated with Bi₂O₃ having larger lattice parameters and cell volume than those incorporated with B₂O₃. The experimental results show that no second phase was observed throughout the entire experiments. Depending on the interfacial tension, the liquid phase may penetrate the grain boundaries completely, in which case the grains will be separated from one another by a thin layer as shown in Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with Bi₂O₃. Whereas, in Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with B₂O₃, the volume fraction of liquid is high, the grains may dissolve into the liquid phase, and rapidly rearrange, in which case contact points between agglomerates will be dissolved due to their higher solubility in the liquid, leading plate-like shape microstructure.A dielectric constant (?_r) of 29.3, a high Q × f value of 26,335 GHz (at 8.84 GHz), and a τ_f of −32.5 ppm/°C can be obtained for Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with 10 mol% Bi₂O₃ sintered at 1300 °C. While Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with 5 mol% B₂O₃ can effectively lower temperature coefficient of resonant frequency, which value is −21.6 ppm/°C. The Sm(Mg_0.5Ti_0.5)O₃ ceramic incorporated with heavily Bi₂O₃ and B₂O₃ additives exhibits a substantial reduction in temperature (∼250 °C) and compatible dielectric properties in comparison with that of an un-doped one. This implied that this ceramic is suitable for miniaturization in the application of dielectric resonators and filters by being appropriately incorporated with a sintering aid.     

Structural and thermoelectric properties of hydrothermal-processed Ag-doped Fe2O3

Fe_2-xAg_xO₃ (0?≤?x?≤?0.04) nanopowders with various Ag contents were synthesized at different hydrothermal reaction temperatures (150?°C and 180?°C). Their structural properties were fully investigated through an X-ray diffraction, a Fourier transform infrared spectroscopy, and an X-ray photoelectron spectroscopy. The hydrothermal reaction temperature, time, and Ag content remarkably affected the morphological characteristics and crystal structure of the synthesized powders. The Fe_2-xAg_xO₃ (0?≤?x?≤?0.04) powders synthesized at 150?°C for 6?h and the Fe_2-xAg_xO₃ (0.02?≤?x?≤?0.04) powders synthesized at 180?°C for 12?h formed the orthorhombic α-FeOOH phase with a rod-like morphology, whereas the Fe_2-xAg_xO₃ (0?≤?x?≤?0.01) powders synthesized at 180?°C for 12?h formed the rhombohedral α-Fe₂O₃ phase with a spherical-like morphology. The Fe_1.98Ag_0.02O₃ fabricated by utilizing Fe_1.98Ag_0.02O₃ powders synthesized at 180?°C showed the largest power factor (0.64?×10^?5 Wm^?1 K^?2) and dimensionless figure-of-merit (0.0036) at 800?°C.     

Electrical properties of niobium doped Bi4Ti3O12-SrBi4Ti4O15 intergrowth ferroelectrics

Nb-doped Bi₄Ti₃O₁₂-SrBi₄Ti₄O₁₅ intergrowth ceramics have been prepared by modified oxalate route. XRD phase analysis confirmed the formation of single phase compound. Nb-doping does not affect the basic crystal structure of the intergrowth. SEM micrographs showed that the grain size of the ceramics decreases with Nb-doping. The temperature dependence of dielectric constant and losses was investigated in the temperature range 30–800 °C and frequency range 1 kHz–1 MHz. With Nb-doping, the T_c of the ferroelectrics reduces and peak permittivity increases. Doping also introduces small relaxor behavior in the ferroelectrics. The dc conductivity of the ceramics decreases with doping. The remnant polarization (P_r) of the intergrowth ferroelectrics is increased with Nb doping.     

Low-temperature sintering and microwave dielectric properties of 3Z2B glass–Al2O3 composites

A potential low temperature co-fired ceramics system based on zinc borate 3ZnO–2B₂O₃ (3Z2B) glass matrix and Al₂O₃ filler was investigated with regard to phase development and microwave dielectric properties as functions of the glass content and sintering temperature. The densification mechanism for 3Z2B–Al₂O₃ composites was reported. The linear shrinkage of 3Z2B glass–Al₂O₃ composites exhibited a typical one-stage densification behavior. XRD patterns showed that a new crystalline phase, ZnAl₂O₄ spinel, formed during densification, indicating that certain chemical reaction took place between the 3Z2B glass matrix and the alumina filler. Meanwhile, several zinc borate phases, including 4ZnO·3B₂O₃, crystallized from the glass matrix. Both of the reaction product phase and crystallization phases played an important role in improving the microwave dielectric properties of composites. The optimal composition sintered at 850–950 °C showed excellent microwave dielectric properties: ?_r = ∼5.0, Q·f₀ = ∼8000 GHz, and τ_f = ∼−32 ppm/°C at ∼7.0 GHz.     

The influence of sintering aids for Nd(Mg0.5Ti0.5)O3 microwave dielectric ceramics properties

The influence of various sintering aids on the microwave dielectric properties and the structure of Nd(Mg_0.5Ti_0.5)O₃ ceramics were investigated systematically. B₂O₃, Bi₂O₃, and V₂O₅ were selected as liquid-phase sintering aids to lower the sintering temperature. The sintered Nd(Mg_0.5Ti_0.5)O₃ ceramics are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and microwave dielectric properties. The sintering temperature of Nd(Mg_0.5Ti_0.5)O₃ microwave dielectric ceramics is generally high, about 1500 °C. However, the sintering temperature was significantly lowered about 175 °C from 1500 °C to 1325 °C by incorporating in 10 mol% B₂O₃ and revealed the optimum microwave dielectric properties of dielectric constant (_r) value of 26.2, a quality factor (Q × f) value of 61,307 (at 9.63 GHz), and τ_f value of −45.5 ppm/°C. NdVO₄ secondary phase was observed at 10 mol% V₂O₅ addition in the sintering temperature range of 1300–1325 °C, which led the degradation in microwave dielectric properties. The microwave dielectric properties as well as grain sizes, grain morphology, and bulk density were greatly dependent on sintering temperature and various sintering aids. In this study, it is found that Nd(Mg_0.5Ti_0.5)O₃ incorporated with 10 mol% B₂O₃ with lower sintering temperature and excellent dielectric microwave properties may be suggested for application in microwave communication devices. The use of liquid-phase sintering, the liquid formed during firing normally remains as a grain boundary phase on cooling. This grain boundary phase can cause a deterioration of the microwave properties. Therefore, the selection of a suitable sintering aid is extremely important.     

Structural anomaly and electrical relaxation in (Na2/3Pb1/3)(Mn1/2Nb1/2)O3 ceramics

The X-ray diffraction patterns of (Na_2/3Pb_1/3)(Mn_1/2Nb_1/2)O₃ ceramics were measured within 15–850 K temperature range. The anomaly in the thermal expansion temperature dependence occurred in 250–365 K range. The generalised Cole–Cole model was proposed to describe the measured effective electric permittivity influenced by high electric conduction and the coexistence of two contributions ?*(T,f) = ?*_lattice + ?*_carriers was considered. The analysis of the electric permittivity and conduction exhibited two relaxation processes. The electric conduction relaxation characteristic time values indicated the small polaron mechanism with τ₀ ≈ 10⁻¹³ s occurring in 240–345 K range and the ionic mechanism with τ₀ ≈ 10⁻¹¹ s involved in the other relaxation occurring in the 320–510 K range. The ionic relaxation process was ascribed to a subsystem of defects, which was weakly interrelated to the anomaly in thermal expansion of the (Na_2/3Pb_1/3)(Mn_1/2Nb_1/2)O₃ ceramics. The Gate model was proposed to describe the ionic relaxation mechanism.     

Effects of preparation method on the microstructure and electrical properties of tungsten bronze structure Sr2NaNb5O15 ceramics

Herein, Sr₂NaNb₅O₁₅ (SNN) ceramics with a filled tungsten bronze structure were synthesized by the various methods of conventional mixed-oxide (CMO), two-step sintering (TSS), reactive sintering (RS) and molten salt synthesis (MSS). It was found that varying the preparation method could result in significant differences in the ceramic morphology, relative density, and electrical properties. The TSS, RS and MSS methods all produced a pure tungsten bronze phase SNN ceramic, though the CMO method could not. Further characterization revealed a sharp drop in the Curie temperature and significant deterioration of the dielectric properties in the ceramics prepared by MSS compared to the other methods, likely owing to residual K⁺ from the molten salt. Systematic comparison of the electrical properties of the ceramics produced by the RS and TSS method found that the RS method was the most suitable preparation method for SNN ceramics. The superior ferroelectric and piezoelectric properties in the sample produced by the RS method were attributed to the highly distorted NbO₆ octahedron, as suggested by Raman spectroscopy.     

Phase equilibria in the Bi2O3-CuO-Nb2O5 ternary system

A complete subsolidus ternary phase diagram of the Bi₂O₃-CuO-Nb₂O₅ (BCN) system was constructed. Careful firing control and phase analysis were applied to determine the phase assemblages and compatibilities over a wide range of temperatures, i.e. 700–925 °C. Phase-pure BCN pyrochlores were found to crystallise in cubic symmetry, space group Fd3m, No. 227 with lattice constants in the range of 10.4855 (5)<x<10.5321 (3). The mechanism of this limited subsolidus series could be represented by a general formula, Bi_3.08−xCu_1.84+2x/9Nb_3.08+7x/9O_14.16+6x/9 (0≤x≤0.36) wherein the reduction in Bi content was compensated by a proportion amount of copper and niobium together with non-stoichiometry in oxygen.     

Structure and electrical properties of Ca2+-doped (Na0.47Bi0.47Ba0.06)TiO3 lead-free piezoelectric ceramics

The lead-free piezoelectric ceramics (Na_.47Bi_.47Ba_.06)_1-xCa_xTiO₃ (x?=?0, 0.01, 0.02, 0.03, 0.05, and 0.08, abbreviated as BNBTC/0, BNBTC/1, BNBTC/2, BNBTC/3, BNBTC/5, and BNBTC/8, respectively) were obtained using the solid-state reaction method. The structure, electric conductivity, and dielectric, ferroelectric, and piezoelectric properties of the Ca²⁺-doped (Na_.47Bi_.47Ba_.06)TiO₃ ceramics were thoroughly investigated. The ceramics sintered at 1200?°C exhibit dense microstructures, having relative densities higher than 96%. The X-ray diffraction results demonstrate that all ceramics have a pure perovskite structure. The mean grain sizes of the ceramics are related to the Ca²⁺ quantity. A small quantity of Ca²⁺ ions (x?≤?0.03) improves the piezoelectric and ferroelectric properties of the samples. The dielectric behavior of the samples is sensitive to the Ca²⁺ content and electric poling. The results demonstrate that the electrical properties of the (Na_.47Bi_.47Ba_.06)TiO₃ lead-free ceramics can be well tuned by varying the Ca²⁺ quantity.     

Evolution of microstructure and electrical properties of Aurivillius phase (CaBi4Ti4O15)1-x(Bi4Ti3O12)x ceramics

(CaBi₄Ti₄O₁₅)_1-x(Bi₄Ti₃O₁₂)_x (CBT-xBIT) Aurivillius phase ceramics were synthesized by the conventional solid reaction method. The evolution of the structure and the electrical properties of CBT-xBIT ceramics were systematically investigated. Due to the enhanced spontaneous polarization induced by internal stresses on the Bi₂O₂ layers in the CBT-xBIT structure, the optimal piezoelectric coefficient (d₃₃ ~ 13?pC/N) was obtained in the ceramics with x?=?0.3 while exhibiting a relatively good thermal stability in the temperature range of 20–700?°C. The dc resistivity (ρ_dc) of the CBT-xBIT ceramics exhibited a higher value (≥?10⁹ Ω?cm) at room temperature, and the tan δ value of CBT-xBIT (x= 0, 0.1 and 0.3) within the temperature range of 20–500?°C maintained stability as a result of the domain structure and point defect concentration in the ceramics. In addition, a distinctive double dielectric peak anomaly was observed in the ε_r-T curves of the CBT-xBIT (x= 0.3, 0.5 and 0.7) ceramics, and it plays a remarkable role in the thermal stability of the piezoelectricity of CBT-xBIT ceramics. As a result, such research can benefit high temperature practical piezoelectric devices.     

Electrical properties of (Bi2O3)0.75(RE2O3)0.25 ceramics (RE=Dy, Y, Ho, Er and Yb)

Five kinds of rare earth stabilized bismuth oxide ceramics, (Bi₂O₃)_0.75(RE₂O₃)_0.25 (RE=Dy, Y, Ho, Er and Yb), were synthesized by sintering a mixture of Bi₂O₃ and RE₂O₃ at 900–1100 °C and their electrical properties were investigated. The bulk density and the lattice constant linearly increased with an increase in the atomic weight of RE and the ionic radius of RE³⁺, respectively. The electrical conductivity at 300 °C slightly increased with the increasing ionic radius of RE³⁺, while at 500 and 700 °C, it was constant regardless of the ionic radius of RE³⁺. The migration activation energy and the association activation energy showed a maximum value and a minimum value at RE=Er, respectively.     

Structure and electrical properties of Ca0.28Ba0.72Nb2O6 ceramics with addition of rare earth oxides (CeO2, La2O3)

Ca_0.28Ba_0.72Nb₂O₆ (CBN28) ceramics with addition of CeO₂ and La₂O₃, were prepared by the conventional ceramic fabrication technique. XRD results showed that the single tungsten bronze structure of CBN28 was not changed by adding CeO₂ or La₂O₃. SEM results indicated that both CeO₂ and La₂O₃ dopants were effective in inhibiting the grain growth and suppressing the anisotropic growth behavior in tungsten bronze structure. It was also found that both two kinds of dopants had remarkable effects on the dielectric and ferroelectric properties of CBN28 ceramics. Compared with CBN28 ceramics, the dielectric constant around room temperature ε_r, dielectric loss tan δ, the degree of diffuseness γ and coercive field E_c were all ameliorated when doping proper amount of CeO₂ or La₂O₃. The comprehensive electric performance was obtained in CBN28–0.3 wt% CeO₂ and CBN28–0.4 wt% La₂O₃ ceramics. Besides, the underlying mechanism for variations of the electrical properties due to different dopants was explained in this work.     

Thermoelectric properties of Bi2O3-added WO3 ceramics

Tungsten trioxide (WO₃) ceramics were prepared by firing Bi₂O₃-added WO₃ compacts with atomic ratios of Bi/W?=?0.00, 0.01, 0.03, or 0.05, in which Bi₂O₃ was mixed as a sintering agent. Dense ceramics consisting of remarkably grown WO₃ grains were obtained for Bi-containing samples with Bi/W?=?0.01, 0.03, and 0.05. The grain growth was enhanced by the liquid phase of Bi₂W₂O₉ formed among the WO₃ grains while firing. The XRD patterns did not show evidence for Bi inclusion into the WO₃ lattice, but the SEM-EDX showed an intensive distribution of Bi into the grain boundaries. Electrical conductivity σ and Seebeck coefficient S were measured in a temperature range of 373–1073?K. The temperature dependences indicated that the Bi₂O₃-added WO₃ ceramics were n-type semiconductors. It was considered that the electron carriers were generated from oxygen vacancies included into the WO₃ grains. The thermoelectric power factors S²σ for the ceramics ranged from 1.5?×?10^?7 W?m^?1 K^?2 to 2.8?×?10^?5 W?m^?1 K^?2, and the highest value occurred at 970?K for the ceramic with Bi/W?=?0.01.     

Sintering behavior and microwave dielectric properties of Bi2O3–ZnO–Nb2O5-based ceramics sintered under air and N2 atmosphere

The sintering behavior and dielectric properties of the monoclinic zirconolite-like structure compound Bi₂(Zn_1/3Nb_2/3)₂O₇ (BZN) and Bi₂(Zn_1/3Nb_2/3−xV_x)₂O₇ (BZNV, x = 0.001) sintered under air and N₂ atmosphere were investigated. The pure phase were obtained between 810 and 990 °C both for BZN and BZNV ceramics. The substitution of V₂O₅ and N₂ atmosphere accelerated the densification of ceramics slightly. The influences on microwave dielectric properties from different atmosphere were discussed in this work. The best microwave properties of BZN ceramics were obtained at 900 °C under N₂ atmosphere with _r = 76.1, Q = 850 and Q_f = 3260 GHz while the best properties of BZNV ceramics were got at 930 °C under air atmosphere with _r = 76.7, Q = 890 and Q_f = 3580 GHz. The temperature coefficient of resonant frequency τ_f was not obviously influenced by the different atmospheres. For BZN ceramics the τ_f was −79.8 ppm/°C while τ_f is −87.5 ppm/°C for BZNV ceramics.     

Investigation on the anti-reduction mechanism of Ti4+ in high dielectric constant system Ca0.9La0.067TiO3 by doping with Al2O3

Ca_0.9La_0.067TiO₃ (abbreviated as CLT) ceramics doped with different amount of Al₂O₃ were prepared via the solid state reaction method. The anti-reduction mechanism of Ti⁴⁺ in CLT ceramics was carefully investigated. X-ray diffraction (XRD) was used to analyze the phase composition and lattice structure. Meanwhile, the Rietveld method was taken to calculate the lattice parameters. X-ray photoelectron spectroscopy (XPS) was employed to study the valence variation of Ti ions in CLT ceramics without and with Al₂O₃. The results showed that Al³⁺ substituted for Ti⁴⁺ to form solid solution and the solid solubility limit of Al³⁺ is near 1.11 mol%. Furthermore, the reduction of Ti⁴⁺ in CLT ceramics was restrained by acceptor doping process and the Q × f values of CLT ceramics were improved significantly. The CLT ceramic doped with 1.11 mol% Al₂O₃ exhibited good microwave dielectric properties: ε_r = 141, Q × f = 6848 GHz, τ_f = 576 ppm/°C.     

Enhancement of Ca3Co4O9 thermoelectric properties by Cr for Co substitution

Ca₃Co_4−xCr_xO₉ polycristalline thermoelectric ceramics with small amounts of Cr have been synthesized by the classical solid state method. Microstructural characterizations have shown that all the Cr has been incorporated into the Ca₃Co₄O₉ structure and no Cr-containing secondary phases have been produced for Cr contents≤0.05. Apparent density measurements have shown that all samples are very similar, with densities around 75% of the theoretical one. Electrical resistivity decreases and Seebeck coefficient slightly raises when Cr content increases until 0.05 Cr addition. The improvement in both parameters leads to higher power factor values than the usually obtained by conventional solid state routes.     

Effects of sintering temperature and KBT content on microstructure and electrical properties of (Bi.5Na.5)TiO3-BaTiO3-(Bi.5K.5)TiO3 Pb-free ceramics

A route exploring the morphotropic phase boundaries (MPB) region in (Bi_.5Na_.5)TiO₃-BaTiO₃-(Bi_.5K_.5)TiO₃ ternary system has been designed based on the phase diagram. X-ray diffraction (XRD) has been performed to determine the phases of the prepared samples. The dielectric, ferroelectric, and piezoelectric properties of [(1-x) 0.9363(Bi_.5Na_.5)TiO₃–0.0637BaTiO₃]-x(Bi_.5K_.5)TiO₃ (BNKBT100x) ternary lead-free piezoelectric ceramics are investigated as the functions of x and sintering temperature. When x was varied from 0 to 0.11, the BNKBT100x ceramics show single perovskite structure sintered at 1130–1210?°C. These ceramics show large dielectric permittivity, small dielectric loss, and diffused phase transition behavior. Well-defined ferroelectric polarization-electric field (P-E) hysteresis loop and relative large piezoelectric and electromechanical coefficients are also found in these ceramics. When increasing x, the electrical performances first increase, then decrease. The same rule is found when varying the sintering temperature. The optimized composition and sintering temperature are finally obtained.     

Inversion boundary induced grain growth in TiO2 or Sb2O3 doped ZnO-based varistor ceramics

In low-voltage varistor ceramics, the phase equilibrium and the temperature of liquid-phase formation are defined by the TiO₂/Bi₂O₃ ratio. The selection of a composition with an appropriate TiO₂/Bi₂O₃ ratio and the correct heating rate is important for the processing of low-voltage varistor ceramics. The total amount of added Bi₂O₃ is important as the grain growth is slowed down by a larger amount of Bi₂O₃-rich liquid phase at the grain boundaries. Exaggerated grain growth in low-voltage varistor ceramics is related to the occurrence of the liquid phase and the presence of TiO₂ which triggers the formation of inversion boundaries (IBs) in only a limited number of grains, and as a result the final microstructure is coarse grained. The Zn₂TiO₄ spinel phase only affects grain growth in compositions with a TiO₂/Bi₂O₃ ratio higher than 1.5. In high-voltage varistor ceramics, just a small amounts of Sb₂O₃ trigger the formation of IBs in practically every ZnO grain, and in compositions with a Sb₂O₃/Bi₂O₃ ratio lower than 1, grain growth that is controlled entirely by an IBs-induced grain growth mechanism results in a fine-grained microstructure. The spinel phase interferes with the grain growth only at higher Sb₂O₃/Bi₂O₃ ratios.