简讯

简讯不锈钢化学抛光新工艺上海自动化仪表一厂新开发研制出的不锈钢锻件的化学白化抛光工艺，消除了硝酸、氢氟酸的污染，其抛光效果和质量均有明显提高，具有成本低、工艺简单、无污染、温度低、不易产生过腐蚀、出光速度快且效果好等特点。其工艺如下：硫酸１００～２０...     

铜及铜合金化学抛光

研究了铜及铜合化学抛光工艺，讨论了化学抛光液中酸的配比、酸雾抑制剂的使用、抛光时间、温度以及水洗过程对抛光效果的影响。试验表明，本抛光工艺取得了满意结果，是一种行有效的化学抛光方法。     

Q235钢中温无黄烟化学抛光工艺

低碳钢在双氧水系抛光液中化学抛光时,双氧水易分解,温度不易控制,而在硝酸系抛光液中化学抛光会产生黄烟且能耗较大。为此,研制了一种新型无黄烟低碳钢中温化学抛光液对Q235钢化学抛光,考察了化学抛光液组成及温度、时间对抛光质量的影响。结果表明:使用本工艺的化学抛光试样表面平整、粗糙度低,光亮度达3～4级;获得最佳抛光质量的化学抛光工艺为120～250mL/LH3PO4,100～200mL/LH2SO4,40～80g/LNaNO3,10～40g/LNaCl,20g/L复合添加剂,55～65℃,2～5min。     

H3PO4—H2SO4体系铝型材化学抛光研究

用反射光法和重量法研究了铝合金的抛光液中各组分和操作条件对抛光效果的影响，讨论了抛光机理，并得出了最佳溶液组成及操作条件。生产应用表明，该工艺具有光亮度高、反应温度低、无黄烟等优点，完全可以替代Ｈ３ＰＯ４－Ｈ２ＳＯ４－ＨＮＯ３体系铝合金的化学抛光。     

浅谈不锈钢化学抛光添加剂的选择

不锈钢制品以它特殊的性能和外观越来越得到认可和使用。但要获得高的性能和外观,必须通过特殊的工艺进行处理。不锈钢电解精抛光和化学抛光是其获得精美外观的首道工序,而化学抛光以其不受零件形状、体积限制,可以改变不锈钢制品机械损伤层和应力层,提高机械强度,成本低、效率高,表面精饰效果好等特点而受到人们的青睐。在不锈钢化学抛光过程中,添加剂作为抛光液中不可忽视的成分越来越受到大家的重视和研究。1 添加剂的作用和种类 添加剂有抑制腐蚀和增亮作用,可在不锈钢表面形成复杂的吸附层,活化零件表面微凸点、钝化微凹点,使抛光有效进行。它是抛光液的粘度调节剂、缓蚀剂、腐蚀剂、活化剂和消泡剂,由于它的存在,才使化学抛光平稳进行,达到表面精饰的效果。 在早期的化学抛光配方中,添加剂主要是一些盐类。许多无硝酸的抛光配方就是以无机盐和不挥发性酸类构成的。 添加剂的种类较多,一般包括无机盐、有机盐、有机化合物、表面活性剂等。无机盐类大部分是硫酸盐、磷酸盐、硝酸盐、醋酸     

钢铁零件化学抛光工艺简介

化学抛光的应用已有较长的历史,特别是对不锈钢、钨及铝合金等应用广泛,工艺技术也较为成熟.化学抛光对钢铁零件特别是对低碳钢有较好的抛光效果,对于一些机械抛光实施较为困难的钢铁零件,化学抛光工效高,成本低.其作为电镀前处理工序或抛光后辅以必要的防护措施而使用都有实际的意义.     

高硅铝合金无烟化学抛光剂的研制

目前以H3PO4、H2SO4为基础的两酸无烟化学抛光体系对高硅铝合金的抛光效果不理想。在磷酸+硫酸+双氧水的基础液中,添加一定量的硫酸铁、三氧化二铬以及过硫酸铵,考察了不同质量的添加物对6063高硅铝合金化学抛光效果的影响。采用简单正交试验方式,以试样的反光率及麻点数量表征试样的抛光效果,优选了较优的抛光液成分。结果表明:按硫酸(85%)10 m L、磷酸(95%)20 m L、双氧水2 m L、硫酸铁0.1 g、三氧化二铬0.1 g、过硫酸铵0.1 g配制的抛光液抛光效果最佳。     

高表面粗糙度6061铝合金的两酸抛光工艺研究

目的 为了降低6061铝合金的表面粗糙度,提出了一种环保型的两酸化学抛光工艺,并探究了抛光工艺条件对6061铝合金表面粗糙度和表面形貌的影响。方法 采用正交实验设计,确定6061铝合金两酸抛光添加剂的浓度,在此基础上通过单因素实验进一步对抛光液配方、温度和时间进行参数优化。通过粗糙度仪测量抛光前后的粗糙度和表面轮廓曲线,利用金相显微镜观察抛光前后的微观表面和断面金相,并且计算最佳工艺下的失重率。结果 在温度100 ℃、抛光10 min条件下,当抛光液的成分为H3PO4+H2SO4(质量比为2︰1)、10 g/L硫酸铝、2 g/L硫酸铜、1.6 g/L金属盐A、3 g/L氧化剂B、15 g/L过硫酸铵、1.5 g/L钼酸铵时,抛光效果最好。在最佳工艺下进行抛光,使铝合金表面粗糙度从6~8 µm降低至2 µm左右,粗糙度的标准差从2 µm左右降低至1 µm以下,失重率在0.002~0.004 g/(cm².min)范围内波动,并且得到了光亮的表面。结论 该抛光体系在处理高表面粗糙度的6061铝合金时表现出良好的抛光效果,研究结果对提高3D打印的6061铝合金零件表面质量提供了较好的借鉴与理论分析基础。     

3J1弹性合金的化学抛光工艺

研究了一种用于３Ｊ１弹性合金的化学抛光溶液。介绍了抛光工艺及影响抛光效果的因素。抛光的合金表面几乎可达到镜面光亮度。新溶液用于生产，效果较好。     

Mg2+、Cu2+对铝无烟化学抛光的协同效应

根据金属化学抛光的黏液膜或凹凸理论,在磷酸-硫酸基础液中加入组合添加剂,对工业纯铝进行无烟化学抛光,以改善抛光效果,并与传统三酸抛光效果进行对比.传统的无烟抛光剂中采用的Cu、Ni等重金属添加剂有利于氧化膜的生成,并具有明显的整平效果.抛光试验结果表明,当添加等量的Mg2 后,能够和cu2 发生协同效应,有利于抛光过程的进行,改善抛光质量.其最佳加入量为:1.2～1.8 g/L Cu2 Cu2 、Mg2 最佳比例为1:1.     

铝合金表面碱性化学抛光液组分的最佳浓度

铝合金碱性化学抛光效果较酸性抛光的差,为此,研究了低温下铝合金碱性化学抛光基础液及添加剂的最佳浓度。结果表明:以250g/L氢氧化钠、150g/L硝酸钠、15g/L硅酸钠、13g/L氟化钾为基础组分,分别加入30g/L硫脲、2g/L十二烷基硫酸钠、1.0g/L硫酸铜都可以使抛光效果得到提升,但加入30g/L硫脲效果更好,可以使铝合金抛光后的光泽度达到274 Gs,单位面积消耗量达0.01643kg/m~2。该工艺具有无污染、抛光光泽度高、操作简便等特点。     

Slurry particle size evolution during the polishing of optical glass

The particle size distribution of aqueous metal-oxide slurries can evolve during the polishing of optical glass in response to changes in mechanical and chemical process factors. The size-evolution phenomenon and its consequences were systematically studied in a planar continuous-polishing process. The concurrent application of electrokinetic techniques to characterize common optical shop materials has contributed new insight into the nature of silicate glass polishing by demonstrating the pivotal role of fluid chemistry, particularly pH, in maintaining electrokinetically favorable conditions for a welldispersed polishing agent. According to the proposed slurry-charge-control effect, a well-dispersed polishing agent is the key to obtaining the smoothest possible glass surfaces, especially when a recirculated slurry is used.     

LBO晶体的超精密加工工艺研究

采用Logitech PM5精密研抛机,通过机械抛光和化学机械抛光方法超精密加工LBO晶体;详细研究了LBO晶体的超精密加工工艺,并观察研磨和抛光等加工过程后的晶体表面形貌;研究抛光液和抛光垫在抛光中对LBO晶体表面微观形貌的影响.使用Wkyo激光干涉仪测量平面度,光学显微镜观察表面宏观损伤,原子力显微镜测量表面粗糙度和观察微观形貌.通过实验,实现高效率、高精度、高质量的LBO晶体的超精密加工,得到了LBO晶体的超精密加工工艺;超精密加工后晶体的表面粗糙度＜0.2nm RMS,表面平面度＜氇/10(氇=633nm),微观损伤少.     

摩擦化学反应活化能在SiO_2-CMP中的作用

基于摩擦化学反应动力学,在修正阿伦尼乌斯公式的基础上,建立了考虑摩擦效应在内的化学反应速率方程,并建立SiO2介质膜化学机械抛光总材料去除率模型;同时,通过浸泡、变温抛光试验确定了材料去除模型.研究结果表明,在化学机械抛光（CMP）过程中,因为反应速率对温度的依赖程度降低,摩擦产生的机械能除了部分转化为热能等其他形式的能,绝大部分直接转化为化学能,即直接降低了化学反应活化能,从而提高了反应速率;纯化学作用和纯机械作用在整个CMP去除量中所占比重很小,可以忽略不计;不同浓度通过对摩擦力和活化能降低量的影响,从而影响了温度和抛光效果的相关性,活化能降低量与摩擦力基本呈线性关系.     

Effect of slurry composition on the chemical mechanical polishing of thin diamond films

Nanocrystalline diamond (NCD) thin films grown by chemical vapour deposition have an intrinsic surface roughness, which hinders the development and performance of the films’ various applications. Traditional methods of diamond polishing are not effective on NCD thin films. Films either shatter due to the combination of wafer bow and high mechanical pressures or produce uneven surfaces, which has led to the adaptation of the chemical mechanical polishing (CMP) technique for NCD films. This process is poorly understood and in need of optimisation. To compare the effect of slurry composition and pH upon polishing rates, a series of NCD thin films have been polished for three hours using a Logitech Ltd. Tribo CMP System in conjunction with a polyester/polyurethane polishing cloth and six different slurries. The reduction in surface roughness was measured hourly using an atomic force microscope. The final surface chemistry was examined using X-ray photoelectron spectroscopy and a scanning electron microscope. It was found that of all the various properties of the slurries, including pH and composition, the particle size was the determining factor for the polishing rate. The smaller particles polishing at a greater rate than the larger ones.     

Effect of the Cd<Subscript>0.96</Subscript>Zn<Subscript>0.04</Subscript>Te substrate polishing procedure on Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Hg<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Te liquid phase epitaxy

This paper examines the effect of polishing procedure on the surface quality of Cd_0.96Zn_0.04Te substrates for Cd _x Hg_{1 − x} Te liquid phase epitaxy. Two polishing procedures are tested: stepwise polishing involving abrasive, chemomechanical, and chemical steps with the use of various abrasives, and abrasive-free polishing. The optimal procedure is chemomechanical polishing with no abrasives. The type of substrate surface can be identified using the Nakagawa etchant, which produces etch patterns in the form of triangles on the A(111) surface and circles on the B(111) surface.     

铝及铝合金焊丝化学抛光工艺

为了提高焊丝化学抛光后的表面光亮度和焊接性能,获得高质量的焊缝并降低化学抛光成本,采用正交试验法对原有抛光液的配方和工艺参数及添加剂各成分的作用机理进行了探讨,并对抛光液配方作了相应的改进,从而获得一种成本较低的化学抛光液配方.此化学抛光工艺设备投资小,抛光液价格低、寿命长,生产成本低.     

铝化学机械抛光中1,2,4-三唑和苯并三氮唑的缓蚀机制

揭示铝低压力化学机械抛光(CMP)中的弱缓蚀机制是铝CMP研究的关键问题。采用CMP试验,研究了1,2,4-三唑(TAZ)和苯并三氮唑(BTA)对铝表面去除率的影响规律;通过接触角和表面原子力显微镜(AFM)试验,分析了TAZ和BTA薄膜在铝表面的亲水性能,发现由TAZ作用形成的缓蚀薄膜比由BTA形成的缓蚀薄膜更厚,更易渗透与去除。结合摩擦磨损试验和Arrhenius公式,探讨了TAZ和BTA在CMP过程中对铝表面化学反应活化能的影响。结果显示:TAZ的活化能小于BTA,更容易形成弱缓蚀薄膜,机械促进化学作用的效果更明显。     

不锈钢表面处理:酸洗、钝化与抛光

介绍了近年来开发的部分不锈钢产品的酸洗、钝化及机械抛光、化学抛光、电化学抛光工艺,针对不同的不锈钢牌号及零件规格,给出了相应的表面处理配方及工艺方案。     

Investigation of pad staining and its effect on removal rate in copper chemical mechanical planarization

In copper chemical mechanical planarization process, stains are often generated on the pad surface due to the build-up of polishing by-products. Pad staining is a major concern because it might affect defect, non-uniformity across the wafer, and removal rate variation during polishing. In this study, the characteristics of stains formed on an IC1000 XY grooved pad obtained under various polishing conditions were investigated. In addition, wafers were polished on an IC1000 plain pad to determine the effect of hydrodynamic pressure on staining pattern. Experiments were performed on a table-top axisymmetric polishing system consisting of a 300-mm non-rotating platen and 100-mm rotating wafers. Stains were successfully generated on the pad surface and X-ray photoelectron spectroscopy (XPS) analysis confirmed that the stains contained copper polishing by-products. As the stains deposited on the pad land areas were darker in the direction of wafer rotation as well as in the pad radial direction, it was believed that staining agents were produced during polishing and subsequently advected downstream by the slurry flow. Although staining increased with polishing pressure, wafer rotation rate, polishing time and slurry flow rate, it did not seem to affect removal rate. The white light interferometric analysis indicated that the stains did not physically change the pad surface topography. It was observed that the hydrodynamic pressure significantly impacted the staining pattern on an IC1000 plain pad.