MnO_2掺杂BaTi_4O_9陶瓷微波介电性能研究

采用传统固相反应法合成BaTi_4O_9粉体,复合掺杂质量分数为0~0.16%MnO_2,在空气气氛下常压烧结制备BaTi_4O_9陶瓷。研究了MnO_2对BaTi_4O_9陶瓷的相组成、微观形貌、烧结特性及介电性能的影响。X射线衍射分析和扫描电子显微镜观察表明,Mn完全固溶到BaTi_4O_9陶瓷中;随着MnO_2掺杂量的增加,晶粒更加均匀,BaTi_4O_9陶瓷更加致密,介电常数略微降低,品质因数和谐振频率温度系数先显著提高继而降低;MnO_2掺杂BaTi_4O_9陶瓷发生Ti位取代,高温烧结时在一定程度上抑制了Ti~(4+)还原为Ti~(3+),从而改善BaTi_4O_9陶瓷微波介电性能。在烧结温度1250℃,保温时间4 h,掺杂MnO_2质量分数为0.08%时,BaTi_4O_9陶瓷微波介电性能最优,介电常数(εr)为34.56,品质因数(Q·f,中心频率5 GHz)为49097,谐振频率温度系数(τ_f)为14.997×10~(-6)/℃,相对密度最大,达97%。     

ZnO-B_2O_3掺杂陶瓷的微观结构和微波介电性能

研究了ZnO-B_2O_3(ZB_2)对(Ca_(0.254)Li_(0.19)Sm_(0.14))TiO_3陶瓷的烧结行为和微波介电性能的影响。结果表明:ZnO-B_2O_3添加质量分数为3%时,试样的相对密度达到最大值;烧结温度从1 300℃降低到1 100℃时,试样的微波介电性能没有衰减。添加3%ZB_2(质量分数)的(Ca_(0.254)Li_(0.19)Sm_(0.14))TiO_3陶瓷在1 100℃烧结3 h呈现出较好的微波介电性能,介电常数ε_r=108.2,品质因数Q_f=6 545 GHz,共振频率温度系数τf=6.5×10~(-6)/℃,表明ZB_2是一种有效改善(Ca_(0.254)Li_(0.19)Sm_(0.14))TiO_3陶瓷致密性和微波介电性能的烧结助剂。     

掺杂不同质量分数Y_2O_3、MgO对Al_2O_3陶瓷显微结构及介电性能的影响

利用放电等离子烧结技术制备了不同质量分数Y_2O_3单独掺杂及不同质量分数Y_2O_3、MgO共同掺杂的Al_2O_3陶瓷,研究了烧结助剂掺杂质量分数对Al_2O_3陶瓷显微结构及介电性能的影响。结果表明,孔隙率是影响Al_2O_3陶瓷介电性能的主要因素;单独掺杂质量分数为0.25% Y_2O_3时,Al_2O_3陶瓷得到最优的介电性能,介电常数(ε_r)为9.5±0.2,介质损耗(tanδ)稳定在10~(-3)数量级以内;同时掺杂Y_2O_3和MgO能进一步改善其介电性能,当两者质量分数均为0.25%时,得到最优值,介电常数(ε_r)为10.3±0.2,介质损耗(tanδ)稳定在8×10~(-4)以下。     

Effects of Rare-Earth La2O3 Addition on Microstructures and Electrical Properties of SrTiO3 Varistor-Capacitor Dual Functional Ceramics

Generally, metal oxide varistors used for the pro tection of electrical circuits are based on ZnO andTiO2[1,2]. ZnO varistor, which is widely used due toits high non linearity coefficient, is composed of ZnOceramics with minor oxide additive…     

Study on BaO-Sm2O3-TiO2 Microwave Dielectric Ceramics Doped with Bismuth and Zinc

BaO-Sm2O3-TiO2 microwave dielectric ceramics doped with Bi and Zn was studied. The experiment was based on BST microwave dielectric ceramics doped with Bi2O3, which is shown by Ba4(Sm1-yBiy)28/3Ti18O54. When y=0.15, ZnO was added and the effects of ZnO on this system were studied. The result shows that the dielectric characteristics of BST microwave dielectric ceramics are the most excellent when the content of ZnO is 3%, and the optimal sintering temperature is 1200 ℃.     

Dielectric Properties of CeO2 -Doped Ba( Zr, Ti)O3 Ceramics

The influence of additive amount of CeO2 on the properties of Ba(Ti, Zr)O3 (BTZ) capacitor ceramics prepared using conventional solid-state reaction method was investigated. The dielectric constant(ε) increases to a maximum when w( CeO2 ) is about 1.0% and then decreases again at higher doping concentration of CeO2. The dielectric constant gets a maximum while w ( CeO2 ) is about 1. 0%, and the dielectric loss is minimum while w ( CeO2 ) is0.5 %. CeO2 can decrease the curie temperature, widen the εr-T peak and decrease the absolute value of dielectric constant temperature coefficient. The influence mechanism of CeO2 additive on the properties of the BTZ ceramics was discussed. The results show that CeO2 additive influences the properties of BTZ ceramics by means of forming defect solid solution , shifting curie temperature peak effect, segregating in crystal boundary , and impeding grain growth.     

Effect of Gd2O3 and La2O3 on BaTiO3 -Based Ceramics

The addition of rare-earth oxides Gd2O3 and La2O3 to BaTiO3-based ceramics can restrain the growth of grain size, which obtained small grain size below 1 μm and high density. The dielectric constant at room temperature increased and the curve of ε-T was flattened which illustrated that the ferroelectricity of BaTiO3-based ceramics was weakened. In addition, it is illustrated that Gd2O3 leads to chemical nonhomogeneous property, i.e. core-shell structure and La2 O3 leads to chemical homogenous property, which take different effects on capacitance- temperature characteristic.     

Properties of La2O3-Doped PNSZT Piezoelectric Ceramics Having Tetragonal and Rhombohedral Coexistent Phases

The relationship between composition and the electric mechanical properties for La2O3-doped lead niobium stibium zirconate titanate(La2O3-doped PNSZT) piezoelectric ceramics,in which there are tetragonal and rhombohedral coexistent phases, was studied. A series of piezoelectric ceramics with good properties was obtained, having dielectric constants(ε=1500～2500), plane electromechanical coupling factor(Kp=0.45～0.65), mechanical quality factor(Qm=500～1600). These materials are used for making ultrasonic sensor and filter, and marine acoustic launching and receiving device, and so on. It has been explored that the influence of composition on the lattice constant and phase composition of La2O3-doped PNSZT piezoelectric ceramics by XRD(X-ray diffraction). The character of dielectric constant changing of La2O3-doped PNSZT piezoelectric ceramics before polarization and after polarization was studied. The affecting mechanism about composition on the electric machine properties of phase coexistent La2O3-doped PNSZT piezoelectric ceramics was analyzed and discussed.     

Effect of Gadolinium Substitution on Dielectric Properties of Bismuth Ferrite

Multiferroic Bi1-xGdxFeO3(x=0, 0.05, 0.1, 0.15, 0.2) ceramics were prepared by conventional solid state reaction method. X-ray diffraction was carried out to characterize the crystal structure and to detect any possible impurities existing in these ceramics. Frequency dependence of dielectric properties of Bi1-xGdxFeO3 samples at room temperature was measured in a frequency range from 100 Hz to 1 MHz using an HP4294A precision impedance analyzer. For all the samples studied, the dielectric constant and dielectric loss decreases with increasing frequency in the range between 100 Hz and 1 MHz, as can be expected from a typical orientational dielectric relaxation process. There is no indication of any dips over the whole frequency range studied, which is in direct contrast with that reported previously. It is found that both dielectric constant and dielectric loss are strongly dependent on the Gd3+ content. The effect of introducing Gd3+ is to increase the dielectric constant and to decrease the dielectric loss for slightly doped sample Bi0.95Gd0.05FeO3: the dielectric constant of the sample at 1 kHz reaches 600, six times bigger than that for pure BiFeO3. Complicated dielectric behaviors are observed at higher doping levels. Furthermore, the substitution of rare earth Gd for Bi helps to eliminate the impurity phase in BiFeO3 ceramics. There is strong evidence that both lattice constants a and c of the unit cell become smaller as the Gd3+ content is increased. The dielectric constant and loss and their frequency responses can be varied dramatically by substitution of Gd.     

Ca/Zr协同置换对CaSmAlO4基陶瓷显微结构与微波介电性能的影响

通过传统固相合成法成功制备了层状钙钛矿结构Ca_1+xSm_1?xAl_1?xZr_xO₄（x=0.1，0.2，0.3，0.4）微波陶瓷。利用X射线衍射、拉曼光谱、电子背散射衍射、能谱及矢量网络分析表征了Ca/Zr协同置换对微波陶瓷材料晶体结构、微观形貌及介电性能的影响。结果表明，随着x值的增加，晶胞参数（a、c）和晶胞体积（V_cell）增大，理论极化率（α_theo）增加，进而导致了介电常数（ε_r）和谐振频率温度系数（τ_f）增大；协同置换引入的适量CaO第二相有利于品质因子（Q×f）的提高。当x=0.2时，Ca_1.2Sm_0.8Al_0.8Zr_0.2O₄陶瓷呈现出良好的微波性能，介电常数为20.16，品质因子为72489，谐振频率温度系数为?3.46×10?6·℃?1。     

Study on BSTO/MgO Ferroelectric Materials for Phase Shift Doped with Rare Earth Oxides

Phasedarrayantennascansteerthetransmitted orreceivedsignalswiththeadvantagesoffastscan ning,multipletargetstrackingandgoodanti jam ming.Theseantennasarecurrentlyconstructedusing ferritephaseshiftingelements,whicharecostly,large andheavy.Therefore,theirmil…     

氧化物添加对BaO-TiO2-Al2O3-SiO2玻璃陶瓷介电性能的影响

采用烧结法制备工艺,成功制备了BaO-TiO₂-Al₂O₃-SiO₂玻璃陶瓷,以钛酸钡体系玻璃陶瓷为基础成分添加不同种类氧化物(Y2O3,Ni2O3,ZrO2),并采用X射线衍射(XRD),场发射扫描电镜(FESEM),精密阻抗分析仪测试仪(LCR)对添加不同氧化物玻璃陶瓷样品的析出相成分、微观结构和介电性能进行表征,研究了氧化物添加对BaO-TiO₂-Al₂O₃-SiO₂玻璃陶瓷性能的影响。研究结果表明:添加不同的氧化物并未改变BaO-TiO₂-Al₂O₃-SiO₂玻璃陶瓷的析出相种类,但能够促进基体中钙钛矿结构钛酸钡结晶相的生成。同时添加不同氧化物后样品的致密度均随烧结温度的升高呈现先增大后减小的变化趋势,在最适烧结温度下,氧化物的添加提高了不同烧结玻璃陶瓷样品的致密度,并优化了样品的介电性能。通过添加不同种类氧化物获得了同时具有高致密度和良好介电性能的玻璃陶瓷成分,当添加0.5%(质量分数)Ni₂O₃时,样品在最佳烧结温度1230°C下烧结获得最大致密度为98.6%,提高了1.65%,样品室温下的介电常数高达1100,提高了139.5%。     

CuTa_2O_6掺杂Ba(Zn_(1/3)Ta_(2/3))O_3基微波陶瓷烧结动力学及微波性能

结合烧结动力学模型和微观形貌观察,研究未掺杂和掺杂CuTa_2O_6的Ba(Zn_(1/3)Ta_(2/3))O_3陶瓷在1 270~1 520℃温度范围内的致密化过程和烧结动力学机理。结果表明:在1 150℃以上烧结,随温度升高,Ba(Zn_(1/3)Ta_(2/3))O_3的烧结机制从体积扩散向晶界扩散转变。掺杂0.25%CuTa_2O_6可显著加快Ba(Zn_(1/3)Ta_(2/3))O_3陶瓷的烧结致密化过程,在显著降低烧结温度的同时,可大幅缩短烧结时间并有效地促进B位的有序化。掺杂Ba(Zn_(1/3)Ta_(2/3))O_3陶瓷在1370℃烧结12h即可获得96%的相对密度,在1 370℃烧结12 h后的介电常数(εr)和品质因数(Q·f)分别约为29.4和985 35;相比较,未掺杂Ba(Zn_(1/3)Ta_(2/3))O_3在1 520℃烧结12 h的εr和Q·f分别只有27.4和68 147。掺杂Ba(Zn_(1/3)Ta_(2/3))O_3陶瓷经1 520℃烧结48 h的εr和Q·f分别约为28.2和103 131。     

Microwave dielectric properties of Ba6-3xLa8+2x(Ti1-zZrz)18O54(x=2/3)ceramics

Zr substitution for Ti was investigated to modify the dielectric properties of Ba6-3xLa8+2xTi18O54(x=2/3) ceramics.A single-phase solid solution with tungstenbronze-like structure was formed in the range of 0     

MNb2O6-NaNbO3-SiO2(M=Pb,Ba,Sr)体系玻璃陶瓷纳米复合材料的结构和介电性能研究

应用铸造快冷及可控结晶技术制备3种玻璃陶瓷纳米复合介电材料——PbNb2O6 +NaNbO3 +SiO2 (PNS),BaNb2O6+ NaNbO3+ SiO2 (BNS)和SrNb2O6+ NaNbO3+ SiO2( SNS).研究了这3种复合材料的结晶性能,微观形貌和介电性能.X射线衍射(XRD)的分析结果显示:PNS及SNS的玻璃在750℃可控结晶时,均形成中间相A2Nb2O-7(A=Pb,Sr),且该中间相在850℃时消失,此时形成MNb2O6+NaNbO3(M=Pb,Sr)的高介电常数相,而BNS则未经过中间相,在750℃直接析出MNb2O6+NaNbO3(M=Ba)的高介电常数相.在所有的样品中,随着退火温度的升高,晶粒均有逐渐长大聚集的趋势.同时,SNS玻璃陶瓷在750℃及850℃结晶退火处理时,均析出枝状晶粒,异于PNS和BNS的球状晶粒.由可控结晶技术制备的玻璃陶瓷介电性能受热处理过程中所形成的介电相组成及其体积分数和晶粒尺寸的影响很大.分析测试了这3种体系玻璃陶瓷的介电常数与结晶化处理温度之间的关系及介电常数的电场稳定性.在900℃结晶退火时,PNS玻璃陶瓷具有最高的介电常数( ～501,1 kHz),而BNS的介电常数在0～15 kV ·mm-1的测试范围内具有最好的电场稳定性(＜15％).     

Rare earth doped CaCu_3Ti_4O_(12) electronic ceramics for high frequency applications

Ca1-xRxCu3Ti4O12(R=La,Y,Gd;x=0,0.1,0.2,0.3) electronic ceramics were fabricated by conventional solid-state reaction method.The microstructure and dielectric properties as well as impedance behavior were carefully investigated.XRD results showed that the secondary phases with the general formula R2Ti2O7 existed at grain boundaries of rare earth doped ceramics,which inhibited abnormal grain growth.The dielectric constant decreased from 4×105 in pure CaCu3Ti4O12(CCTO) ceramics to 2×103 with rare earth doping.However,all samples showed high dielectric constant in broad frequency range(10 MHz).The cutoff frequency(f0) was remarkably shifted to higher frequency from 13 MHz(pure CCTO ceramics) to 80 MHz(Gd-doped CCTO ceramics).Meanwhile,the dielectric loss tangent rapidly decreased approximately 10 times.These improvements of dielectric properties by rare earth doping are very useful in wide frequency chip capacitor and LTCC devices.     

不同方式引入CuO制备低温烧结(Bi1.5Zn0.5)(Zn0.5Nb1.5)O7陶瓷

以Bi₂O₃、ZnO和Nb₂O₅为原料,采用传统固相反应法制备（Bi_1.5Zn_0.5）（Zn_0.5Nb_1.5）O₇（BZN）陶瓷。通过CuO包覆层修饰BZN粉体表面,引入CuO助烧剂代替直接混合BZN和CuO粉体。以CuSO₄溶液为先驱体制备CuO包覆层,采用液相包覆法引入助烧剂可减少CuO的添加量,从而降低CuO对BZN陶瓷介电性能的不良影响。结果表明,当CuSO₄溶液浓度为0.5 mol/L时,可以促进陶瓷的烧结和致密化过程,经900℃烧结3 h所得BZN陶瓷介电性能最佳,介电常数（ε_r）为141,品质因数值（Q_f）为426 GHz,谐振频率温度系数（τ_f）为—357×10-6/℃（4 GHz）,皆优于固相混合法所得介电性能（介电常数为134,品质因数为287 GHz,谐振频率温度系数为—374×10-6/℃（4 GHz））。     

氧化钆对钛酸钡陶瓷结构和介电性能的影响

采用固相法制备得到了掺杂 1% (mol) Gd2 O3的钛酸钡陶瓷 ,并通过 X射线衍射分析和扫描电镜对其结构进行了表征。对其介电常数、介电损耗和室温电阻率进行了测定 ,结果表明 Gd2 O3掺杂 Ba Ti O3陶瓷的介电常数明显增加 ,介电损耗也有所升高 ,室温电阻率明显降低     

La_2O_3掺杂对V_2O_5-WO_3/TiO_2催化剂SCR性能的影响

通过共沉淀法将La组分掺入到TiO_2载体中,采用浸渍法将V和W组分负载到La_2O_3-TiO_2复合氧化物上,制备出V2O5-WO3/La_2O_3-TiO_2催化剂。考察不同La_2O_3掺杂量对其NH3催化还原NO性能的影响,同时通过多种物理化学手段进行表征分析。XRD,NH_3-in situ DRIFTS,H_2-TPR,XPS和UV-vis DRS测试结果表明,元素La与Ti以La-O-Ti键相互作用,生成高度分散的镧物种,也使得TiO_2具有更好的热稳定性,但由于LaO_x物种与VO_x物种和WO_x物种之间的相互作用,降低了催化剂的氧化还原性和表面Brnsted酸数量,从而降低了其催化活性。     

氧化镧掺杂TiO2纳米管的制备及光催化性能研究

用水热合成法制备了掺镧的TiO2纳米管。以甲基橙作为脱色对象,对掺镧TiO2纳米管、掺镧TiO2纳米粉末、TiO2纳米管的光催化进行现象对比研究,其中掺镧的TiO2纳米管催化活性最高,以TEM、XRD、BET等分析手段对其进行了表征,并对结果进行了分析与讨论。