ZrB2增韧Al2O3陶瓷制备工艺及其对复相陶瓷力学性能影响

Al₂O₃陶瓷因具有很高的强度和耐蚀性受到广泛关注。但由于相对较差的韧性限制了其广泛应用。Al₂O₃陶瓷增韧的方式很多,本文采用微米ZrB₂来增韧氧化铝陶瓷,探讨复相陶瓷烧结工艺,并研究工艺参数对复相陶瓷力学性能及韧性的影响。结果表明：采用单因素法得到两种陶瓷最佳工艺参数分别是纯α-Al₂O₃陶瓷烧结温度为1500℃,成型压力为450MPa,保温时间为8h,球料比为1/2,保压时间为10min;ZrB₂(wt,20%)+α-Al₂O₃ (wt,80%)复相陶瓷烧结温度为1450℃,成型压力为450MPa,保温时间为8h,球料比为1/2,保压时间为10min。其中成型压力、烧结温度和保温时间对复相陶瓷硬度及致密度影响最大。ZrB₂的加入,在降低陶瓷烧结温度的同时,可以将纯α-Al₂O₃陶瓷的断裂韧性由5.2±0.3MPa.m^_1/2提高到6.7±0.2MPa.m^_1/2。     

三元共晶成分Al2O3/YAG/ZrO2粉体及陶瓷的制备与组织性能研究

本文采用醇水共沉淀法制备了三元共晶成分Al₂O₃/YAG/ZrO₂粉体,在600-1350_oC温度范围煅烧后研究其物相转变过程。经1300_oC煅烧后Al₂O₃/YAG/ZrO₂共晶成分粉体的物相由α-Al₂O₃、c-ZrO₂和YAG构成,且具有α-Al₂O₃相包裹c-ZrO₂相的特殊结构。将煅烧粉体在1550_oC下热压烧结,制备具有内晶型结构的共晶成分Al₂O₃/YAG/ZrO₂复相陶瓷,其致密度、室温抗弯强度、断裂韧性和高温(1000_oC)抗弯强度分别为98.8%、420 MPa、3.69 MPa.m_1/2和464 MPa,并对复相陶瓷组织结构的形成机理进行了探讨。     

基于第一性原理的石榴石型Li7La3Zr2O12 固态电解质的设计与合成

基于密度泛函理论（DFT）的第一原理方法计算了四方相和立方相中2种不同的Li₇La₃Zr₂O₁₂（LLZO）固体电解质材料的能带结构,晶格参数,态密度和成键特性。基于理论计算结果,通过电子结构特性解释了四面体相的离子电导率低于立方相的离子电导率的原因。基于LLZO的第一性原理计算,设计了2种晶体结构的LLZO材料,并通过高温固相法制备并分析了不同烧结时间的LLZO颗粒的性能。探索了合成工艺参数对Li₇La₃Zr₂O₁₂性能的影响。立方晶Li₇La₃Zr₂O₁₂（C-LLZO）的平均晶格大小为a=b=c=1.302 246 nm,而四方Li₇La₃Zr₂O₁₂（T-LLZO）的平均晶格大小为a=b=1.313 064 nm,c=1.266 024 nm。在1000 ℃下烧结12 h的C-LLZO为纯立方相,在室温（25 ℃）下最大离子电导率为9.8×10^-5 S·cm^-1。T-LLZO在室温（25 ℃）下的离子电导率为5.96×10^-8 S·cm^-1,在800 ℃下烧结6 h具有纯的四方相结构,与计算结果基本吻合。     

液相对ZnO陶瓷放电等离子体烧结过程的影响

本文采用放电等离子体烧结技术制备了ZnO陶瓷,主要研究了液相(醋酸溶液)的添加对烧结过程的影响。结果表明,通过对初始粉料添加微量的2 mol/L的醋酸溶液,在等离子体烧结过程中,ZnO陶瓷试样在52 _^oC开始收缩,115 _^oC开始致密化,160 _^oC致密度可达95%以上,200 _^oC度即可完成致密化。在250 ℃烧结5 min后,晶粒尺寸从初始粉体的200 nm增长到600 nm。X衍射结果表明,在液相辅助等离子烧结过程中,ZnO陶瓷中未出现明显杂相,并且晶粒生长表现出沿外施压力垂直的方向取向生长。通过计算发现液相辅助等离子体烧结ZnO陶瓷,其晶粒生长活化能仅为78.8 kJ/mol,约为传统高温烧结的三分之一。ZnO陶瓷试样的室温阻抗结果表明,晶界阻抗随烧结温度的升高而下降,从120 _^oC烧结试样的9.82×10_⁶ W下降到250 _^oC烧结试样的2.75×10_³ W。     

B含量对Fe90-xPt10Bx液态急冷合金组织结构和磁性能的影响

本工作研究了低Pt含量的Fe_90-xPt₁₀B_x (x=15~40,原子分数,%)系液态急冷合金热处理前后的组织结构和磁性能。结果表明,x由15增加至25~30可提高合金的非晶形成能力,急冷合金由非晶+fcc-FePt复相组织转变为单一非晶态结构;当x进一步增加至35和40时,合金分别由fcc-FePt+Fe₂B+FeB和L1₀-FePt+FeB纳米复相组织构成。经适当热处理后,x=15~20的合金具有fcc-FePt+Fe₂B复相组织而呈软磁性;x=25~40的合金形成了由有序面心四方结构的永磁L1₀-FePt相和软磁Fe₂B/FeB组成的纳米复相组织,显示出永磁特性,其中x=30的合金经823 K热处理900 s后具有最佳的永磁性能,矫顽力、剩磁和最大磁能积分别为173.2 kA/m,1.20 T和88.3 kJ/m^₃,其优异的永磁性能源于分布均匀、平均晶粒尺寸约为15 nm的永磁L1₀-FePt相和软磁Fe₂B相间的交换耦合作用。     

0.74BiFe1- x Ga x O3-0.26BaTiO3 高温无铅压电陶瓷的相变行为及电性能

准同型相界（MPB）对提升压电陶瓷的压电性能具有重要的作用。BiFeO₃-BaTiO₃体系的准同型相界通常位于0.70BiFeO₃-0.30BaTiO₃组分附近。然而，对于BiFeO₃-BaTiO₃体系，BaTiO₃含量越高其居里温度越低。因此，在较低的BaTiO₃含量组分附近构建准同型相界是使其同时获得良好的压电活性和高居里温度的有效策略。采用固相法制备了0.74BiFe_1-xGa_xO₃-0.26BaTiO₃（x=0~0.05）系列无铅压电陶瓷，研究了Ga含量对其物相结构与电性能的影响。结果表明：随着Ga含量的增加，陶瓷样品从三方相逐渐向赝立方相转变。当x≤0.01，陶瓷样品为三方相结构；而当0.04≤x≤0.05，陶瓷样品为赝立方结构，在0.02≤x≤0.03形成了准同型相界（三方-赝立方）。另外，由于容忍因子的升高，该系列陶瓷的居里温度随着Ga含量的增加而略有降低。位于准同型附近的陶瓷样品表现出良好的压电活性和较高的居里温度。     

298 K下离子液体BMIMPF6 中电沉积制备镧金属薄膜

以无水硝酸镧、1-丁基-3-甲基咪唑六氟磷酸（BMIMPF₆）和助溶剂丙酮为电解液,在室温（298 K）下电沉积制得镧金属薄膜。电解液BMIMPF₆的电化学窗口为-2.5~1.5 V vs. Pt,La³⁺还原为La²⁺发生于-1.7 V vs. Pt,La²⁺还原为La⁰发生于-2.1 V vs. Pt。BMIMPF₆的低吸湿性有利于在空气气氛下电沉积镧。使用扫描电子显微镜和光学显微镜观察到所制备的薄膜织构致密,经能量色散谱和X射线光电子能谱对沉积薄膜进行了表征,确定了薄膜中含有大量镧元素。通过探究电压扫描速率和硝酸镧浓度对La³⁺的电化学行为的影响,证明La³⁺的还原反应是一个受物质扩散控制的不可逆过程,La³⁺在BMIMPF₆中的扩散系数为1.47×10^-9 cm²·s^-1。本研究为获得金属镧薄膜和镧氧化物薄膜提供了一种简便的方法,并且有望用于电沉积制备其它镧系元素薄膜。     

激光热喷涂Co30Cr8W1.6C3Ni1.4Si涂层在PAO+2.5%MoDTC油中摩擦学特性

为了提高TC4合金的耐磨性能,采用激光热喷涂技术在其表面制备了Co₃₀Cr₈W_1.6C₃Ni_1.4Si涂层。通过扫描电子显微镜（SEM）和X射线衍射（XRD）分析了涂层的形貌和物相,并通过摩擦磨损实验研究了涂层在PAO+2.5% MoDTC（质量分数）油中的磨损行为。结果表明,激光热喷涂的Co₃₀Cr₈W_1.6C₃Ni_1.4Si涂层主要由Ti、WC_1-x、CoO、Co₂Ti₄O和CoAl相组成,在涂层界面形成冶金结合。在激光功率为1000、1200和1400 W时所制备的涂层平均摩擦因数分别为0.151、0.120和0.171,其对应的磨损率分别为1.17×10^-6、1.33×10^-6和2.80×10^-6 mm³?N^-1?m^-1,磨损机理为磨粒磨损,其枝晶尺寸对降磨起主要作用。     

Ba(Mg1/3Ta2/3)O3热障涂层的制备及抗热震性能研究

本文以BaCO₃、MgO、Ta₂O₅为原料,采用固相反应法合成了Ba(Mg_1/3Ta_2/3)O₃(简称BMT)陶瓷粉末,利用大气等离子喷涂技术制备了BMT/YSZ双层陶瓷涂层。利用XRD、SEM和金相显微镜检测了BMT粉体及涂层的物相组成和显微结构。采用水淬法考核了涂层的抗热震性能。结果表明：1450℃下煅烧4h可合成出具有复合钙钛矿结构的BMT粉末,粉末具有良好的高温相结构稳定性。等离子喷涂制备的BMT/YSZ涂层组织致密,涂层系统中各界面结合紧密。涂层在室温至1150℃间热震9次后发生片状剥落,剥落位置位于BMT层间,BMT材料低的断裂韧性和第二相Ba₃Ta₅O₁₅的存在是导致涂层失效的主要原因。     

放电等离子烧结WMoNbTaV-Al2O3 高熵合金组织及磨损性能

以金属粉末为原料,采用放电等离子烧结技术制备新型含α-Al₂O₃的WMoNbTaV难熔高熵合金,研究了烧结温度对合金致密化行为、相结构、显微组织和耐磨性能的影响。结果表明：在1800~1900 ℃烧结时,WMoNbTaV-Al₂O₃高熵合金基体具有单一bcc相结构,Al₂O₃的平均晶粒尺寸为1.15 μm。随着烧结温度升高,合金的晶粒尺寸增大,致密度和显微硬度也在不断增高,在1900 ℃烧结时硬度达到7967.4 MPa。1900 ℃烧结得到的合金具有优异的耐磨性,磨损量仅为1800 ℃烧结合金的一半。且WMoNbTaV-Al₂O₃高熵合金的耐磨性远高于纯W材料。当磨料粒度为37.5 μm时,1900 ℃烧结的合金磨损量为0.9 mg,磨损性能是纯W材料的83倍。     

High permittivity and low dielectric loss of the Ca1−xSrxCu3Ti4O12 ceramics

The Ca_1−xSr_xCu₃Ti₄O₁₂ (CSCTO) giant dielectric ceramics were prepared by conventional solid-state method. X-ray diffraction patterns revealed that a small amount of Sr²⁺ (x < 0.2) had no obvious effect on the phase structure of the CSCTO ceramics, while with increasing the Sr²⁺ content, a second phase of SrTiO₃ appeared. Electrical properties of CSCTO ceramics greatly depended on the Sr²⁺ content. The Ca_0.9Sr_0.1Cu₃Ti₄O₁₂ ceramics exhibited a higher permittivity (71,153) and lower dielectric loss (0.022) when measured at 1 kHz at room temperature. The ceramics also performed good temperature stability in the temperature range from −50 °C to 100 °C at 1 kHz. By impedance spectroscopy analysis, all compounds were found to be electrically heterogeneous, showing semiconducting grains and insulating grain boundaries. The grain resistance was 1.28 Ω and the grain boundary resistance was 1.31 × 10⁵ Ω. All the results indicated that the Ca_0.9Sr_0.1Cu₃Ti₄O₁₂ ceramics were very promising materials with higher permittivity for practical applications.     

Simple hydrothermal synthesis and sintering of Na0.5Bi0.5TiO3 nanowires

Single-crystalline Na_0.5Bi_0.5TiO₃ (NBT) nanowires, with diameters of 100 nm and lengths of about 4 μm, were synthesized by using a simple hydrothermal method. Phase composition, morphology and microstructure of the as-prepared powders were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscope (TEM). The effects of reaction temperature and reaction time on precipitation of the NBT nanowires were investigated. It was found that reaction time significantly influenced the growth behavior of the powders in the hydrothermal system. Based on the experimental results, the one-dimensional (1D) growth mechanism of the NBT was governed by a dissolution-recrystallization mechanism. NBT ceramics derived from the nanowires showed typical characteristics of relaxor ferroelectrics, with diffuseness exponent γ of as high as 1.73.     

Multiferroic and magnetoelectric properties of single-phase Bi0.85La0.1Ho0.05FeO3 ceramics

Single-phase Bi_0.85La_0.1Ho_0.05FeO₃ multiferroic ceramics were prepared by a rapid liquid sintering method. The ceramics exhibited an obvious ferroelectric loop with a remnant polarization of 11.2 μC/cm² and also showed weak ferromagnetism with the remnant magnetization of 0.179 emu/g at room temperature. A considerable enhancement of the polarization on magnetic poling and a dielectric anomaly in the vicinity of the antiferromagnetic transition temperature due to the intrinsic magnetoelectric coupling effect were observed in Bi_0.85La_0.1Ho_0.05FeO₃ ceramics. The dielectric constant for the Bi_0.8La_0.1Ho_0.05FeO₃ samples at room temperature decreases with increasing applied magnetic fields, and the coupling coefficient (?′(H) − ?′(0))/?′(0) reaches −1.04% at H = 10 kOe.     

轴向压力对Na0.5Bi4.5Ti4O15铋层结构铁电陶瓷取向性的影响

采用烧结时在陶瓷坯体上施加一个较小的轴向压力方法实现了铋层结构Na0.5Bi4.5Ti4O15铁电陶瓷的织构化。实验表明,随压力增加,陶瓷的横向延伸率上升,材料密度略有降低。同时,XRD分析表明,轴向压力提高了平行压力方向和垂直压力方向上晶粒取向度的差异,表明施加压力有助于提高陶瓷的织构化程度。同时,电学性能测试表明,随着压力增加,压力方向上的陶瓷介电常数和损耗均随之下降。在NBT体系的烧结过程中,低熔点的Bi2O3等低熔点物质会首先熔融,形成局部液态;NBT晶粒具有片状结构,在外力和高温熔体的共同作用下,发生倾斜和滑移,产生定向排列的趋势;随后,这些局部定向的大晶粒作为模板,促进了NBT陶瓷的晶粒定向和织构化。     

The structural and electric properties of Li- and K-substituted Bi0.5Na0.5TiO3 ferroelectric ceramics

The structure, dielectric properties and phase transition of lithium and potassium modified Bi_0.5Na_0.5TiO₃ ceramics were investigated widely. The phase transition behavior with respect to changes in composition and temperature was investigated using X-ray diffraction analysis, dielectric and ferroelectric characterizations. The experimental results show that there is a diffusion phase transition in (Na_1−xK_x)_0.5Bi_0.5TiO₃ ceramics at T_m and the diffuseness of the phase transition is more obvious for the samples near the morphotropic phase boundary. In (Na_1−xLi_x)_0.5Bi_0.5TiO₃ system, due to the space charge polarization induced by ions conductivity, the low frequency permittivity increases so remarkably at high temperature that the peak of maximum permittivity vanishes. The hysteresis loops at different temperatures indicate that there is no existence of anti-ferroelectrics in lithium and potassium modified Bi_0.5Na_0.5TiO₃ ceramics above the depolarization temperature T_d. The depolarization reason is that the tetragonal nonpolar phase occurs and leads to the macro-micro domain transformation at about T_d.     

Characterization of sol-gel synthesised lead-free (1 − x)Na0.5Bi0.5TiO3-xBaTiO3-based ceramics

The crystal structure, microstructure, dielectric and ferroelectric properties of (1 − x)Na_0.5Bi_0.5TiO₃-xBaTiO₃ ceramics with x = 0, 0.03, 0.05, 0.07 and 0.1 are investigated. A structural variation according to the system composition was investigated by X-ray diffraction (XRD) analyses. The results revealed that the synthesis temperature for pure perovskite phase powder prepared by the present sol-gel process is much lower (800 °C), and a rhombohedral-tetragonal morphotropic phase boundary (MPB) is found for x = 0.07 composition which showing the highest remanent polarization value and the smallest coercive field. The optimum dielectric and piezoelectric properties were found with the 0.93Na_0.5Bi_0.5TiO₃-0.07BaTiO₃ composition. The piezoelectric constant d₃₃ is 120 pC/N and good polarization behaviour was observed with remanent polarization (P_r) of 12.18 pC/cm², coercive field (E_c) of 2.11 kV/mm, and enhanced dielectric properties ?_r > 1500 at room temperature. The 0.93Na_0.5Bi_0.5TiO₃-0.07BaTiO₃-based ceramic is a promising lead-free piezoelectric candidate for applications in different devices.     

Impedance analysis of thermally modified SrBi2(Nb0.5Ta0.5)2O9 ceramics

Aurivillius SrBi₂(Nb_0.5Ta_0.5)₂O₉ (SBNT 50/50) ceramics were prepared using the conventional solid-state reaction method. The obtained samples were thermally modified in high vacuum to study the influence of the formed defects on the dielectric and electrical properties of the samples. Scanning electron microscopy with an energy dispersion X-ray spectrometer was applied to investigate the grain structure and stoichiometry of the studied ceramics. Their dielectric properties were determined by impedance spectroscopy measurements. A strong low frequency dielectric dispersion was found to exist in this material which was controlled by thermal modification of the tested ceramics. This phenomenon can be ascribed to the presence of ionized space charge carriers such as oxygen and bismuth vacancies. The dielectric relaxation was defined on the basis of an equivalent circuit. Moreover the temperature dependence of various electrical properties was determined and discussed.     

Preparation and electrical properties of Bi0.5Na0.5TiO3-BaTiO3-KNbO3 lead-free piezoelectric ceramics

Lead-free (1 − x)Bi_0.47Na_0.47Ba_0.06TiO₃-xKNbO₃ (BNBT-xKN, x = 0-0.08) ceramics were prepared by ordinary ceramic sintering technique. The piezoelectric, dielectric and ferroelectric properties of the ceramics are investigated and discussed. The results of X-ray diffraction (XRD) indicate that KNbO₃ (KN) has diffused into Bi_0.47Na_0.47Ba_0.06TiO₃ (BNBT) lattices to form a solid solution with a pure perovskite structure. Moderate additive of KN (x ≤ 0.02) in BNBT-xKN ceramics enhance their piezoelectric and ferroelectric properties. Three dielectric anomaly peaks are observed in BNBT-0.00KN, BNBT-0.01KN and BNBT-0.02KN ceramics. With the increment of KN in BNBT-xKN ceramics, the dielectric anomaly peaks shift to lower temperature. BNBT-0.01KN ceramic exhibits excellent piezoelectric properties and strong ferroelectricity: piezoelectric coefficient, d₃₃ = 195 pC/N; electromechanical coupling factor, k_t = 58.9 and k_p = 29.3%; mechanical quality factor, Q_m = 113; remnant polarization, P_r = 41.8 μC/cm²; coercive field, E_c = 19.5 kV/cm.     

Enhancement microwave dielectric properties of La(Mg0.5Sn0.5)O3 ceramics by substituting Mg with Ni

The microwave dielectric properties of La(Mg_0.5−xNi_xSn_0.5)O₃ ceramics were examined with a view to their exploitation for mobile communication. The La(Mg_0.5−xNi_xSn_0.5)O₃ ceramics were prepared by the conventional solid-state method at various sintering temperatures. The X-ray diffraction patterns of the La(Mg_0.4Ni_0.1Sn_0.5)O₃ ceramics revealed no significant variation of phase with sintering temperatures. Apparent density of 6.71 g/cm³, dielectric constant (?_r) of 20.19, quality factor (Q × f) of 74,600 GHz, and temperature coefficient of resonant frequency (τ_f) of −85 ppm/°C were obtained for La(Mg_0.4Ni_0.1Sn_0.5)O₃ ceramics that were sintered at 1550 °C for 4 h.     

Influence of A-site Gd doping on the microstructure and dielectric properties of Ba(Zr0.1Ti0.9)O3 ceramics

Pure and Gd-doped barium zirconate titanate (BaZr_0.1Ti_0.9O₃, BZT) ceramics were prepared by solid state reaction method. Phase analysis showed the formation of the pyrochlore phase (Gd₂Ti₂O₇) at about 5 mol% Gd doping in BZT. The microstructural investigation on the sintered ceramics showed that Gd doping significantly reduced the grain size of pure BZT ceramics, from about 100 μm to 2-5 μm. Change in the Gd concentration had minor influence on the grain size and on morphology. An increase in the Gd content decreased the Curie temperature (T_C) of the BZT ceramics. The maximum dielectric constant at T_C was observed for 2 mol% Gd and with further increase in Gd content the dielectric constant at T_C decreased. The dielectric constant was significantly improved compared to that of pure BZT ceramic. Tunable dielectric materials with good dielectric properties can be prepared by doping BZT with Gd.