Enhancing polymer/graphene oxide gas barrier film properties by introducing new crystals

A transparent, gas barrier film comprised of poly(vinyl alcohol) (PVA) and graphene oxide (GO) is synthesized through combined methods of solution blending and isothermal recrystallization. The recrystallized PVA/GO film with only 0.07 vol% GO gives an O₂ transmission rate <0.005 cc m⁻² day⁻¹ and an O₂ permeability <5.0 × 10⁻²⁰ cm³ cm cm⁻² Pa⁻¹ s⁻¹; hence, it is far superior to other blend polymer/inorganic composites. The excellent O₂ barrier properties are attributed to a unique hybrid of PVA crystals and GO sheets. PVA crystals form around the GO during isothermal recrystallization, indicating that a GO sheet can act as a nucleating agent. The newly formed PVA crystals fill in the spaces between the GO sheets, and together they become ultra-large impermeable regions, which can prevent the passage of O₂. The hybrid film has potential applications in flexible electronics, pharmaceuticals, and food packaging.     

Pressure-assisted self-assembly technique for fabricating composite membranes consisting of highly ordered selective laminate layers of amphiphilic graphene oxide

We prepare highly ordered flexible layers of graphene oxide (GO) on modified polyacrylonitrile substrates by the pressure-assisted self-assembly technique. This composite membrane shows excellent performance during the pervaporation separation of a 70 wt.% isopropyl alcohol (IPA)/water mixture: 99.5 wt% water in permeate and 2047 g m⁻² h⁻¹ permeation flux. Despite the specific GO deposition increase from 4.3 to 43.3 × 10⁻⁵ g cm⁻² (ninefold layer thickness growth), its effect on the permeation flux is not significant, as manifested by only a little decrease in the flux. At 70 °C feed temperature, the permeate water concentration remains 99.5 wt% and the permeation flux reaches 4137 g m⁻² h⁻¹. The high selectivity may be due to the dense GO film consisting of highly ordered and packed laminates, allowing water but inhibiting IPA molecules to pass through. GO is demonstrated to be amphiphilic: water molecules adsorb first at the hydrophilic edge (hydroxides) and then rapidly diffuse through the hydrophobic core (mainly carbon), forming a water passage channel that promotes high permeation flux. When water molecules permeate through the GO layers, they accumulate and form a monolayer structure that pushes the successive layers away from each other, leading to widening of the d-spacing.     

Hydrogen-assisted pulsed KrF-laser irradiation for the in situ photoreduction of graphene oxide films

We report on the use of pulsed KrF-laser irradiation for the in situ reduction of graphene oxide (GO) films under both vacuum and partial hydrogen pressure. By exposing GO films to 500 pulses of a KrF-laser, at a fluence of 10 mJ/cm², their sheet resistance (R_s) is dramatically reduced from highly insulating (∼10¹⁰ Ω/sq) to conductive values of ∼3 kΩ/sq. By increasing the laser fluence, from 10 to 75 mJ/cm², we were able to identify an optimal fluence around 35 mJ/cm² that leads to highly conductive films with R_s values as low as 250 Ω/sq and 190 Ω/sq, under vacuum (10⁻⁵ Torr) and 50 mTorr of H₂, respectively. Raman spectroscopy analyses confirmed the effective reduction of the KrF-laser irradiated GO films through the progressive recovery of the characteristic 2D band of graphene. Furthermore, systematic Fourier-transform infrared spectroscopy analysis has revealed that KrF-laser induced reduction of GO preferentially occurs through photodissociation and removal of carboxyl (COOH) and alcohol (OH) groups. A direct correlation is established between the electrical resistance of photoreduced GO films and their COOH and OH bond densities. The KrF-laser induced reduction of GO films is found to be more efficient under H₂ background than under vacuum. It is concluded that our KrF-laser reduced GO films mainly consist of turbostratic graphite built from randomly organized few-layers-graphene building blocks, which contains some residual oxygen atoms and defects. Finally, by monitoring the KrF-laser fluence, it is shown that reduced GO films combining optical transmission as high as ∼80% along with sheet resistance as low as ∼500 Ω/sq can be achieved with this room-temperature and on-substrate process. This makes the laser-based reduction process developed here particularly attractive for photovoltaic hybrid devices using silicon substrates.     

Semiconducting amorphous carbon thin films for transparent conducting electrodes

Semiconducting amorphous carbon thin films were directly grown on SiO₂ substrate by using chemical vapor deposition. Raman spectra and transmission electron microscopy image showed that the a-C films have a short-range ordered amorphous structure. The electrical and optical properties of the a-C thin films were investigated. The films have sheet resistance of 3.7 kΩ/□ and high transmittance of 82%. They exhibit metal-oxide-semiconductor field effect transistor mobility of 10–12 cm² V⁻¹ s⁻¹ at room temperature, which is comparable to previous reported mobility of amorphous carbon. The optical band gap was calculated by Tauc’s relationship and photoluminescence spectra showed that the films are semiconductor with an optical band gap of 1.8 eV. These good physical properties make the a-C films a candidate for the application of transparent conducting electrodes.     

Fabrication of highly efficient TiO2/Ag/TiO2 multilayer transparent conducting electrode with N ion implantation for optoelectronic applications

Fabrication of highly conductive and transparent TiO₂/Ag/TiO₂ (referred hereafter as TAT) multilayer films with nitrogen implantation is reported. In the present work, TAT films were fabricated with a total thickness of 100 nm by sputtering on glass substrates at room temperature. The as-deposited films were implanted with 40 keV N ions for different fluences (1×10¹⁴, 5×10¹⁴, 1×10¹⁵, 5×10¹⁵ and 1×10¹⁶ ions/cm²). The objective of this study was to investigate the effect of N⁺ implantation on the optical and electrical properties of TAT multilayer films. X-ray diffraction of TAT films shows an amorphous TiO₂ film with a crystalline peak assigned to Ag (111) diffraction plane. The surface morphology studied by atomic force microscopy (AFM) and field emission scanning electron microscope (FESEM) revealed smooth and uniform top layer of the sandwich structure. The surface roughness of pristine film was 1.7 nm which increases to 2.34 nm on implantation for 1×10¹⁴ ions/cm² fluence. Beyond this fluence, the roughness decreases. The oxide/metal/oxide structure exhibits an average transmittance ~80% for pristine and ~70% for the implanted film at fluence of 1×10¹⁶ ions/cm² in the visible region. The electrical resistivity of the pristine sample was obtained as 2.04×10⁻⁴ Ω cm which is minimized to 9.62×10⁻⁵ Ω cm at highest fluence. Sheet resistance of TAT films decreased from 20.4 to 9.62 Ω/□ with an increase in fluence. Electrical and optical parameters such as carrier concentration, carrier mobility, absorption coefficient, band gap, refractive index and extinction coefficient have been calculated for the pristine and implanted films to assess the performance of films. The TAT multilayer film with fluence of 1×10¹⁶ ions/cm² showed maximum Haacke figure of merit (FOM) of 5.7×10⁻³ Ω⁻¹. X-ray photoelectron spectroscopy (XPS) analysis of N 1s and Ti 2p spectra revealed that substitutional implantation of nitrogen into the TiO₂ lattice added new electronic states just above the valence band which is responsible for the narrowing of band gap resulting in the enhancement in electrical conductivity. This study reports that fabrication of multilayer transparent conducting electrode with nitrogen implantation that exhibits superior electrical and optical properties and hence can be an alternative to indium tin oxide (ITO) for futuristic TCE applications in optoelectronic devices.     

Preparation and characterization of transparent indium- doped TiO2 films deposited by MOCVD

Titanium dioxide (TiO₂) films doped with different indium (In) concentrations have been prepared on SrTiO₃ (STO) substrates by high vacuum metalorganic chemical vapor deposition (MOCVD). X-ray diffraction (XRD) analyses revealed the TiO₂ films doped with low In concentrations to be [001] oriented anatase phase and the films with high In concentrations to present polycrystalline structures. The 1.8% In-doped TiO₂ film exhibited the best electrical conductivity properties with the lowest resistivity of 8.68×10⁻² Ω cm, a Hall mobility of 10.9 cm² V⁻¹ s⁻¹ and a carrier concentration of 6.5×10¹⁸ cm⁻³. The films showed excellent transparency with average transmittances of over 85% in the visible range.     

The size and dispersion effect of modified graphene oxide sheets on the photocatalytic H2 generation activity of TiO2 nanorods

Nano graphene oxide (NGO) was produced by further refluxing graphene oxide (GO) sheets in HNO₃, and carboxylic acid functionalized graphene oxide (GO–COOH) was obtained by a simple etherification reaction between GO and chloroacetic acid. The GO, GO–COOH and NGO sheets are combined with TiO₂ nanorods by a two-phase assembling method, and confirmed by transmission electronic microscopy. The GO–TiO₂, GO–COOH–TiO₂ and NGO–TiO₂ composites are used in a comparative study of photocatalytic H₂ generation activity under UV light irradiation. The H₂ generation rate of TiO₂ nanorods was slightly increased from 15 to 30 mL h⁻¹ g⁻¹ by replacing oleic acid ligands with hydrophilic dopamine, and significantly increased to 105 mL h⁻¹ g⁻¹ after combining with GO sheets. The further comparative study shows that GO–COOH–TiO₂ composite has higher H₂ generation rate of 180 mL h⁻¹ g⁻¹ than that of GO–TiO₂ and NGO–TiO₂ composites.     

The effect of annealing on electrical properties of fluorinated amorphous carbon films

Fluorinated amorphous carbon (a–C:F) films have been deposited by electron cyclotron resonance chemical vapor deposition (ECR–CVD) at room temperature using C₄F₈ and CH₄ as precursor gases. The chemical compositions and electrical properties of a–C:F films have been studied by X-ray photoelectron spectroscopy (XPS), capacitance–voltage (C–V) and current-voltage (I–V) measurements. The results show that C–CF_x and C–C species of a–C:F films increase and fluorine content decreases after annealing. The dielectric constant of the annealed a–C:F films increases as a result of enhancement of film density and reduction of electronic polarization. The densities of fixed charges and interface states decrease from 1.6 × 10¹⁰ cm^− 2 and (5–9) × 10¹¹ eV^− 1 cm^− 2 to 3.2 × 10⁹ cm^− 2 and (4–6) × 10¹¹ eV^− 1 cm^− 2 respectively when a–C:F films are annealed at 300 °C. The magnitude of C–V hysteresis decreases due to reduced dangling bonds at the a–C:F/Si interfaces after heat treatment. The conduction of a–C:F films shows ohmic behavior at lower electric fields and is explained by Poole–Frankel (PF) mechanism at higher electric fields. The PF current increases indicative of reduced trap energy when a–C:F films are subjected to higher annealing temperatures.     

Electrical contacts to nitrogen incorporated nanocrystalline diamond films

The effect of surface plasma treatment on the nature of the electrical contact to the nitrogen incorporated nanocrystalline diamond (n-NCD) films is reported. Nitrogen incorporated NCD films were grown in a microwave plasma enhanced chemical vapor deposition (MPECVD) reactor using CH₄ (1%)/N₂ (20%)/Ar (79%) gas chemistry. Raman spectra of the films showed features at ∼ 1140 cm^− 1, 1350 cm^− 1(D-band) and 1560 cm^− 1(G-band) respectively with changes in the bonding configuration of G-band after the plasma treatment. Electrical contacts to both untreated and surface plasma treated films are formed by sputtering and patterning Ti/Au metal electrodes. Ohmic nature of these contacts on the untreated films has changed to non-ohmic type after the hydrogen plasma treatment. The linear current–voltage characteristics could not be obtained even after annealing the contacts. The nature of the electrical contacts to these films depends on the surface conditions and the presence of defects and sp² carbon.     

Characterization of spray pyrolytically deposited high mobility praseodymium doped CdO thin films

Praseodymium (Pr) doped CdO thin films with high transparency and high mobility were deposited, using a homemade spray pyrolysis setup, on micro-slide glass substrates preheated at 300 °C. Polycrystalline nature and Cd-O bond vibration of deposited films were confirmed by X-ray diffraction, micro-Raman and Fourier transform infrared spectroscopy analyses. The oxidation state of Cd²⁺, O²⁻, and Pr³⁺ was confirmed by X-ray photoelectron spectroscopy analysis. The highest average particle size (92 nm-FESEM) and high RMS (13.48 nm-AFM) values are obtained for 0.50 wt% Pr doped CdO thin film. The optical band gap is varied between 2.38 eV and 2.52 eV, depending on the Pr doping concentration. Photoluminescence spectra revealed that Pr doped CdO thin film exhibits strong green emission at 582 nm. High mobility (82 cm²/V s), high charge carrier concentration (2.19×10²⁰ cm⁻³) and high transmittance (83%) were observed for 0.50 wt% Pr doped CdO film. A high figure of merit (9.79×10⁻³ Ω⁻¹) was obtained for 0.50 wt% Pr doped CdO thin films. The mechanism behind the above results is discussed in detail in this paper.     

Improved charging/discharging behavior of electropolymerized nanostructured composite films of polyaniline and electrochemically reduced graphene oxide

In this work, a simple electrochemical reduction procedure has been applied to nanostructured composite films of polyaniline (PANI) and graphene oxide (GO) having a globular surface morphology with the grain size of 50 nm. The reduction converts GO to reduced GO (rGO) which improves the electroactivity of the PANI composite films with 30%. Cyclic voltammetry confirmed the reduction of GO to rGO whereas electrochemical impedance spectroscopy showed that the rGO network increases the redox capacitance of the composite films with 15% to 77 mF cm⁻². In a three-electrode cell, the anodic charge of the PANI film containing GO increased with 18.7% during the potential cycling stability test for 10,000 cycles between −0.2 and 0.5 V, indicating that the film had a good stability against degradation. This composite film type still maintained a high capacitance of 15 mF cm⁻² in a symmetric two-electrode cell after 10,000 potential cycles between 0 and 0.4 V. The electrochemically prepared PANI composite films reported here are aimed to be used in capacitor applications where it is crucial to deposit thin PANI layers on well-defined small surfaces where other polymerization or deposition techniques cannot be used and in solid-state chemical sensors as ion-to-electron transducer interfaces.     

Influence of SiC particle addition on the nucleation density and adhesion strength of MPCVD diamond coatings on Si3N4 substrates

It is generally accepted that SiC layers are often involved in the adhesion efficiency of chemical vapour deposition (CVD) diamond films on Si-containing substrates. Si₃N₄–SiC composite substrates with different amounts of SiC particles (0–50 wt%) were then used for diamond deposition. Samples were produced by pressureless sintering (1750°C, N₂ atmosphere, 2–4 h). The diamond films were grown on a commercial MPCVD reactor using H₂/CH₄ mixtures. Despite there being no special substrate pre-treatment, the films were densely nucleated when SiC was added (N_d≈1×10¹⁰ cm⁻²) with primary nanosized (∼100 nm) particles, followed by a less dense (N_d≈1×10⁶ cm⁻²) secondary nucleation. Indentation experiments with a Brale tip of up to 588 N applied load corroborated the benefit of SiC inclusion for a strong adhesion. The low thermal expansion coefficient mismatch between Si₃N₄ and diamond resulted in very low compressive stresses in the film, as proved by micro-Raman spectroscopy.     

Enhanced electrochemical properties of LiFePO4–silicon composites as positive electrode materials fabricated using a solid-state method

LiFePO₄–silicon composites were fabricated by using a solid-state method for applying positive electrodes in lithium ion batteries. The LiFePO₄–silicon composites were characterized with X-ray diffraction and field emission scanning electron microscopy. Their electrochemical properties were investigated with cyclic voltammetry, electrochemical impedance spectroscopy, and charge–discharge tests. The added silicon not only suppressed the surface corrosion caused by the decreasing H⁺ concentration in the electrolyte, but it also acted as a barrier between the LiFePO₄ particles and LiPF₆ electrolyte, thereby preventing the dissolution of Fe²⁺ in the electrode and enhancing the electrolyte/active material interactions. This resulted in improved lithium-ion transfer kinetics and excellent positive electrode performance, especially at high current densities and different operating temperatures (0, 25, and 50 °C). At 25 °C, the LiFePO₄ composite containing 2 wt% of silicon delivered the best electrochemical performance with a lithium-ion diffusion coefficient of 1.81×10⁻⁹ cm² s⁻¹, a specific discharge capacity of 143 mA h g⁻¹ for the initial cycle, and a capacity retention of 98% after 100 cycles. In contrast, the corresponding values for the pure LiFePO₄ were 1.19×10⁻¹¹ cm² s⁻¹, 115 mA h g⁻¹, and a capacity retention of 76% after 100 cycles, respectively.     

Rational design of nickel cobalt sulfide/oxide core-shell nanocolumn arrays for high-performance flexible all-solid-state asymmetric supercapacitors

The development of wearable electronics has created a surge of interest in designing flexible energy storage device with high energy density and long lifespan. In this work, we have successfully fabricated a flexible asymmetric supercapacitor (ASC) based on the NiCo₂S₄@NiCo₂O₄ nanocolumn arrays (NCAs). The nickel cobalt sulfide/oxide core-shell nanostructures were rationally synthesized through a facile stepwise approach. The NiCo₂S₄@NiCo₂O₄ NCAs based electrode delivered a high specific capacitance of 2258.9 F g⁻¹ at a current density of 0.5 A g⁻¹. The as-assembled flexible ASC device exhibited a high energy density of 44.06 Wh kg⁻¹, a high power density of 6.4 kW kg⁻¹, and excellent cycling stability by retaining 92.5% after 6000 cycles. Excitingly, the electrochemical property of the ASC device could be maintained under severe bending, indicating superior flexibility and mechanical stability. The NiCo₂S₄@NiCo₂O₄ core-shell NCAs possess enormous potential for future wearable electronic applications.     

Integration of tailored reduced graphene oxide nanosheets and electrospun polyamide-66 nanofabrics for a flexible supercapacitor with high-volume- and high-area-specific capacitance

Nanofiber fabric is firstly introduced to replace common microfiber fabrics as the platform for flexible supercapacitors. Nanofiber and microfiber electrodes can be simply fabricated using a dipping process that impregnates reduced graphene oxide (RGO) nanosheets into electrospun polyamide-66 (PA66) nanofiber and microfiber fabrics. RGO nanosheets are tailored to various sizes and only RGO with a medium diameter of 250–450 nm (denoted as M-RGO) can effectively penetrate the pores of nanofiber fabrics for constructing smooth conductive paths within PA66 nanofiber fabrics. The synergistic effect between suitable sizes of RGO nanosheets and nanofiber fabrics with a high specific area provides a symmetric supercapacitor composed of M-RGO/PA66 nanofiber fabric electrodes with high-volume and high-area specific capacitance (C_S,V and C_S,A, equal to 38.79 F cm⁻³ and 0.931 F cm⁻² at 0.5 A g⁻¹, respectively), which are much larger than that of a symmetric supercapacitor composed of RGO/PA66 microfiber fabric electrodes (8.52 F cm⁻³ and 0.213 F cm⁻² at 0.5 A g⁻¹). The effect of impregnating nanofiber fabrics with suitably sized RGO to promote C_S,V and C_S,A of flexible supercapacitors has been demonstrated.     

Ag enhanced electrochemical performance for Na2Li2Ti6O14 anode in rechargeable lithium-ion batteries

Due to the characteristics of an electronic insulator, Na₂Li₂Ti₆O₁₄ always suffers from low electronic conductivity as anode material for lithium storage. Via Ag coating, Na₂Li₂Ti₆O₁₄@Ag is fabricated, which has higher electronic conductivity than bare Na₂Li₂Ti₆O₁₄. Enhancing the Ag coating content from 0.0 to 10.0 wt%, the surface of Na₂Li₂Ti₆O₁₄ is gradually deposited by Ag nanoparticles. At 6.0 wt%, a continuous Ag conductive layer is formed on Na₂Li₂Ti₆O₁₄. While, particle growth and aggregation take place when the Ag coating content reaches 10.0 wt%. As a result, Na₂Li₂Ti₆O₁₄@6.0 wt% Ag displays better cycle and rate properties than other samples. It can deliver a lithium storage capacity of 131.4 mAh g⁻¹ at 100 mA g⁻¹, 124.9 mAh g⁻¹ at 150 mA g⁻¹, 119.1 mAh g⁻¹ at 200 mA g⁻¹, 115.8 mAh g⁻¹ at 250 mA g⁻¹, 111.9 mAh g⁻¹ at 300 mA g⁻¹ and 109.4 mAh g⁻¹ at 350 mA g⁻¹, respectively.     

Preparation of on chip,flexible supercapacitor with high performance based on electrophoretic deposition of reduced graphene oxide/polypyrrole composites

A new concept is introduced to fabricate flexible, on-chip supercapacitors by electrophoretically depositing highly dispersed reduced graphene oxide/polypyrrole on interdigital-like electrodes. By the unique method, the deposited films could construct on the substrate facilely and uniformly. The prepared all-solid-state device demonstrates high volumetric capacitance (about 147.9 F cm⁻³), high energy density (13.15 mWh cm⁻³ at a power density of 1300 mW cm⁻³) and excellent cycling stability (approximately 71.7% of the initial capacitance retained after 5000 cycles). Compared with other supercapacitor, the device demonstrated here is lightweight, flexible and inexpensive.     

Influence of sintering aids and excess Lithium on the conductivity of perovskite-type Li3/8Sr7/16Zr1/4Nb3/4O3 solid electrolyte

Perovskite-structured Li_3/8Sr_7/16Zr_1/4Nb_3/4O₃ solid-state Lithium-conductors were prepared by conventional solid-state reaction method. Influence of sintering aids (Al₂O₃, B₂O₃) and excess Lithium on structure and electrical properties of Li_3/8Sr_7/16Zr_1/4Nb_3/4O₃ (LSNZ) has been investigated. Their crystal structure and microstructure were characterized by X-ray diffraction analysis and scanning electron microscope, respectively. The conductivity and electronic conductivity were evaluated by AC-impedance spectra and potentiostatic polarization experiment. All sintered compounds are cubic perovskite structure. Optimal amount of excess Li₂CO₃ was chosen as 20 wt% because of the total conductivity of LSNZ-20% was as high as 1.6×10⁻⁵ S cm⁻¹ at 30 °C and 1.1×10⁻⁴ S cm⁻¹ at 100 °C, respectively. Electronic conductivity of LSNZ-20% is 2.93×10⁻⁸ S cm⁻¹, nearly 3 orders of magnitude lower than ionic conductivity. The density of solid electrolytes appears to be increased by the addition of sintering aids. The addition of B₂O₃ leads to a considerable increase of the total conductivity and the enhancement of conductivity is attributed to the decrease of grain-boundary resistance. Among these compounds, LSNZ-1 wt%B₂O₃ has lower activation energy of 0.34 eV and the highest conductivity of 1.98×10⁻⁵ S cm⁻¹ at 30 °C.     

Room-temperature UV-ozone assisted solution process for zirconium oxide films with high dielectric properties

A facile, low-cost, and room-temperature UV-ozone (UVO) assisted solution process was employed to prepare zirconium oxide (ZrO_x) films with high dielectric properties. ZrO_x films were deposited by a simple spin-coating of zirconium acetylacetonate (ZrAcAc) precursor in the environment-friendly solvent of ethanol. The smooth and amorphous ZrO_x films by UVO exhibit average visible transmittances over 90% and energy bandgap of 5.7 eV. Low leakage current of 6.0 × 10⁻⁸ A/cm² at 3 MV/cm and high dielectric constant of 13 (100 Hz) were achieved for ZrO_x dielectrics at the nearly room temperature. Moreover, a fully room-temperature solution-processed oxide thin films transistor (TFT) with UVO assisted ZrO_x dielectric films achieved acceptable performances, such as a low operating voltage of 3 V, high carrier mobility of 1.65 cm² V⁻¹ s⁻¹, and on/off current ratio about 10⁴–10⁵. Our work indicates that simple room-temperature UVO is highly potential for low-temperature, solution-processed and high-performance oxide films and devices.     

Effect of total reaction pressure on electrical properties of boron doped homoepitaxial (100) diamond films formed by microwave plasma-assisted chemical vapor deposition using trimethylboron

Boron was doped into diamond films which were synthesized homoepitaxially on polished (100) diamond substrates by means of microwave plasma-assisted chemical vapor deposition (MPCVD) using trimethylboron as the dopant at a constant substrate temperature of 1073 K. The morphologies and electrical properties of the synthesized diamond films were dependent on the total reaction pressure. A maximum Hall mobility, 760 cm² V⁻¹ s⁻¹, was obtained for the film synthesized at 10.7 kPa. The values of Hall mobility were comparable with those obtained for B₂H₆-doped films at corresponding hole concentrations.