Local structure of composite Cr-containing diamond-like carbon thin films

Composite Cr-containing hydrogenated amorphous diamond-like carbon (Cr-DLC) films were synthesized by a hybrid PVD/CVD plasma-assisted deposition process. In a recent study, it was found that Cr-DLC films with <∼12 at.% Cr possess excellent tribological properties. However, the role of Cr in inducing these characteristics is not clear. In the present report, the local structure around the Cr atoms in the latter films was studied as a function of Cr content by X-ray absorption spectroscopy. The Cr K-edge X-ray absorption near edge structure spectra show that Cr in DLC has a chemical state similar to that of chromium carbide. Analysis of the extended X-ray absorption fine structure spectra shows that at low Cr content (<0.4 at.% Cr), Cr is dissolved in the amorphous DLC matrix forming an atomic-scale composite. Simulation studies suggest that in the latter films, Cr tends to be present as very small atomic clusters of 2-3 Cr atoms. At higher Cr contents (>1.5 at.%), Cr is present as nanoparticles (<10 nm) of a defected carbide structure forming a nanocomposite.     

Parametric studies of diamond-like carbon by pulsed Nd:YAG laser deposition

This paper presents the results, analysis and discussions of parametric studies of diamond-like carbon (DLC) thin films by pulsed Nd:YAG laser deposition. Effects on the DLC properties and growth rate were investigated by varying the deposition parameters, namely the laser wavelength and fluence, substrate and temperature. For characterization, visible Raman spectroscopy, current-voltage measurement, optical interferometry, and optical absorption technique were employed. Comparisons were made with previous work by other workers who had also employed pulsed Nd:YAG lasers. The results also supported the subplantation mechanism for DLC formation.     

Iodine doping of amorphous diamond-like carbon films

Amorphous diamond-like carbon (a:DLC) films have been doped by incorporation of iodine during the films deposition. XPS and AES analysis shows the existence of iodine atoms with constant concentration of 0.9% along the iodine doped DLC film (a:I-DLC). The optical and electronic properties of the doped films were studied. Optical measurements in the visible light show that iodine affects the interband absorption of the a:DLC films. Iodine causes decreasing of the optical energy gap, from 1.07 to 0.78 eV and affects the density of states at the conducting band. Like the optical measurements, electrical measurements show that iodine also decreases the activation energy of the films from 0.34 to 0.22 eV. This shows that although both gaps decrease, the optical energy gap remains different from that of electrical gap, also after doping.     

Characteristics of nitrogen doped diamond-like carbon thin films grown by microwave surface-wave plasma CVD

Nitrogen doped diamond-like carbon (DLC:N) thin films were deposited on p-type silicon (p-Si) and quartz substrates by microwave (MW) surface-wave plasma (SWP) chemical vapor deposition (CVD) at low temperature (< 100 °C). For films deposition, argon (Ar: 200 sccm), acetylene (C₂H₂:10 sccm) and nitrogen (N: 5 sccm) were used as carrier, source and doping gases respectively. DLC:N thin films were deposited at 1000 W microwave power where as gas composition pressures were ranged from 110 Pa to 50 Pa. Analytical methods such as X-ray photoelectron spectroscopy (XPS), UV-visible spectroscopy, FTIR and Raman spectroscopy were employed to investigate the chemical, optical and structural properties of the DLC:N films respectively. The lowest optical gap of the film was found to be 1.6 eV at 50 Pa gas composition pressure.     

Electrodeposition mechanism of hydrogen-free diamond-like carbon films from organic electrolytes

A brief introduction on the development of electrodeposition of diamond-like carbon (DLC) films was given, and our experiments were done, emphasizing on how to deposit hydrogen-free DLC films. Methanol, acetonitrile and N,N-dimethyl formamide (DMF) were chosen as electrolytes, while Si and conductive glass were used as substrates. The sample deposited on Si through methanol was the only one in this comparative research that produced hydrogen-free DLC film as it was indicated by the FTIR spectroscopy. Two explanations, based on reaction mechanism, were proposed to explain this fact. It was believed that the reaction rate and the effect of hydroxyl groups in the molecules of the electrolytes played important roles in the deposition of hydrogen-free DLC films.     

液相沉积类金刚石膜的沉积机理研究

根据电化学的相关理论,提出了钛合金表面液相沉积DLC膜的反应机理,给出了可能电极过程,认为膜是通过甲基阳离子的亲电取代反应而不断生长。讨论了氢原子对金刚石结构的稳定作用,并解释了实验条件对膜结构和性能的影响。     

Hemocompatibility of diamondlike carbon–metal composite thin films

We have investigated the hemocompatibility of diamondlike carbon–silver composite and diamondlike carbon–titanium composite thin films prepared using a multicomponent target pulsed laser deposition process. These materials were examined using transmission electron microscopy, Raman spectroscopy, nanoindentation, electrochemical charge transfer testing, and platelet adhesion testing. Cross-sectional transmission electron microscopy revealed that silver self-assembles into nanoparticle arrays within the diamondlike carbon matrix in the diamondlike carbon–silver composite film. On the other hand, titanium self-assembles into alternating nanometer-thick titanium carbide layers within the diamondlike carbon matrix in the diamondlike carbon–titanium composite film. The hemocompatibility of these materials was examined using electrochemical charge transfer testing and platelet adhesion testing. A few small, widely scattered crystals were observed on the surface of the unalloyed diamondlike carbon film exposed to platelet rich plasma. On the other hand, dense fibrin networks with densely aggregated platelets were observed on the surfaces of diamondlike carbon–silver and diamondlike carbon–titanium composite thin films exposed to platelet rich plasma. Electrochemical testing revealed that the time constant for the diamondlike carbon thin film (λ = 1) was significantly higher than those for the diamondlike carbon–silver and diamondlike carbon–titanium composite thin films. These results suggest possible uses for diamondlike carbon thin films and diamondlike carbon–metal composite thin films as coatings in next generation cardiovascular implants.     

Effect of N doping on properties of diamond-like carbon thin films produced by RF capacitively coupled chemical vapor deposition from different precursors

In this paper, we report results concerning properties of diamond-like carbon (DLC) thin films obtained in different experimental conditions: various RF power values and different precursors (methane, acetone and toluene or in combination with nitrogen). The deposition rate of DLC thin films obtained from precursors with low ionizing energy and high number of carbon atoms in molecule as acetone and toluene was higher (142 nm/min for acetone and 607 nm/min for toluene as compared with 79 nm/min for methane at 400 W input power). The highest value of hardness was obtained from methane (18 GPa). In the case of acetone and toluene precursors, the hardness increased with input power to the highest values of 16.8 and 14.8 GPa. By utilizing nitrogen as doping element, the resistivity of DLC thin films obtained from methane and acetone decreased from values higher than 10⁷ Ω cm to lower values of 12.5×10³ Ω cm for 3.79% nitrogen atomic concentration in the case of films obtained from methane and 40×10³ Ω cm for 4.26% nitrogen atomic concentration in the case of films obtained from acetone.     

In situ measurement of stresses in diamond-like carbon films

In situ determination of stresses in thin films can be used as an important tool to assist process development as well as to understand the thermodynamics of film formation. A simple technique for the measurement of stresses in growing films is described here. The technique consists of measuring the displacement of a laser beam reflected from the film surface. Displacement is induced by changes in the radius of the curvature of the substrate resulting from stresses in the film. The detector sensitivity at the used wavelength (635 nm) is approximately 12 mV μm⁻¹, for which our experimental set-up is equivalent to 4 mV μrad⁻¹. The actual data collected consist of the reflected beam displacement vs. time, and provides at any instant the value of the average stress. By knowing the deposition rate, time is directly correlated with film thickness, and the local stress can be determined. Examples of measurement of stresses in tetragonally bonded amorphous carbon films prepared by filtered cathodic arc are presented, as well as how this technique can be used to design the deposition process to virtually eliminate intrinsic stresses.     

Structure and mechanical properties of W incorporated diamond-like carbon films prepared by a hybrid ion beam deposition technique

W incorporated diamond-like carbon films were prepared on silicon(1 0 0) wafers using a hybrid deposition system composed of an end-Hall-type hydrocarbon ion gun and a tungsten DC magnetron sputter source. The W concentration in the films was controlled by changing the fraction of Ar in the Ar and C₆H₆ reaction gas. The chemical composition, atomic bond structure, and mechanical properties were investigated for W concentrations ranging from 0 to 8.6 at.%. When the W concentration was <2.8 at.%, the W atoms were dissolved in the amorphous carbon matrix without forming a WC_1−x phase. Amorphous and crystalline WC_1−x nano-particles appeared when the W concentration was >2.8 and >3.6 at.%, respectively. It was found that the hardness and elastic modulus were not sensitive to the W concentration in this concentration range. On the other hand, the residual compressive stress was strongly dependent on the chemical state of the incorporated W atoms. The change in mechanical properties is discussed in terms of the microstructural changes induced by W incorporation.     

Synthesis of nitrogen incorporated diamond-like carbon thin films using microwave surface-wave plasma CVD

Nitrogenated diamond-like (DLC:N) carbon thin films have been deposited by microwave surface wave plasma chemical vapor deposition on silicon and quartz substrates, using argon gas, camphor dissolved in ethyl alcohol composition and nitrogen as plasma source. The deposited DLC:N films were characterized for their chemical, optical, structural and electrical properties through X-ray photoelectron spectroscopy, UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current–voltage characteristics. Optical band gap decreased (2.7 to 2.4 eV) with increasing Ar gas flow rate. The photovoltaic measurements of DLC:N / p-Si structure show that the open-circuit voltage (V_oc) of 168.8 mV and a short-circuit current density (J_sc) of 8.4 μA/cm² under light illumination (AM 1.5 100 mW/cm²). The energy conversion efficiency and fill factor were found to be 3.4 × 10^{− 4}% and 0.238 respectively.     

Electrically conductive properties of tungsten-containing diamond-like carbon films

Tungsten-containing diamond-like carbon films with different metal concentrations were investigated. The films of several hundred nanometers in thickness were deposited on the silicon wafer using RF-PECVD (radio frequency plasma enhanced chemical vapor deposition) method. During deposition, metal component was co-sputtered using DC magnetron of tungsten target. The six samples with the concentration of 3.8, 6.1, 8.0, 16.3, 24.3 and 41.4 at.% of tungsten were made. The structural analyses were performed by TEM (transmission electron microscope) and Raman spectroscopy. These results indicated that tungsten clusters were well dispersed in amorphous carbon host matrix in the case of tungsten concentration from 3.8 to 24.2 at.%. However, no such a structure can be observed in the sample with 41.4 at.%. The AC electrical resistance was measured in the temperature range of 2–300 K using four-probe method in vacuum condition. The observed temperature dependence of electrical conductivity can be expressed by σ=σ₀exp−2(C₀/kT)^1/2 and tungsten concentration from 3.8 at.% to 24.2 at.%. In addition, the sample with 41.4 at.% showed the resistive superconducting transition at T_c of around  5.5 K.     

Effect of temperature on sulfur-doped diamond-like carbon films deposited by pulsed laser ablation

In this study, S-DLC films were deposited using pulsed laser ablation of a novel sulfur-graphite (SG) mixture target using an ArF excimer laser (193 nm). The SG targets were made by mixing sulfur and graphite powders at different sulfur molar percentages from 0% to 25%. The S-DLC films were deposited at room temperature, 150 °C and 250 °C. The optical and electronic properties of the doped films were studied. Laser Raman spectroscopy indicated increased graphitic behavior with temperature but decreased with higher sulfur content. Spectroscopic ellipsometry analyses found that the optical band-gap energy, extinction coefficient and reflective index, clearly depended on deposition temperature and sulfur content. Hall Effect measurements indicated n-type carrier with concentration in the range of 1 × 10¹⁴ to 2 × 10¹⁷ cm^− 3, strongly depended upon the deposition temperature and amount of sulfur.     

Effect of microwave power on diamond-like carbon films deposited using electron cyclotron resonance chemical vapor deposition

Diamond-like carbon (DLC) films have been deposited using electron cyclotron resonance chemical vapor deposition (ECR-CVD) under various microwave power conditions. Langmuir probe measurement and optical emission spectroscopy (OES) were used to characterize the ECR plasma, while the films were characterized using Raman and infrared (IR) spectroscopies, hardness and optical gap measurements. It was found that the ion density and all signal peaks in the optical emission (OE) spectra increased monotonously following the increase in microwave power. Raman spectra and optical gap measurements indicate that the films become more graphitic with lower content of sp³-hybridized carbon atoms as the microwave power was increased. IR and hardness measurements indicate a reduction in hydrogen content and decrease in hardness for the film produced at relatively high microwave powers. A deposition mechanism is described which involved the ion bombardment of film surfaces and hydrogen–surface interactions. The deposition rate of DLC film is correlated to the ion density and CH₃ density.     

液相沉积类金刚石膜的结构与性能研究

探讨了液相沉积法制备类金刚石的新工艺,并采用XPS,Raman光谱和SEM等对所得膜的结构进行表征,证实所得的是类金刚石膜。液相沉积得到的类金刚石膜与钛合金基材之间具有较强的结合强度,并具有较低的摩擦系数和一定的耐磨损能力。     

Effects of iodine doping on optoelectronic properties of diamond-like carbon thin films deposited by microwave surface wave plasma CVD

We report the effects of iodine (I) doping on the electrical and optical properties of diamond-like carbon (DLC) thin films grown on silicon and quartz substrates by microwave surface wave plasma chemical vapor deposition at low temperature (<100 °C). For film deposition, we used argon gas with methane or camphor dissolved with ethyl alcohol composition as plasma source. The optical gap and photoconductivity measurements of the samples were carried out before and after the iodine doping. The results show that optical gap dropped from 3.4 to 0.9 eV corresponding to nondoping to iodine-doping conditions, respectively. The photovoltaic measurements show that the open-circuit voltage (V_oc) and short-circuit current density (J_sc) of I-doped DLC film deposited on n-type silicon substrate under light illumination (AM1.5, 100 mW/cm²) were approximately 177 mV and 1.15 μA, respectively, and the fill factor was found to be 0.217.     

Structural investigation and gas barrier performance of diamond-like carbon based films on polymer substrates

In this report, tetrahedral amorphous carbon (ta-C), hydrogenated amorphous carbon (a-C:H), silicon doped tetrahedral amorphous carbon (ta-C:Si:H), and silicon doped hydrogenated amorphous carbon (a-C:H:Si) films with thickness in the range 50-370 nm have been produced by PECVD (Plasma Enhanced Chemical Vapour Deposition) and FCVA ( Filtered Cathodic Vacuum Arc) techniques on Polyethylene terepthalate (PET) and polycarbonate (PC) substrates. The paper is concerned with exploring the links between the atomic structure, gas barrier performance in carbon based films deposited on polymer substrates. A range of techniques including XRR, NEXAFS, Raman, surface profilometry, nano-indentation and water vapour permeation analysis were used to analyze the microstructure and properties of the films. The intensity and area of π* peak at the C K (carbon) edge of the NEXAFS spectra was lower in the FCVA films in comparison to that of PECVD ones confirming the higher sp³ content of FCVA films. The surface of ta-C films showed a network of micro-cracks, which is detrimental for gas barrier application. However, the surfaces of both ta-C:H:Si and a-C:H:Si silicon-incorporated films were almost free of cracks. We also found that the incorporation of Si into both types of DLC films lead to a significant reduction of water vapour transmission rate.     

Preparation and microstructure properties of tetrahedral amorphous carbon films by pulsed laser deposition using camphoric carbon target

The properties of tetrahedral amorphous carbon (ta-C) films grown by pulsed laser deposition (PLD) using camphoric carbon (CC) target and their respective effects of diamond percentages by weight in the target (Dwt.%) are discussed. Scanning electron microscopy (SEM), atomic force microscopy (AFM), Visible-Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) analyses indicated that the Dwt.% noticeably modified the sp³ bonds content and the morphology of the ta-C films. The optical gap (E_g) and electrical resistivity (ρ) increase with Dwt.% up to 1.6 eV and 5.63×10⁷ (Ω cm), respectively, for the ta-C films deposited using target with higher of 50 Dwt.%. We found that the Dwt.% has modified the surface morphological, structural, bonding and physical properties of the camphoric carbon films.     

Humidity effect on friction behaviors of nano-undulated diamond-like carbon films

Humidity dependency of friction behavior of nano-undulated diamond-like carbon (DLC) films was investigated by a home-made ball-on-disk type tribometer under controlled relative humidity of 0, 50, and 90%. Nano-undulated DLC films with surface roughness ranging from 0.2 to 13.4 nm were prepared by deposition of DLC film on the Si substrate with Ni nanodots. Friction coefficient of the flat DLC surface increased with the relative humidity, while that of the nano-undulated surfaces revealed smaller dependence on the relative humidity. When the surface roughness increased to 13.4 nm, friction behavior was observed to be independent of the relative humidity. The analysis of chemical composition and atomic bond structure of the debris and the transfer layer revealed that the humidity dependence on the nano-undulated surface was minimized by suppressing the graphitization of the transfer layer even with high concentration of Fe in the debris.