锑掺杂对二氧化锡薄膜结构及发光性质的影响

采用射频磁控溅射方法在石英玻璃衬底上制备了SnO2:Sb薄膜.所制备的薄膜为四方金红石结构的多晶薄膜.PL谱表明,样品在396、450、500nm附近存在室温光致发射峰,发光峰的起因分别与SnO2薄膜中的氧空位缺陷及掺杂所致的施主一受主对之间的跃迁以及电子由其激发态向基态能级跃迁等因素有关.     

磁控溅射功率对掺铝氧化锌薄膜特性的影响

透明导电氧化物（TCO）薄膜因具有在可见光区透明和电阻率低等优异的光电性能,所以被广泛应用于各种光电器件中,例如平面液晶显示器（LCD）、太阳能电池、节能视窗等[1-2]。目前应用和研究最多的是掺锡（Sn）、     

用脉冲电源溅射ZnO薄膜时脉冲及工艺条件对靶电压的影响

用磁控溅射法制备ZnO∶Al透明导电膜时,降低靶电压可以减少溅射等离子体中被靶背反射回的中性离子和负氧离子对基片的轰击,提高薄膜的质量,降低薄膜电阻。本文研究了用中频脉冲直流溅射法和Zn∶Al合金靶反应溅射制备ZnO∶Al透明导电膜时,脉冲参数,如脉冲频率、反向脉冲幅度、反向脉冲时间、功率、氧氩比、溅射气压等工艺条件对靶电压的影响。结果表明,延长反向脉冲时间是降低靶电压的最有效方法。当反向时间由2μs增加到10μs时,靶电压降低了60%以上。     

丙烯酸树脂涂层对透明导电薄膜整体性能的影响

在有机玻璃(Polymethyl Methacrylate,PMMA)上磁控溅射透明导电金属薄膜,并引入丙烯酸树脂底涂层和面涂层,以期提高透明导电薄膜的耐环境性能,研究了涂层的引入对透明导电膜整体性能的影响.结果表明:引入丙烯酸树脂涂层后,透明导电薄膜的耐环境性能有了明显提高,且丙烯酸树脂涂层由于具有较低折射率,还可作...     

制备SnO2薄膜时原料中水对其成膜和光电性质的影响

用无水ＳｎＣｌ４和ＳｎＣｌ４．５Ｈ２Ｏ为原料，用热喷涂法制备ＳｎＯ２薄膜，在基片温度为５３０℃时，对所制得ＳｎＯ２薄膜进行了Ｘ－射线，ＳＥＭ分析，并对其发电性质进行测定，总结出含Ｈ２Ｏ的ＳｎＣｌ４制得的ＳｎＯ２薄膜生长速度快，电阻率低。     

GZO/Ag/GZO多层薄膜制备、结构与光电特性的研究

采用射频磁控溅射和离子束溅射联合设备在玻璃衬底上制备出了具有良好附着性、低电阻率和高透过率的GZO/Ag/GZO(ZnO掺杂Ga_2O_3简称GZO)多层薄膜.X射线衍射谱表明GZO/Ag/GZO多层薄膜是多晶膜,GZO层具有ZnO的六角纤锌矿结构,最佳取向为(002)方向;Ag层是立方结构,具有(111)取向.在GZO层厚度一定的情况下,研究了Ag层厚度的变化对多层膜结构以及光电特性的影响.研究发现,当Ag层厚度为10nm时,3层膜的电阻率为9×10~(-5)Ω·cm,在可见光范围内平均透过率达到89.7%,薄膜对应的品质因子数值为3.4×10~(-2)Ω~(-1).     

不连续Pt薄膜对ITO薄膜气敏特性的影响

在320℃时,如氧化铟锡(ITO)薄膜暴露在乙醇气氛中则其电阻急剧下降。利用直流平面磁控反应溅射的方法在约1Pa的氧与氩的混合气体中溅射铟锡合金制备了ITO薄膜。如果在ITO薄膜表面沉积一层不连续的Rt膜,薄膜对乙醇蒸汽的检测灵敏度大大提高,而且工作温度下降。本文就制备工艺对薄膜检测灵敏度的影响做了一些探讨,并且对Rt膜的作用进行了讨论。     

射频磁控溅射有机衬底SnO2∶Sb透明导电膜性能的研究

采用射频磁控溅射法在聚丙烯己二酯有机薄膜(polypropylene adipate, PPA)衬底上低温制备出锑掺杂的氧化锡(SnO2∶Sb)透明导电膜.研究了薄膜的厚度效应对SnO2∶Sb薄膜的结构、光学和电学特性的影响.制备薄膜为多晶膜,并且保持了纯二氧化锡的金红石结构.载流子浓度和迁移率随着薄膜厚度的增加而增大,电阻率随着薄膜厚度的增加而减小,最低电阻率为 2×10-3Ω*cm.     

退火对反应磁控溅射制备ITO薄膜性能影响

采用铟锡合金靶(铟-锡，90-10)，通过直流反应磁控溅射在玻璃基片上制备出ITO薄膜，并在大气环境下高温退火处理。研究了退火温度对薄膜结构、光学和电学性能的影响。研究表明，随着退火温度升高薄膜的电学特性得到很大提高。     

退火对反应磁控溅射制备ITO薄膜性能影响

采用铟锡合金靶 (铟 锡 ,90 - 10 ) ,通过直流反应磁控溅射在玻璃基片上制备出ITO薄膜 ,并在大气环境下高温退火处理。研究了退火温度对薄膜结构、光学和电学性能的影响。研究表明 ,随着退火温度升高薄膜的电学特性得到很大提高     

退火温度对SmCo永磁薄膜微结构及磁性能的影响

采用直流磁控溅射法制备SmCo薄膜,研究了退火温度对薄膜微结构及磁性能的影响。XRD分析结果表明,当退火温度为600℃时,SmCo5相析出,而Sm2Co17相在700℃析出。SEM照片可看出,退火温度高于900℃时,六方柱状的SmCo5相和菱方状的Sm2Co17相全部析出。随着退火温度的升高,晶粒尺寸增大,当温度达940℃时,晶粒尺寸减小,而在980℃时,晶粒尺寸又将增大。VSM测试表明,与制备态的薄膜相比,退火后的薄膜在垂直于膜面方向的矫顽力、剩余磁化强度及最大磁能积都增大。960℃时得到矫顽力和剩余磁化强度的最大值,800℃时得到最大磁能积的最大值。     

薄膜厚度和退火温度对纳米多晶硅薄膜特性影响

以高纯SiH4为气源,采用低压化学气相沉积方法在p型〈100〉晶向单晶硅上620℃制备纳米多晶硅薄膜,对不同薄膜厚度纳米多晶硅薄膜分别在700、800、900℃进行高温真空退火,通过X射线衍射(XRD)、Raman光谱(Raman)、场发射扫描电子显微镜(SEM)和原子力显微镜(AFM)研究薄膜厚度、退火温度对薄膜结晶取向、表面形貌等结构特性影响。结果表明,随薄膜厚度增加,薄膜取向显著且多晶特征明显,沉积薄膜多晶取向为〈111〉、〈220〉和〈311〉晶向,择优取向为〈111〉晶向,TO模强度减弱且加宽,晶粒大小增加;同一薄膜厚度,随真空退火温度升高,X射线衍射峰强度增强,TO模强度增强。     

Effects of annealing temperature on the structure and photoluminescence properties of ZnO films

Zinc oxide (ZnO) films with c-orientation were deposited on Si (1 1 1) substrates at room temperature (RT) by RF-magnetron sputtering. Violet (394 and 412 nm) and green (560 and 588 nm) photoluminescence (PL) were observed from the as-deposited and annealed samples. The PL intensity was increasing with increasing annealing temperature (T_a). The 412 nm violet peak shifted from 412 to 407 nm and the 394 nm violet peak shifted from 394 to 399 nm on increasing the temperature from 500 to 900 °C, whereas no shift in PL green peaks was observed over the whole range of temperature examined. The 412 nm violet luminescence is ascribed to radiative defects related to the interface traps existing at grain boundaries. With the increase of T_a, the stress in the films changed from compressive to tensile, which is believed to have resulted in the observed 412 nm violet emission peak shifts from 412-407 nm. The 394 nm violet luminescence observed is attributed to free excitonic emission, and the increase of the crystal size may result in the 394 nm violet emission peak shifts from 394 to 399 nm. The other two PL bands located at 560 and 588 nm are attributed to oxygen deficiency.     

Influence of annealing temperature on the properties of polycrystalline silicon films formed by rapid thermal annealing of a-Si:H films

In this work, rapid thermal annealing (RTA) was employed to crystallize the amorphous silicon films deposited by hot-wire chemical vapor deposition. The influence of annealing temperature on structural and electrical properties was studied by Raman spectroscopy, X-ray diffraction, scanning electron microscopy, Fourier transform infrared spectroscopy and temperature-dependent conductivity measurement. The results show that the amorphous silicon films can be successfully crystallized by RTA in a very short time. The crystallinity and electrical properties of the poly-Si films was greatly improved as the RTA temperature increasing. When the temperature higher than 900 °C, the poly-Si films obtained the crystalline fraction above 95 %, and the hydrogen atoms almost disappeared in the poly-Si films. At the temperature of 1,100 °C, polycrystalline silicon films with conductivity of 16.4 S cm^?1 is obtained, which is seven orders in magnitude higher than that of the film annealed at 700 °C.     

Effects of annealing temperature on microstructure and electrical properties of Mn-Co-Ni-O thin films

Mn_1.85Co_0.3Ni_0.85O₄ (MCN) thin films were prepared on Al₂O₃ substrates by chemical solution deposition method at different annealing temperature (650, 700, 750 and 800 °C). Effects of annealing temperature on microstructure and electrical properties of MCN thin films were investigated. The MCN thin film annealed at 750 °C is of good crystallization and compact surface. It shows lower resistance (4.8 MΩ) and higher sensitivity (3720.6 K) than those of other prepared films. It also has small aging coefficient (3.7%) after aging at 150 °C for 360 h. The advantages of good properties make MCN thin film very promising for integrated devices.     

Effect of annealing temperature and composition on photoluminescence properties of magnetron sputtered SiCN films

Silicon carbonitride (SiCN) films were prepared by means of reactive magnetron sputtering of a sintered SiC target on n-type Si (1 0 0) substrates in the reactant gas of nitrogen, and then the films were respectively annealed at 600, 800 and 1100 °C for 5 min in nitrogen ambient. The films were characterized by energy dispersive spectrometer, X-ray diffraction, Fourier transform infrared spectroscopy and photoluminescence (PL) spectrophotometry. Intense PL peaks at 370, 400 and 440 nm were observed at room temperature. The results show that annealing temperature and composition play an important role in the structures and PL properties of the films. The annealing temperature of 600 °C favors the formation of the SiC (1 0 9) crystal in the SiCN films, and results in a maximal PL peak. The intensity of the 440 nm PL peak can be improved by increasing the abundance of the Si-C bond.     

退火温度对ZnO:Al透明导电薄膜结构和性能的影响

采用溶胶-凝胶法(sol-gel)在普通载玻片上制备了ZnO∶Al薄膜,在200～600℃下退火.利用XRD、紫外-可见光-近红外分光光度计和电阻测试仪等分析方法研究了不同退火温度对薄膜结构和光电性能的影响.结果表明,退火温度在300℃以上,薄膜开始结晶,400℃以上,薄膜出现明显结晶,且沿(002)方向择优取向,随着退火温度升高,(002)峰的强度逐渐增强,晶粒尺寸逐渐增加;薄膜在可见光范围内的透过率均＞85%以上,退火温度高的薄膜在可见光范围内的透过率明显提高,光学带隙在3.32～3.54eV,且随着温度的升高而降低;薄膜的电阻率随退火温度的增高而有所降低,但是仍较高,在103俜cm量级.     

退火温度对硅基溅射银膜微结构和应力的影响

用直流溅射法在硅(111)基底上制备银膜，膜厚为380nm。用BGS6341型电子薄膜应力分布测试仪对膜应力随退火温度的变化进行了研究，结果表明：膜应力随着退火温度的升高而增大，在400℃退火温度下膜应力变化明显。用MXP18AHF型X射线衍射仪测量了膜的衍射谱，对膜微结构随退火温度的变化进行了讨论。制备的Ag膜仍为面心立方结构，呈多晶状态，平均晶粒尺寸为23．63nm，薄膜晶格常数(0．40805nm)比标准样品晶格常数(0．40862nm)稍小。     

Role of annealing temperature on microstructural and electro-optical properties of ITO films produced by sputtering

This study probes the effect of annealing temperature on electrical, optical and microstructural properties of indium tin oxide (ITO) films deposited onto soda lime glass substrates by conventional direct current (DC) magnetron reactive sputtering technique at 100 watt using an ITO ceramic target (In₂O₃:SnO₂, 90:10 wt%) in argon atmosphere at room temperature. The films obtained are exposed to the calcination process at different temperature up to 700 °C. X–ray diffractometer (XRD), ultra violet-visible spectrometer (UV–vis) and atomic force microscopy (AFM) measurements are performed to characterize the samples. Moreover, phase purity, surface morphology, optical and photocatalytic properties of the films are compared with each other. The results obtained show that all the properties depend strongly on the annealing temperature. XRD results indicate that all the samples produced contain the In₂O₃ phase only and exhibit the polycrystalline and cubic bixbite structure with more intensity of diffraction lines with increasing the annealing temperature until 400 °C; in fact the strongest intensity of (222) peak is obtained for the sample annealed at 400 °C, meaning that the sample has the greatest ratio I ₂₂₂/I ₄₀₀ and the maximum grain size (54 nm). As for the AFM results, the sample prepared at 400 °C has the best microstructure with the lower surface roughness. Additionally, the transmittance measurements illustrate that the amplitude of interference oscillation is in the range from 78 (for the film annealed at 400 °C) to 93 % (for the film annealed at 100 °C). The refractive index, packing density, porosity and optical band gap of the ITO thin films are also evaluated from the transmittance spectra. According to the results, the film annealed at 400 °C obtains the better optical properties due to the high refractive index while the film produced at 100 °C exhibits much better photoactivity than the other films as a result of the large optical energy band gap.