8-GHz Narrowband High-Temperature Superconducting Filter With High Selectivity and Flat Group Delay

This paper reports a development of a narrowband high-temperature superconducting filter with both high selectivity and flat group delay. The filter has a center frequency of 8.625 GHz and a 3-dB bandwidth of 42 MHz (a fractional bandwidth of 0.49%). In order to achieve both high band-edge steepness and excellent group-delay flatness, we introduce a 14-resonator quasi-elliptic function response with three pairs of transmission zeros (one pair for high selectivity and two pairs for flat group delay) in the cascaded quadruplet coupling structure. We also develop a novel low radiation resonator (double-folded resonator) to reduce the parasitic coupling and meet other requirements for the 8-GHz filter. The filter was fabricated on a 2-in-diameter 0.5-mm-thick MgO wafer with double-sided YBCO films. The measured results show a midband insertion loss of 1.6 dB and a return loss better than 15.5 dB. Band-edge steepness reaches over 11.7 dB/MHz at both the high- and low-frequency edges. The 60-dB rectangle ratio is less than 1.25. The out-of-band rejection is over 70 dB at 5.98 MHz from the 3-dB band edge. The variation of group delay is less than 23 ns over 33 MHz (78.5% of 3-dB bandwidth), and less than 30 ns over 34.5 MHz (82% of 3-dB bandwidth).      

An HTS Wideband Filter Using Interdigital-Like Resonators at UHF Band

A wideband superconducting interdigital-like filter at UHF band has been successfully designed and fabricated. An interdigital-like resonator is proposed to realize both strong coupling and compact size. A ten-pole demonstration high temperature superconducting filter is developed with a center frequency of approximately 340 MHz and a fractional bandwidth of 26%. The measurements show that the insertion loss of the filter is less than 0.2 dB, the return loss is better than 17 dB, and the out-of-band rejection is better than 70 dB.      

A Narrow Band Dual Mode HTS Patch Filter With High Power Capability

A novel structure is presented to optimize the design of narrow band dual mode patch filters. Using this method, a narrow band dual mode high power HTS filter with center frequency 2.015 GHz, fractional bandwidth less than 0.35%, return loss greater than 20 dB, near band-edge rejection close to ${-}45$ dB, and insertion loss less than 0.2 dB has been designed and fabricated. The filter can work at a power of 11.7 W without obvious deterioration of its transmission response.      

Adjustable multilayer HTS filters

An adjustable multilayer high-temperature superconductor (HTS) bandpass filter has been fabricated. Taped comb-line filters with multilayer structures were designed, YBa₂Cu₃O_7-δ (YBCO) thin films deposited on LaAlO₃ were used to construct the packaged multilayer HTS filter. The electrical length of the resonators in the filter was smaller than a quarter-wave length. The frequency responses of the filter were measured at liquid nitrogen temperature 77 K. The insertion loss of the packaged filter was determined to be less than 0.5 dB. By mechanically adjusting the multilayer structure, the center frequencies of the filter changed from 1.78 to 1.92 GHz, and the variations of the bandwidth from 60 to 150 MHz were also obtained     

一种宽带低损耗声表面波滤波器

阐述了一种利用纵向耦合双模制作宽带低损耗声表面波滤波器的方法，给出了理论计算方法和计算机模拟结果，最后给出了制作中心频率为４５３ＭＨｚ的声表面波滤波器实验结果，插入损耗为１．９ｄＢ，１ｄＢ带宽为６．６６ＭＨｚ，远端带外抑制大于４５ｄＢ。     

A low-loss bandpass filter using electrically coupled high-Q TM01δ dielectric rod resonators

For a TM_01δ mode dielectric rod resonator placed coaxially in a TM₀₁ cutoff circular waveguide, characteristics such as the resonant frequency, its temperature coefficient, the unloaded Q, and the other resonances are discussed on the bases of accurate calculations using the mode-matching method. The results show that this resonator compares favorably with a conventional TE_01δ mode dielectric resonator, particularly for realization of a high unloaded Q. Analytical results also verify that interresonator coupling between these two resonators can be expressed equivalently by a capacitively coupled LC resonant circuit. A four-stage Chebyshev filter having a ripple of 0.035 dB and an equiripple bandwidth of 27 MHz at a center frequency of 11.958 GHz was fabricated using these resonators. Its insertion loss is 0.5 dB, which corresponds to an unloaded Q of 17000, and no spurious response appears in the frequency range below 17 GHz     

Double-Layer Frequency Selective Surface for Terahertz Bandpass Filter

A thin, low-cost, double-layer frequency-selective surface (FSS) bandpass filter has been designed, fabricated, and measured for operation in the terahertz band. The present FSS structure is composed of double-layer tin foil with a hexagonal lattice array of circular holes. A flat passband is observed with a 3-dB bandwidth of 0.20 THz from 0.81 to 1.01 THz, which is about 22% relative to the center frequency. This bandpass filter based on double-layer FSS structures achieved average insertion loss of 0.7-dB and 106.31-dB/THz band-edge steepness. We have found good agreement between theoretical calculations and experimental results.     

110 GHz带通太赫兹滤波器设计

对滤波器的高精确度理论设计及小误差的工艺实现进行探讨与设计加工。总结了国内外的多种设计经验,讨论了多种类型的滤波器设计方案,选取适当的滤波器结构形式,设计加工了110 GHz的感性窗耦合波导滤波器,其中感性窗耦合结构采用传统机械加工技术实现,与法兰盘结构一并集成。基于高频结构仿真(HFSS)软件进行仿真,结果表明：设计并制作的110 GHz带通滤波器,其中心频率为110 GHz,相对带宽为5%,插入损耗小于1 dB,带内回波损耗大于 20 dB,距中心频率2倍带宽处,带外抑制大于40 dB。     

Design of a tapered coaxial resonator filter for mobilecommunications

The authors describe the design, a simple fabrication technique, and performance of a coaxial resonator filter with tapered inner conductors to be used in mobile radios. The effects of coupling, window area, and temperature on the performance of the filter have also been considered. The passband of the filter is 30 MHz with a center frequency of 925 MHz, 1.15-dB insertion loss, 0.8-dB ripple, and 14.7-dB return loss at the center frequency. The resonant frequency and coupling coefficient stabilities with temperature have been measured at 28.38 ppm/°C and 3.5×10^-4/°C, respectively. The 3-dB bandwidth is measured as 32 MHz and a sharp cutoff is observed at -16.5 dB with a bandwidth of 37 MHz for narrow scale and -65 dB with a bandwidth of 84 MHz for wide scale. The fabrication technique developed using a zinc-cast inner conductor and extruded aluminum outer conductor has better reproducibility than the conventional machining technique and is highly cost effective     

Multilayer Dual-Mode Dual-Bandpass Filter

A dual-mode dual-bandpass filter for the U-NII bands is proposed and demonstrated. Its effective size reduction is achieved by using a multilayer configuration. The first and the third layers incorporate microstrip dual-mode bandpass filters with operating center-frequencies of f₁ =5.2 GHz and f₂ =5.8 GHz, respectively. The second layer is used as a common ground plane for both filters, which also serves as a decoupling interface. Capacitive coupling transition is used to connect both filters to I/O coplanar waveguide (CPW) ports. Single and dual-band passband filter prototypes are designed, fabricated, and measured in this work, thus validating the design principle. Designed topologies of single passband filters with center frequencies of 5.2 and 5.8 GHz exhibit an out-of-band rejection better than 40 dB with a 3 dB bandwidth of 5.8% and 6%, respectively. The proposed multilayer dual-passband response with center frequencies of 5.2 and 5.8 GHz provide band-to-band isolation better than 30 dB. Measured insertion losses are lower than 2.76 dB, with 3 dB bandwidth lower than 5%.     

S 波段高性能微型滤波器的研究

应用LTCC多层耦合带状线谐振器和交叉耦合传输零点原理,在改进的三维梳状带通滤波器结构中引入交叉耦合,增强非相邻谐振级间的交叉耦合;在2、4谐振级间引入Z字形导体层,通过调节Z字形控制传输零点位置;同时适当调节加载电容大小,有效减小了滤波器体积,实现了高次谐波抑制、边带陡峭和通带内线性相位.采用低温共烧陶瓷(LTCC)技术设计制作了中心频率为3GHz,通带为200MHz的微型带通滤波器.实验和仿真结果表明,该滤波器的中心频率插入损耗小于2.6dB,阻带抑制高于40dB,边带陡峭,尺寸仅为4.8mm×4.2mm× 1.5mm.成品率高达85％.     

超宽带低损耗SAW滤波器的优化设计

该文介绍了基于大机电耦合系数乐甫波模式的超宽带低损耗声表滤波器的开发,基底为15°YX-LiNbO3晶体和铜电极。设计采用修正的耦合模模型进行精确仿真以及模拟退火算法进行谐振器参数的优化。通过假指电极宽度/长度加权来抑制横向模式谐振造成的寄生响应,通过在滤波器表面涂覆黏性膜来有效抑制瑞利波模式造成的寄生凹坑,最终制作出一款中心频率约620 MHz,插损0.94 dB,-1 dB相对带宽14.9%,-3 dB相对带宽18.3%,带外抑制大于40 dB性能较优良的器件。     

一种高性能腔体带通滤波器的研究与设计

为了抑制CDMA800网络下行频段的噪声,利用HFSS和二维电路仿真软件AWR的协同仿真,设计了同轴腔体滤波器,该滤波器利用交叉耦合结构实现了边带外的高抑制性能。所设计滤波器中心频率为875MHz,带宽10MHz;插入损耗〈-0．25dB;回波损耗〉-20dB;带外抑制〉-80dB,满足了设计要求。仿真结果表明：该滤波器结构设计尺寸小、频带宽、带外抑制高、带内插损小等,在通信领域具有良好的应用前景。     

A novel ultra-compact resonator for Superconducting thin-film filters

This paper proposes a novel thin-film resonator structure, which combines the microstrip resonator and the coplanar resonator to form an integrated resonator. This resonator structure has an extremely compact size, as compared to the thin-film resonator structures from the literature, and its resonant frequency was shown theoretically to be less sensitive to, or even insensitive to, the thickness of the substrate. An eight-pole quasi-elliptic filter based on this novel resonator was designed. The exact filter layout was simulated and optimized by full-wave electromagnetic simulation using IE3D software. The full-wave simulated filter response was in good agreement with the theoretical filter response. A filter was fabricated on a double-sided YBa/sub 2/Cu/sub 3/O/sub 7/ thin film epitaxially grown on a 2-in-diameter MgO wafer. The measured filter response showed a bandwidth of 1.5 MHz and a center frequency of 850.3 MHz at 78 K. The insertion loss at the passband center was 1 dB, corresponding to a filter Q of 28 000. Steep rejection slopes were obtained at the band edges and rejections reached over 70 dB in approximately 300 kHz from the passband edges. No pronounced changes were observed for input power levels between -20-0 dBm, indicating a relatively high power-handling capability of the filter.     

高带外抑制特性微波陶瓷波导滤波器的设计

介绍了陶瓷波导滤波器的设计理论,采用耦合通槽分别与浅、深耦合盲孔的组合结构来满足正、负耦合带宽要求,通过调整3~6腔体的交叉耦合来改善滤波器传输曲线的对称性,同时实现滤波器近端和远端的带外抑制,在此基础上设计了一款5G基站用六腔陶瓷波导滤波器。在该滤波器的优化过程中,详细讨论了3~6腔体交叉耦合通槽的相对位置偏移量和交叉耦合通槽的长度对滤波器传输零点位置、近端和远端带外抑制特性的影响,并给出了相关的变化规律。经优化后滤波器性能指标如下:中心频率为3.5 GHz,工作带宽为200 MHz,插入损耗≤1.2 dB,回波损耗≥17 dB,近端带外抑制≥25 dB,远端带外抑制≥51 dB。根据仿真模型结构参数制备得到的样品,其性能测试结果与仿真结果吻合良好。     

带有交叉耦合的平行四腔螺旋滤波器设计

针对螺旋滤波器的结构及耦合方式,采用平行四腔的直线形交叉耦合结构,在非相邻的一腔和四腔间添加控制部件,从而引入传输零点以提高带外抑制.用Ansoft HFSS软件设计并制作了一款体积为150mmx60mmx70mm,中心频率为380MHz的螺旋滤波器.测试结果表明,该滤波器的带内回波损耗大于20 dB,插损小于2dB,...     

小型化T 隔板多层基片集成波导滤波器设计

基于LTCC 工艺设计并制作了一种多层T 隔板基片集成波导(TSSIW)滤波器。该滤波器以TSSIW 谐振腔为基础,利用其灵活的同层与异层的耦合方式实现四阶交叉耦合结构,并节省60% 以上的电路面积。实验结果显示滤波器中心频率为9. 4 GHz,工作带宽为500 MHz,通带最小插入损耗小于2. 5 dB,回波损耗优于15 dB,表明该滤波器具有体积小、易于集成的特点,同时保持了TSSIW 优秀的频率选择性和寄生响应。     

Novel Broadband Bandpass Filters Using Y-Shaped Dual-Mode Microstrip Resonators

A Y-shaped dual-mode microstrip bandpass filter (BPF) with input-output cross-coupling is presented. The characteristic of the Y-shaped dual-mode resonator has been investigated. The resonance frequencies of the degenerate modes can be adjusted easily to satisfy the bandwidth of the BPF. A parallel-coupling feed structure with a cross coupling has been used to generate two transmission zeros at the lower and upper stopband, which can improve the out-of-band performance. A broadband dual-mode microstrip BPF has been designed, fabricated, and measured. The simulated and measured results are in agreement generally. Within the 3.1 to 5.4 GHz bandwidth, the measured insertion loss, return loss and group delay variation are below 0.5 dB, above 15 dB, and below 0.2 ns, respectively.      

0.22 THz Waveguide Bandpass Filter with High Stop-Band Suppression

A terahertz (THz) waveguide band-pass filter using an iris inductive window coupled structure was designed and fabricated. The filter was designed at 0.22 THz with a pass band of 20 GHz. The measured results show that the center frequency is 0.218 THz with a pass band of 0.205 THz to 0.231 THz, the minimum insertion loss is 1.26 dB at 0.224 THz, and the return loss is less than 13.1 dB. The stop-band suppression is 65.6 dB at 0.193 THz and 51.8 dB at 0.243 THz, respectively, which means a good performance of high stop-band suppression. A good agreement exists between the measured S-parameters and the simulated ones, especially in the upper band. The proposed THz waveguide filter has potential applications in THz communications.     

C波段WLP薄膜体声波滤波器的研制

该文研制了一种晶圆级封装(WLP)的C波段薄膜体声波谐振器(FBAR)滤波器。采用一维Mason等效电路模型对谐振器进行设计,并使用HFSS对电磁封装模型进行优化,再在ADS中对滤波器进行仿真优化设计,得到阶梯型结构的FBAR滤波器。采用空腔型结构并制备出FBAR滤波器芯片,同时利用覆膜工艺对FBAR裸芯片进行覆膜和电镀等WLP工艺,得到WLP的FBAR器件。测试结果表明,滤波器的中心频率为6.09 GHz,中心插损为2.92 dB,通带插损为3.4 dB,带宽为112 MHz,带外抑制大于40 dB。