High frequency electromechanical memory cells based on telescoping carbon nanotubes

A new method to increase the operational frequency of electromechanical memory cells based on the telescoping motion of multi-walled carbon nanotubes through the selection of the form of the switching voltage pulse is proposed. The relative motion of the walls of carbon nanotubes can be controlled through the shape of the interwall interaction energy surface. This allows the use of the memory cells in nonvolatile or volatile regime, depending on the structure of carbon nanotube. Simulations based on ab initio and semi-empirical calculations of the interwall interaction energies are used to estimate the switching voltage and the operational frequency of volatile cells with the electrodes made of carbon nanotubes. The lifetime of nonvolatile memory cells is also predicted.     

Resistive Switching in Nanogap Systems on SiO2 Substrates

Voltage‐controlled resistive switching in various gap systems on SiO₂ substrates is reported. The nanoscale‐sized gaps are made by several means using different materials including metals, semiconductors, and amorphous carbon. The switching site is further reduced in size by using multiwalled carbon nanotubes and single‐walled carbon nanotubes. The switching in all the gap systems shares the same characteristics. This independence of switching on the material compositions of the electrodes, accompanied by observable damage to the SiO₂ substrate at the gap region, bespeaks the intrinsic switching from post‐breakdown SiO₂. It calls for caution when studying resistive switching in nanosystems on oxide substrates, since oxide breakdown extrinsic to the nanosystem can mimic resistive switching. Meanwhile, the high ON/OFF ratio (≈10⁵), fast switching time (2 µs, tested limit), and durable cycles show promising memory properties. The observed intermediate states reveal the filamentary nature of the switching.     

Memory effect in an ionic liquid matrix containing single-walled carbon nanotubes and polystyrene

We report the use of an ionic liquid (IL) gel matrix containing a blend of single-walled carbon nanotubes (SWNTs) and polystyrene (PS) as a memory device. SWNTs and PS beads were mixed in a room-temperature IL, 1-butyl-3-methyl-hexafluorophosphate ([BMIM][PF(6)]). The composite gel was sandwiched between a bottom ITO glass and a top aluminium electrode. By merely changing the concentrations of SWNTs in the inert insulating PS matrix, we observed several distinct electrical properties of the device, such as an insulator, a memory in terms of switching and negative differential resistance (NDR), and a conductor. The electric bistable switching hops between a higher impedance (OFF) state and a lower impedance (ON) state which is approximately equal to five orders of current decays.     

Nanoscale memory cell based on a nanoelectromechanical switched capacitor

The demand for increased information storage densities has pushed silicon technology to its limits and led to a focus on research on novel materials and device structures, such as magnetoresistive random access memory and carbon nanotube field-effect transistors, for ultra-large-scale integrated memory. Electromechanical devices are suitable for memory applications because of their excellent 'ON-OFF' ratios and fast switching characteristics, but they involve larger cells and more complex fabrication processes than silicon-based arrangements. Nanoelectromechanical devices based on carbon nanotubes have been reported previously, but it is still not possible to control the number and spatial location of nanotubes over large areas with the precision needed for the production of integrated circuits. Here we report a novel nanoelectromechanical switched capacitor structure based on vertically aligned multiwalled carbon nanotubes in which the mechanical movement of a nanotube relative to a carbon nanotube based capacitor defines 'ON' and 'OFF' states. The carbon nanotubes are grown with controlled dimensions at pre-defined locations on a silicon substrate in a process that could be made compatible with existing silicon technology, and the vertical orientation allows for a significant decrease in cell area over conventional devices. We have written data to the structure and it should be possible to read data with standard dynamic random access memory sensing circuitry. Simulations suggest that the use of high-k dielectrics in the capacitors will increase the capacitance to the levels needed for dynamic random access memory applications.     

Ferroelectricity in highly ordered arrays of ultra-thin-walled Pb(Zr,Ti)O3 nanotubes composed of nanometer-sized perovskite crystallites

We report the first unambiguous ferroelectric properties of ultra-thin-walled Pb(Zr,Ti)O 3 (PZT) nanotube arrays, each with 5 nm thick walls and outer diameters of 50 nm. Ferroelectric switching behavior with well-saturated hysteresis loops is observed in these ferroelectric PZT nanotubes with P r and E c values of about 1.5 microC cm (-2) and 86 kV cm (-1), respectively, for a maximum applied electric field of 400 kV cm (-1). These PZT nanotube arrays (10 (12) nanotubes cm (-2)) might provide a competitive approach toward the development of three-dimensional capacitors for the terabyte ferroelectric random access memory.     

Flexible multilevel resistive memory with controlled charge trap B- and N-doped carbon nanotubes

B- and N-doped carbon nanotubes (CNTs) with controlled workfunctions were successfully employed as charge trap materials for solution processable, mechanically flexible, multilevel switching resistive memory. B- and N-doping systematically controlled the charge trap level and dispersibility of CNTs in polystyrene matrix. Consequently, doped CNT device demonstrated greatly enhanced nonvolatile memory performance (ON-OFF ratio >10(2), endurance cycle >10(2), retention time >10(5)) compared to undoped CNT device. More significantly, the device employing both B- and N-doped CNTs with different charge trap levels exhibited multilevel resistive switching with a discrete and stable intermediate state. Charge trapping materials with different energy levels offer a novel design scheme for solution processable multilevel memory.     

Multistate resistive switching in silver nanoparticle films

Resistive switching devices have garnered significant consideration for their potential use in nanoelectronics and non-volatile memory applications. Here we investigate the nonlinear current–voltage behavior and resistive switching properties of composite nanoparticle films comprising a large collective of metal–insulator–metal junctions. Silver nanoparticles prepared via the polyol process and coated with an insulating polymer layer of tetraethylene glycol were deposited onto silicon oxide substrates. Activation required a forming step achieved through application of a bias voltage. Once activated, the nanoparticle films exhibited controllable resistive switching between multiple discrete low resistance states that depended on operational parameters including the applied bias voltage, temperature and sweep frequency. The films’ resistance switching behavior is shown here to be the result of nanofilament formation due to formative electromigration effects. Because of their tunable and distinct resistance states, scalability and ease of fabrication, nanoparticle films have a potential place in memory technology as resistive random access memory cells.     

Multistate resistive switching in silver nanoparticle films

Abstract

Resistive switching devices have garnered significant consideration for their potential use in nanoelectronics and non-volatile memory applications. Here we investigate the nonlinear current–voltage behavior and resistive switching properties of composite nanoparticle films comprising a large collective of metal–insulator–metal junctions. Silver nanoparticles prepared via the polyol process and coated with an insulating polymer layer of tetraethylene glycol were deposited onto silicon oxide substrates. Activation required a forming step achieved through application of a bias voltage. Once activated, the nanoparticle films exhibited controllable resistive switching between multiple discrete low resistance states that depended on operational parameters including the applied bias voltage, temperature and sweep frequency. The films’ resistance switching behavior is shown here to be the result of nanofilament formation due to formative electromigration effects. Because of their tunable and distinct resistance states, scalability and ease of fabrication, nanoparticle films have a potential place in memory technology as resistive random access memory cells.     

Carbon nanotube linear bearing nanoswitches

We exploit the remarkable low-friction bearing capabilities of multiwalled carbon nanotubes (MWNTs) to realize nanoelectromechanical switches. Our switches consist of two open-ended MWNT segments separated by a nanometer-scale gap. Switching occurs through electrostatically actuated sliding of the inner nanotube shells to close the gap, producing a conducting ON state. For double-walled nanotubes in particular, a gate voltage can restore the insulating OFF state. Acting as a nonvolatile memory element capable of several switching cycles, our devices are straightforward to implement, self-aligned, and do not require complex fabrication or geometries, allowing for convenient scalability.     

Formation and rupture of Ag conductive bridge in ZrO2-based resistive switching memory

ZrO2-based resistive switching memory has attracted much attention according to its possible application in the next-generation nonvolatile memory. However, the resistive switching mechanism of the ZrO2-based memory device is still controversial. In this study, the mechanism of the ZrO2-based memory device is demonstrated that the resistive switching occurs because of the migration of Ag+ ions. While a positive voltage is applied, Ag+ ions in the ZrO2 film migrate to connect the Pt bottom electrode, causing the formation of Ag conductive bridge. On the other hand, while a negative voltage is applied, Ag+ ions migrate toward the Ag top electrode, leading to the rupture of the Ag conductive bridge. In addition, the resistive switching properties of the ZrO2-based memory device, such as switching voltages and non-destructive readout property, are also demonstrated in this study. Based on the experimental results, the ZrO2-based memory device with clear resistive switching mechanism can be possibly used in the next-generation nonvolatile memory.     

Influence of metal nanoparticle decorated CNTs on polyurethane based electro active shape memory nanocomposite actuators

Polymer nanocomposites based on thermoplastic polyurethane (PU) elastomer and metal nanoparticle (Ag and Cu) decorated multiwall carbon nanotubes (M-CNTs) were prepared through melt mixing process and investigated for its mechanical, dynamic mechanical and electro active shape memory properties. Structural characterization and morphological characterization of the PU nanocomposites were done using X-ray diffraction (XRD) and scanning electron microscopy (SEM). Morphological characterization revealed better dispersion of M-CNTs in the polyurethane, which is attributed to the improved interaction between the M-CNTs and polyurethane. Loading of the metal nanoparticle coated carbon nanotubes resulted in the significant improvement on the mechanical properties such as tensile strength of the PU composites in comparison to the pristine carbon nanotubes (P-CNTs). Dynamic mechanical analysis showed that the glass transition temperature (Tg) of the polyurethane increases slightly with increasing loading of both pristine and metal nanoparticle functionalized carbon nanotubes. The metal nanoparticles decorated carbon nanotubes also showed significant improvement in the thermal and electrical conductivity of the PU/M-CNTs nanocomposites. Shape memory studies of the PU/M-CNTs nanocomposites exhibit remarkable recoverability of its shape at lower applied dc voltages.     

CdZnTe晶体中微米级富Te相与PL谱的对应关系

采用红外透过显微镜(IRTM)观察了不同条件下生长的CdZnTe晶体中微米级富Te颗粒.结合实际生长条件分析了不同富Te颗粒的产生以及形态演化.通过低温光致发光(PL)谱研究了CdZnTe晶体中杂质、缺陷的状态,以及晶体的结晶质量,并测试了相应晶体的电阻率.归纳出不同富Te颗粒的产生与对应晶体10 K温度下PL谱中特征...     

A Strategy to Design High‐Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials

The demand for high memory density has increased due to increasing needs of information storage, such as big data processing and the Internet of Things. Organic–inorganic perovskite materials that show nonvolatile resistive switching memory properties have potential applications as the resistive switching layer for next‐generation memory devices, but, for practical applications, these materials should be utilized in high‐density data‐storage devices. Here, nanoscale memory devices are fabricated by sequential vapor deposition of organolead halide perovskite (OHP) CH₃NH₃PbI₃ layers on wafers perforated with 250 nm via‐holes. These devices have bipolar resistive switching properties, and show low‐voltage operation, fast switching speed (200 ns), good endurance, and data‐retention time >10⁵ s. Moreover, the use of sequential vapor deposition is extended to deposit CH₃NH₃PbI₃ as the memory element in a cross‐point array structure. This method to fabricate high‐density memory devices could be used for memory cells that occupy large areas, and to overcome the scaling limit of existing methods; it also presents a way to use OHPs to increase memory storage capacity.     

The electrical properties of cadmium phosphate glasses at high electric fields

The cadmium phosphate glasses previously described by the authors are further examined in relation to their electrical conduction properties at high applied fields and also when the fields are sufficiently high for memory switching to occur. The conduction at high electric fields (>2×10⁴ V cm⁻¹) is believed to be due to thermally activated hopping of electrons and to field-lowering at the electrodes as predicted by Schottky. The relative significance of the Schottky and Poole-Frenkel processes is discussed. The memory switching observed in thin samples at high applied fields is shown by electron diffraction studies to be associated with field-induced crystallization of a localized region of the glass film.     

Diode-less bilayer oxide (WO(x)-NbO(x)) device for cross-point resistive memory applications

The combination of a threshold switching device and a resistive switching (RS) device was proposed to suppress the undesired sneak current for the integration of bipolar RS cells in a cross-point array type memory. A simulation for this hybrid-type device shows that the matching of key parameters between switch element and memory element is an important issue. Based on the threshold switching oxides, a conceptual structure with a simple metal-oxide?1-oxide?2-metal stack was provided to accommodate the evolution trend. We show that electroformed W-NbO(x)-Pt devices can simultaneously exhibit both threshold switching and memory switching. A qualitative model was suggested to elucidate the unique properties in a W-NbO(x)-Pt stack, where threshold switching is associated with a localized metal-insulator transition in the NbO(x) bulk, and the bipolar RS derives from a redox at the tip of the localized filament at the WO(x)-NbO(x) interface. Such a simple metal-oxide-metal structure, with functionally separated bulk and interface effects, provides a fabrication advantage for future high-density cross-point memory devices.     

Electro-active shape memory properties of poly(ε-caprolactone)/functionalized multiwalled carbon nanotube nanocomposite

One type of electroactive shape memory nanocomposite was fabricated, including cross-linked poly(ε-caprolactone) (cPCL) and conductive multiwalled carbon nanotubes (MWNTs). The cross-linking reaction of the pristine poly(ε-caprolactone) (PCL) was realized by using benzoyl peroxide (BPO) as an initiator. The raw MWNTs (Raw-M) were prefunctionalized by acid-oxidation process and covalent grafting with poly (ethylene glycol) (PEG), respectively. Three kinds of nanocomposites containing cPCL/Raw-M, cPCL/acid-oxidation MWNTs (AO-M) and cPCL/PEG grafted MWNTs (PEG-M) were obtained, and the mechanical, electrical and shape memory properties were further investigated. The influence of in vitro degradation on their shape memory and mechanical properties was also evaluated. The methyl thiazolyl tetrazolium (MTT) assay was performed to estimate their biocompatibility. The results displayed that these nanocomposites could perform favorable shape memory recovery both in hot water at 55 °C and in electric field with 50 V applied voltage. In addition, compared with cPCL/Raw-M and cPCL/AO-M, cPCL/PEG-M composite possessed more favorable properties such as mechanical, biocompatible, and electroactive shape memory functions. Therefore, the nanocomposite may be potential for application as smart bioactuators in biomedical field.     

Capacity based nondestructive readout for complementary resistive switches

Complementary resistive switches (CRS) were recently suggested to solve the sneak path problem of larger passive memory arrays. CRS cells consist of an antiserial setup of two bipolar resistive switching cells. The conventional destructive readout for CRS cells is based on a current measurement which makes a considerable call on the switching endurance. Here, we report a new approach for a nondestructive readout (NDRO) based on a capacity measurement. We suggest a concept of an alternative setup of a CRS cell in which both resistive switching cells have similar switching properties but are distinguishable by different capacities. The new approach has the potential of an energy saving and fast readout procedure without decreasing cycling performance and is not limited by the switching kinetics for integrated passive memory arrays.     

Photo-stimulated resistive switching of ZnO nanorods

Resistive switching memory devices are promising candidates for emerging memory technologies because they yield outstanding device performance. Storage mechanisms for achieving high-density memory applications have been developed; however, so far many of them exhibit typical resistive switching behavior from the limited controlling conditions. In this study, we introduce photons as an unconventional stimulus for activating resistive switching behaviors. First, we compare the resistive switching behavior in light and dark conditions to describe how resistive switching memories can benefit from photons. Second, we drive the switching of resistance not by the electrical stimulus but only by the modulation of photon. ZnO nanorods were employed as a model system to demonstrate photo-stimulated resistive switching in high-surface-area nanomaterials, in which photo-driven surface states strongly affect their photoconductivity and resistance states.     

Flexible,Semitransparent, and Inorganic Resistive Memory based on BaTi0.95Co0.05O3 Film

Perovskite ceramics and single crystals are commonly hard and brittle due to their small maximum elastic strain. Here, large‐scale BaTi_0.95Co_0.05O₃ (BTCO) film with a SrRuO₃ (SRO) buffered layer on a 10 µm thick mica substrate is flexible with a small bending radius of 1.4 mm and semitransparent for visible light at wavelengths of 500–800 nm. Mica/SRO/BTCO/Au cells show bipolar resistive switching and the high/low resistance ratio is up to 50. The resistive‐switching properties show no obvious changes after the 2.2 mm radius memory being written/erased for 360 000 cycles nor after the memory being bent to 3 mm radius for 10 000 times. Most importantly, the memory works properly at 25–180 °C or after being annealed at 500 °C. The flexible and transparent oxide resistive memory has good prospects for application in smart wearable devices and flexible display screens.     

Interfacial phase-change memory

Phase-change memory technology relies on the electrical and optical properties of certain materials changing substantially when the atomic structure of the material is altered by heating or some other excitation process. For example, switching the composite Ge(2)Sb(2)Te(5) (GST) alloy from its covalently bonded amorphous phase to its resonantly bonded metastable cubic crystalline phase decreases the resistivity by three orders of magnitude, and also increases reflectivity across the visible spectrum. Moreover, phase-change memory based on GST is scalable, and is therefore a candidate to replace Flash memory for non-volatile data storage applications. The energy needed to switch between the two phases depends on the intrinsic properties of the phase-change material and the device architecture; this energy is usually supplied by laser or electrical pulses. The switching energy for GST can be reduced by limiting the movement of the atoms to a single dimension, thus substantially reducing the entropic losses associated with the phase-change process. In particular, aligning the c-axis of a hexagonal Sb(2)Te(3) layer and the 〈111〉 direction of a cubic GeTe layer in a superlattice structure creates a material in which Ge atoms can switch between octahedral sites and lower-coordination sites at the interface of the superlattice layers. Here we demonstrate GeTe/Sb(2)Te(3) interfacial phase-change memory (IPCM) data storage devices with reduced switching energies, improved write-erase cycle lifetimes and faster switching speeds.