硅基板上Fe掺杂TiO2氧敏薄膜的制备、结构与性能研究

采用溶胶-凝胶法,以Ti(OC₄H₉)₄为前驱体,用提拉法在硅基板上制备了掺Fe的TiO₂氧敏薄膜,对薄膜物相结构进行了X射线衍射(XRD)测定,利用扫描电镜(SEM)对薄膜微结构进行了观察.结果表明:在硅基板上生长的TiO₂薄膜中锐钛矿相为均匀小晶粒分布结构,金红石相以大尺度团聚结构形貌出现.Fe离子的掺杂对硅基板上制备的TiO₂薄膜中金红石相的形成有很大的影响.Fe的掺入降低了金红石相的形成温度约100℃,Fe掺量在6mol% 时,形成金红石相的量达到最大,即析晶能力最强.薄膜中形成晶相的晶格常数在<6mol%的低Fe范围内,随较小的Fe离子取代较大的Ti离子,锐钛矿相和金红石相的晶格常数都随之减小;在>6mol%的高Fe掺量范围内,随Fe掺量的增加,体系缺陷过量增加,晶格结构畸变严重,伴随着畸变能的释放,金红石相的晶格常数c轴逐渐增长,n轴略有下降(或基本不变). TiO₂氧敏薄膜的氧敏性能受金红石相含量和氧空位浓度控制.当Fe离子掺杂浓度为6mol% 时,金红石相及相应氧空位达到最大值,TiO₂氧敏薄膜的氧敏性能也达到最大值,比刚形成金红石相的薄膜的氧敏性能增加近19倍.     

X-ray photoelectron spectroscopy study and humidity sensing properties of Zn doped SnO2 thin films

Undoped and Zn-doped SnO₂ thin films are deposited onto glass substrates by sol–gel spin coating method. All the films are characterized by X-ray photon spectroscopy (XPS) and Fourier transform infra-red spectroscopy (FTIR). XPS shows that Sn presence as valence of Sn⁴⁺ in the prepared SnO₂ thin films instead of Sn²⁺. In addition, it also exhibits the amount of Zn in SnO₂ thin films, which increases with increasing Zn doping percentage. The Zn (2P_3/2) peak is symmetric and centred at around 1,021.73 eV which shifts to the lower binding energy of 1,020.83 eV for 15 at.% Zn doped SnO₂ thin film. FTIR study is used to describe the local environment of undoped and Zn-doped SnO₂ thin films which also confirms the synthesis of undoped and Zn-doped SnO₂ thin films. It is found that the resistance of SnO₂ thin films increases as Zn doping concentration increases at room humidity. The resistance of all the samples increases as relative humidity (RH) increases. The sensitivity of SnO₂ thin films increases as RH increases while it decreases as Zn doping percentage increases. Response time of SnO₂ thin film decreases as Zn doping percentage increases and recovery time slightly increases with doping percentage.     

缺陷诱导的Cr掺杂TiO2纳米粉末的铁磁性

用溶胶-凝胶法制备了金红石 Ti_1-xCr_xO₂ (x=0、0.04、0.08) 纳米粉末。磁性测量结果显示, 制备的 Cr 掺杂金红石 TiO₂ 纳米粉末具有室温铁磁性, 样品 x=0.04 和0.08 的饱和磁化强度M_s分别为 0.55×10^-3和 1.6×10^-3 emu/g, (emu/g=4π×10^-7Wb•m/kg)矫顽力H_c分别为 220和 40 Oe(Oe=10³/(4π)A/m)。Cr 掺杂量较大的样品的饱和磁化强度较大, 在 Ar 气中退火可以使粉末呈超顺磁性。Cr2p 区域的密集扫描 X 射线光电子能谱 (XPS)分析显示, 在所有的样品中 Cr都是以Cr³⁺存在。电子顺磁共振谱 (EPR)分析表明, 样品中的 Cr³⁺ 离子仅对其顺磁性有贡献。这些结果提示, 粉末微弱的室温铁磁性来源于掺杂引入的结构缺陷, 其中, 氧空位起重要作用。     

实验优化设计中频反应溅射Al2O3:Ce薄膜发光性质研究

为了得到最优发光的薄膜材料成分参数,采用均匀设计和二次通用旋转组合设计相结合的方法建立发光强度与薄膜中氧含量和Ce³⁺ 离子掺杂浓度的回归方程,并用遗传算法求其取最大值时的解。用中频反应磁控溅射技术制备了相应成分的Al₂O₃:Ce非晶薄膜。在320nm光激发下,获得了较理想的发射光谱,对薄膜发光机理分析表明:薄膜的光致发光来自于Ce³⁺ 离子的5d1激发态向基态4f1的两个劈裂能级的跃迁。发光强度强烈的依赖于薄膜的掺杂浓度和氧元素含量。XPS检测表明,Al₂O₃:Ce薄膜中存在Ce³⁺ 。Ce³⁺ 含量和薄膜的化学成分是通过X射线散射能谱(EDS)测量的。薄膜试样的晶体结构应用X射线衍射分析。     

预涂SiO2的二氧化钛薄膜光催化活性与结构关系

载玻片上浸涂一层常温常压合成的SiO2溶胶后再浸涂TiO2溶胶制备预涂SiO2的TiO2薄膜光催化剂,结果发现浸涂一层SiO2会诱导金红石相TiO2生成,并使TiO2光催化活性提高71．75％,但预涂二层SiO2的TiO2薄膜仅有锐钛型且光催化活性较纯TiO2薄膜降低。这说明适量金红石型／锐钛型的混晶型TiO2具有更好的光催化活性。对TiO2微结构分析显示,TiO2薄膜点阵应变越大,薄膜光催化性能越好。X射线光电子能谱研究表明,预涂一层SiO2的Ti02薄膜Ti^3 含量较纯TiO2薄膜高,预涂二层SiO2的TiO2薄膜Ti^3 含量较纯TiO2薄膜低。扫描电镜分析说明,预涂SiO2的TiO2薄膜表面颗粒粒径较纯TiO2薄膜更小,薄膜颗粒粒径与光催化活性不是简单的一一对应关系。     

金属Cd~(2+)掺杂TiO_2纳米颗粒的制备及能级结构的影响机理

采用溶胶-凝胶法制备了Cd2+掺杂改性TiO2纳米颗粒,利用XRD、TEM、XPS和UV-Vis光谱对掺杂前后颗粒的结构和性能进行了表征。结果表明,溶胶-凝胶法制备的Cd2+掺杂TiO2纳米颗粒主要为锐钛矿相,粒径尺寸在20nm左右,掺杂前后TiO2的尺寸和形貌没有明显变化;结构表征和光谱测试结果发现,Cd元素在TiO2纳米颗粒中部分取代TiO2晶格中的Ti元素,以Cd2+的形式存在,形成Cd—O键,使TiO2纳米颗粒的吸收带边红移,降低了TiO2的禁带宽度。并且采用基于密度泛函理论的第一性原理对Cd掺杂TiO2进行了能级结构的模拟计算,发现理论结果与实验结果有较好一致性。     

La/TiO2-SiO2薄膜的光催化性能研究

采用溶胶-凝胶法制备了不同掺杂量的La／TiO2-SiO2复合薄膜．通过XRD、FE-SEM和AFM研究了复合薄膜的微观结构，采用紫外光照射下亚甲基蓝的分解实验比较薄膜的光催化性能．结果表明：La掺杂可显著提高TiO2-SiO2复合薄膜的光催化活性，以5％掺杂量为最佳，其光降解率比掺杂前提高了约23％．薄膜活性提高的主要原因是La掺杂后细化了TiO2的晶粒，提高了薄膜的比表面积，使其具有更高的氧化还原电势，La^3＋取代Ti^4＋进入到TiO2晶格，引起晶格膨胀，这种不同价离子的取代导致TiO2粒子表面电荷分布不平衡，从而提高了光生电子-空穴的分离效率．     

TiO2/SnO2复合薄膜的亲水性能研究

采用溶胶-凝胶法制备了TiO₂/SnO₂复合薄膜,通过XRD、XPS、UV透射光谱的分析及薄膜表面接触角、光催化降解甲基橙等的分析,研究了SnO₂与TiO₂配比、热处理温度、膜厚度等因素对复合膜的亲水性、透光率及光催化活性的影响.结果表明:复合膜的亲水性和光催化活性均优于单纯TiO₂,当SnO₂与TiO₂的摩尔比为1％～5％时,所制备的薄膜具有超亲水特性;热处理温度为450℃时薄膜亲水性最好,膜厚度的增加有利于亲水性的改善.     

Zn2+掺杂诱导Eu3+激活BiOCl层状半导体的反常发光性能研究

采用固相法在500℃下成功制备Zn²⁺掺杂BiOCl:Eu³⁺层状半导体, 并研究了Zn²⁺ (0~20mol%)掺杂对Eu³⁺激活BiOCl层状半导体发光性能的影响。利用X射线衍射(XRD)、X射线光电子能谱(XPS)、扫描电镜(SEM)、傅里叶变换红外光谱(FT-IR)、激发-发射光谱、荧光寿命衰减曲线对样品的结构和性能进行表征。研究发现, 随Zn²⁺掺杂浓度增大, BiOCl晶体结构不变, Eu³⁺荧光寿命延长, 但发光强度却出现先减后增的反常现象。综合分析表明这可能与BiOCl特殊的层状结构有关。通过XRD和XPS的表征可以推断: 当Zn²⁺掺杂浓度≤10mol%, Zn²⁺在BiOCl中掺杂方式以晶胞层间隙掺杂为主; 当Zn²⁺掺杂浓度>10mol%后, 掺杂方式逐渐向取代掺杂转变。两种掺杂机制对Eu³⁺荧光寿命的改变以及形成缺陷对基质能量传递效率的影响可能是形成上述反常现象的主要原因。研究结果有助于认识稀土掺杂层状半导体的发光性能及影响规律, 并对Eu³⁺掺杂BiOCl这类新型发光材料的开发设计具有指导意义。     

Photocatalytic properties of Au/TiO2 thin films prepared by RF magnetron co-sputtering

Au/TiO₂ thin films with various Au doping contents were deposited on quartz substrates by radio frequency (RF) magnetron co-sputtering. The as-deposited Au/TiO₂ films were characterized by energy-dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), XRD, and UV-vis techniques. Au doping and UV treatment enhanced the photocatalytic efficiency of TiO₂ thin films. The optimal RF power of the Au target and UV treatment time were 5 W and 1 h, respectively. The enhanced photoactivity of Au(5 W)/TiO₂ thin films with UV treatment is found to result from the increased hydroxyl concentration.     

Mn2+掺杂多孔CdIn2S4光催化剂的制备及催化制氢性能

为提高光催化剂的比表面积,以十二烷基磺酸钠(SDS)为模板剂,采用水热法制备出系列Mn2+掺杂的CdIn2S4多孔光催化剂.通过XRD、FESEM、UV-Vis、XPS等分析手段对催化剂进行了表征,考察了掺杂Mn2+浓度对多孔CdIn2S4光催剂的形貌结构和可见光催化产氢性能的影响.结果表明,Mn2+掺杂影响催化剂的晶...     

A Study of the Structural, Optical and Electrical Properties of SnS Thin Films Modified by Plasma

SnS thin films were deposited by chemical bath deposition technique and treated using glow discharge 02 plasma. The pressure discharge was 3 Torr, discharge voltage of 2.5 kV and 20 mA of discharge current. The as-deposited and treated thin films were characterized by X-ray diffraction, scanning electron microscopy and energy dispersive X-ray analysis. The photoconductivity and electrical effects of SnS have been studied. The SnS thin films had an orthorhombic crystalline structure. The optical gap changed from 1.61 to 1.84 eV due to the 02 plasma treatment. The conductivity shows a marked increase with the treatment, from 2.56×10^-6 （Ω·cm）-1 for as-deposited film until 0.10 （Ω·cm）-1 for the film treated at 180 rain. This result is a suitable range of conductivity for the improvement of the solar cell with SnS as an absorber material.     

Nb、K共掺对BiFeO3纳米晶体结构和磁性的影响

采用溶胶-凝胶法制备Bi_(1-x)K_xFe_(1-x)Nb_xO_3(0≤x≤0.05)纳米晶体,并研究Nb、K共掺杂对BiFeO_3样品晶格结构和磁学性质的影响。根据XRD图谱和Rietveld精修可知,所有样品保持R3c相,晶格常数a、c,晶胞体积V和Fe-O-Fe发生微弱的变化。XPS测量显示,少量的Nb、K共掺杂不引起样品中Fe~(3+)和Fe~(2+)比例的变化。磁测量表明,所有掺杂样品的磁性都得到了增强。当掺杂量x=0.01时,剩余磁化强度Mr达到最大值,Mr=0.1978emu/g,相比于纯BiFeO_3增大了18倍。低掺杂时剩余磁化强度Mr增大,可能是由于掺杂样品中存在束缚磁极化子引起的。     

锂离子电池正极材料Li3V2-2x/3Mnx（PO4）3的溶胶凝胶法合成和电化学性能

以CH3COOLi·2H2O、V2O5、Mn(CH3COO)2·4H2O、(NH4)2HPO4和蔗糖为原料,采用溶胶–凝胶法合成了掺锰磷酸钒锂/碳(Li3V2-2x/3Mnx(PO4)3/C)复合正极材料,用XRD、XPS、SEM、电化学性能对样品进行了表征.测试结果表明,少量锰的掺杂并未改变Li3V2(PO4)3/C的单斜结构,Li3V1.94Mn0.09(PO4)3中的Mn和V分别以+2和+3价存在,其颗粒类似球形,直径比较均匀且小于200 nm,并表现出良好的电化学性能.在0.1C倍率和3.0～4.8 V电压内,该样品的首次充、放电容量分别为182.1和168.8 mAh/g,放电效率高达92.69%,而且100次循环后,其放电比容量仍是首次放电容量的77.4%.     

TiO2/SnO2复合薄膜光诱导超亲水性机理的XPS研究

利用X射线光电子能谱仪对用溶胶-凝胶法制备的TiO2/SnO2复合薄膜的表面化学状态进行分析,结果表明:热处理及紫外光照前后,薄膜表面的化学状态均发生了变化,薄膜表面的碳氧或过氧化物基团增加,这些基团具有较强的活性,通过氢键和水中的极性基团作用,产生超亲水性.此外,掺杂SnO2提高了TiO2/SnO2复合薄膜的表面能,改变了薄膜表面的化学结构,使TiO2薄膜获得了较好的亲水性能和催化活性.     

Evaluation of Two Si Layers Simultaneously Crystallized LTPS-TFT Memory by the Green Laser Irradiation

Low temperature polyclstaline Si thin film transistor （LTPS-TFT） used for a liquid crystal display （LCD） is obtained by crystallizing a-Si （amorphous Si）. Although excimer laser is commonly used for crystallization, green laser crystallization attracts attention in recent years due to two a-Si layers in staked substrate （a-Si/SiO2/a-Si/quartz） are crystallized only by one time of irradiation. In order that this stacked layer structure is the same as the structure of a flash memory, this technology is applied to improvement in a performance of a flash memory. As a result, even when laser irradiation from the back is performed, two Si layers simulataneous crystallization is possible. Compared with the irradiation from front, the field-effect mobilities of the irradiation from the back improved about 10 times. Furthermore, in order that the retention time is improving significantly, it indicated that the quality of the oxide film between two layers improves. This technology is a technology promising for the improvement in a performance of a flash memory.     

Mg掺杂ZnO纳米棒阵列的场发射性能研究

采用水热法在硝酸锌(Zn(NO3)2·6H2O)与硝酸镁(Mg(NO3)2·6H2O)的生长液中制备了Mg掺杂的Mg/ZnO(MZO)纳米棒,其中生长液中Mg2+的物质的量浓度c(Mg2+)分别为0.05 mol/L、0.10 mol/L、0.25 mol/L和0.50 mol/L.利用场发射电子显微镜(FESEM)、X射线光电子能谱仪(XPS)、X射线衍射仪(XRD)、光致发光谱(PL)测试及场发射测试对所制备的MZO纳米棒的表面形貌、成分、晶体结构、光学性能及场发射性能进行了研究.结果表明:随着生长液中c(Mg2+)的增加,MZO纳米棒的直径逐渐减小、缺陷逐渐增加;且掺入的Mg含量与c(Mg2+)并不成正比关系;当生长液中的c(Mg2+)为0.10 mol/L时,所制备的MZO纳米棒的场发射性能最好,其开启场强为2.85 V/μm.     

掺银TiO2薄膜的亲水特性

采用溶胶—凝胶法及浸渍提拉法在普通的载玻片上制得含不同掺银量的TiO2薄膜，通过对薄膜及相应粉体的XRD、XPS及薄膜致密度的测量，分析了银的掺杂量对TiO2薄膜亲水特性的影响。结果表明：TiO2薄膜中银的掺杂量≤0．635mol％时有利于TiO2薄膜亲水性能的改善；表面羟基和表面桥氧的含量对TiO2薄膜的亲水性能均有直接影响。     

Influence of Fe dopant concentration and annealing temperature on the structural and optical properties of ZnO thin films deposited by sol–gel method

Nanostructured Fe doped ZnO thin films were deposited onto glass substrates by sol–gel spin coating method. Influence of Fe doping concentration and annealing temperature on the structural, compositional, morphological and optical properties were investigated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), UV–Vis spectroscopy and photoluminescence (PL) measurements. XRD analysis showed that all the films prepared in this work possessed a hexagonal wurtzite structure and were preferentially oriented along the c-axis. Pure ZnO thin films possessed extensive strain, whereas Fe doped films possessed compressive strain. In the doped films, least value of stress and strain was observed in the 0.5 at.% Fe doped thin film, annealed at 873 K. Average crystallite size was not significantly affected by Fe doping, but it increased from 15.57 to 17.79 nm with increase in annealing temperature from 673 to 873 K. Fe ions are present in +3 oxidation state as revealed by XPS analysis of the 0.5 at.% Fe doped film. Surface morphology is greatly affected by changes in Fe doping concentration and annealing temperature which is evident in the SEM images. The increase in optical band gap from 3.21 to 3.25 eV, with increase in dopant concentration was attributed to Moss–Burstein shift. But increase in annealing temperature from 673 to 873 K caused a decrease in band gap from 3.22 to 3.20 eV. PL spectra showed emissions due to excitonic combinations in the UV region and defect related emissions in the visible region in all the investigated films.     

Sol-Gel法制备低阻SnO2薄膜

采用sol-gel法制备了SnO2薄膜。研究了不同的实验条件对薄膜阻值的影响。利用XRD、XPS分析了薄膜的晶体结构和晶粒尺寸。利用这种低阻SnO2薄膜制作的热线型气敏元件对H2S具有较好的气敏特性。