单自触发脉冲激光测距技术

基于自触发脉冲飞行时间激光测距方法,本文提出并系统性的研究了单自触发脉冲激 光测距技术(SSTPLR) 。根据不同的单自触发方式,提出了反向单自触发和同向单自触发脉冲激光测距技术。设计了各自的实验测距系统,在3m 距离范围内,实现了误差分别为0.96mm 和0. 62mm 的激光测距。     

自触发脉冲飞行时间激光测距技术研究

提出了一种新型脉冲激光测距方法--自触发脉冲飞行时间激光测距方法.该方法有效解决了传统脉冲激光测距法中存在的提高测距精度和缩短测量时间两者之间的矛盾.对该方法及本质特点进行了详细描述和理论分析,并给出用以描述该方法的基本方程.最后,给出了实验装置,在20 m范围内获得了0.5 mm的测距精度.     

一种与标准CMOS工艺兼容的光电集成接收机设计与实现

设计了一种与标准CMOS工艺完全兼容的高速光电探测器和宽带光电集成接收机,并采用0.6μm标准CMOS工艺流片. 测试结果表明,该光电集成接收机的性能已接近实用要求. 探测器的频率响应带宽为1.11GHz,光电集成接收机的3dB带宽为733MHz;在误码率为10-12条件下,对波长为850nm的输入光信号,灵敏度达到-9dBm.     

一种与标准CMOS工艺兼容的光电集成接收机设计与实现

设计了一种与标准CMOS工艺完全兼容的高速光电探测器和宽带光电集成接收机,并采用0.6μm标准CMOS工艺流片. 测试结果表明,该光电集成接收机的性能已接近实用要求. 探测器的频率响应带宽为1.11GHz,光电集成接收机的3dB带宽为733MHz;在误码率为10-12条件下,对波长为850nm的输入光信号,灵敏度达到-9dBm.     

脉冲激光测距时刻鉴别方法的研究

介绍了一种用于脉冲激光测距技术的双阈值前沿时刻鉴别方法。分析了由接收信号幅度变化引起的计时误差。采用双阈值前沿时刻鉴别方法产生了飞行时间测量的停止信号和与幅度相关的时间点信号。使用高精度时间测量芯片测量了脉冲信号飞行时间和信号幅度相关的时间间隔,并对由时刻鉴别器产生的漂移误差进行了修正,获得了误差为$pm$ 3cm的测距结果。与其它时刻鉴别方法相比,该方法无需增益控制,其电路结构简单,动态范围宽,而且在脉冲幅度饱和后仍能对漂移误差进行修正。     

脉冲激光微加工技术在MEMS中的应用

介绍了脉冲激光微加工技术及其在微机电系统(MEMS)加工中的应用。脉冲激光微加工技术能够制作出三维微型结构并具有微米／亚微米加工精度，且适用于多种材料，与传统的微细加工技术(光刻、刻蚀、体硅和面硅加工技术等)相比具有其独到之处。阐述了基于激光烧蚀的脉冲激光直接微加工技术、激光-LIGA技术、激光辅助沉积与刻蚀技术以及MEMS的激光辅助操控及装配技术。     

A 1.5 Gb/s monolithically integrated optical receiver in the standard CMOS process

A monolithically integrated optical receiver, including the photodetector, has been realized in Chartered 0.35 μm EEPROM CMOS technology for 850 nm optical communication. The optical receiver consists of a differential photodetector, a differential transimpedance amplifier, three limiting amplifiers and an output circuit. The experiment results show that the receiver achieves an 875 MHz 3 dB bandwidth, and a data rate of 1.5 Gb/s is achieved at a bit-error-rate of 10~(-9). The chip dissipates 60 mW under a single 3.3 V supply.     

基于标准CMOS工艺的1.5Gb/s单片集成光接收机

A monolithically integrated optical receiver, including the photodetector, has been realized in Chartered 0.35μm EEPROM CMOS technology for 850 nm optical communication. The optical receiver consists of a differential photodetector, a differential transimpedance amplifier, three limiting amplifiers and an output circuit. The experiment results show that the receiver achieves an 875 MHz 3 dB bandwidth, and a data rate of 1.5 Gb/s is achieved at a bit-error-rate of 10-9. The chip dissipates 60 mW under a single 3.3 V supply.     

脉冲激光测距接收技术的研究

从脉冲激光测距的光电探测器人手,构建模型理论分析了漂移误差产生的原因,进一步给出了PIN管的光响应时间及其抖动大小与光照强度的近似函数关系．为稳定高效的探测反射激光脉冲信号和提高环境抗干扰能力,提出具有自动增益控制的自触发脉冲激光测距方案,不但减小脉冲信号上升沿引起的测距误差,而且也减小由于信号幅度变化带来的漂移误差影响．     

新型DVD/VCD光学头用PDIC的研制

PDIC是DVD／VCD光学头的关键部件。基于硅基工艺并采用混合集成的方法，研制出DVD和VCD兼容的、功能与国外同类商用产品相当的PDIC。着重介绍了器件设计思想、实现方法和测试结果。     

单片光电集成电路的激光微细加工装置的改进

将激光微细加工“直接写入”、“低温处理”的优势,应用于单片光电集成电路(OEIC)的制作,有利于解决其中的光电兼容问题。详细介绍了本课题组多年来在激光微细加工制作领域方面所取得的进展,完善了实验系统,包括硬件平台的搭建和改进、软件的设计,并最终形成了以计算机为核心的集光机电为一体的自动控制系统,减少了由于人为因素的影响而带来的实验误差,为激光微细加工制作出性能优越的器件创造了前提条件。同时对激光微细加工中的温度这一关键工艺参数进行了大量的理论分析和实验研究,主要包括温度的测量、温度变化规律的分析以及由此对温度参数进行控制的理论分析和研究,取得了进展,提高了激光微细加工的精度并已实际应用于InGaAs/InP平面型PIN光探测器的制作。     

面向高速应用的10位2GHz数模转换器

提出了一个刷新率达2GHz的10位电流驱动型数模转换器.在综合了精度与芯片面积等因素之后,该数模转换器使用6 4结构.采用电流型逻辑以提高转换器的速度,并采用Q2 random walk方法设计了一个双中心对称的电流矩阵,确保数模转换器的线性度.该数模转换器核心版图面积为2.2mm×2.2mm,在3.3V单电压供电的情况下,该芯片功耗为790mW.     

面向高速应用的10位2GHz数模转换器

提出了一个刷新率达2GHz的10位电流驱动型数模转换器.在综合了精度与芯片面积等因素之后,该数模转换器使用6+4结构.采用电流型逻辑以提高转换器的速度,并采用Q2 random walk方法设计了一个双中心对称的电流矩阵,确保数模转换器的线性度.该数模转换器核心版图面积为2.2mm×2.2mm,在3.3V单电压供电的情况下,该芯片功耗为790mW.     

Ultrahigh Speed and Broadband Few‐Layer MoTe2/Si 2D–3D Heterojunction‐Based Photodiodes Fabricated by Pulsed Laser Deposition

2D transition metal dichalcogenides are promising candidates for high‐performance photodetectors. However, the relatively low response speed as well as the complex transfer process hinders their wide applications. Herein, for the first time, the fabrication of a few‐layer MoTe₂/Si 2D–3D vertical heterojunction for high‐speed and broadband photodiodes by a pulsed laser deposition technique is reported. Owing to the high junction quality, ultrathin MoTe₂ film thickness, and unique vertical n–n heterojunction structure, the photodiode exhibits excellent device performance in terms of a high responsivity of 0.19 A W^?1 and a large detectivity of 6.8 × 10¹³ Jones. The device is also capable of detecting a broadband light with wavelength spanning from 300 to 1800 nm. More importantly, the device possesses an ultrahigh response speed up to 150 ns with a 3‐dB electrical bandwidth approaching 0.12 GHz. This work paves the way toward the fabrication of novel 2D–3D heterojunctions for high‐performance, ultrafast photodetectors.     

LD端面抽运Nd:YLF/Nd:YAG多波长脉冲激光器

报道了一台激光二极管(LD)双端面抽运Nd:YLF和Nd:YAG双晶体串接多波长输出脉冲激光器。在抽运能量40.5mJ,电光调Q重复频率500Hz的工作条件下,获得单脉冲能量约为6mJ的1064nm/1053nm双波长激光脉冲输出,光-光转换效率约为14.8%。相同抽运条件下在腔内插入I类相位匹配LBO晶体作为非线性频率转换器,获得了脉冲总能量为3.6mJ的526.5、529.0、532.0nm三波长同时输出,由抽运光到输出绿光脉冲的转换效率约为8.9%,测得光束质量因子分别为M2x=1.61,My2=1.25。     

一种适用于IEEE802．15．4（ZigBee）标准的2．4GHz CMOS射频收发机设计

本文提出了一种适用于IEEE 802．15．4标准的2.4GHz免认证ISM频段的全集成CMOS射频收发机．接收机采用低中频结构以降低功耗、提高灵敏度,发射机则采用直接上变频结构以降低设计复杂度和功耗．芯片采用0.18μm 1P4M CMOS工艺以及MIM电容制造,供电电压1.8V ．测试结果显示,在误包率为1％时,接收机灵敏度达到了-97dBm ,发射机输出至100Ω差分天线端口的最大输出功率为＋3dBm ．接收模式和发射模式下的电流功耗分别为17mA和19mA ,芯片面积3.3mm ×2.8mm ．     

国外军用大功率半导体激光器的发展现状

由于半导体激光器具有体积小、结构简单、质量轻、转换效率高、可靠性好、寿命长、易于调制及与其他半导体器件易于集成等特点,可应用于军事、工业、医疗、通信等领域,尤其是在激光制导跟踪、激光雷达、激光引信、激光测距、激光通信、激光模拟武器、激光瞄准告警和光纤陀螺等军事领域得到广泛应用.概述了近年来美国和欧洲等国家在半导体激光器方面的主要研制计划及其所取得的成果,重点介绍了GaAs基和InP基近红外大功率半导体激光器、中远红外及太赫兹量子级联半导体激光器等的发展现状和最新研制成果.随着新型半导体材料、激光器结构和热管理等技术的发展,展望了未来半导体激光器技术的发展趋势.     

A 6-bit, 500-MS/s current-steering DAC in SiGe BiCMOS technology and considerations for SFDR performance

This paper presents a six-bit current-steering digital-to-analogue converter (DAC), which optimises the spurious free dynamic range (SFDR) performance of high-speed binary weighted architectures by lowering current switch distortion and reducing the clock feedthrough effect. A novel current source cell is implemented that comprises heterojunction bipolar transistor current switches, negative-channel metal-oxide semiconductor (NMOS) cascode and NMOS current source to overcome distortion by specifically enhancing the SFDR for high-speed DACs. The DAC is implemented using silicon–germanium (SiGe) BiCMOS 130 nm technology and achieves a better than 21.96 dBc SFDR across the Nyquist band for a sampling rate of 500 MS/s with a core size of 0.1 mm² and dissipates just 4 mW compared to other BiCMOS DACs that achieve similar SFDR performance with higher output voltages, resulting in a much larger power dissipation.     

1.5 V Sub‐mW CMOS Interface Circuit for Capacitive Sensor Applications in Ubiquitous Sensor Networks

In this paper, a low‐power CMOS interface circuit is designed and demonstrated for capacitive sensor applications, which is implemented using a standard 0.35‐μm CMOS logic technology. To achieve low‐power performance, the low‐voltage capacitance‐to‐pulse‐width converter based on a self‐reset operation at a supply voltage of 1.5 V is designed and incorporated into a new interface circuit. Moreover, the external pulse signal for the reset operation is made unnecessary by the employment of the self‐reset operation. At a low supply voltage of 1.5 V, the new circuit requires a total power consumption of 0.47 mW with ultra‐low power dissipation of 157 μW of the interface‐circuit core. These results demonstrate that the new interface circuit with self‐reset operation successfully reduces power consumption. In addition, a prototype wireless sensor‐module with the proposed circuit is successfully implemented for practical applications. Consequently, the new CMOS interface circuit can be used for the sensor applications in ubiquitous sensor networks, where low‐power performance is essential.     

TEA／CO2脉冲激光测距机的EMI对策

介绍了新研制的ＴＥＡ／ＣＯ２脉冲激光测距机的电系统结构,重点分析了其中存在的各种ＥＭＩ源,提出了相应的对抗措施,取得了满意的效果。