Improving leakage currents of Pt/Ba0.8Sr0.2TiO3/Pt capacitors using multilayered structures

Pt/Ba_0.8Sr_0.2TiO₃ (BST)/Pt capacitors fabricated by the sol–gel process generally show abnormally high leakage currents. In this paper, we report the reduction of this leakage current in multilayered sol–gel Pt/BST/Pt thin film capacitors. The multilayered structure also provided the flexibility of adjusting the dielectric constant of the film. The thin films were fabricated by a step-by-step annealing scheme at 750 °C except that the top and bottom layers were annealed at less than 750 °C. The observed results are explained by an amorphous/polycrystalline structure, which was confirmed by scanning electron microscopy and X-ray diffraction analysis.     

Crystal structure of single phase and low sintering temperature of α-cordierite synthesized from talc and kaolin

Cordierite body with the formulation of 2.8MgO·1.5Al₂O₃·5SiO₂ was prepared from talc and kaolin as the basic raw materials. Following glass crystallization technique the glass powder was successfully heat treated at 900 °C for 2 h to form a single-phase α-cordierite. The crystal structure of α-cordierite was analysed using X-ray diffraction technique and the Rietveld structural refinement method. Differential thermal analysis (DTA), Fourier-transform infrared (FTIR), field emission scanning electron microscopy (FESEM), coefficient of thermal expansion (CTE) and dielectric properties were also performed. Results show that the materials crystallized as a hexagonal structure with space group of P6/mcc and the room temperature lattice parameters are a = 9.743742 (Å) and c = 9.389365 (Å). FTIR analysis on the glass revealed that only silicate species is the only unit that exists in the glass network. DTA also confirmed that α-cordierite completely formed after 13.5 min of isothermal heating at 900 °C. Coefficient of thermal expansion of synthesized α-cordierite is 2.5 × 10⁻⁶ °C⁻¹. The dielectric constant is between 5.0 and 5.5 for 1 MHz and 1.8 GHz, respectively, and the dielectric loss is in the range 10⁻². FESEM micrographs revealed that the material is fully densified.     

Effects of oxygen pressure on electrical properties of (Na0.5K0.5)NbO3 films grown on Pt/Ti/SiO2/Si substrates

(Na_0.5K_0.5)NbO₃ (NKN) films were annealed under various oxygen partial pressures (OPPs), and the effect of the OPP on the electrical properties of the NKN films was investigated. The dielectric and piezoelectric constants of the NKN film were not influenced by the OPP. However, the remnant polarization and coercive field decreased when the OPP exceeded 25.0 torr because of the low breakdown field and high leakage current. The NKN film annealed under air atmosphere exhibited a high leakage current density that decreased with increasing OPP because of the decreased number of oxygen vacancies. The minimum leakage current density of 3.7 × 10^?8 A cm^?2 at 0.3 MV cm^?1 was obtained for the NKN film annealed under an OPP of 25.0 torr. The leakage current increased when the OPP exceeded 25.0 torr because of the formation of oxygen interstitial ions. The leakage current of the Pt/NKN/Pt device was explained by Schottky emission. The obtained Schottky barrier height between the Pt electrode and NKN film was ～1.24 eV.     

Synthesis and characterization of Al2O3-Ce0.5Zr0.5O2 powders prepared by chemical coprecipitation method

Al₂O₃-Ce_0.5Zr_0.5O₂ catalytic powders were synthesized by the coprecipitation (ACZ-C) and mechanical mixing (ACZ-M) methods, respectively. As-synthesized powders were characterized by XRD, Raman spectroscopy, surface area and thermogravimetric analyses. It was found that the mixing extent of Al³⁺ ions affected the phase development, texture and oxygen storage capacity (OSC) of the Ce_0.5Zr_0.5O₂ powder. Single phase of ACZ-C could be maintained without phase separation and inhibit α-Al₂O₃ formation up to 1200 °C. The specific surface area value of ACZ-C (81.5 m²/g) was larger than that of ACZ-M (62.1 m²/g) and Ce_0.5Zr_0.5O₂ (17.1 m²/g) powders, which were calcined at 1000 °C. In comparison with ACZ-C and Al₂O₃, which were calcined at high temperature (900–1200 °C), it was found that the degradation rate of specific surface area of ACZ-C was lower than that of Al₂O₃. ACZ-C sample showed a higher thermal stability to resist phase separation and crystallite growth, which enhanced the oxygen storage capacity property for Ce_0.5Zr_0.5O₂ powders.     

Trapping and Detrapping Effects on Current Conduction Mechanisms at Interface of Au/HfO2 High-k Films

主要研究了经不同温度退火后 HfO2 高k栅介质薄膜的电流电压特性,结果表明,在栅极入射下,漏电流与 Au/HfO2 界面处的陷阱密度密切相关,在高电场下,Au/HfO2/p-Si 结构的主要导电机制为 Schottky发射和 Poole-Frenkel 发射。研究了电压应力对栅介质薄膜稳定性的影响,由于局部导电通道的形成,经时电介质击穿(TDDB)现象被观察到     

Effect of quenching on magnetostriction and microstructure of melt-spun Fe83Ga17 alloy

The effect of quenching on magnetostriction and microstructure of melt-spun Fe₈₃Ga₁₇ ribbons was investigated. The results show that magnetostriction of ribbons is greatly improved by heat treatment and the value of λ of ribbons reached nearly −2300 ppm after annealed at 700 °C for 3 h. The XRD analyses reveal that the microstructure of melt-spun Fe₈₃Ga₁₇ alloy ribbons was changed after heat treatment and the transition of A2 + DO₃ → A2 + DO₃ + DO₁₉ occurred at 700 °C for the ribbons. The magnetostriction of Fe₈₃Ga₁₇ ribbons is influenced by the emergence of DO₁₉ structure and the increase of ordered degree, and the variation of crystallinity of A2 phase is also related to the magnetostriction of Fe₈₃Ga₁₇ ribbons.     

The effects of hydroxyl-free polystyrene buffer layer on electrical performance of pentacene-based thin-film transistors with high-k oxide gate dielectric

We have investigated the effects of hydroxyl-free polystyrene (PS) as buffer layer on pentacene-based low-voltage organic thin-film transistors (OTFTs). The PS buffer layer is formed on the HfO₂ layer evaporated on Si substrate by spin-coating method prior to pentacene deposition, existence of which results in a dramatic increase of field effect mobility from 0.09 to 0.59 cm²/Vs and negligible hysteresis. The improved mobility and hysteresis of the OTFTs can be attributed to the formation of smooth and nonpolar hydroxyl-free PS/HfO₂ gate dielectric surface. The PS insulator buffer layer can also effectively reduce gate leakage current by more than 70%. The results demonstrate that using appropriate polymer buffer layer is favorable to improve the performance of the OTFTs operating at low voltages with high mobility and good electrical stability.     

Dielectric properties of Ta<Subscript>2</Subscript>O<Subscript>5</Subscript> thin films deposited onto Ti and TiO<Subscript>2</Subscript> layer

The present study describes the dielectric properties of RF sputtered Ta₂O₅ thin films as a function of the buffer layer and annealing condition. The buffer layers were Ti or TiO₂. And the thin film was annealed in various conditions. The X-ray pattern results showed that the phase of the RF sputtered Ta₂O₅ thin films was amorphous and this state was kept stable to RTA (rapid thermal annealing) even at 700°C. Measurements of the electrical and dielectric properties of the reactive sputtered Ta₂O₅ fabricated in two simple metal insulator semiconductor (MIS) structures, (Cu/Ta₂O₅/Ti/Si/Cu and Cu/Ta₂O₅/TiO₂/Si/Cu) indicated that the amorphous Ta₂O₅ grown on Ti possesses a high dielectric constant (30–70) and high leakage current (10⁻¹–10⁻⁴ A/cm²), whereas a relatively low dielectric constant (−10) and low leakage current (−10⁻¹⁰ A/cm²) were observed in the amorphous Ta₂O₅ deposited on the TiO₂ buffer layer. In addition, the leakage current mechanisms of the two amorphous Ta₂O₅ thin films were investigated by plotting the relation of current density (J) vs. applied electric field (E). The Ta₂O₅/Ti film exhibited three dominant conduction mechanism regimes contributed by the Ohmic emission at low electrical field, by the Schottky emission at intermediate field and by the Poole-Frenkel emission at high field. In the case of Ta₂O₅/TiO₂ film, the two conduction mechanisms, the Ohmic and Schottky emissions, governed the leakage current density behavior. The conduction mechanisms at various electric fields applied were related to the diffusion of Ta, Ti and O, followed by the creation of vacancies, in the rapid thermal treated capacitors.     

Thermo-physical and thermal cycling properties of plasma-sprayed BaLa2Ti3O10 coating as potential thermal barrier materials

Increased turbine inlet temperature in advanced turbines has promoted the development of thermal barrier coating (TBC) materials with high-temperature capability. In this paper, BaLa₂Ti₃O₁₀ (BLT) was produced by solid-state reaction of BaCO₃, TiO₂ and La₂O₃ at 1500 °C for 48 h. BLT showed phase stability between room temperature and 1400 °C. BLT revealed a linearly increasing thermal expansion coefficient with increasing temperature up to 1200 °C and the coefficients of thermal expansion (CTEs) are in the range of 1 × 10^− 5–12.5 × 10^− 6 K^− 1, which are comparable to those of 7YSZ. BLT coatings with stoichiometric composition were produced by atmospheric plasma spraying. The coating contained segmentation cracks and had a porosity of around 13%. The microhardness for the BLT coating is 3.9–4.5 GPa. The thermo-physical properties of the sprayed coating were investigated. The thermal conductivity at 1200 °C is about 0.7 W/mK, exhibiting a very promising potential in improving the thermal insulation property of TBC. Thermal cycling result showed that the BLT TBC had a lifetime of more than 1100 cycles of about 200 h at 1100 °C. The failure of the coating occurred by cracking at the thermally grown oxide (TGO) layer due to severe oxidation of bond coat. Based on the above merits, BLT could be considered as a promising material for TBC applications.     

Improved high-Q microwave dielectric resonator using ZnO-doped La(Co1/2Ti1/2)O3 ceramics

The microwave dielectric properties and the microstructures of ZnO-doped La(Co_1/2Ti_1/2)O₃ ceramics prepared by conventional solid-state route have been studied. Doped with ZnO (up to 0.75 wt%) can effectively promote the densification of La(Co_1/2Ti_1/2)O₃ ceramics with low sintering temperature. At 1320 °C, La(Co_1/2Ti_1/2)O₃ ceramics with 0.75 wt% ZnO addition possesses a dielectric constant (_r) of 30.2, a Q × f value of 73,000 GHz (at 8 GHz) and a temperature coefficient of resonant frequency (τ_f) of −35 ppm/°C.     

Plasma electrolytic oxidation of hafnium

This paper presents the results of the investigation of plasma electrolytic oxidation (PEO) of hafnium. Atoms ionized during the PEO micro-discharging were identified using optical emission spectroscopy. The spectral line shape analysis of the hydrogen Balmer line H_β indicated the presence of two types of micro-discharges characterized by electron number densities of around 2.5·10²¹ m^− 3 and 1.3·10²² m^− 3. Scanning electron microscopy and X-ray diffraction were employed to investigate surface morphology and phase composition of the PEO coatings obtained. The coatings were crystalline and composed of monoclinic HfO₂. Diffuse reflectance spectroscopy has shown that HfO₂ coatings have a broad absorption band in the range from 200 nm to 400 nm. Optical band gap of HfO₂ coatings was around 5.4 eV, as estimated from absorption spectra. Photoluminescence measurements show that HfO₂ coatings have broad emission band in the visible region, with a maximum at around 480 nm. The highest photoluminescence was obtained for the excitation wavelength of 270 nm. Intensity of photoluminescence increased with PEO time and is related to an increase of oxygen vacancy defects in HfO₂ coatings formed during the process.     

The influence of sintering conditions on the dielectric and piezoelectric properties of PbZrTiO–PbMgNbO ceramic tubes

Piezoelectric tube actuators with a composition of 0.9Pb(Zr_0.52Ti_0.48)O₃–0.1Pb(Mg_1/3Nb_2/3)O₃ (0.9PZT–0.1PMN) have been prepared using electrophoretic deposition (EPD) method. The effect of sintering temperature on the phase formation, densification, microstructure, dielectric and piezoelectric properties of the 0.9PZT–0.1PMN system was investigated. The results show that when the sintering temperature varies from 1150 to 1300 °C, the tubes exhibit single perovskite structure with coexistence of rhombohedral and tetragonal phase. The P–E hysteresis loops reveal the ferroelectric nature of 0.9PZT–0.1PMN system. The tip deflection of the tube upon the applied voltage shows typical butterfly loop, which is a feature of piezoelectric systems. It was found that both dielectric and piezoelectric constants increase with increasing sintering temperature up to 1250 °C. When exceeding 1250 °C, the evaporation of PbO degrades the dielectric and piezoelectric properties of the PZT–PMN. The sample packing technique during sintering is also critically important for obtaining good properties.     

Investigation of the microwave dielectric properties of Ca1−xMgxLa4Ti5O17 ceramics for application in coplanar patch antenna

In this paper, the dielectric properties of Ca_1−xMg_xLa₄Ti₅O₁₇ ceramics at microwave frequency have been studied. The diffraction peaks of Ca_(1−x)Mg_xLa₄Ti₅O₁₇ ceramics nearly unchanged with x increasing from 0 to 0.03. Similar X-ray diffraction peaks of Ca_0.99Mg_0.01La₄Ti₅O₁₇ ceramic were observed at different sintering temperatures. A maximum density of 5.3 g/cm³ can be obtained for Ca_0.99Mg_0.01La₄Ti₅O₁₇ ceramic sintered at 1500 °C for 4 h. A maximum dielectric constant (_r) and quality factor (Q × f) of Ca_0.99Mg_0.01La₄Ti₅O₁₇ ceramic sintered at 1500 °C for 4 h are 56.3 and 12,300 GHz (at 6.4 GHz), respectively. A near-zero temperature coefficient of resonant frequency (τ_f) of −9.6 ppm/°C can be obtained for Ca_0.99Mg_0.01La₄Ti₅O₁₇ ceramic sintered at 1500 °C for 4 h. The measurement results for the aperture-coupled coplanar patch antenna at 2.5 GHz are presented. With this technique, a 3.33% bandwidth (return loss <−10 dB) with a center frequency at approximately 2.5 GHz has been successfully achieved.     

Effect of CrB2 addition on densification, properties and oxidation resistance of TiB2

This paper presents the results of detailed studies carried out on the densification of TiB₂ with CrB₂ as sinter additive by hot pressing. The dense compacts were characterized by measurement of hardness, indentation fracture toughness, flexural strength, coefficient of thermal expansion and electrical resistivity. Oxidation characteristics were investigated between 600 °C and 1000 °C and isothermal oxidation kinetics at 850 °C. Phase identification and surface morphology analysis of hot pressed and oxidized samples were done using XRD and SEM. A high density of 96.61% Τ.D was obtained with the addition of 2.5% CrB₂ by hot pressing at 1750 °C under 35 MPa pressure. Hardness values of composites with 2.5–10% CrB₂ were close to 24 GPa and fracture toughness in the range of 3–5 MPa m^1/2. Coefficient of thermal expansion of the composite with 10% CrB₂ was measured in the range of 6.21–7.43 × 10⁻⁶/K from room temperature to 1000 °C. Electrical resistivity of TiB₂ + 10%CrB₂ was measured as 32.83, 75.97 and 120 μΩ cm at 25 °C, 500 °C and 900 °C, respectively. Observed nature of oxidation was parabolic for all composites. Formation of continuous and thick glassy film was observed with increased CrB₂ content in the composite. TiO₂ and CrBO₃ phases were identified on the oxidized surface which are responsible for the improved oxidation resistance of this composite.     

Preparation and characteristic of spherical Li3V2(PO4)3

Spherical Li₃V₂(PO₄)₃ was synthesized by using N₂H₄ as reducer. The products were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results show that single-phase, spherical and well-dispersed Li₃V₂(PO₄)₃ has been successfully synthesized in our experimental process. Electrochemical behaviors have been characterized by charge/discharge measurements. The initial discharge capacities of Li₃V₂(PO₄)₃ were 123 mAh g⁻¹ in the voltage range of 3.0–4.3 V and 132 mAh g⁻¹ in the voltage range of 3.0–4.8 V.     

Conductivity of a new pyrophosphate Sn0.9Sc0.1(P2O7)1−δ prepared by an aqueous solution method

New pyrophosphate Sn_0.9Sc_0.1(P₂O₇)_1−δ was prepared by an aqueous solution method. The structure and conductivity of Sn_0.9Sc_0.1(P₂O₇)_1−δ have been investigated. XRD analysis indicates that Sn_0.9Sc_0.1(P₂O₇)_1−δ exhibits a 3 × 3 × 3 super structure. It was found that Sn_0.9Sc_0.1(P₂O₇)_1−δ prepared by an aqueous method is not conductive. The total conductivity of Sn_0.9Sc_0.1(P₂O₇)_1−δ in open air is 2.35 × 10⁻⁶ and 2.82 × 10⁻⁹ S/cm at 900 and 400 °C respectively. In wet air, the total conductivity is about two orders of magnitude higher (8.1 × 10⁻⁷ S/cm at 400 °C) than in open air indicating some proton conduction. SnP₂O₇ and Sn_0.92In_0.08(P₂O₇)_1−δ prepared by an acidic method were reported fairly conductive but prepared by similar solution methods are not conductive. Therefore, the conductivity of SnP₂O₇-based materials might be related to the synthetic history. The possible conduction mechanism of SnP₂O₇-based materials has been discussed in detail.     

Densification, microstructural evolution, and dielectric properties of hexagonal Ba(Ti1−xMnx)O3 ceramics sintered with fluxes

Recently, doped hexagonal BaTiO₃ (6h-BaTiO₃) ceramics have been reported as potential candidates used in microwave dielectric resonators. However, similar to other common microwave ceramics, doped 6h-BaTiO₃ ceramics require a high sintering temperature, greater than 1300 °C. In this study, the effect of sintering aids, including Bi₂O₃, B₂O₃, BaSiO₃, Li₂CO₃, CuO, V₂O₅, 5ZnO·2B₂O₃, and 5ZnO·2SiO₂, on the densification, microstructural evolution, and microwave properties of the 6h-Ba(Ti_0.85Mn_0.15)O₃ ceramics was examined. Results indicate that among the fluxes studied, Bi₂O₃, B₂O₃, and Li₂CO₃ could effectively reduce the sintering temperature of 6h-Ba(Ti_0.85Mn_0.15)O₃ ceramics through liquid phase sintering, while retaining the hexagonal structure and the microwave dielectric properties. The best results were obtained for the 6h-Ba(Ti_0.85Mn_0.15)O₃ with the additions of 5 wt% Bi₂O₃ sintered at 900 °C (_r: 54.7, Qf_r: 1323, and τ_f:183.3 ppm/°C), 10 wt% B₂O₃ sintered at 1100 °C (_r: 54.4, Qf_r: 3448, and τ_f: 254.5 ppm/°C), and 5 wt% Li₂CO₃ sintered at 950 °C (_r: 43.7, Qf_r: 2501, and τ_f: −29.8 ppm/°C).     

Investigation on synthesis, pressureless sintering and hot pressing of chromium diboride

Experimental investigations were carried out on synthesis of chromium diboride through boron carbide reduction of Cr₂O₃. The products obtained were characterized by X-ray diffraction and the process optimized to prepare single-phase CrB₂ powder. Densification of CrB₂ was investigated by pressureless sintering and hot pressing. A maximum of 93% ρ_th was obtained by pressureless sintering at 1850 °C after a prolonged duration of 360 min. However, near theoretical density was achieved by hot pressing at 1600 °C and 35 MPa pressure for 2 h. The hardness and fracture toughness of fully dense CrB₂ was measured as 22 GPa and 3.5 MPa m^1/2, respectively. The mode of fracture in pressureless sintered samples is intergranular whereas that in hot pressed is transgranular.     

Structure and optical properties of nanocrystalline NiO thin film synthesized by sol–gel spin-coating method

NiO thin film was prepared by sol–gel spin-coating method. This thin film annealed at T = 600 °C. The structure of NiO thin film was investigated by means of X-ray diffraction (XRD) technique and scanning electron microscopy (SEM). The optical properties of the deposited film were characterized from the analysis of the experimentally recorded transmittance and reflectance data in the spectral wavelength range of 300–800 nm. The values of some important parameters of the studied films are determined, such as refractive index (n), extinction coefficient (k), optical absorption coefficient (α) and band energy gap (E_g). According to the analysis of dispersion curves, it has been found that the dispersion data obeyed the single oscillator of the Wemple–DiDomenico model, from which the dispersion parameters and high-frequency dielectric constant were determined. In such work, from the transmission spectra, the dielectric constant (_∞), the third-order optical nonlinear susceptibility χ⁽³⁾, volume energy loss function (VELF) and surface energy loss function (SELF) were determined.     

Growth of Mn, Co and Ni-doped near-stoichiometric LiNbO3 by Bridgman method using K2O flux

The near-stoichiometric LiNbO₃ (SLN) single crystals doped Mn²⁺, Co²⁺ and Ni²⁺ in 0.5 mol% concentration in the raw compositions were grown by the Bridgman method under the conditions of taking K₂O as flux, a high temperature gradient (90–100 °C/cm) for solid–liquid interface. The XRD, absorption spectra, excitation spectra and emission spectra have been carried out. From the absorption edges of Mn²⁺, Co²⁺ and Ni²⁺-doped SLN crystals, the molar ratio of [Li⁺]/[Nb⁵⁺] are estimated to be about 0.977. The absorption spectra of Mn²⁺:SLN have shown a broad absorption band centered at 571 nm (⁶A_1g(⁶S) → ⁴T_1g(⁴G)), three absorption peaks at 520, 549 and 612 nm (overlapping of the ⁴T₁(F)–⁴A₂(F), ⁴T₁(F)–⁴T₁(P)), and a wide absorption band at 1400 nm (⁴T₁(F) → ⁴T₂(F)) of Co²⁺:SLN, Ni²⁺:SLN, and five absorption peaks at 381 nm (³A_2g(F) → ³T_1g(P)), 733 nm (³A_2g(F) → ³T_1g(F)), 1280 nm (³A_2g(F) → ³T_2g(F)), 430 nm (³A_2g(F) → ¹T_2g(D)), and 840 nm (³A_2g(F) → ¹E(D)) of Ni²⁺:SLN were observed. A red emission at 612 nm (⁴T_1g(⁴G) → ⁶A_1g(⁶S)) for Mn²⁺:SLN, a red emission at 775 nm (⁴T₁(P) → ⁴T₁(F)) for Co²⁺:SLN, and a green emission at 577 nm (¹T_2g(D) → ³A_2g(F)) and a red emission at 820 nm (¹T_2g(D) → ³T_2g(F)) for Ni²⁺:SLN were observed under excited by 416, 520 and 550 nm lights, respectively. The concentration distribution of Mn²⁺, Co²⁺and Ni²⁺ ion in SLN crystals was investigated primarily from the absorption and emission spectra for various parts. The effective distribution coefficient for Mn²⁺ was less than 1. While, for Co²⁺ and Ni²⁺ were more than 1.