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1.
Samaria-doped ceria (SDC, Ce0.8Sm0.2O1.9) ceramic powders of submicrometer size were synthesized by a sol–gel auto-combustion method. From these powders microtubes with a dual structure comprising of a dense layer and a porous substrate layer were fabricated in a single step through a phase inversion/sintering technique. A sintering temperature in excess of 1450°C is required for SDC to achieve gastight microtubes. The mechanical strength of the SDC microtubes increases with increasing sintering temperature and may attain up to 208 MPa when sintered at 1500°C. Electrical impedance spectroscopy studies indicate that the SDC microtubes have electrical conductivities of 4.46 × 10−4–0.072 S/cm and corresponding activation energy of 81.9 kJ/mol at temperatures between 400° and 800°C. Full fuel cells were fabricated by coating Ba0.5Sr0.5Co0.8Fe0.2O3−δ (BSCF) on to the inner surface and a Ni-SDC cermet on to the outer surface of the gastight microtubes to act as the cathode and the anode, respectively. The resultant BSCF|SDC|Ni-SDC microcells have a stable output maximum of 106 mW/cm2 at 750°C when hydrogen and air were used as fuel and oxidant gas, respectively.  相似文献   

2.
Nanostructured samaria- and gadolinia-doped ceria (SDC and GDC) powders were synthesized at low temperature (400°C) using diamine-assisted direct coprecipitation method. Fast-firing (f.f.) processes, where sintering temperatures are reached in a short time to promote lattice diffusion, were compared with conventional sintering, for the formation of dense microstructures from the nanostructured powders. Highly dense SDC and GDC samples (96%) with reduced grain size (150 nm) were obtained by f.f. even at 1300°–1400°C and, unexpectedly, high electrical conductivity and low blocking effect at grain boundary was obtained. Conventionally sintered samples showed that the grain boundary resistivity decreased with increasing the grain size, in agreement with the increase in geometrical bulk volume/grain boundary area ratio. Conversely, f.f. samples showed grain boundary resistivity smaller for small grain size. The above effect was observed only for high dopant (>10% molar) contents. The combined effect of powder grain size, dopant content, and sintering temperature–time profile, can be exploited to tune ceria microstructures for specific ionic device applications.  相似文献   

3.
Dense 8 mol% CuO-doped 3Y-TZP ceramics were prepared by pressureless sintering for 8 h at 1500° and 1550°C, respectively. Transmission electron spectroscopy revealed that the ceramic sintered at 1500°C exhibits grain boundaries free of any amorphous phase, while crystalline copper-oxide grains were found in the zirconia matrix, whereas the sample sintered at 1550°C contains a Cu-rich amorphous grain boundary layer. The tribological behavior of these materials was tested under dry-sliding conditions using a pin-on-disk tribometer. The material sintered at 1500°C showed self-lubrication resulting in a low coefficient of friction ( f ) of 0.2–0.3 and a low specific wear rate ( k ) ≪ 10−6 mm3·(N·m)−1. In contrast, the material sintered at 1550°C showed poor tribological behavior ( f =0.8–0.9; k ≫ 10−6 mm3·(N·m)−1 under the same conditions. The difference in the tribological behavior of these two materials was interpreted on the basis of mechanical properties and microstructural characteristics.  相似文献   

4.
The stability of an yttria-stabilized zirconia and samaria-doped ceria (YSZ–SDC) nanocrystalline heterophase system was studied with in situ high-temperature X-ray diffraction during a simulated sintering program. Formation of YSZ–SDC solid solution in the nanocrystalline system was found to start at a low temperature between 900° and 950°C. The analysis of lattice parameters as a function of temperature suggested that YSZ and SDC species diffused mutually during the formation of solid solution. The electrical conductivity of the YSZ–SDC solid solution was significantly lower than that of the YSZ and SDC.  相似文献   

5.
The simultaneous addition of 0.5 wt% Cr and Fe was found to enhance the densification of TiB2. The densities of specimens that were sintered for 2 h at 1800° and 1900°C were 97.6% and 98.8% of the theoretical value, respectively. The mechanical properties of the specimen sintered at 1800°C, which had a strength of 506 MPa and a fracture toughness of 6.16 MPa·m1/2, were much better than those observed in the specimen sintered at 1900°C.  相似文献   

6.
Gas-tight Y2O3-stabilized ZrO2 (YSZ) films were prepared on NiO–YSZ and NiO–SDC (Sm0.2Ce0.8O1.9) anode substrates by a novel method. A cell, Ni–YSZ/YSZ(10 μm)/LSM–YSZ, was tested with humidified hydrogen as fuel and ambient air as oxidant. The maximum power densities of 1.64, 1.40, 1.06, and 0.60 W/cm2 were obtained at 850°, 800°, 750°, and 700°C, respectively. With methane as fuel, a cell of Ni–SDC/YSZ (12 μm)/LSM–YSZ exhibited the maximum power densities of 1.14, 0.82, 0.49, and 0.28 W/cm2 at 850°, 800°, 750°, and 700°C, respectively. The impedance results showed that the performance of the cell was controlled by the electrode polarization rather than the resistance of YSZ electrolyte film.  相似文献   

7.
This study investigates the effect of CuO on the sintering behavior, dielectric properties, and microstructures of Ba0.6Sr0.4TiO3 (BST) ceramics. The ceramics were sintered in air at temperatures ranging from 1000° to 1230°C. It is found that a small amount of added CuO (0.6 mol%) can significantly increase the density and improve the dielectric properties of BST ceramics. Doped BST ceramics can be sintered to a density >95% of the theoretical density at 1150°C. scanning electron microscopic observations show that the BST grain sizes increase with increasing amounts of CuO. No secondary phases in the BST ceramics are observed using X-ray diffraction pattern for CuO additions up to 0.9 mol%. However, compositional analysis using transmission electron microscopy-EDX for the BST ceramics with 0.9 mol% CuO sintered at 1150°C showed that a small level of secondary phase formation is present. On the other hand, large dislocations are observed for BST with 0.6 mol% CuO addition as a result of lattice distortion, which creates the vacancy condensation because of the atomic mismatch in the solid solutions. Optimal CuO doping concentrations can reduce the loss tangents of BST that can also ensure a high dielectric constant. When the doping concentration of CuO is 0.6 mol% and the ceramic is sintered at 1150°C, the BST ceramic has the following properties at 1 MHz: dielectric constant=4094, tan δ=0.55%.  相似文献   

8.
We have prepared dense polycrystalline gadolinium gallium garnet (GGG) by solid-state reaction of the oxides. The oxides were prereacted at 1350°C, ground, pressed, and sintered at 1650°C, yielding 97% dense samples. Ga2O3 evaporated from the sample surface leaving Gd4Ga2O9 that could spall off the sample. For the short times needed to sinter samples, the bulk composition of the material remained essentially constant. The microhardness of the GGG was 11.8 ± 1.2 GN · m−2.  相似文献   

9.
The substitution of between 0 and 1.6 wt% silicon (Si-HA) in hydroxyapatite (HA) inhibited densification at low temperatures (1000°–1150°C), with these effects being more significant as the level of silicon substitution was increased. For higher sintering temperatures (1200°–1300°C), the sintered densities of HA and Si-HA compositions were comparable. Examination of the ceramic microstructures by scanning electron microscopy (SEM) showed that silicon substitution also inhibited grain growth at higher sintering temperatures (1200°–1300°C). The negative effect of silicon substitution on the sintering of HA at low temperatures (1000°–1150°C) was reflected in the hardness values of the ceramics. However, for higher sintering temperatures, e.g., 1300°C, where sintered densities were comparable, the hardness values of Si-HA compositions were equal to or greater than that of HA, reflecting the smaller grain sizes observed for the former.  相似文献   

10.
Conventional sintering of (Na1− x K x )0.5Bi0.5TiO3 (abbreviated as NKBT x , x =18–22 mol%) lead-free piezoelectric ceramics was investigated to clarify the optimal sintering temperature for densification and electrical properties. Both sintered density and electrical properties were sensitive to sintering temperature; particularly, the piezoelectric properties deteriorated when the ceramics were sintered above the optimum temperature. The NKBT20 and NKBT22 ceramics synthesized at 1110°–1170°C showed a phase transition from tetragonal to rhombohedral symmetry, which was similar to the morphotropic phase boundary (MPB). Because of such MPB-like behavior, the highest piezoelectric constant ( d 33) of about 192 pC/N with a high electromechanical coupling factor ( k p) of about 32% were obtained in the NKBT22 ceramics sintered at 1150°C.  相似文献   

11.
The room-temperature freeze-casting method was used to fabricate porous bioactive glass–ceramics. In this method, a glass/camphene slurry prepared at 60°C was cast into a mold at 20°C, resulting in the production of a rigid green body that was comprised of three-dimensional dendritic camphene networks surrounded by highly concentrated glass powder walls. After the sublimation of camphene, the samples were sintered for 3 h at elevated temperatures ranging from 700° to 1100°C. As the sintering temperature was increased to 1000°C, the densification of the glass–ceramic wall was remarkably enhanced, while its highly porous structure was preserved. The sample sintered at 1000°C showed a high porosity of 53% and pore channels with a size of several tens of micrometers, as well as dense glass–ceramic walls. In addition, the fabricated samples effectively induced the deposition of apatite on their surfaces when immersed in simulated body fluid, implying that they are very bioactive.  相似文献   

12.
A series of alumina-based ceramic cores sintered at 1300°C, 1400°C, and 1500°C for 5 h were prepared, and the phases and microstructures were characterized by X-ray diffraction and scanning electron microscopy. The effect of colloidal silica sols on the properties of ceramic core was discussed. The properties of these materials were determined. The results indicated that the microstructure of the core is characterized by the presence of substantially unreacted Al2O3 particles having a polycrystalline composition consisting essentially of in situ synthesized 3Al2O3·2SiO2 on the surface of the Al2O3 particles. The colloidal silica sol contents do not have an appreciable effect on the densification and shrinkage of the alumina ceramic core. The ceramic cores of 5 wt% colloidal silica sol contents sintered at 1500°C for 5 h showed the smallest creep deformation in the present research.  相似文献   

13.
The microstructure, thermal expansion, mechanical property, and ionic conductivity of samaria-doped ceria (SDC) prepared by coprecipitation were investigated in this paper. The results revealed that the average particle size ranged from 10.9±0.4 to 13.5±0.5 nm, crystallite dimension varied from 8.6±0.3 to 10.7±0.4 nm, and the specific surface area distribution ranged from 62.6±1.8 to 76.7±2.2 m2/g for SDC powders prepared by coprecipitation. The dependence of lattice parameter, a, versus dopant concentration, x , of Sm3+ ion shows that these solid solutions obey Vegard's rule as a ( x )=5.4089+0.10743 x for Ce1− x Sm x O2−1/2 x . For SDC ceramics sintered at 1500°C for 5 h, the bulk density was over 95% of the theoretical density; the maximum ionic conductivity, σ800°C=(22.3±1.14) × 10−3 S/cm with minimum activation energy, E a=0.89±0.02 eV, was found in the Ce0.80Sm0.20O1.90 ceramic. A dense Ce0.8Sm0.2O1.9 ceramic with a grain size distribution of 0.5–4 μm can be obtained by controlling the soaking time at 1500°C. When the soaking time was increased, the microhardness of Ce0.8Sm0.2O1.9 ceramic increased, the toughness slightly decreased, which was related to grain growth with the soaking time.  相似文献   

14.
Ca(Zn1/3Nb2/3)O3 microwave dielectric ceramics were prepared using a solid-state reaction process, and their microwave dielectric properties were evaluated as functions of sintering and postdensification annealing conditions. The relationship between microwave dielectric properties and processing was interpreted through the variation of microstructures. The dielectric constant showed slight variation with sintering and annealing conditions, but the Q × f value increased at first and then decreased with increased sintering temperature, and annealing in oxygen indicated significant improvement in Q × f , especially for the specimens sintered at higher temperatures. The good microwave dielectric properties were obtained in the ceramics sintered at 1225°C in air for 3 h and annealed at 1100°C in oxygen for 8 h: ɛ= 34.1, Q × f = 15 890 GHz, τf=−48 ppm/°C.  相似文献   

15.
The effect of glass addition on the properties of BaO–TiO2-WO3 microwave dielectric material N-35, which has Q = 5900 and K = 35 at 7.2 GHz for samples sintered at 1360°C, was investigated. Several glasses including B2O3, SiO2, 5ZnO–2B2O3, and nine other commercial glasses were selected for this study. Among these glasses, one with a 5 wt% addition of B2O3 to N-35, when sintered at 1200°C, had the best dielectric properties: Q = 8300 and K = 34 at 8.5 GHz. Both Q and K increased with firing temperature as well as with density. The Q of N-35, when sintered with a ZnO–B2O3 glass system, showed a sudden drop in the sintering temperature to about 1000°C. The results of XRD, thermal analysis, and scanning electron microscopy indicated that the chemical reaction between the dielectric ceramics and glass had a greater effect on Q than on the density. The effects of the glass content and the mixing process on the densification and microwave dielectric properties are also presented. Ball milling improved the densification and dielectric properties of the N-35 sintered with ZnO–B2O3.  相似文献   

16.
We evaluated the microstructure, superconducting, and flux pinning properties of La-doped (Bi,Pb)-2212 bulk sample by varying its sintering temperature ( T sinter) between 846° and 860°C. Significant variations in microstructure, self- and in-field J Cs at 64 K and flux pinning properties have been observed for La-substituted samples with respect to T sinter. The sample sintered at 858°C shows best self-field J C while that sintered at 846°C shows the best in-field J C due to the changes in microstructure. The activation energy of flux motion (pinning potential U o) is estimated from the field dependent resistivity–temperature curves, and the flux pinning force ( F P) from the field-dependent J C values. It is found that the La-doped samples, sintered at 846°C show maximum F P and U o of 463 kN/m3 and 0.380±0.001 eV as against 93.6 k/Nm3 and 0.140±0.001 eV, respectively, for the sample sintered at 858°C. The undoped (Bi,Pb)-2212 shows a maximum F P and U o of 12.7 k/Nm3 and 0.074±0.001 eV, respectively. The origin of these enhanced properties is mainly from the normal-like defects introduced by optimum La-doping at the Sr-site, at an optimum sintering temperature.  相似文献   

17.
The electrical properties of two single-phase, lanthanum-doped BaTiO3 compositions, x = 0.03 and x = 0.20, in Ba1– x La x Ti1– x /4O3 were investigated by impedance spectroscopy after heat treatment in oxygen, argon, and air at 1350°C. Samples heated in oxygen were electrically insulating, whereas those heated in argon lost oxygen and were semiconducting at room temperature, irrespective of x . Samples heated in air showed intermediate electrical properties and also were electrically inhomogeneous; the two compositions showed different electrical behaviors, and a model for each, based on oxygen nonstoichiometry within the ceramics, is proposed. Oxygen deficiency in samples sintered in air was avoided by heating at 1200°C, instead of 1350°C. Alternatively, oxygen lost from ceramics heated in air at 1350°C was regained by postannealing in oxygen at 1350°C.  相似文献   

18.
MgSiO3 ceramics were synthesized and their microwave dielectric properties were investigated. The Mg2SiO4 phase was formed at temperatures lower than 1200°C, while the orthorhombic MgSiO3 phase started to form by the reaction of SiO2 and Mg2SiO4 in the specimen fired at 1200°C. The structure of the MgSiO3 ceramics was transformed from orthorhombic to monoclinic when the sintering temperature exceeded 1400°C. A dense microstructure was developed for the specimens sintered at above 1350°C. The excellent microwave dielectric properties of ɛr=6.7, Q × f =121 200 GHz, and τf=−17 ppm/°C were obtained from the MgSiO3 ceramics sintered at 1380°C for 13 h.  相似文献   

19.
Development of a low-temperature sintered dielectric material derived from Li2MgSiO4 (LMS) for low-temperature cofired ceramic (LTCC) application is discussed in this paper. The LMS ceramics were prepared by the solid-state ceramic route. The calcination and sintering temperatures of LMS were optimized at 850°C/4 h and 1250°C/2 h, respectively, for the best density and dielectric properties. The crystal structure and microstructure of the ceramic were studied by the X-ray diffraction and scanning electron microscopic methods. The microwave dielectric properties of the ceramic were measured by the cavity perturbation method. The LMS sintered at 1250°C/2 h had ɛr=5.1 and tan δ=5.2 × 10−4 at 8 GHz. The sintering temperature of LMS is lowered from 1250°C/2 h to 850°C/2 h by the addition of both lithium borosilicate (LBS) and lithium magnesium zinc borosilicate (LMZBS) glasses. LMS mixed with 1 wt% LBS sintered at 925°C/2 h had ɛr=5.5 and tan δ=7 × 10−5 at 8 GHz. Two weight percent LMZBS mixed with LMS sintered at 875°C/2 h had ɛr=5.9 and tan δ=6.7 × 10−5 at 8 GHz.  相似文献   

20.
Cone-shaped Sm-doped CeO2 (Ce0.8Sm0.2O1.9, SDC) electrolyte cylinders have been fabricated using the slip-casting technique. A single solid oxide fuel cell has been prepared by applying a Sm0.5Sr0.5CoO3 cathode on the outside of the cylinders and a NiO–SDC (7:3 wt%) anode on the inside. The open circuit voltage of the cell was 0.93 V at 400°C, and a maximum power density of about 300 mW/cm2 at 700°C was obtained with humidified hydrogen (3% H2O) as the fuel and ambient air as the oxidant. Impedance results showed that the performance of the cell was mainly influenced by the ohmic resistance of the electrolyte.  相似文献   

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