共查询到19条相似文献,搜索用时 171 毫秒
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近年来,由于有机场效应晶体管(OFET)具有成本低、机械柔性优异且可大面积制备等优点成为国际研究的前沿领域之一.迄今为止,OFET的载流子迁移率已超过了非晶硅薄膜晶体管,在柔性集成电路中表现出了巨大的应用潜力.随着技术的不断改进,OFET的工作频率不断提高.首先阐述了泄漏电流的来源;然后介绍了影响OFET静态功耗的最主要因素是栅极泄漏电流,总结了近年来降低OFET栅极泄漏电流的主要方法,如构建多层结构的栅介质、开发新型栅介质材料和交联栅介质材料;最后对降低OFET泄漏电流的方法进行了展望. 相似文献
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采用底栅顶接触结构,研究制备了以并五苯为有源层、聚甲基丙烯酸甲酯(PMMA)为绝缘层的全有机场效应晶体管(OFET),其中绝缘层采用溶液旋涂法制备,电极采用MoO3/Al双层电极。与传统采用单一Au为电极的器件相比,采用双层电极的器件性能大幅提高,经测试,器件的迁移率达到了0.133cm2/Vs,开关电流比可以达到2.61×105。对采用MoO3修饰层提高性能的作用机理进行了详细论证。 相似文献
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详细介绍了在SiO2和高kHfO2介质层上制备并五苯薄膜晶体管方面的研究,特别是利用原子力显微技术(AFM)和静电力显微技术(EFM)研究了并五苯分子初始生长模式,揭示了衬底形貌、表面化学性能(包括化学清洗和聚合物层修饰)对有机半导体成膜结构和薄膜场效应晶体管性能之间的关联,包括晶体管迁移率、开关比和阈值电压等;针对并五苯初始生长成核模式的差异,分析了不同岛(畴)间畴边界对载流子在有机薄膜内输运的影响,有助于理解有机半导体薄膜导电机理。通过优化和控制介电层和有机半导体薄膜层的界面化学性质,在SiO2介质层上成功制备出迁移率为1.0cm2/V.s、开关电流比达到106的OTFT器件;在高kHfO2介质层上获得的OTFT器件的工作电压在-5V以下,开关电流比达到105,载流子迁移率为0.6cm2/V.s;器件性能指标已经达到目前国际上文献报道的最好水平。 相似文献
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基于聚合物电介质的并五苯场效应晶体管 总被引:1,自引:1,他引:0
采用顶接触结构分别在SiO2、聚甲基丙烯酸甲酯(PMMA)绝缘层上制备了以并五苯为有源层的两种有机场效应晶体管(OFET),其中SiO2绝缘层采用热生长法制备,PMMA绝缘层采用溶液旋涂法制备。与常规基于无机绝缘层的器件相比,采用聚合物为绝缘层后,不但器件的制作工艺简化和成本降低,而且器件性能大幅提高,经测试,器件的迁移率提到0.153cm2/Vs,而阈值电压降低6V。采用原子力显微镜(AFM)、X射线衍射(XRD)等对器件性能提高的原因进行了详细分析。 相似文献
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详细介绍了在SiO2和高kHfO2介质层上制备并五苯薄膜晶体管方面的研究,特别是利用原子力显微技术(AFM)和静电力显微技术(EFM)研究了并五苯分子初始生长模式,揭示了衬底形貌、表面化学性能(包括化学清洗和聚合物层修饰)对有机半导体成膜结构和薄膜场效应晶体管性能之间的关联,包括晶体管迁移率、开关比和阈值电压等;针对并五苯初始生长成核模式的差异,分析了不同岛(畴)间畴边界对载流子在有机薄膜内输运的影响,有助于理解有机半导体薄膜导电机理。通过优化和控制介电层和有机半导体薄膜层的界面化学性质,在SiO2介质层上成功制备出迁移率为1.0cm^2/V.s、开关电流比达到10^6的OTFT器件;在高kHfO2介质层上获得的OTFT器件的工作电压在-5V以下,开关电流比达到10^5,载流子迁移率为0.6cm^2/V.s;器件性能指标已经达到目前国际上文献报道的最好水平。 相似文献
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采用顶接触结构研究制备了以TIPS-pentacene为有源层、聚甲基丙烯酸甲酯(PMMA)为绝缘层的有机场效应晶体管(OFET),其中绝缘层采用溶液旋涂法制备,电极采用Au电极。通过原子力显微镜(AFM)和X射线衍射(XRD)技术对TIPS-pentacene在PMMA上的生长特性进行了详细分析,结果表明,器件获得了良好的电学特性,其场效应迁移率、阈值电压以及开关电流比分别为0.137 cm2/Vs、-19 V和9.74×104。对器件的稳定性也做了详细研究。 相似文献
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A cardanol-based polymer, poly(2-hydroxy-3-cardanylpropyl methacrylate) (PHCPM), was utilized as the gate dielectric of an organic field-effect transistor (OFET). PHCPM has good surface properties, appropriate gate dielectric characteristics, and good compatibility with solution-processed semiconducting polymers. The electrical properties of an FET that was prepared with natural resource-based PHCPM as a gate dielectric layer and solution-processed poly[2,5-bis(3-dodecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT) as a semiconducting layer were investigated on flexible substrates. The flexible PBTTT-OFET device with the PCHPM gate dielectric exhibited high mobility and reliable performance, even in the bending state, without significant hysteresis. 相似文献
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Jingjing Lu Dapeng Liu Jiachen Zhou Yingli Chu Yantao Chen Xiaohan Wu Jia Huang 《Advanced functional materials》2017,27(20)
The thin‐film structures of chemical sensors based on conventional organic field‐effect transistors (OFETs) can limit the sensitivity of the devices toward chemical vapors, because charge carriers in OFETs are usually concentrated within a few molecular layers at the bottom of the organic semiconductor (OSC) film near the dielectric/semiconductor interface. Chemical vapor molecules have to diffuse through the OSC films before they can interact with charge carriers in the OFET conduction channel. It has been demonstrated that OFET ammonia sensors with porous OSC films can be fabricated by a simple vacuum freeze‐drying template method. The resulted devices can have ammonia sensitivity not only much higher than the pristine OFETs with thin‐film structure but also better than any previously reported OFET sensors, to the best of our knowledge. The porous OFETs show a relative sensitivity as high as 340% ppm?1 upon exposure to 10 parts per billion (ppb) NH3. In addition, the devices also exhibit decent selectivity and stability. This general and simple strategy can be applied to a wide range of OFET chemical sensors to improve the device sensitivity. 相似文献
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Yong Xu Yun Li Songlin Li Francis Balestra Gerard Ghibaudo Wenwu Li Yen‐Fu Lin Huabin Sun Jing Wan Xinran Wang Yufeng Guo Yi Shi Yong‐Young Noh 《Advanced functional materials》2020,30(20)
Unreliable mobility values, and particularly greatly overestimated values and severely distorted temperature dependences, have recently hampered the development of the organic transistor field. Given that organic field‐effect transistors (OFETs) have been routinely used to evaluate mobility, precise parameter extraction using the electrical properties of OFETs is thus of primary importance. This review examines the origins of the various mobilities that must be determined for OFET applications, the relevant extraction methods, and the data selection limitations, which help in avoiding conceptual errors during mobility extraction. For increased precision, the review also discusses device fabrication considerations, calibration of both the specific gate‐dielectric capacitance and the threshold voltage, the contact effects, and the bias and temperature dependences, which must actually be handled with great care but have mostly been overlooked to date. This review serves as a systematic overview of the OFET mobility extraction process to ensure high precision and will also aid in improving future research. 相似文献
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Jaeyoung Jang Sooji Nam Dae Sung Chung Se Hyun Kim Won Min Yun Chan Eon Park 《Advanced functional materials》2010,20(16):2611-2618
A novel application of ethylene‐norbornene cyclic olefin copolymers (COC) as gate dielectric layers in organic field‐effect transistors (OFETs) that require thermal annealing as a strategy for improving the OFET performance and stability is reported. The thermally‐treated N,N′‐ditridecyl perylene diimide (PTCDI‐C13)‐based n‐type FETs using a COC/SiO2 gate dielectric show remarkably enhanced atmospheric performance and stability. The COC gate dielectric layer displays a hydrophobic surface (water contact angle = 95° ± 1°) and high thermal stability (glass transition temperature = 181 °C) without producing crosslinking. After thermal annealing, the crystallinity improves and the grain size of PTCDI‐C13 domains grown on the COC/SiO2 gate dielectric increases significantly. The resulting n‐type FETs exhibit high atmospheric field‐effect mobilities, up to 0.90 cm2 V?1 s?1 in the 20 V saturation regime and long‐term stability with respect to H2O/O2 degradation, hysteresis, or sweep‐stress over 110 days. By integrating the n‐type FETs with p‐type pentacene‐based FETs in a single device, high performance organic complementary inverters that exhibit high gain (exceeding 45 in ambient air) are realized. 相似文献
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Chuan Liu Yun Li Takeo Minari Kazuo Takimiya Kazuhito Tsukagoshi 《Organic Electronics》2012,13(7):1146-1151
We report one-step formation of the gate dielectric and conduction channel for enhancing the performance of organic field effect transistors (OFETs). The resulting OFET with the semiconductor/dielectric bi-layers spun in ambient conditions exhibits μFET up to 1.6 cm2/V s and on–off ratio higher than 106, no additional treatment needed. Contact angle measurements and absorption spectra reveals that a well-defined semiconductor-top and dielectric-bottom film form after spin-coating the mixture of the two components, which is due to the surface induced self-organized phase separation. Compared to the single layer semiconductor film, the staggered film exhibits over 5 times higher mobility and nearly 90% reduced hysteresis in OFET. The higher performance is attributed to the simultaneous optimization in the dielectric interface and semiconductor crystallization. The approach is significant for the fabrication of low cost, easy processed and high performance OFETs. 相似文献
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Jaeyoung Jang Sooji Nam Dae Sung Chung Se Hyun Kim Won Min Yun Chan Eon Park 《Advanced functional materials》2010,20(16)
A novel application of ethylene‐norbornene cyclic olefin copolymers (COC) as gate dielectric layers in organic field‐effect transistors (OFETs) that require thermal annealing as a strategy for improving the OFET performance and stability is reported. The thermally‐treated N,N′‐ditridecyl perylene diimide (PTCDI‐C13)‐based n‐type FETs using a COC/SiO2 gate dielectric show remarkably enhanced atmospheric performance and stability. The COC gate dielectric layer displays a hydrophobic surface (water contact angle = 95° ± 1°) and high thermal stability (glass transition temperature = 181 °C) without producing crosslinking. After thermal annealing, the crystallinity improves and the grain size of PTCDI‐C13 domains grown on the COC/SiO2 gate dielectric increases significantly. The resulting n‐type FETs exhibit high atmospheric field‐effect mobilities, up to 0.90 cm2 V?1 s?1 in the 20 V saturation regime and long‐term stability with respect to H2O/O2 degradation, hysteresis, or sweep‐stress over 110 days. By integrating the n‐type FETs with p‐type pentacene‐based FETs in a single device, high performance organic complementary inverters that exhibit high gain (exceeding 45 in ambient air) are realized. 相似文献
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The pentacene-based organic field effect transistor (OFET) with a thin transition metal oxide (WO3) layer between pentacene and metal (AI) source/drain electrodes was fabricated. Compared with conventional OFET with only metal AI source/drain electrodes, the introduction of the WO3 buffer layer leads to the device performance enhancement. The effective field-effect mobility and threshold voltage are improved to 1.90 em2/(V.s) and 13 V, respectively. The performance improvements are attributed to the decrease of the interface energy barrier and the contact resistance. The results indicate that it is an effective approach to improve the OFET performance by using a WO3 buffer layer. 相似文献
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Shan-Ci Chen Dhanavel GaneshanDongdong Cai Qingdong ZhengZhigang Yin Fei Wang 《Organic Electronics》2013,14(11):2859-2865
We report on the performance of organic field-effect transistors (OFETs) by using a series of angular-shaped naphthalene tetracarboxylic diimides as active layers. The fabricated OFET devices exhibit n-type semiconducting characteristics. The performance of OFETs can be substantially improved by modifying the surface of the gate dielectric chemically prior to the deposition of the organic semiconductors. An increased electron mobility of the OFETs was found owing to the improved crystallinity and enlarged grain sizes, which are attributed to the elevating substrate temperature during the semiconductor deposition. The highest mobility of 0.515 cm2/V s was achieved from a device fabricated at substrate temperature of 130 °C with octadecyltrichlorosilane (OTS) surface modification. 相似文献