Ti3SiC2/TiB2复合材料的制备及其组织和力学性能

以2TiC／Ti／Si／0．2Al／TiB2粉为原料，采用热压烧结工艺成功制备了Ti3SiC2／TiB2复合材料。结果表明：不同TiB2含量的试样中主晶相为Ti3siC2与TiB2两相，没有发现其它杂质相；当复合材料中TiB2的体积分数为10％时，其硬度、抗压强度、弯曲强度、断裂韧性都有显著的提高。经热处理后，Ti3SiC2／10％TiB2复合材料的弯曲强度由367．5MPa     

Cu-Ti3SiC2复合材料真空热压法制备及性能研究

Ti3SiC2是一种具有MAX层状结构的先进材料,兼具金属与陶瓷的双重性能。将Ti3SiC2作为弥散强化相与Cu复合制备金属基复合材料,综合力学性能较好,有望在电接触材料中有较好的应用前景。采用热压烧结法制备Cu-Ti3SiC2复合材料,试验证明Cu-Ti3SiC2复合材料的最佳烧结工艺为:烧结温度750℃,压力30 MPa,保温30min,制得复合材料的组织均匀,团聚较少。其次研究了Ti3SiC2含量对复合材料硬度、电阻率等性能的影响,随着Ti3SiC2的体积分数的增加,硬度先增加后降低,相对密度和抗弯强度呈减小趋势,电阻率增加;通过微观显微分析,Cu-Ti3SiC2致密度随Ti3SiC2含量增加而下降。     

Si和Al对机械合金化合成Ti3SiC2的影响

采用3Ti／Si／2C单质粉体为原料,进行机械合金化,以合成Ti3SiC2粉体。研究了Al和过量Si对机械合金化合成Ti3SiC2的影响。研究结果表明,机械合金化单质混合粉体,会诱发自蔓延反应。反应后产生大量坚硬的颗粒状产物。机械合金化3Ti／Si／2C粉体,会产生组成相为TiC、Ti3SiC2、TiSi2和Ti5Si3的粉体与颗粒产物。添过量Si并不会促进机械合金化反应合成Ti3SiC2。添适量Al可消除硅化物,明显促进反应合成Ti3SiC2。采用3Ti／Si／2C／0．15Al粉体作原料时,颗粒产物中Ti3SiC2含量最高,为92．8wt％;而采用3Ti／Si／2C／0．20Al粉体作原料时,粉体产物中Ti3SiC2含量最高,为61．9wt％。     

SiC/Cu复合材料磨损界面研究

采用非均相沉淀法制备了SiC／Cu包裹复合粉体,热压烧结制备SiC／Cu复合材料．以Si3N4球为摩擦副,在400℃条件下进行磨损实验．采用XRD、SEM分别对磨损前后材料的界面物相、磨损界面的形貌以及裂纹的扩展变化情况进行分析．结果表明：在该实验条件下,SiC／Cu复合材料界面的物相随着磨损的进行发生变化,Cu2O含量大大增加,同时出现CuO．随着循环荷载的增加,复合材料的内部产生了裂纹,裂纹的扩展是沿着SiC／Cu界面进行;而SiC颗粒的存在,使复合材料内部裂纹发生偏转,有利于提高材料的耐磨性．     

Ti3SiC2及Ti3SiC2基复合材料的研究现状及发展

介绍了Ti3SiC2陶瓷材料的微观结构与性能，认为该材料良好的综合性能有望解决陶瓷材料的脆性问题．并概述了Ti3SiC2及Ti3SiC2基复合材料各种制备方法的特点和研究状况、应用前景和发展趋势．     

Al2O3对3Ti/Si/2C体系自蔓延高温合成Ti3SiC2的影响

以3Ti/Si/2C粉体为原料,通过自蔓延高温合成技术合成了Ti3SiC2材料。研究了Al2O3助剂对自蔓延高温合成Ti3SiC2的影响。研究结果表明,3Ti/Si/2C粉体会发生自蔓延反应,产物的组成相为TiC、Ti3SiC2和Ti5Si3,产物中Ti3SiC2含量约为23%。添加适量的细粒度Al2O3可显著促进反应合成Ti3SiC2,3Ti/Si/2C/0.1Al2O3原料反应后得到的产物中Ti3SiC2含量达64%。     

Ti_3SiC_2增强铝基复合材料的摩擦磨损特性研究

通过机械合金化制备出了Ti3SiC2粉体,真空热处理对机械合金化粉体进行了提纯,采用脉冲放电等离子烧结(SPS)技术制备出了Ti3SiC2/Al复合材料,并对该复合材料进行了组织观察和摩擦磨损特性的表征。研究结果表明,采用机械合金化技术可以将Ti,Si和C单质粉体合成Ti3SiC2,机械合金化合成Ti3SiC2粉体中含有的TiC杂质相可通过真空热处理去除,当热处理温度为1 000℃时,可将Ti3SiC2的纯度提高至99.1%。在550℃时,采用SPS技术烧结的Ti3SiC2/Al复合材料组织均匀摩擦磨损特性优良,其中含5 vol%Ti3SiC2的复合材料摩擦系数较低且耐磨性较好。     

Ni-Ti/SiC系统的润湿及界面反应产物研究

采用座滴法研究了Ni-Ti粉末在SiC陶瓷界面的润湿行为，结果显示，Ti含量增加、温度升高、保温时间延长，Ni-Ti／SiC陶瓷系统润湿性均得到改善。界面区域的SEM、EDS、XRD分析表明，活性元素Ti在界面富集形成富Ti化合物区域，可能生成的产物相有TiSi2、Ti5Si3、TiC、Ti2Ni和Ni3C，产物类型与金属粉料原始组分及润湿条件有关。当Ti含量为Ni-Ti粉末焊料的50％（质量分数）时，其产物为以TiC、Ti2Ni为主含少量Ni3C的混合物，借助于Ti2Ni的液相传质和TiC与SiC陶瓷良好的晶格匹配关系可以实现界面的良好润湿。     

层状三元碳化物Ti3SiC2及其制备研究

三元碳化物Ti3SiC2属于层状六方晶体结构，空间群为P63／mmC；它同时具有金属和陶瓷的优良性能，有良好的导电和导热能力，在室温下可切削加工，在高温下有良好的热稳定性和塑性变形能力，还具有优异的抗氧化性能，抗热震等；应用CVD、SHS、HP／HIP等方法可制备该化合物，用HIP方法能制备高纯、致密的Ti3SiC2陶瓷。最近，以元素单质粉为原料，采用放电等离子烧结工艺成功制备了高纯Ti3SiC2材料。     

SiC／Cu粉团聚状态对SiC沉积率的影响

采用亚音速火焰喷涂技术制备了SiC／Cu金属基复合材料,研究了碳化硅与铜喷涂前团聚状态对碳化硅沉积率的影响．与未经团聚处理粉相比,SiC／Cu经团聚处理后沉积层中碳化硅沉积率高出1倍多．     

Electronic Structure and Chemical Bond of Ti3SiC2 and Adding Al Element

The relation among electronic structure, chemical bond and property of Ti3SiC2 and Al-doped was studied by density function and discrete variation （ DFT- DVM） method. When Al element is added into Ti3 SiC2 , there is a less difference of ionic bond, which does not play a leading role to influent the properties. After adding Al, the covalent bond of Al and the near Ti becomes somewhat weaker, but the covalent bond of Al and the Si in the same layer is obviously stronger than that of Si and Si before adding. Therefore, in preparation of Ti3 SiC2 , adding a proper quantity of Al can promote the formation of Ti3 SiC2 . The density of stnte shows that there is a mixed conductor character in both of Ti3 SiC2 and adding Al element. Ti3 SiC2 is with more tendencies to form a semiconductor. The total density of state near Fermi lever after adding Al is larger than that before adding, so the electric conductivity may increase after adding Al.     

Processing and properties of 2D SiC/SiC composites by precursor infiltration and pyrolysis

Two-dimensional plain-weave silicon carbide fiber fabric reinforced silicon carbide (2D-SiC/SiC) composites were molded by stacking method and densified through precursor infiltration and pyrolysis (PIP) process. SiC coating was deposited as the fiber/matrix interphase layer by chemical vapor deposition (CVD) technique. Fiber/matrix debonding and relatively long fiber pullouts were observed on the fracture surfaces. Additionally, the flexural strength and elastic modulus of the composites with and without fiber/matrix interphase layer were investigated using three-point bending test and single-edge notched beam test. The results show that the fiber fraction and the porosity of 2D-SiC/SiC composites with and without coating are 27.2% (volume fraction) and 11.1%, and 40.7% (volume fraction) and 7.5%, respectively. And the flexural strength and elastic modulus of 2D-SiC/SiC composites with and without coating are 363.3 MPa and 127.8 GPa, and 180.2 MPa and 97.2 GPa, respectively. With a proper thickness, the coating can effectively adjust the fiber/matrix interface, thus causing a dramatic increase in the mechanical properties of the composites. Foundation item: Project(NCET-07-0228) support by the New Century Excellent Talents in University     

SiC涂层的快速气相沉积

介绍了一种采用化学气相沉积技术，利用SiCl4 CH4体系快速沉积SiC涂层的方法，并讨论了工艺条件对沉积过程的影响．结果表明，采用SiCl4 CH4体系在900℃便可实现SiC的快速沉积，此方法所得SiC涂层的纯度不高，但适用于制备构件的抗烧蚀涂层．     

Effects of different atmospheres on the arc erosion behaviors of Ti3SiC2 cathodes

The effects of ambient atmospheres on the arc erosion behaviors of Ti_3SiC_2 cathodes were investigated at 5.5 kV in argon,nitrogen, air, and oxygen. The mass loss of the cathodes increased in the order of argon, nitrogen, air, and oxygen and the morphologies were measured by 3D laser scanning confocal microscope with a gradual blooming phenomenon. Raman spectroscopy, X-ray diffraction, and X-ray photoelectron spectroscopy were employed to detect the components of erosion regions.The erosion-chemical products mainly consisted of TiN_x in nitrogen, TiN_x, TiO_2 and SiO_2 in air, TiO_2 and SiO_2 in oxygen. The arc energy was responsible for the arc erosion characteristics in different atmospheres.     

Environmental Effects on Microstructural Stability of SiC/SiC Composites

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TiB_2/SiC陶瓷复合材料制备工艺的研究

以TiO2、B4C和C为原料,基于原位合成法在SiC基体中生成TiB2颗粒,并采用无压烧结法制备出TiB2/SiC复合陶瓷.通过对复合材料制备工艺的研究,发现：高于1 300℃的预烧结能形成TiB2/SiC复合陶瓷坯体.C含量、烧结温度和保温时间对复合材料的相对密度均有影响.当C含量（质量分数）为4%时、在1 400℃×60 min＋2000℃×30 min的烧结工艺下能够制备出致密的TiB2/SiC陶瓷复合材料.微米级TiO2粉比纳米级TiO2粉更有利于形成较致密的烧结复合材料.随着生成TiB2体积分数的增加（5%～20%）,复合材料中TiB2颗粒逐渐粗化,间距逐渐变小.对复合材料的烧结机理还进行了分析.     

Tribological properties of SiC/Cu composite at high temperature

SiC/Cu composites were prepared by hot pressing. The high temperature tribological properties of the composites were investigated. XRD, SEM techniques were carried out to characterize the samples. It is found that the friction coefficient of SiC/Cu composites increases with the increasing SiC content. The SiC reinforcement particles are worn down other than removed by pulling out during the wear test. Oxidation of Cu debris leads to the smooth contacting surface. Ring crack is formed under the cyclic wear test. The crack propagates through the damaged matrix and along the brittle interface between SiC particles and Cu matrix.     

多晶SiC/多孔硅结构材料的APCVD生长及表征

采用SiH₄-C₃H₈-H₂气体反应体系,通过常压化学气相淀积(APCVD)工艺在电化学腐蚀的多孔硅衬底上进行了多晶3C-SiC薄膜的生长,研究了多孔硅孔隙率对薄膜生长质量的影响．实验结果表明,当多孔硅孔隙率较低时,得到的是含有SiC(111)晶粒的多晶硅薄膜,随着孔隙率的增加,生长薄膜由富碳多孔SiC向多晶SiC薄膜过渡,表面平整度增加,并具有<111>晶向择优生长的特点．