成像干涉光刻技术及其频域分析

传统光学光刻技术(OL)由于其固有的限制,虽然可对任意图形成像,但分辨力较低。无掩模激光干涉光刻技术(IL)的分辨力可达l /4,却局限于周期图形。成像干涉光刻技术(IIL)结合了二者的优点,用同一个系统分次传递物体不同的空间频率,能更有效地传递物体的信息,以高分辨力对任意图形成像。初步模拟研究表明,在同样的曝光波长和数值孔径下,对同样特征尺寸的掩模图形,IIL得到的结果好于OL。在CD=150nm时,IIL相对于OL把分辨力提高了1.5倍多。     

掩模投影成像干涉光刻研究

掩模投影成像干涉光刻技术以在很小或几乎不增加光刻系统成本的基础上来提高光刻分辨率为目的,充分利用系统的有限孔径,将掩模图形不同的空间频率分别进行传递,最终以高分辨率对掩模成像。本文阐述了IIL的基本原理,介绍了一种实验系统,并给出了部分模拟和实验结果。研究结果表明,掩模投影成像干涉光刻技术比传统投影光刻能够得到更高的光刻分辨率。     

用于大面积周期性图形制造的激光干涉光刻

用两束或多束相干激光束以不同的组合形式对光致抗蚀剂曝光,可在大面积范围内产生精细的二维周期性图形,这个方法特别适合于产生光电子器件和生电子器件的周期性结构。介绍激光干涉光刻的基本原理,对几种光束组合干涉方法给出了理论推导结果,并进行了计算机模拟。初步的实验结果表明,用激光干扰光刻技术产生大面积的亚微米级周期性孔、柱、锥图形是可行的。该方法不需要掩模、昂贵的光刻成像透镜、新的短波长光源和新型的抗蚀剂,提供了得到高分辨、无限焦深、大面积光刻的可能性。     

振幅分割无掩模激光干涉光刻的实现方法

无掩模激光干涉光刻中的分束方法一般有波前分割和振幅分割。研究和比较了振幅分割无 掩模激光干涉光刻方法和系统,包括振幅分割双光束干涉系统、三光束干涉系统、液浸式深紫外干涉系统及全自动干涉光刻系统。建立了双光束双曝光干涉光刻实验系统。模拟和实验结果表明,对点阵或孔阵图形,在同样的图形尺度下,无掩模干涉光刻比传统光刻简单得多。     

微光刻相移掩模技术研究

本文系统地论述了提高光刻分辨率的相移掩模技术的基本原理、计算模拟和光刻曝光实验 ;给出了模拟和实验结果 ;研究表明 ,只有在一定的临界参数条件下 ,相移掩模才能明显地改善分辨率和工艺宽容度 ;采用无铬相移掩模得到了 0 .2 μm的清晰抗蚀剂图形 ,证明了相移掩模在提高光刻分辨率、延长光刻技术寿命以及推进光刻技术极限发展方面的优良性能     

用于100nm节点ArF准分子激光光刻的相移掩模技术

用于100nm节点ArF准分子激光光刻的相移掩模(PSM)技术主要有无铬相移掩模(CPM),交替相移掩模(APSM)、衰减相移掩模(AttPSM)和混合相移掩模技术。对这些掩模的基本原理、制作方法及性能比较进行了分析研究。研究表明,无铬相位光刻(CPL)PSM和高透AttPSM 相结合构成的混合掩模最适合用于193nmArF光刻,以产生100nm节点抗蚀剂图形。     

波前分割无掩模激光干涉光刻的实现方法

激光干涉光刻不受传统光学光刻系统光源和数值孔径的限制,其极限尺寸CD达到曝光波长 的1/4,研究了波前分割双光束、三光束方法及四光束无掩模激光干涉光刻方法,提出了可用于五光束和多种多光束和多次曝光的梯形棱镜波前分割干涉光刻方法。用自行建立的梯形棱镜波前分割系统进行了多光束干涉曝光实验,得到孔尺寸约220nm的阵列图形。     

用于KrF准分子激光光刻的三相移掩模

讨论了相移掩模提高光刻分辨力的基本原理,提出了一种抗蚀剂相移器制作衰减相移掩模的新方法,利用自行设计、建立的ＫｒＦ准分子激光投影光刻实验曝光系统进行了实验研究,给出了实验结果,并与传统光刻方法作了比较。     

用于KrF准分子激光光刻的衰减相移掩模

讨论了相移掩模提高光刻分辨力的基本原理,提出了一种抗蚀剂相移器制作衰减相移掩模的新方法,利用自行设计、建立的KrF准分子激光投影光刻实验曝光系统进行了实验研究,给出了实验结果,并与传统光刻方法作了比较.     

制作光纤光栅的相移掩模-双光束干涉曝光方法

介绍将无铬相移掩模技术和双光束干涉曝光技术用于制作纳米级图形光纤光栅的基本原 理和实验系统设计。提出一种用可移动反射镜使写入光束扫描固定在一起的相移掩模和光纤组合体制作光纤光栅的方法,既便于系统调整,增强曝光能量,又可方便制作高分辨力、长尺寸光纤光栅,无论是周期光栅,还是非周期光栅。     

电子束散射角限制投影光刻掩模研制

掩模制作是电子束散射角限制投影光刻(SCALPEL)的关键技术。通过优化工艺,制作出具有“纳米硅镶嵌结构”的低应力SiNx薄膜作为支撑;开发了电子束直写胶图形的加法工艺,在支撑薄膜上得到清晰的钨 / 铬散射体图形。研制出的SCALPEL掩模,其晶片尺寸为80mm,图形线宽达到0.1m,经缩小投影曝光得到78nm的图形分辨力。     

Programmable chemical gradient patterns by soft grayscale lithography

A method for fabricating chemical gradients on planar and nonplanar substrates using grayscale lithography is reported. Compliant grayscale amplitude masks are fabricated using a vacuum-assisted microfluidic filling protocol that employs dilutions of a carbon-black-containing polydimethylsiloxane emulsion (bPDMS) within traditional clear PDMS (cPDMS) to create planar, fully self-supporting mask elements. The mask is then placed over a surface functionalized with a hydrophobic coumarin-based photocleavable monolayer, which exposes a polar group upon irradiation. The mask serves to modulate the intensity of incident UV light, thereby controlling the density of molecules cleaved. The resulting molecular-level grayscale patterns are characterized by condensation microscopy and imaging mode time-of-flight secondary-ion mass spectrometry (ToF-SIMS). Due to the inherent flexibility of this technique, the photofuse as well as the gradient patterns can be designed for a wide range of applications; in this paper two proof-of-concept demonstrations are shown. The first utilizes the ability to control the resulting contact angle of the surface for the fabrication of a passive pressure-sensitive microfluidic gating system. The second is a model surface modification process that utilizes the functional groups deprotected during the photocleavage to pattern the deposition of moieties with complementary chemistry. The spatial layout, resolution, and concentration of these covalently linked molecules follow the gradient pattern created by the grayscale mask during exposure. The programmable chemical gradient fabrication scheme presented in this work allows explicit engineering of both surface properties that dictate nonspecific interactions (surface energy, charge, etc.) and functional chemistry necessary for covalent bonding.     

利用近场衍射进行接近式衍射缩小曝光的方法

通过对接近式光刻中光通过掩模版后的近场衍射特性的计算机模拟分析和曝光实验，提出了一种新型的接近式衍射小曝光方法，适用于紫外和Ｘ射线的接近曝光技术条件下，实现缩小曝光，可使实现亚半微米线宽图形的曝光和使基掩模版制作更为容易；并且具有等量缩小和焦深大的特点。     

纳米光刻中莫尔对准模型与应用

在纳米光刻中,采用周期相差不大的两光栅分别作为掩模和硅片上的对准标记.当对准光路通过这两个标记光栅时受到两次调制,发生双光栅衍射及衍射光的干涉等复杂现象,最后形成有规律、且呈一定周期分布的莫尔条纹.周期相对光栅周期被大幅度放大,条纹移动可表征两标记的相对位移,具有很高探测灵敏度,可用于纳米级高精度对准.从傅里叶光学角度分析推导了对准应用中,两频率接近的光栅重叠时莫尔条纹振幅空间近似分布规律.并设计了一组对准标记,能继续将灵敏度提高一倍.通过仿真分析,从大致上定量地验证条纹复振幅分布的近似数学模型以及光刻对准应用中的条纹对准过程.     

Progress in deep-UV photoresists

Higher resolution can be achieved in lithography by decreasing the wavelength of the exposure source. However, resist material and their processing are also important when we move to a shorter wavelength lithography technology. This paper reviews the recent development and challenges of deep-UV photoresists and their processing technology.     

50 nm resolution,defect-free,electron-beam resists produced with monomer/polymer multilayer films

Recent technological advances in very large scale integration (VLSI) are beginning to outstrip the technology used to produce these circuits. Ultraviolet and optical lithography techniques are producing resist patterns with resolutions approaching the expected minimum. Application needs demand that this minimum be improved to achieve more features per unit area of circuit. We have achieved a potentially major breakthrough towards improving the resolution of resist patterns. Through the use of monomer/polymer multilayers, line resolutions produced by way of a novel computer-controlled electron beam technique is now possible. The relative ease and high reliability of multilayer formation ensures uniform films of a thickness an order of magnitude less than spin cast film thicknesses. The high electron sensitivities of these films enables excellent degradation (or polymerization) upon exposures to an electron beam. Final pattern resolution, for both positive and negative resists, is an order of magnitude higher than conventional resist resolutions, offering possible improvement in circuit capability. Morphological studies of these multilayer films provide unique information on domain size and structure. The ultimate morphology of these films is shown to be dependent on deposition conditions as well as the substrate used.     

Relevance of mask-roughness-induced printed line-edge roughness in recent and future extreme-ultraviolet lithography tests

The control of line-edge roughness (LER) of features printed in photoresist poses significant challenges to next-generation lithography techniques such as extreme-ultraviolet (EUV) lithography. Achieving adequately low LER levels requires accurate resist characterization as well as the ability to separate resist effects from other potential contributors to LER. One potentially significant contributor to LER arises from roughness on the mask coupling to speckle in the aerial image and consequently to LER in the printed image. Here I numerically study mask surface roughness and phase roughness to resist LER coupling both as a function of illumination coherence and defocus. Moreover, the potential consequences of this mask effect for recent EUV lithography experiments is studied through direct comparison with experimental through-focus printing data collected at a variety of coherence settings. Finally, the effect that mask roughness will play in upcoming 0.3-numerical-aperture resist testing is considered.