一种跟踪温度的电流源失配前台校准技术

提出了一种应用于超高速D/A转换器电流源失配的前台校准技术。设计了两个校准子DAC,其分别提供的校准电流用以补偿电流源失配的两大组成部分,每一个校准DAC具有与其对应的失配部分同样的温度特性。因此,总校准电流可以自动跟踪温度的变化。两个校准子DAC采用两个不同的偏置电流替代不同的温度,再经设计的校准算法获得校准数码。该校准方案可有效减少校准时间,提升前台校准的温度稳定性。基于标准65 nm CMOS工艺设计的16位12 GS/s电流舵D/A转换器验证了这项前台校准技术。测试结果表明,模拟输出为1 GHz时,该DAC的SFDR达到65 dBc;通过校准后,在-55℃~125℃范围内,DNL的变化率小于8%,INL的变化率小于5%。相比其他同类校准技术,该校准技术能获得更好的温度稳定性。     

一种用于高精度D/A转换器的数字校准技术

介绍了一种用于400MSPS16位高精度电流舵D/A转换器的数字静态校准技术。该校准技术利用地址产生器、钟控比较器、SAR寄存器和校准DAC,构成逐次逼近式校准环路。利用该校准环路,可以自动完成高7位电流源阵列单元的校准,从而极大地提高电流源的匹配性。采用该校准技术的16位电流舵D/A转换器的DNL大于±0.5LSB,达到了真正的16位精度。     

12位80MHz采样率具有梯度误差补偿的CMOS电流舵D/A转换器实现

提出了一种12位80 MHz采样率具有梯度误差补偿的电流舵D/ A转换器实现电路.12位DAC采用分段式结构,其中高8位采用单位电流源温度计码DAC结构,低4位采用二进制加权电流源DAC结构,该电路中所给出的层次式对称开关序列可以较好地补偿梯度误差.该D/ A转换器采用台湾U MC 2层多晶硅、2层金属(2 P2 M) 5 V电源电压、0 .5μm CMOS工艺生产制造,其积分非线性误差小于±0 .9L SB,微分非线性误差小于±0 .6 L SB,芯片面积为1.2 7mm×0 .96 m m ,当采样率为5 0 MHz时,功耗为91.6 m W.     

12位80MHz采样率具有梯度误差补偿的CMOS电流舵D/A转换器实现

提出了一种12位80MHz采样率具有梯度误差补偿的电流舵D/A转换器实现电路.12位DAC采用分段式结构,其中高8位采用单位电流源温度计码DAC结构,低4位采用二进制加权电流源DAC结构,该电路中所给出的层次式对称开关序列可以较好地补偿梯度误差.该D/A转换器采用台湾UMC 2层多晶硅、2层金属(2P2M)5V电源电压、0.5μm CMOS工艺生产制造,其积分非线性误差小于±0.9LSB,微分非线性误差小于±0.6LSB,芯片面积为1.27mm×0.96mm,当采样率为50MHz时,功耗为91.6mW.     

一种自偏置电流CMOS基准源的分析与设计

采用了一种结构新颖的CMOS基准源结构,该电路结构利用带隙基准结构产生的高精度PTAT电流作为内部OP AMP的自偏置电流,从而省去了PTAT电流产生电路,使芯片面积更小,基准电流更加接近理想的PTAT电流.该电路结构产生的带隙基准电压温漂达到18.8PPM/℃,PTAT电流几乎与电源电压无关.     

一种四象限14位乘法型D/A转换器设计

设计了一种14位乘法型D/A转换器。采用高3位温度计编码、低11位二进制编码的分段电流模R-2R电阻网络结构,规避了高分辨率二进制电流模R-2R电阻网络开关尺寸大、版图匹配难度大的缺点。基于混合信号CMOS工艺进行了流片,实测DNL在±0.5 LSB以内,INL在±0.8 LSB以内。该D/A转换器适用于工业控制、仪器仪表等领域。     

一款10 bit斜坡发生器的研究与设计

该文提出了一种粗分电流源加细分电流源的分段结构10 bit电流舵斜坡发生器。电路主要由电流源及开关电路、输出电路和校准电路构成。粗分电流源采用高6 bit温度计编码,细分电流源采用低4 bit二进制编码实现,单位电流源采用共源共栅结构。采用UMC0.18μm CMOS工艺对电路进行设计并仿真验证。验证结果表明,前仿真DNL为-0.012～+0.095 LSB,INL为-0.012～+0.008 LSB,后仿真DNL和INL分别为-0.005～+0.135 LSB,-0.045～+0.115 LSB,表明斜坡发生器线性度良好,满足系统要求。     

一种高速高分辨率电流舵D/A转换器的设计

基于0.18μm CMOS工艺,设计了一种电源电压为3.3 V/1.8 V(模拟电路部分电源电压为3.3 V,数字电路部分电源电压为1.8 V)、最大刷新率为200 MSPS、分辨率为14位的高速D/A转换器(DAC).该DAC采用传统的5-4-5温度计码与二进制权重码混合编码的分段电流舵结构.对电路中的关键模块,如运算放大器、带隙基准源,进行了优化设计;给出了整体电路的版图设计.仿真结果显示,采样频率为200 MHz时,DAC的SFDR为87 dB左右.     

一种应用于14 bit 200 MS/s电流舵型DAC的数字校准技术

电流舵型数模转换器(DAC)广泛应用于通信系统。采用电流分叉结构的电流舵型DAC可以极大地减小电流源阵列的面积。提出一种可以应用于采用电流分叉结构的电流舵型DAC的数字校准技术。提出的后台校准技术可以同时消除高位电流源阵列和低位电流源阵列的失配误差。基于0.18μm CMOS工艺,设计并流片了一款14bit 200MS/s电流舵型DAC,经过数字校准后,无杂散动态范围(SFDR)能够提高至少24dB。在时钟频率为200MS/s,输出信号为2MHz时,SFDR能够达到80dB以上。芯片面积为1.26mm2,功耗为125mW。     

一种应用于14 bit 200 MS/s电流舵型DAC的数字校准技术北大核心CSCD

电流舵型数模转换器(DAC)广泛应用于通信系统。采用电流分叉结构的电流舵型DAC可以极大地减小电流源阵列的面积。提出一种可以应用于采用电流分叉结构的电流舵型DAC的数字校准技术。提出的后台校准技术可以同时消除高位电流源阵列和低位电流源阵列的失配误差。基于0.18μm CMOS工艺,设计并流片了一款14bit 200MS/s电流舵型DAC,经过数字校准后,无杂散动态范围(SFDR)能够提高至少24dB。在时钟频率为200MS/s,输出信号为2MHz时,SFDR能够达到80dB以上。芯片面积为1.26mm2,功耗为125mW。     

A self-trimming 14-b 100-MS/s CMOS DAC

A 14-b 100-MS/s CMOS digital-analog converter (DAC) designed for high static and dynamic linearity is presented. The DAC is based on a central core of 15 thermometer decoded MSBs, 31 thermometer decoded upper LSBs (ULSBs) and 31 binary decoded lower LSBs (LLSBs). The static linearity corresponding to the 14-b specification is obtained by means of a true background self-trimming circuit which does not use additional current sources to replace the current source being measured during self-trimming. The dynamic linearity of the DAC is enhanced by a special track/attenuate output stage at the DAC output which tracks the DAC current outputs when they have settled but attenuates them for a half-clock cycle after the switching instant. The DAC occupies 3.44 mm×3.44 mm in a 0.35-μm CMOS process, and is functional at up to 200 MS/s, with best dynamic performance obtained at 100 MS/s. At 100 MS/s, power consumption is 180 mW from a 3.3-V power supply, and 210 mW at 200 MS/s     

A low-Voltage 10-bit CMOS DAC in 0.01-mm/sup 2/ die area

A low-voltage 10-bit digital-to-analog converter (DAC) for static/dc operation is fabricated in a standard 0.18-/spl mu/m CMOS process. The DAC is optimized for large integrated circuit systems where possibly dozens of such DAC would be employed for the purpose of digitally controlled analog circuit calibration. The DAC occupies 110 /spl mu/m/spl times/94 /spl mu/m die area. A segmented R-2R architecture is used for the DAC core in order to maximize matching accuracy for a minimal use of die area. A pseudocommon centroid layout is introduced to overcome the layout restrictions of conventional common centroid techniques. A linear current mirror is proposed in order to achieve linear output current with reduced voltage headroom. The measured differential nonlinearity by integral nonlinearity (DNL/INL) is better than 0.7/0.75 LSB and 0.8/2 LSB for 1.8-V and 1.4-V power supplies, respectively. The DAC remains monotonic (|DNL|<1 LSB) as INL reaches 4 LSB down to 1.3-V operation. The DAC consumes 2.2 mA of current at all supply voltage settings.     

A low-power inverted ladder D/a converter

Interpolating, dual resistor ladder digital-to-analog converters (DACs) typically use the fine, least significant bit (LSB) ladder floating upon the static most significant bit (MSB) ladder. The usage of the LSB ladder incurs a penalty in dynamic performance due to the added output resistance and switch matrix parasitic capacitance. Current biasing of the LSB ladder addresses this issue by employing active circuitry. We propose an inverted ladder DAC, where an MSB ladder slides upon two static LSB ladders. While using no active components this scheme achieves lower output resistance and parasitic capacitance for a given power budget. We present a 0.35-/spl mu/m, 3.3-V implementation consuming 22-/spl mu/A current with output resistance of 40 k/spl Omega/ and effective parasitic capacitance of 650 fF.     

A 10-b, 500-MSample/s CMOS DAC in 0.6 mm2

A 10-b current steering CMOS digital-to-analog converter (DAC) is described, with optimized performance for frequency domain applications. For sampling frequencies up to 200 MSample/s, the spurious free dynamic range (SFDR) is better than 60 dB for signals from DC to Nyquist. For sampling frequencies up to 400 MSample/s, the SFDR is better than 55 dB for signals from DC to Nyquist. The measured differential nonlinearity and integral nonlinearity are 0.1 least significant bit (LSB) and 0.2 LSB, respectively. The circuit is fabricated in a 0.35-μm, single-poly, four-metal, 3.3 V, standard digital CMOS process and occupies 0.6 mm². When operating at 500 MSample/s, it dissipates 125 mW from a 3.3 V power supply. This DAC is optimized for embedded applications with large amounts of digital circuitry     

基于QN旋转布局的10位500 MS/s分段电流舵DAC

针对分段电流舵数/模转换器（Digital-to-Analog Converter，DAC），通过理论分析和推导，研究电流源阵列系统失配误差和寄生效应对非线性的影响，采用电流源阵列Q^N旋转游走版图布局方案，能够减小电流源系统失配的一次误差，而且版图布线简单，由寄生效应引起的电流源失配较小，利于DAC非线性的优化.基于0.18μm CMOS，采用"6+4"的分段结构，设计了一种10位500MS/s分段电流舵DAC，流片测试结果表明，在输入频率为1.465MHz，采样速率为500MS/s的条件下，无杂散动态范围（Spurious Free Dynamic Range，SFDR）为64.9dB，有效位数（Effective Number of Bits，ENOB）为8.8 bit，微分非线性误差（Differential Non-linearity，DNL）和积分非线性误差（Integral Non-linearity，INL）分别为0.77LSB和1.12LSB.     

应用于AMOLED源极驱动的高精度DAC设计

针对OLED显示面板更高分辨率、更高精度的需求,本文提出了一种应用于高分辨率AMOLED源极驱动的高精度10bit DAC结构。设计的DAC由6bit的GAMMA校正电阻串DAC及4bit的基于尾电流源插值的输出缓冲器级联构成,达到高精度的同时占用较小的芯片面积。为进一步提高AMOLED驱动的灰阶电压精度,增加了一个DAC斜率可编程单元对线性DAC输出曲线进行进一步调节,以更好地拟合AMOLED显示屏所需的灰阶-电压曲线,此外,输出缓冲器采用尾电流源插值的方法来实现高精度的第二级DAC。在UMC 80nm CMOS工艺下,仿真结果表明设计的DAC的最大INL和DNL分别为0.47LSB、0.24LSB。在10kΩ电阻及30pF电容负载下,DAC电压从最低灰阶到最高灰阶的建立时间为3.38μs。驱动电路可以快速、精确地将图像数据转换为建立在像素电路上的电压,满足分辨率为1080×2 160驱动芯片的应用需求。     

A 130-MHz 8-b CMOS video DAC for HDTV applications

In order to achieve monotonicity and a high-speed performance, a current-cell matrix configuration and a parallel decoding circuit with one-stage latches have been used. A deglitching circuit has been introduced in the decoding stages to guarantee a low glitch energy. P-channel devices used as current sources ensure a low noise level and a ground-referenced voltage output in a doubly terminated 75-Ω transmission line. Experimental results have shown that the maximum conversion rate is 130 MHz and the integral and differential linearity errors are less than 0.5 LSB. The maximum glitch energy is 50 pS-V. The DAC has been developed in a 1-μm digital/analog CMOS technology. The entire circuit dissipates 150 mW at a 130-MHz conversion rate while operating from a single 5-V power supply     

2Gbps GaAs单片4bit数模转换器的设计与实现

详述了单片超高速2G bps G aA s 4b it数模转换器(DAC)的设计、制造及测试。在南京电子器件研究所标准76 mm G aA s工艺线采用0.5μm全离子注入M ESFET工艺完成流片。芯入输入输出阻抗实现在片50Ω匹配。4 b it DAC的微分非线性(DN L)为±0.22最低有效位(LSB),积分非线性(IN L)为±0.45LSB,达到5.2 b it的转换精度。该单片电路提供差分互补输出,长周期输出特性无漂移。其最高转换速率可达2 G bps,建立时间小于250 ps,电路核心部分功耗为110 mW。     

一种用于电流舵DAC的开关顺序优化技术

提出了一种用于电流舵DAC的开关顺序优化技术。首先,将高位电流源阵列拆分成四个部分并位于四个象限中,在每个象限中采用开关顺序优化技术消除电流源阵列由PVT变化而带来的二阶梯度幅值误差;其次,对开关顺序优化后的电流源阵列根据幅值变化进行排序并重组,形成最终的电流源及开关顺序,消除了一阶梯度幅值误差和其他残余误差。与常规开关顺序优化技术相比,该技术能更有效地降低幅值误差,提高了DAC的静态性能。为了验证提出的开关顺序优化技术,基于40 nm CMOS工艺制作了一个12位200 MS/s采样频率的电流舵DAC。测试结果表明,实施开关顺序优化技术的DAC的INL、DNL分别从0.63 LSB、0.37 LSB降低到0.54 LSB、0.25 LSB。     

A high-performance CMOS 70-MHz palette/DAC

A VLSI circuit has been developed that combines dual-ported RAMs and three high-speed 8-b digital-to-analog converters (DACs). It is known as a palette/DAC. A 6-2 segmented DAC architecture improves differential linearity and monotonicity. The current-source cell uses a cascode device to improve the DAC's linearity. A reference current, set by an on-chip bandgap reference voltage generator, and its associated distribution scheme eliminate the negative effects of threshold mismatches between current source cells, supply line resistance, and noise. The maximum conversion rate is 70 MHz with typical DC differential nonlinearity of 0.48 LSB (least significant bit). The 253-mil/SUP 2/ is designed on a double-metal CMOS process and consumes 1.2 W of power.