Dielectric stability in the relaxor: Na0.5Bi0.5TiO3-Ba0.8Ca0.2TiO3-Bi(Mg0.5Ti0.5)O3- NaNbO3 ceramic system

Ceramics with temperature-stable dielectric characteristics have been developed in the system: 0.6[0.85Na_0.5Bi_0.5TiO₃-(0.15-x)Ba_0.8Ca_0.2TiO₃-xBi(Mg_0.5Ti_0.5)O₃]?0.4NaNbO₃, x ≤ 0.15. Dielectric measurements exhibited relaxor ferroelectric characteristics with temperature-stable relative permittivity from ε_r~1330 ± 15% in the temperature range from ?70?°C to 215?°C and tanδ ≤ 0.02 from ?20?°C to 380?°C for x = 0 compositions. For the Bi(Mg_0.5Ti_0.5)O₃ modified compositions the temperature range of stable relative permittivity extended from ?70?°C to 400?°C, with ε_r ~ 950 ± 15% and tanδ ≤ 0.02 from ?70?°C to 260?°C. Values of dc resistivity were ~ 10⁸ Ω?m at a temperature of 300?°C and the corresponding RC constant values were in the range from 0.40 ? 0.78?s at 300?°C. All ceramic samples exhibited a linear polarisation-electric field response at maximum applied electric field of 5?kV/cm (1?kHz).     

Temperature-insensitive dielectric and piezoelectric properties in (1-x)K0.5Na0.5Nb0.997Cu0.0075O3-xSrZrO3 ceramics

Systematic investigation on phase transition, dielectric and piezoelectric properties of (1-x)K_0.5Na_0.5Nb_0.997Cu_0.0075O₃-xSrZrO₃ (x = 0, 0.03, 0.06, 0.09, 0.12, 0.15, abbreviated as KNNC-100xSZ) ceramics was carried out. Due to the coexistence of orthorhombic and tetragonal phase in a wide temperature range, a diffused polymorphic phase transition (PPT) region was achieved in KNNC with x ≥ 0.06. KNNC-12SZ ceramics exhibited high dielectric permittivity (∼1679), low dielectric loss (∼0.02) and small variation (Δe'/ε'_25 °C ≤ 15%) in dielectric permittivity from −78 °C to 237.3 °C. KNNC-6SZ ceramic possessed a high level of unipolar strain (∼0.15%) and maintained a smaller variation of ±12% under the corresponding electric field of 60 kV cm⁻¹ at 10 Hz from 25 °C to 175 °C. d₃₃^*, which was calculated according to the unipolar strain at 60 kV cm⁻¹, was 230 pm V⁻¹ and remained stable below 100 °C. Therefore, our work provided a new promising candidate for temperature-insensitive capacitors and piezoelectric actuators.     

High-energy storage performance in lead-free (1-x)BaTiO3-xBi(Zn0.5Ti0.5)O3 relaxor ceramics for temperature stability applications

In this paper, we prepared lead-free (1-x)BaTiO₃-xBi(Zn_0.5Ti_0.5)O₃ (x=0.04, 0.08, 0.10, and 0.14) ceramics by a conventional solid-state reaction technique. Pure perovskite structures and dense microstructures were demonstrated for all the compositions. Interestingly, it was found that the sintering temperature tended to decrease with increasing the Bi(Zn_0.5Ti_0.5)O₃ content. It should be stressed that a low sintering temperature of 1050 °C was utilized for the composition of x=0.14. Moreover, the dielectric permittivity-temperature curve became more flat and the relaxor degree became stronger with the augment in Bi(Zn_0.5Ti_0.5)O₃ content. We also conducted a detailed study on the energy storage performance for all the compositions from 25 °C to 180 °C.We found that relatively temperature-stable energy storage performance could be obtained in the compositions with x=0.08, 0.10 and 0.14 regardless of the evolution of dielectric constant during the test temperature range. In particular, due to a higher field of 12 MV m⁻¹, the discharge energy storage densities of x=0.14 could reach 0.81 J cm⁻³, 0.80 J cm⁻³, 0.78 J cm⁻³, 0.72 J cm⁻³, and 0.67 J cm⁻³ with high efficiencies of 94%, 92%, 94%, 88% and 77% at 25 °C, 50 °C, 100 °C, 150 °C, and 180 °C, respectively. All these results demonstrate the (1-x)BaTiO₃-xBi(Zn_0.5Ti_0.5)O₃ ceramics are quite promising for temperature-stable energy storage applications.     

High performance lead-free piezoelectric 0.96(K0.48Na0.52)NbO3-0.03[Bi0.5(Na0.7K0.2Li0.1)0.5]ZrO3-0.01(Bi0.5Na0.5)TiO3 single crystals grown by solid state crystal growth and their phase relations

0.96(K_0.48Na_0.52)NbO₃-0.03[Bi_0.5(Na_0.7K_0.2Li_0.1)_0.5]ZrO₃-0.01(Bi_0.5Na_0.5)TiO₃ single crystals were grown for the first time by the solid state crystal growth method, using [001] or [110]-oriented KTaO₃ seed crystals. The grown single crystal shows a dielectric constant of 2720 and polarization-electric field loops of a lossy normal ferroelectric, with P_r = 45 μC/cm² and E_c = 14.9 kV/cm, while the polycrystalline samples with a dielectric constant of 828 were too leaky for P-E measurement due to humidity effects. The single crystal has orthorhombic symmetry at room temperature. Dielectric permittivity peaks at 26 °C and 311 °C, respectively, are attributed to rhombohedral-orthorhombic and tetragonal–cubic phase transitions. Additionally, Raman scattering shows the presence of an orthorhombic-tetragonal phase transition at ∼150 °C, which is not indicated in the permittivity curves but by the loss tangent anomalies. A transition around 700 °C in the high temperature dc conductivity is suggested to be a ferroelastic-paraelastic transition.     

Dielectric Properties of Ba0.8Ca0.2TiO3–Bi(Mg0.5,Ti0.5)O3–NaNbO3 Ceramics

Ceramics in the system 0.45Ba_0.8Ca_0.2TiO₃–(0.55?x)Bi(Mg_0.5Ti_0.5)O₃–xNaNbO₃, x = 0–0.02 were fabricated by a conventional solid‐state reaction route. X‐ray powder diffraction indicated cubic or pseudocubic symmetry for all samples. The parent 0.45Ba_0.8Ca_0.2TiO₃–0.55Bi(Mg_0.5Ti_0.5)O₃ composition is a relaxor dielectric with a near‐stable temperature coefficient of relative permittivity, ε_r = 950 ± 10% across the temperature range 80°C–600°C. Incorporation of NaNbO₃ at x = 0.2 extends the lower working temperature to ≤25°C, with ε_r = 575% ± 15% from temperatures ≤25°C to >400°C, and tan δ < 0.025 from 25°C to 400°C. Values of dc resistivity ranged from ~10⁹ Ω·m at 250°C to ~10⁶ Ω·m at 500°C. The properties suggest that this material may be of interest for high‐temperature capacitor applications.     

Dielectric and ferroelectric properties of (1 − x)BaTiO3–xBi0.5Na0.5TiO3 ceramics

Lead-free (1 − x)BaTiO₃–xBi_0.5Na_0.5TiO₃ (x = 0.01, 0.02, 0.05, 0.1, 0.2, 0.3) ferroelectric ceramics were fabricated by the conventional ceramic technique. Sintering was made at 1200 °C for 2–4 h in air atmosphere. The crystal structure was investigated by X-ray diffraction. The dielectric and ferroelectric properties were also studied. Room temperature permittivity was found to decrease as Bi_0.5Na_0.5TiO₃ (BNT) content increases. Only the sample with 0.3 mol BNT was found to have relaxor behaviour. The T_c shifted slightly only for BNT addition lower than 0.1 mol. The highest T_c (about 150 °C) was obtained for 0.2 mol BNT addition. The remanent polarization, P_r, decreases whereas the coercive field, E_c, increases monotonously as the BNT content increases.     

Order–disorder behaviour in 0.9Ba([Zn0.60Co0.40]1/3Nb2/3)O3–0.1Ba(Ga0.5Ta0.5)O3 microwave dielectric resonators

0.9Ba([Zn_0.60Co_0.40]_1/3Nb_2/3)O₃–0.1Ba(Ga_0.5Ta_0.5)O₃ (BCZN–BGT) ceramic resonators (quality factor, Q=32,000 at the rate of 3.05 GHz, relative permittivity, ε_r=35 and temperature coefficient of the resonant, τ_f=0) have been fabricated which are suitable in terms of cost and performance for base stations supporting third generation architecture. The new compounds are perovskite structured (a=4.09 Å) but exhibit no superlattice reflections at any heat treatment temperature according to X-ray diffraction (XRD). However, annealing and quenching of samples followed by transmission electron microscopy and Raman spectroscopy revealed an order–disorder phase transition at ∼1200 °C. Annealing below this temperature (1100 °C) gave rise to discrete ±1/3{h k l}_p and diffuse 1/2{h k l}_p superlattice reflections in the same 〈1 1 0〉_p zone axis electron diffraction patterns and the presence of F_2g and A_1g modes in Raman spectra. It is proposed that ±1/3{h k l}_p reflections result from 1:2 long-range ordered domains of BCZN whereas the diffuse 1/2{h k l}_p reflections arise from short range fcc ordered BGT rich regions at the 1:2 domain boundaries. A short-range ordered fcc superlattice was observed in samples quenched from above the order–disorder phase transition (>1200 °C) which was accompanied by the presence of only the A_1g mode in Raman spectra.     

Microstructure and dielectric characteristics of Nb2O5 doped BaTiO3-Bi(Znl/2Til/2)O3 ceramics for capacitor applications

The effects of Nb₂O₅ addition on the dielectric properties and phase formation of 0.8BaTiO₃-0.2Bi(Zn_l/2Ti_l/2)O₃ (0.8BT-0.2BZT) ceramics were investigated. The desired perovskite phase was achieved with Nb₂O₅ doping levels being in the range of 0.5 wt.%–3.0 wt.%. The 0.8BT-0.2BZT ceramics doped with 1.5 wt.% Nb₂O₅ was found to possess a moderate dielectric constant (ε = 1170) and low dielectric loss (tanδ = 1%) at room temperature and 1 kHz frequency, showing a flat dielectric behavior over the temperature range of −55 °C–200 °C. Based on this composition, the X9R-MLCC (multilayer ceramic capacitor) with Ag0.7-Pd0.3 electrode was sintered at 1060 °C. The optimized capacitance of the MLCC is 26.5 nF, with dielectric loss tanδ of 0.9% and electrical resistance of 4.50 × 10¹¹ Ω at room temperature, leading to a high time constant of 11,900 s, decreasing to 175 s at 200 °C, being one order higher than those of commercial X7R MLCC. In addition, the equivalent series resistance (ESR) was found to be on the order of 0.2 mΩ at 2 MHz, much lower than that of the DC Bus Capacitor Bank for the automotive inverters (where the desired characteristic is <3 mΩ). All these characteristics of the newly developed MLCC will benefit the high temperature and high power capacitor applications.     

Microwave sintered Bi0.90La0.10Fe0.95Mn0.05O3 nanocrystalline ceramics: Impedance and modulus spectroscopy

Multiferroic Bi_0.90La_0.10Fe_0.95Mn_0.05O₃ (BLFMO) nanoceramics were synthesized by PVA sol-gel method, followed by microwave sintering. The structural, microstructural and electrical properties of BLFMO were investigated. The crystal symmetry and unit cell dimensions were determined from the experimental data using Rietveld analysis. BLFMO revealed only one electroactive region as verified from impedance and modulus spectroscopy. Overlapping large polaron tunneling transport mechanism was observed from AC conductivity analysis. Conduction below 250 °C (−30 °C≤T≤250 °C) was attributed to translational hopping while above 250 °C (250 °C≤T≤350 °C) corresponds to electron hopping between charge defects. The relative permittivity varies from 66 to 203 at 1 kHz over the measured temperature range (−150 °C≤T≤350 °C). The electrical conductivity of the microwave sintered BLFMO has been discussed based on defect reaction with Mn doping. The measured DC conductivity in the range of 10⁻¹³ S/cm at −130 °C to 10⁻⁴ S/cm at 350 °C revealed the insulating behavior of the sample. At room temperature, the DC resistivity of the sample was over ~50 MΩ cm. The stretching constant (β) obtained from KWW (Kohlrausch-Williams-Watts) equation indicates that the sample inclined towards ideal Debye behavior as the temperature increases.     

Dielectric and piezoelectric properties of lead-free (K0.44Na0.46)NbO3-0.5%MnO2 single crystals grown by the TSSG method

Lead-free (K_0.44Na_0.46)NbO₃-0.5%MnO₂ (KNN-0.5%MnO₂) single crystals with dimensions of Ф30×10 mm were successfully grown by a top seeded solution growth technique (TSSG). The X-ray diffraction pattern has shown that the as-grown crystals have an orthorhombic perovskite structure. The orthorhombic-tetragonal (T_O-T) and tetragonal-cubic phase transition temperature (the Curie temperature T_C) of the single crystal were found at 184 °C and 412 °C, respectively. The KNN-0.5%MnO₂ single crystals exhibited high piezoelectric constants d₃₃ and dielectric permittivity ε_r, being 261 pC/N and 275. Well saturated P-E hysteresis loop with remnant polarization P_r=22.06 µC/cm² and coercive field E_c=17.93 kV/cm was obtained at a maximum electric field of 3 kV/mm. A high strain (0.24%) and electromechanical coupling coefficient K_t (65.9%) were obtained along the (001) orientation. These excellent results indicated that the KNN-0.5%MnO₂ single crystals could be used as high quality lead-free material.     

Temperature-stable dielectric ceramics based on Na0.5Bi0.5TiO3

Multiple ion substitutions to Na_0.5Bi_0.5TiO₃ give rise to favourable dielectric properties over the technologically important temperature range ?55?°C to 300?°C. A relative permittivity, ε_r,?=?1300?±?15% was recorded, with low loss tangent, tanδ?≤?0.025, for temperatures from 310?°C to 0?°C, tanδ increasing to 0.05 at ?55?°C (1?kHz) in the targeted solid solution (1–x)[0.85Na_0.5Bi_0.5TiO₃–0.15Ba_0.8Ca_0.2Ti_1-yZr_yO₃]–xNaNbO₃: x?=?0.3, y?=?0.2. The ε_r-T plots for NaNbO₃ contents x?<?0.2 exhibited a frequency-dependent inflection below the temperature of a broad dielectric peak. Higher levels of niobate substitution resulted in a single peak with frequency dispersion, typical of a normal relaxor ferroelectric. Experimental trends in properties suggest that the dielectric inflection is the true relaxor dielectric peak and appears as an inflection due to overlap with an independent broad dielectric peak. Process-related cation and oxygen vacancies and their possible contributions to dielectric properties are discussed.     

Phase transition and electrical properties of Bi0.5(Na0.8K0.2)0.5ZrO3 modified (K0.52Na0.48)(Nb0.95Sb0.05)O3 lead-free piezoelectric ceramics

In this work, (1−x)(K_0.52Na_0.48)Nb_0.95Sb_0.05O₃−xBi_0.5(Na_0.8K_0.2)_0.5ZrO₃ [abbreviated as (1−x)KNNS−xBNKZ, x=0–0.06] lead-free ceramics were fabricated using solid-state reaction method. The effects of BNKZ contents on the phase structure, piezoelectric and ferroelectric properties were investigated. The phase boundaries including orthorhombic-tetragonal (O-T) and rhombohedral-tetragonal (R-T) multiphase coexistence were identified by XRD patterns and temperature-dependent dielectric constant by adding different content of BNKZ. A giant field induced strain (~0.25%) along with converse piezoelectric coefficient d₃₃^* (~629.4 pm/V) and enhanced ferroelectricity P_r (~38 μC/cm²) were obtained when x=0.02, while the specimen with x=0.03 presented the optimal piezoelectric coefficient d₃₃ of 215 pC/N, due to the O-T or R-T phase coexistence near room temperature respectively. These results show that the introduction of Bi_0.5(Na_0.8K_0.2)_0.5ZrO₃ is a very effective way to improve the electrical properties of (K_0.52Na_0.48)(Nb_0.95Sb_0.05)O₃ lead-free piezoelectric ceramics.     

An effective optimization strategy and analysis for BaTiO3–Na0.5Bi0.5TiO3 system with colossal permittivity

Colossal permittivity (CP, ε＞10⁴) behavior in BaTiO₃–Na_0.5Bi_0.5TiO₃ (BT-NBT) ceramics has been studied, which showed extremely high permittivity up to ~10⁵. Dielectric properties of samples showed Debye-like relaxations in the frequency range 20 Hz–30 MHz. Two different polarizations located in grain boundaries and grains respectively are responsible for the CP behavior and the models of defect charge compensation achieved by niobium doping are proposed to explain the phenomenon of abnormal variation of dielectric constant.By using defect engineering, a Nb-doped BaTiO₃ ceramics with stable colossal permittivity (ε_r =1.3×10⁴ at 1 kHz and room temperature),high bulk resistivity (>10¹⁰ Ω·cm) as well as relative low dielectric loss (tanδ~0.06) has been obtained over a wide temperature range of −55–150 °C, satisfying IEA X8R specification, which has a potential application prospect in high capacity solid supercapacitor.     

Processing and enhanced electrical properties of Sr1-x(K0.5Bi0.5)xBi2Nb2O9 lead-free piezoelectric ceramics

Lead-free piezoelectric ceramics, Sr_1−x(K_0.5Bi_0.5)_xBi₂Nb₂O₉ (SKBN-x, x=0, 0.2, 0.5, 1.0), were synthesized by a conventional solid-state reaction. Structural and electrical properties of SKBN-x ceramics were investigated. X-ray diffraction analysis suggested that the substitution led to the formation of a layered perovskite structure. Plate-like morphologies for the grains were clearly observed in all the samples, which are characteristic for layer-structure Aurivillius compounds. The Curie temperature (T_c) is found to shift to higher temperature from 445 °C to 509 °C with increasing (K, Bi) content. Excellent remanent polarization (2P_r∼15 μC/cm²) were obtained for SKBN-0.2 ceramic. High piezoelectric coefficient of d₃₃∼21  pC/N were obtained for the samples at x=0.5. Additionally, thermal annealing studies indicated that the piezoelectric coefficient (d₃₃) of SKBN-0.5 was unchanged even if annealing temperature increased to be 450 °C, demonstrating the ceramics are the promising candidates for high-temperature applications.     

Temperature-independent permittivity of xBaTiO3–(1−x)(0.5Bi(Mg1/2Ti1/2)O3–0.5BiScO3) ceramics

xBaTiO₃–(1−x)(0.5Bi(Mg_1/2Ti_1/2)O₃-0.5BiScO₃) or xBT–(1−x)(0.5BMT–0.5BS) (x=0.45–0.60) ceramics were prepared by using the conventional mixed oxide method. Perovskite structure with pseudo-cubic symmetry was observed in all the compositions. Dielectric measurement results indicated that all the samples showed dielectric relaxation behavior. As the content BaTiO₃ was decreased from 0.60 to 0.45, temperature coefficient of permittivity (TCε) in the range of 200–400 °C was improved from −706 to −152 ppm/°C, while the permittivity at 400 °C was increased from 1208 to 1613. The temperature stability of permittivity was further improved by using 2 mol% Ba-deficiency. It was found that lattice parameter and grain size of the 2 mol% Ba-deficient ceramics were smaller than those of their corresponding stoichiometric (S) counterparts, with TCε in the range of 200–400 °C to be improved noticeably. For example, TCε of the Ba-deficiency sample with x=0.45 was −75 ppm/°C in the temperature range of 200–400 °C and the permittivity was 1567 at 400 °C. The results obtained in this work indicated that xBT–(1−x)(0.5BMT–0.5BS) ceramics are very promising candidates for high temperature capacitor applications.     

Investigations of BaFe0.5Nb0.5O3 nano powders prepared by a low temperature aqueous synthesis and resulting ceramics

A facile method to prepare nanoscaled BaFe_0.5Nb_0.5O₃ via synthesis in boiling NaOH solution is described herein. The nano-crystalline powder has a high specific surface area of 55 m² g⁻¹ and a crystallite size of 15 nm. The as-prepared powder does not show any significant crystallite growth up to 700 °C. The activation energy of the crystallite growth process was calculated as 590 kJ mol⁻¹. Dense ceramics can be obtained either after sintering at 1200 °C for 1 h or after two-step sintering at 1000 °C for 10 h. The average grain sizes of ceramic bodies can be tuned between 0.23 μm and 12 μm. The thermal expansion coefficient was determined as 11.4(3)·10⁻⁶ K⁻¹. The optical band gap varies between 2.90(5) and 2.63(3) eV. Magnetic measurements gave a Néel temperature of 20 K. Depending on the sintering regime, the ceramic samples reach permittivity values between 2800 and 137,000 at RT and 1 kHz.     

Effect of Nd-doping on structural,thermal and electrochemical properties of LaFe0.5Cr0.5O3 perovskites

The structural, thermal and electrochemical properties of the perovskite-type compound La_1−xNd_xFe_0.5Cr_0.5O₃ (x=0.10, 0.15, 0.20) are investigated by X-ray diffraction, thermal expansion, thermal diffusion, thermal conductivity and impedance spectroscopy measurements. Rietveld refinement shows that the compounds crystallize with orthorhombic symmetry in the space group Pbnm. The average thermal expansion coefficient decreases as the content of Nd increases. The average coefficient of thermal expansion in the temperature range of 30–850 °C is 10.12×10⁻⁶, 9.48×10⁻⁶ and 7.51×10⁻⁶ °C⁻¹ for samples with x=0.1, 0.15 and 0.2, respectively. Thermogravimetric analyses show small weight gain at high temperatures which correspond to filling up of oxygen vacancies as well as the valence change of the transition metals. The electrical conductivity measured by four-probe method shows that the conductivity increases with the content of Nd; the electrical conductivity at 520 °C is about 4.71×10⁻³, 6.59×10⁻³ and 9.62×10⁻³ S cm⁻¹ for samples with x=0.10, 0.15 and 0.20, respectively. The thermal diffusivity of the samples decreases monotonically as temperature increases. At 600 °C, the thermal diffusivity is 0.00425, 0.00455 and 0.00485 cm² s⁻¹ for samples with x=0.10, 0.15 and 0.20, respectively. Impedance measurements in symmetrical cell arrangement in air reveal that the polarization resistance decreases from 55 Ω cm⁻² to 22.5 Ω cm⁻² for increasing temperature from 800 °C to 900 °C, respectively.     

Phase formation and dielectric properties of Ln2(Ln′0.5Nb0.5)2O7 (Ln = rare earth element)

Weberites and pyrochlores (A₂B₂O₇), both fluorite-related superstructures, are attractive dielectric ceramics due to their ability to accommodate diverse cations, thus allowing their properties to be tailored. This study focuses on the fundamental understanding of the structure–dielectric property relationships in fluorite-related oxides. Specifically, Ln₃NbO₇ and Ln₂(Ln′_0.5Nb_0.5)₂O₇ (where the ionic radius of Ln′ is smaller than that of Ln) compounds are investigated. It has been previously shown that weberite-type Ln₃NbO₇ exhibits a composition dependent dielectric relaxation above room temperature. It is here shown that a dielectric relaxation also occurs in La₂(Ln′_0.5Nb_0.5)₂O₇ (Ln′ = Yb³⁺, Er³⁺, and Dy³⁺) compounds near or below ?158 °C. The temperature, at which the maximum permittivity occurs, is different for different compositions (?132 °C for La₂(Yb_0.5Nb_0.5)₂O₇, ?197 °C for La₂(Er_0.5Nb_0.5)₂O₇, and ?187 °C for La₂(Dy_0.5Nb_0.5)₂O₇ at 1 MHz) and is correlated with the distortion of the NbO₆ octahedra. The room temperature dielectric permittivity of all three compounds was measured to be between 40 and 50 at 1 MHz.     

Microwave dielectric properties of Ca(Li1/4Nb3/4)O3–CaTiO3 ceramic systems

The microwave dielectric properties of Ca(Li_1/4Nb_3/4)O₃–CaTiO₃ ceramics have been investigated with regard to calcination temperature and the amount of CaTiO₃ additive. Ca(Li_1/4Nb_3/4)O₃ ceramics with an orthorhombic crystal structure can be synthesized by the conventional mixed oxide method by calcining at 750 °C and sintering at 1275 °C. The dielectric constant (ɛ_r), quality factor (Q × f₀) and temperature coefficient of resonant frequency (τ_f) for Ca(Li_1/4Nb_3/4)O₃ ceramics are 26, 13,000 GHz and −49 ± 2 ppm/°C, respectively. With increase in the CaTiO₃ content, ɛ_r and τ_f are increased and the quality factor decreased due to the solid-solution formation between Ca(Li_1/4Nb_3/4)O₃ and CaTiO₃. The 0.7Ca(Li_1/4Nb_3/4)O₃–0.3CaTiO₃ ceramic exhibits ɛ_r of 44, quality factor (Q × f₀) of 12,000 GHz and τ_f of −9 ± 1 ppm/°C.     

Temperature‐Stable Relative Permittivity from −70°C to 500°C in (Ba0.8Ca0.2)TiO3–Bi(Mg0.5Ti0.5)O3–NaNbO3 Ceramics

Temperature‐stable relaxor dielectrics have been developed in the solid solution system: 0.45Ba_0.8Ca_0.2TiO₃–(0.55 ? x)Bi(Mg_0.5Ti_0.5)O₃–xNaNbO₃. Ceramics of composition x = 0 have a relative permittivity ?_r = 950 ± 15% over a wide temperature range from +70°C to 600°C. Modification with NaNbO₃ at x = 0.2 decreases the lower limiting temperature to ?70°C, but also decreases relative permittivity such that ?_r ~ 600 ± 15% over the temperature range ?70°C to 500°C. For composition x = 0.3, the low‐temperature dispersion in loss tangent, tan δ, (at 1 kHz) shifts to lower temperature, giving tan δ values ≤0.02 across the temperature range ?60°C to 300°C in combination with ?_r ~ 550 ± 15%. Values of dc resistivity for all samples are of the order of 10¹⁰ Ω m at 250°C and 10⁷ Ω m at 400°C.