Solution-processed ytterbium oxide dielectrics for low-voltage thin-film transistors and inverters

High permittivity (high k) metal-oxide thin films fabricated via solution processes have recently received much attention for the construction of low-operating voltage and high-performance thin-film transistors (TFTs). In this report, amorphous ytterbium oxide (Yb₂O₃) thin films were fabricated by spin coating and their applications in TFTs were explored. The physical properties of the solution-processed Yb₂O₃ thin films processed at different annealing temperatures were systematically investigated using various characterization techniques. To explore the feasibility of the Yb₂O₃ thin films as gate dielectrics for oxide TFTs, In₂O₃ TFTs based on Yb₂O₃ dielectrics were integrated. All the devices could be operated at 3 V, which is critical for the applications in portable, battery-driven, and low-power electronic devices. The optimized In₂O₃/Yb₂O₃ TFT exhibits high electrical performances, including field-effect mobility of 4.98 cm²/V s, on/off current ratio of ~ 10⁶, turn-on voltage around 0 V, and subthreshold swing of 70 mV/decade, respectively. To demonstrate the potential of In₂O₃/Yb₂O₃ TFT toward more complex logic application, the unipolar inverter was further constructed.     

Strontium doping effects on the characteristics of solution-processed aluminum oxide dielectric layer and its application to low-voltage-operated indium-gallium-zinc-oxide thin-film transistors

In this paper, we investigated the strontium doping effects on the electrical and physical characteristics of solution-processed aluminum oxide dielectric layer and its application to low-voltage-operated indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). With an optimized doping concentration of strontium (5 at%) in aluminum oxide (Al₂O₃), an oxide gate dielectric layer having a dielectric constant of ~7 and low leakage current characteristics (~4 × 10⁻⁷ A/cm² at 3 MV/cm) could be achieved by a solution process, which are comparably better than those of pristine Al₂O₃ film. The enhanced dielectric properties from strontium doping can be attributed to the change in the physical properties of Al₂O₃ film incorporated with strontium, providing charge relaxation of defect states in Al₂O₃ film. Also, since the strontium is highly reactive with oxygen, the strontium substitution through a doping leads to more strongly bound structure in an Al₂O₃ film without considerable lattice distortion. Using the strontium-doped aluminum oxide film as a gate dielectric layer, having a thickness less than 10 nm, solution-processed IGZO TFTs operating at ≤ 1 V were demonstrated showing a field-effect mobility of 1.74 ± 1.10 cm²/V s and an on-current level of ~10⁻⁵ A.     

A new sol-gel route to prepare dense Al2O3 thin films

Anew sol-gel route has been applied to synthetize dense Al₂O₃thin films from aluminum isopropoxide (Al(OPri)₃)as raw precursor material. The results show that, in the solution, acetylacetone (AcAc) and aluminum form a complex compound which effectively suppresses the growth of colloidal particles and makes the sol very stable. Al₂O₃thin films fabricated by spin-coating method and calcined at 500 °C for 3 h possess an amorphous structure and exhibit a highly homogeneous surface texture without evidence of holes or cracks throughout the film. Moreover, the prepared films display a low leakage current and a high transmittance. This new sol-gel route appears to be a highly promising method to synthetize dense Al₂O₃ thin films from Al(OPrⁱ)₃, and could provide a wide range of optical and electric applications.     

Inkjet-printed thin film radio-frequency capacitors based on sol-gel derived alumina dielectric ink

There has been significant interest in printing radio frequency passives, however the dissipation factor of printed dielectric materials has limited the quality factor achievable. Al₂O₃ is one of the best and widely implemented dielectrics for RF passive electronics. The ability to spatially pattern high quality Al₂O₃ thin films using, for example, inkjet printing would tremendously simplify the incumbent fabrication processes – significantly reducing cost and allowing for the development of large area electronics. To-date, particle based Al₂O₃ inks have been explored as dielectrics, although several drawbacks including nozzle clogging and grain boundary formation in the films hinder progress. In this work, a particle free Al₂O₃ ink is developed and demonstrated in RF capacitors. Fluid and jetting properties are explored, along with control of ink spreading and coffee ring suppression. The liquid ink is heated to 400 °C decomposing to smooth Al₂O₃ films ~120 nm thick, with roughness of <2 nm. Metal-insulator-metal capacitors, show high capacitance density >450 pF/mm², and quality factors of ~200. The devices have high break down voltages, >25 V, with extremely low leakage currents, <2×10⁻⁹ A/cm² at 1 MV/cm. The capacitors compare well with similar Al₂O₃ devices fabricated by atomic layer deposition.     

Leakage current and dielectric breakdown in lanthanum doped amorphous aluminum oxide films prepared by sol–gel

Dielectric Al_2−2xLa_2xO₃ (x=0.00, 0.005, 0.02, 0.05, and 0.10) thin films were fabricated on Pt/Ti/SiO₂/Si substrates by sol–gel spin coating. The surface morphology of Al_2−2xLa_2xO₃ thin film was observed by field emission scanning electron microscopy. The chemical state of the lanthanum in aluminum oxide films was analyzed using X-ray photoelectron spectroscopy (XPS), indicating that lanthanum reacts with absorbed water to form lanthanum hydroxide. J–E measurements were used to investigate the current conduction mechanism and breakdown behavior. The results show that La doping changes the conduction mechanism and makes influences on leakage current. The dominating conduction process of 10% La doped Al₂O₃ films turns into the space charge limited current (SCLC) mechanism in the field region ranging from 25 to 150 MV/m. The leakage current of the films with 10% La doping decreases by three orders of magnitude from 10⁻⁶ to 10⁻⁹ at the electric field of 25 MV/m. The breakdown strength increases with the increasing content of lanthanum.     

Porous Fe2O3 nanorods anchored on nitrogen-doped graphenes and ultrathin Al2O3 coating by atomic layer deposition for long-lived lithium ion battery anode

Porous iron oxide (Fe₂O₃) nanorods anchored on nitrogen-doped graphene sheets (NGr) were synthesized by a one-step hydrothermal route. After a simple microwave treatment, the iron oxide and graphene composite (NGr-I-M) exhibits excellent electrochemical performances as an anode for lithium ion battery (LIB). A high reversible capacity of 1016 mAh g⁻¹ can be reached at 0.1 A g⁻¹. When NGr-I-M electrode was further coated by 2 ALD cycles of ultrathin Al₂O₃ film, the first cycle Coulombic efficiency (CE), rate performance and cycling stability of the coated electrode can be greatly improved. A stable capacity of 508 mAh g⁻¹ can be achieved at 2 A g⁻¹ for 200 cycles, and an impressive capacity of 249 mAh g⁻¹ at 20 A g⁻¹ can be maintained without capacity fading for 2000 cycles. The excellent electrochemical performance can be attributed to the synergy of porous iron oxide structures, nitrogen-doped graphene framework, and ultrathin Al₂O₃ film coating. These results highlight the importance of a rational design of electrode materials improving ionic and electron transports, and potential of using ALD ultrathin coatings to mitigate capacity fading for ultrafast and long-life battery electrodes.     

Preparation of Al2O3–ZrO2 nanocomposite films by laser chemical vapour deposition

Alumina (Al₂O₃)–zirconia (ZrO₂) nanocomposite films were prepared by laser chemical vapour deposition. α-Al₂O₃–ZrO₂ and γ-Al₂O₃–t-ZrO₂ nanocomposite films were prepared at 1207 and 1000 K, respectively. In the nanocomposite films, 10-nm-wide t-ZrO₂ nanodendrites grew inside the α- or γ-Al₂O₃ columnar grains. The γ-Al₂O₃–t-ZrO₂ nanocomposite films exhibited high nanoindentation hardness (28.0 GPa) and heat insulation efficiency (4788 J s^−1/2 m⁻² K⁻¹).     

Anode-supported SOFCs based on Sm0.2Ce0.8O2−δ electrolyte thin-films fabricated by co-pressing using microwave combustion synthesized powders

Decreasing the electrolyte thickness is an effective approach to improve solid oxide fuel cells (SOFCs) performance for intermediate-temperature applications. Sm_0.2Ce_0.8O_2−δ (SDC) powders with low apparent density of 32±0.3 mg cm⁻³ are synthesized by microwave combustion method, and SDC electrolyte films as thin as ~10 μm are fabricated by co-pressing the powders onto a porous NiO–SDC anode substrate. Dense SDC electrolyte thin films with grain size of 300–800 nm are achieved at a low co-firing temperature of 1200 °C. Single cells based on SDC thin films show peak power densities of 0.86 W cm⁻² at 650 °C using 3 vol% humidified H₂ as fuel and ambient air as oxidant. Both the thin thickness of electrolyte films and ultra-fine grained anode structure make contributions to the improved cell performance.     

Synthesis of In2O3 porous nanoplates for photocatalytic decomposition of perfluorooctanoic acid (PFOA)

Indium oxide (In₂O₃) porous nanoplates (PNPs) were synthesized by an ethylenediamine-assisted hydrothermal process followed by calcination at 270 °C. Compared with In₂O₃ non-porous nanoplates (NPs) obtained at higher temperature (500 °C), PNPs possessed a high value of specific surface area (156.9 m² g^− 1) and a meso-microporous structure. As-synthesized In₂O₃ PNPs showed a superior activity for photocatalytic decomposition of an emerging persistent organic pollutant-perfluorooctanoic acid (PFOA), the decomposition half-life of PFOA was shortened to 4.4 min.     

Structural,electrical and optical properties of stoichiometric In2Te3 thin films

In₂Te₃ thin films were grown by thermal evaporation technique. The annealing of films played a major role to obtain stoichiometry, regardless of substrate temperature. Annealing at 300 ⁰C resulted in well oriented, mono-phased and nearly stoichiometric In₂Te₃ thin films. The variation in grain size of In₂Te₃ films associated with the substrate temperatures provides a significant control over the resistivity of the films, and the resistivity decreased with an increase in the grain size. The activation energy and optical band gap of stoichiometric In₂Te₃ films were found to be 0.01±0.005 eV and 0.99±0.02 eV, respectively. The absorption co-efficient of these films was found to be of the order of 10⁵ cm⁻¹.     

Heat transport enhancement of thermal energy storage material using graphene/ceramic composites

Graphene/ceramic composites are proposed by directly depositing graphene on the insulating Al₂O₃ particles by chemical vapor deposition without any metal catalysts. Carbothermic reduction occurring at the Al₂O₃ surface is vital during the initial stage of graphene nucleation and the graphene sheet can connect with neighboring sheets to completely cover Al₂O₃ particles. The quality and layer number of graphene on Al₂O₃ can be finely tailored by changing the growth temperature and gas ratio. Graphene coated Al₂O₃ (G-Al₂O₃) composites are used as effective fillers of stearic acid (SA) to increase the thermal transport property. By the optimization of the layer number of graphene, size of Al₂O₃ particles and ratio of G-Al₂O₃/SA in a quantitative, their thermal conductivities significantly increase up to 11 folds from 0.15 to 1.65 W m⁻¹ K⁻¹. The great improvement is attributed to the high thermal transfer performance of graphene and excellent wettability between graphene and SA. When the G-Al₂O₃/SA composites with the graphene coated porous Al₂O₃ foam, the thermal conductivity further reaches to 2.39 W m⁻¹ K⁻¹, and the corresponding latent heat is 38 J g⁻¹. It demonstrates the potential applications of graphene in thermal transport and thermal energy storage devices.     

Effect of Al2O3 on the structure and microwave dielectric properties of Ca0.7Ti0.7La0.3Al0.3O3

The effect of excess Al₂O₃ on the densification, structure and microwave dielectric properties of Ca_0.7Ti_0.7La_0.3Al_0.3O₃ (CTLA) was investigated. CTLA ceramics were prepared using the conventional mixed oxide route. Excess Al₂O₃ in the range of 0.1–0.5 wt% was added. It was found that Al₂O₃ improved the densification. A phase rich in Ca and Al was found in the microstructure of Al₂O₃ doped samples. Additions of Al₂O₃ coupled with the slow cooling after sintering improved the microwave dielectric properties. CTLA ceramics with 0.25 wt% Al₂O₃ cooled at 5 °C/h showed high density and a uniform grain structure with ɛ_r = 46, Q × f = 38,289 and τ_f = +12 ppm/°C at 4 GHz. XRD and TEM examinations showed the presence of (1 1 2) and (1 1 0) type twins arising from a⁻a⁻c⁺ tilt system with the presence of anti-phase domain boundaries from the displacement of A-site cations of the orthorhombic perovskite structure.     

A comparative study of the magnetic and microwave properties of Al3+ and In3+ substituted Mg–Mn ferrites

The effect of substitution of diamagnetic Al³⁺ and In³⁺ ions for partial Fe³⁺ ions in a spinel lattice on the magnetic and microwave properties of magnesium–manganese (Mg–Mn) ferrites has been studied. Three kinds of Mg–Mn based ferrites with compositions of Mg_0.9Mn_0.1Fe₂O₄, Mg_0.9Mn_0.1Al_0.1Fe_1.9O₄, and Mg_0.9Mn_0.1In_0.1Fe_1.9O₄ were prepared by the solid-state reaction route. Each mixture of high-purity starting materials (oxide powders) in stoichiometric amounts was calcined at 1100 °C for 4 h, and the debinded green compacts were sintered at 1350 °C for 4 h. XRD examination confirmed that the sintered ferrite samples had a single-phase cubic spinel structure. The incorporation of Al³⁺ or In³⁺ ions in place of Fe³⁺ ions in Mg–Mn ferrites increased the average particle size, decreased the Curie temperature, and resulted in a broader resonance linewidth as compared to un-substituted Mg–Mn ferrites in the X-band. In this study, the In³⁺ substituted Mg–Mn ferrites exhibited the highest saturation magnetization of 35.7 emu/g, the lowest coercivity of 4.1 Oe, and the highest Q×f value of 1050 GHz at a frequency of 6.5 GHz.     

Photooxidation of iodide ion on some semiconductor and non-semiconductor surfaces

In 80% aqueous ethanol, TiO₂ (anatase), ZrO₂, ZnO, V₂O₅, Fe₂O₃ and Al₂O₃ photocatalyze the oxidation of iodide ion but CdO and CdS do not; the wavelength of illumination is 365 nm. However, Fe₂O₃ fails to bring in a sustainable photocatalysis in 60% aqueous ethanol. The photooxidation of iodide ion on TiO₂, ZrO₂, ZnO, V₂O₅ and Al₂O₃ in 60% aqueous ethanol was studied as a function of [I⁻], amount of catalyst suspended, airflow rate, light intensity and solvent composition. The metal oxides examined show sustainable photocatalytic activity. Iodine formation is larger with illumination at 254 nm than at 365 nm. The mechanisms of photocatalysis on semiconductor and non-semiconductor surfaces have been discussed. Photocatalytic generation of iodine has been analyzed using a kinetic model. The photocatalytic efficiencies are of the order V₂O₅ > TiO₂ > ZrO₂ > ZnO > Al₂O₃ and V₂O₅ > TiO₂ > ZrO₂ > ZnO=Fe₂O₃ > Al₂O₃ in 60% and 80% aqueous ethanol.     

Enhancing the thermoelectric properties of super-lattice Al2O3/ZnO atomic film via interface confinement

Aluminum oxide (Al₂O₃)/zinc oxide (ZnO) thin films deposited via atomic layer deposition (ALD) are demonstrated to enhance their thermoelectric properties by manipulating them with a nano-thick Al₂O₃ interface. The overall superlattice structure is tuned by varying the ZnO ALD sequence and the Al₂O₃ ALD sequence while maintaining the same composition. An aluminum-doped zinc oxide (AZO) thin film is deposited at 250 °C, and the Al₂O₃ thickness in the superlattice is gradually increased from 0.13 nm to 1.23 nm. The total film composition is fixed at 2% AZO. We observe that an efficient superlattice structure is made with a specific Al₂O₃ thickness. The thermal conductivity is significantly decreased from 0.57 W/mK to 0.26 W/mK as the thickness of the Al₂O₃ layer is increased. Additionally, the absolute Seebeck coefficient is increased from 14 μV/K to 65 μV/K. This may be caused by the interface confinement effect and interface scattering between the ZnO layer and the Al₂O₃ layer. The figure of merit ZT value is 0.14 for the most efficient structure.     

Low thermal conductivity of atomic layer deposition yttria-stabilized zirconia (YSZ) thin films for thermal insulation applications

Thermal insulation applications have long required materials with low thermal conductivity, and one example is yttria (Y₂O₃)-stabilized zirconia (ZrO₂) (YSZ) as thermal barrier coatings used in gas turbine engines. Although porosity has been a route to the low thermal conductivity of YSZ coatings, nonporous and conformal coating of YSZ thin films with low thermal conductivity may find a great impact on various thermal insulation applications in nanostructured materials and nanoscale devices. Here, we report on measurements of the thermal conductivity of atomic layer deposition-grown, nonporous YSZ thin films of thickness down to 35 nm using time-domain thermoreflectance. We find that the measured thermal conductivities are 1.35–1.5 W m⁻¹ K⁻¹ and do not strongly vary with film thickness. Without any reduction in thermal conductivity associated with porosity, the conductivities we report approach the minimum, amorphous limit, 1.25 W m⁻¹ K⁻¹, predicted by the minimum thermal conductivity model.     

Synthesis and characterization of S2O82 −/ZnFexAl2 − xO4 solid acid catalysts for the esterification of acetic acid with n-butanol

New spinel-types of S₂O₈^2 −/ZnFe_xAl_2 − xO₄ solid acid catalysts were prepared by sol–gel method. Their catalytic performances for the synthesis of n-butyl acetate were investigated. The catalysts were characterized by means of XRD, IR, XPS, FT-IR of adsorbed pyridine and NH₃-TPD. The experimental results showed that S₂O₈^2 −/ZnFe_xAl_2 − xO₄ solid acid catalysts maintained the spinel structure as well as the support of ZnFe_xAl_2 − xO₄. Fe^3 + ions were well incorporated and highly dispersed into the spinel lattice. S₂O₈^2 −/ZnFe_0.15Al_1.85O₄ exhibited the maximum conversion of acetic acid with 98.2%. Moreover, S₂O₈^2 −/ZnFe_0.15Al_1.85O₄ showed better reusability, which remained above 72.7% conversion of acetic acid even after being used five times.     

Effect of substrate temperature on microstructure and optical properties of nanocrystalline alumina thin films

Aluminum oxide (Al₂O₃) thin films were deposited on silicon (100) and quartz substrates by pulsed laser deposition (PLD) at an optimized oxygen partial pressure of 3.0×10^?3 mbar in the substrate temperatures range 300–973 K. The films were characterized by X-ray diffraction, transmission electron microscopy, atomic force microscopy, spectroscopic ellipsometry, UV–visible spectroscopy and nanoindentation. The X-ray diffraction studies showed that the films deposited at low substrate temperatures (300–673 K) were amorphous Al₂O₃, whereas those deposited at higher temperatures (≥773 K) were polycrystalline cubic γ-Al₂O₃. The transmission electron microscopy studies of the film prepared at 673 K, showed diffuse ring pattern indicating the amorphous nature of Al₂O₃. The surface morphology of the films was examined by atomic force microscopy showing dense and uniform nanostructures with increased surface roughness from 0.3 to 2.3 nm with increasing substrate temperature. The optical studies were carried out by ellipsometry in the energy range 1.5–5.5 eV and revealed that the refractive index increased from 1.69 to 1.75 (λ=632.8 nm) with increasing substrate temperature. The UV–visible spectroscopy analysis indicated higher transmittance (>80%) for all the films. Nanoindentation studies revealed the hardness values of 20.8 and 24.7 GPa for the films prepared at 300 K and 973 K respectively.     

Spark plasma sintering of Al2O3–Ni nanocomposites using Ni nanoparticles produced by rotary chemical vapour deposition

Al₂O₃–Ni nanocomposites were fabricated by spark plasma sintering (SPS) using Ni nanoparticle produced by rotary chemical vapour deposition. Carbon-free Ni nanoparticles were prepared by reacting NiCp₂ with O₂ to form NiO and then reducing to Ni by H₂ for 30 min at 823 K. The highest Ni content and grain size were 7.8 wt.% and 47.7 nm, respectively, using a NiCp₂ supply rate (R_s) of 1.67 × 10⁻⁶ kg s⁻¹. At a sintering temperature (T_SPS) of 1573 K, the hardness of Al₂O₃–3.8 wt.% Ni was 20.5 GPa, around 1 GPa higher than that of monolithic Al₂O₃ sintered at the same temperature. The tensile strength of Al₂O₃–4.6 wt.% Ni was 170 MPa, 60 MPa higher than that of Al₂O₃ sintered at 1573 K.     

Bio-inspired cross-linking with borate for enhancing gas-barrier properties of poly(vinyl alcohol)/graphene oxide composite films

The demand for flexible and transparent barrier films in industries has been increasing. Learning from nature, borate ions were used to cross-link poly(vinyl alcohol) (PVA) and graphene oxide (GO) to produce flexible, transparent high-barrier composite films with a bio-inspired structure. PVA/GO films with only 0.1 wt% GO and 1 wt% cross-linker exhibited an O₂ transmission rate <0.005 cc m⁻² day⁻¹, an O₂ permeability <5.0 × 10⁻²⁰ cm³ cm cm⁻² Pa⁻¹ s⁻¹, and a transmittance at 550 nm >85%; thus, they can be used for flexible electronics. Fourier transform infrared spectrometry and X-ray photoelectron spectroscopy indicated that the outstanding barrier properties are attributed to the formation of chemical cross-linking involving borate ions, GO sheets, and PVA, similar to the borate cross-links in high-order plants. Comparing our experimental data with the Cussler model, we found that the effective aspect ratio was significantly increased after cross-linking, suggesting that cross-linking networks connected GO with each other to form ultra-large impermeable regions. A feasible green technique, with potential for commercial production of barrier films for flexible electronics was presented.