Structures and microwave dielectric properties of Ca(1−x)Nd2x/3TiO3 ceramics

Ca_(1?x)Nd_2x/3TiO₃ microwave dielectric ceramics were prepared by the mixed oxide route; powders were calcined at 1100 °C and sintered at 1450–1500 °C. High density, single phase products were obtained for all compositions. Grain sizes ranged from 1 μm to 100 μm. There was evidence of significant discontinuous grain growth in mid range compositions; all ceramics were characterised by complex domain structures. With increasing Nd content there was a evidence of a transition from an orthorhombic Pbnm structure to a monoclinic C2/m structure. This was accompanied by a decrease in relative permittivity (?_r) from 180 to 78, and decrease in the temperature coefficient of resonant frequency (τ_f) from +770 ppm K^?1 to +200 ppm K^?1. The product of dielectric Q value and resonant frequency (Q × f) varied in a grossly non-systematic way, exhibiting a peak at 13,000 GHz in Ca_0.7Nd_0.2TiO₃.     

Microstructure and microwave dielectric properties of Li2Ti1−x(Zn1/3Nb2/3)xO3 ceramics

Li₂Ti_1?x(Zn_1/3Nb_2/3)_xO₃ (0≤x≤0.5) ceramics were prepared by a solid state ceramic route, and the phase purity, microstructure, and microwave dielectric properties were investigated. The XRD results suggest the formation of solid solutions for all studied compositions (0≤x≤5). The dielectric properties are strongly dependent on the compositions, the densifications and the microstructures of the samples. The Q×f value increases with x up to x=0.2 and then decreases with the further increase of x. The best microwave dielectric properties of ε_r=20.5, Q×f =75,257 GHz, and τ_f =15.4 ppm/°C could be obtained when x=0.2.     

Crystal structure,phase compositions,and microwave dielectric properties of malayaite-type Ca1−xSrxSnSiO5 ceramics

Low-permittivity Ca_1−xSr_xSnSiO₅ (0 ≤ x ≤ 0.45) microwave dielectric ceramics were prepared via traditional state-reaction at 1400°C-1450°C for 5 hours. Moreover the microwave dielectric properties of SnO₂ ceramic were obtained for the first time. SnO₂ ceramic was difficult to densify, and SnO₂ ceramic (ρ_rel = 65.1%) that was sintered at 1525°C exhibited the optimal microwave dielectric properties of ε_r = 5.27, Q × f = 89 300 GHz (at 14.5 GHz), and τ_f = −26.7 ppm/°C. For Ca_1−xSr_xSnSiO₅ (0 ≤ x ≤ 0.15) ceramics, Sr²⁺ could be dissolved in the Ca²⁺ site of Ca_1−xSr_xSnSiO₅ to form a single phase, and the partial substitution of Ca²⁺ by Sr²⁺ could improve the microwave dielectric properties of CaSnSiO₅ ceramic. Secondary phases (SnO₂ and SrSiO₃) appeared at 0.2 ≤ x ≤ 0.45 and could adjust the abnormally positive τ_f value of CaSnSiO₅ ceramic. The highest Q × f value (60 100 GHz at 10.4 GHz) and optimal microwave dielectric properties (ε_r = 9.42, Q × f = 47 500 GHz at 12.4 GHz, and τ_f = −1.2 ppm/°C) of Ca_1−xSr_xSnSiO₅ ceramics were obtained at x = 0.05 and 0.45, respectively.     

Phase composition,crystal structure and microwave dielectric properties of Mg2−xCuxSiO4 ceramics

In this work, the Mg_2-xCu_xSiO₄(x = 0–0.40) microwave dielectric ceramics were prepared using solid-state reaction method. Compared with the Mg₂SiO₄ sample, the Cu-substituted Mg samples could be sintered at a lower temperature. The Mg_2?xCu_xSiO₄ ceramics exhibit the composite phases of Mg₂SiO₄ and a small quantity of MgSiO₃. The Cu²⁺ ion presented a solid solution with the Mg₂SiO₄ phase and preferentially occupy Mg(1) site. The distortion of MgO₆ octahedron was modified by Cu²⁺ ions, resulting in a positive change in the temperature coefficient of resonance frequency (τ_f) values. Excellent microwave dielectric properties of ε_r = 6.35, high Qf of ～ 188,500 GHz and near zero τ_f = ?2.0 ppm/°C were achieved at x = 0.08 under sintering at 1250 °C for 4 h. Thus, the fabricated ceramics were considered as possible candidates for millimeter-wave device applications.     

Phase structure,band gap and microwave dielectric properties of Ba8Ti3Nb4−xSbxO24 ceramics

High dielectric constant and low loss ceramics in the Ba₈Ti₃Nb_4?xSb_xO₂₄ (x=0–2) system were prepared by conventional solid-state ceramic route. As x increased from 0 to 1.5, a single phase with hexagonal 8H perovskite structure was formed and the band gap values increased from 3.38 to 3.47 eV. However, the Sb₂O₃ secondary phase was detected as the x reached 2. The optimum sintering temperature was reduced from 1460 to 1380 °C, the quality factors (Q×f) were effectively enhanced from 22,900 to 38,000 GHz and τ_f was significantly lowered from 110 ppm/°C to 2 ppm/°C, whereas the dielectric constant decreased from 49 to 35. A good combined microwave dielectric properties with ε_r=37.5, Q×f=38,000 GHz, τ_f=15 ppm/°C were obtained for x=1.5.     

Preparation and microwave dielectric properties of Ca0.6La0.8/3(SnxTi1−x)O3 ceramics

Ca_0.6La_0.8/3(Sn_xTi_1−x)O₃ ceramics were prepared via a conventional solid state reaction method, and the effect of Sn doping on their crystal phase structure and microwave dielectric properties was investigated. Results showed that Sn doping could hinder the formation of the rutile TiO₂ detrimental phase of Ca_0.6La_0.8/3TiO₃ ceramic. Also, the Q×f₀ value was enhanced and the τ_f value was lowered by Sn doping. The best microwave dielectric properties, i. e. ε_r=113 and Q×f₀=8487 GHz were obtained for a Sn doping content of 0.02. The mechanism of the improved properties deriving by Sn doping is discussed.     

Intrinsic factors affecting the microwave dielectric properties of Mg2Ti1−x(Mg1/3Sb2/3)xO4 ceramics

The effect of crystal structure on the microwave dielectric properties of Mg₂Ti_1−x(Mg_1/3Sb_2/3)_xO₄ (0.025≤x≤0.15) ceramics was investigated. A single phase having a cubic inverse spinel structure formed over the entire range of compositions, in specimens sintered at 1450 °C for 4 h. The structural characteristics of these ceramics were quantitatively evaluated by applying the Rietveld refinement method to the X-ray diffraction data. The largest bond strength between the cation and the oxygen ion and hence the highest quality factor (Qf) of the specimens were obtained at x=0.05. Although the ionic polarizability (3.29 Å³) of (Mg_1/3Sb_2/3)⁴⁺ was larger than that (2.93 Å³) of Ti⁴⁺, the dielectric constant (K) of the specimens decreased owing to the decrease of rattling effect with increasing x. In addition, the temperature coefficient of resonant frequency (TCF) decreased with decreasing K values. Typically, a high Qf value of 229,000 GHz was obtained for the specimens with x=0.05.     

Bond characteristics,sintering behavior and microwave dielectric properties of Ce2[Zr1−x(Ca1/3Sb2/3)x]3(MoO4)9 ceramics

Ce₂[Zr_1?x(Ca_1/3Sb_2/3)_x]₃(MoO₄)₉ (CZ_1?x(CS)_xM) (x = 0.02–0.10) ceramics were prepared by the conventional solid-state reaction method. The correlations between the chemical bond parameters and microwave dielectric properties were calculated and analyzed by using the Phillips–Van Vechten–Levine (P–V–L) theory. Phase composition and microstructures were evaluated by scanning electron microscopy and X-ray diffraction patterns. Lattice parameters were obtained by Rietveld refinements based on XRD data. Excellent properties for Ce₂[Zr_0.96(Ca_1/3Sb_2/3)_0.04]₃(MoO₄)₉ ceramic sintered at 775 °C: ε_r = 10.68, Q×f = 85,336 GHz and τ_f = ?7.58 ppm/°C were achieved.     

Microstructural,dielectric, and nonlinear properties of Ca1–xCdxCu3Ti4O12 thin films

The effects of the A-site transition from Ca²⁺ to Cd²⁺ on the microstructure, morphology, and electrical properties of Ca_1–xCd_xCu₃Ti₄O₁₂ thin films were studied. The film surfaces are smooth, compact, and without cracks. The CaCu₃Ti₄O₁₂ and CdCu₃Ti₄O₁₂ films had similar morphologies and electrical properties. The grain size initially increased and subsequently decreased with the transition from Ca²⁺ to Cd²⁺ at the A site. The change in Ca sites has an obvious effect on Cu sites. The film with more copper-rich phases at the grain boundaries had the largest grain size when Ca²⁺ and Cd²⁺ equally occupied the A sites. The dielectric constant of Ca_1–xCd_xCu₃Ti₄O₁₂ was closely related to the copper oxide secondary phase. The dielectric loss tangent and nonlinearity coefficient were associated with the compact structure, copper oxide secondary phase, copper vacancies and improved grain boundary response. The simultaneous occupancy of the A sites by Ca²⁺ and Cd²⁺ improves the dielectric and nonlinear properties of Ca_1–xCd_xCu₃Ti₄O₁₂. Optimal dielectric properties (?_r = 5238 and tan δ = 0.009 at 1 kHz) and an enhanced nonlinearity coefficient (～4.22) were simultaneously obtained for the Ca_0.5Cd_0.5Cu₃Ti₄O₁₂ thin film. This study demonstrates that the extrinsic mechanism is the main origin of the high dielectric constant values in Ca_1–xCd_xCu₃Ti₄O₁₂ films. The resulting films are suitable for applications in capacitors.     

Colossal dielectric permittivity and electrical properties of the grain boundary of Ca1−3x/2YbxCu3−yMgyTi4O12 (x=0.05, y=0.05 and 0.30)

Dielectric properties of Ca_1−3x/2Yb_xCu_3−yMg_yTi₄O₁₂ (x=0.05, y=0.05 and 0.30) prepared using a modified sol–gel method and sintered at 1070 °C for 4 h were investigated. The mean grain sizes of the CaCu₃Ti₄O₁₂ and co-doped Ca_0.925Yb_0.05Cu_3−yMg_yTi₄O₁₂ (y=0.05 and 0.30) ceramics were ≈15.86, ≈3.37, and ≈2.32 μm, respectively. Interestingly, the dielectric properties can be effectively improved by co-doping with Yb³⁺ and Mg²⁺ ions to simultaneously control the microstructure and properties of grain boundaries, respectively. These properties were improved over those of single-doped and un-doped CaCu₃Ti₄O₁₂ ceramics. A highly frequency−independent colossal dielectric permittivity (≈10⁴) in the range of 10²–10⁶ Hz with very low loss tangent values of 0.018–0.028 at 1 kHz were successfully achieved in the co-doped Ca_0.925Yb_0.05Cu_3−yMg_yTi₄O₁₂ ceramics. Furthermore, the temperature stability of the colossal dielectric response of Ca_1−3x/2Yb_xCu_3−yMg_yTi₄O₁₂ was also improved to values of less than ±15% in the temperature range from −70 to 100 °C.     

Synthesis,structure and dielectric properties of (1−x)[0.9BiFeO3–0.1DyFeO3]–xPbTiO3 pseudo-binary ceramics

In order to develop multiferroics with large magnetization and polarization, we have prepared a series of (1?x)[0.9BiFeO₃–0.1DyFeO₃]–xPbTiO₃ [BDF–xPT] solid solution ceramics by solid state reaction. X-ray diffraction reveals that, with the increase of PbTiO₃ concentration, the solid solution transforms from a rhombohedral to a tetragonal phase with the presence of a morphotropic phase boundary (MPB) region located at 0.28≤x≤0.40 at room temperature, in which the rhombohedral, tetragonal and orthorhombic phases coexist. The temperature dependence of the dielectric permittivity indicates that the Curie temperature decreases with the increasing amount of PbTiO₃. Based upon the structural analysis and dielectric characterization, a preliminary phase diagram for the BDF?xPT pseudo-binary system has been proposed. It is found that the ceramics of compositions around the MPB exhibits much better dielectric properties with dielectric constant of the BDF–0.37PT ceramics reaching 459 at 1 kHz, confirming the beneficial effects of the MPB on the dielectric performance.     

New scheelite-type Cd1−3x⌷xGd2x(MoO4)1−3x(WO4)3x ceramics – their structure,thermal and magnetic properties

Polycrystalline samples of scheelite-type Cd_1−3x⌷_xGd_2x(MoO₄)_1−3x(WO₄)_3x solid solution with limited homogeneity (0<x≤0.25) and cationic vacancies (denoted as ⌷) have successfully prepared by a high-temperature annealing of CdMoO₄/Gd₂(WO₄)₃ mixtures composed of 50.00 mol% and less of gadolinium tungstate. Initial reactants and obtained ceramic materials were characterized by XRD, simultaneous DTA–TG, and SEM techniques. A phase diagram of the pseudobinary CdMoO₄–Gd₂(WO₄)₃ system was constructed. The eutectic point corresponds to 1404±5 K and ~70.00 mol% of gadolinium tungstate in an initial CdMoO₄/Gd₂(WO₄)₃ mixture. With decreasing of Gd³⁺ content in a CdMoO₄ framework, the melting point of Cd_1−3x⌷_xGd_2x(MoO₄)_1−3x(WO₄)_3x increases from 1406 (x=0.25) to 1419 K (x=0.0833), and next decreases to 1408 K (x=0). EPR method was used to identify paramagnetic Gd³⁺ centers in Cd_1−3x⌷_xGd_2x(MoO₄)_1−3x(WO₄)_3x for different values of x parameter as well as to select biphasic samples containing both Cd_0.25⌷_0.25Gd_0.50(MoO₄)_0.25(WO₄)_0.75 and Gd₂(WO₄)₃.     

Crystal structure and microwave dielectric properties of Zn0.9Ti0.8−xSnxNb2.2O8 ceramics

The crystal structure and microwave dielectric properties of Zn_0.9Ti_0.8?xSn_xNb_2.2O₈ (x = 0.00, 0.05, 0.10, 0.15) ceramics sintered at temperatures ranging from 1100 °C to 1140 °C for 6 h were investigated. A single phase with ixiolite structure was obtained. With the increase of Sn content, the dielectric constant decreased attributed to the decrease of dielectric polarizability. The Qf value decreased with the decrease of packing fraction and grain size. The temperature coefficient of resonant frequency (τ_f) increased due to the increase of the bond valence of Zn_0.9Ti_0.8?xSn_xNb_2.2O₈ ceramics. The excellent microwave dielectric properties of ? = 35.05, Qf = 49,100 GHz, τ_f = ?27.6 × 10^?6/°C were obtained for Zn_0.9Ti_0.8?xSn_xNb_2.2O₈ (x = 0.05) specimens sintered at 1120 °C for 6 h.     

Microwave dielectric properties of Bi2O3-doped Ca[(Li1/3Nb2/3)1−xTix]O3−δ ceramics

The effect of the additive on the densification, low temperature sintering, and microwave dielectric properties of the Ca[(Li_1/3Nb_2/3)_1−xTi_x]O_3−δ(CLNT) was investigated. Bi₂O₃ addition improved the densification and reduced the sintering temperature from 1150 to 900 °C of CLNT microwave dielectric ceramics. As the Bi₂O₃ content increased, the dielectric constant (ε_r) and bulk density increased. The quality factor (Q·f₀), however, was decreased slightly. The temperature coefficient of resonant frequency (τ_f) shifted to a positive value with increasing Bi₂O₃ content. The dielectric properties (ε_r, Q·f_0, τ_f) of Ca[(Li_1/3Nb_2/3)_0.95Ti_0.05]O_3−δ and Ca[(Li_1/3Nb_2/3)_0.8 Ti_0.2]O_3−δ with 5 wt.% Bi₂O₃ sintered at 900 °C for 3 were 20, 6500 GHz, −4 ppm/°C, and 35, 11,000 GHz, 13 ppm/°, respectively. The relationship between the microstructure and dielectric properties was studied by X-ray diffraction (XRD), and SEM.     

Structural,dielectric and ferroelectric properties of Ba1−x(Bi0.5Na0.5)xTiO3 ceramics

Lead free Ba_1?x(Bi_0.5Na_0.5)_xTiO₃ (x=0, 0.02, 0.04, 0.06, 0.08, 0.1) ferroelectric ceramics were synthesized by conventional solid state reaction technique. Sintering was done at 1200 °C for 2 h in air atmosphere. The final products have tetragonal symmetry with decreasing c/a ratio confirmed by X-ray diffraction analysis. The grain size varies between 300 nm to 1000 nm for x=0 to 0.1. With increase in Bi_0.5Na_0.5TiO₃ [BNT] content, the room temperature permittivity decreases whereas the Curie temperature (T_c) increases and its highest value was found to be 155 °C for 10 mol% of BNT addition. The ceramics show stable and low dielectric loss characteristics. The remnant polarization (P_r) and the coercive field (E_c) increases monotonously with increase in BNT content. The highest value of 2P_r (=17 μC/cm²) and 2E_c (=22 Kv/cm) was obtained for x=10 mol% BNT addition.     

Phase formation,dielectric and ferroelectric properties of CaxBa1−xNb2O6 ceramics

Lead-free Ca_xBa_1?xNb₂O₆ (CBN, 0.20≤x≤0.35) ceramics were prepared by the conventional solid state method. Effects of Ca content on the phase formation, microstructure, dielectric and ferroelectric properties for the prepared CBN ceramics were systematically studied. XRD results showed that pure CBN phase with tungsten bronze structure could be obtained from the solid solutions of BaNb₂O₆ and CaNb₂O₆ in all ceramics. Higher Ca contents favored the occurrence of grains with anisometric morphology, but no abnormal grain growth could be found in all compositions. With the increase of x, Curie temperature T_c shifted downward, whereas the maximum dielectric constant ε_m increased initially and then decreased. All the ceramics showed an intermediate relaxor-like behavior between normal and ideal relaxor ferroelectrics according to the modified Curie–Weiss law. Normal ferroelectric hysteresis loops were observed in all compositions. Both remnant polarization P_r and coercive field E_c increased initially and then decreased with the increase of x. The ceramics with homogeneous microstructure, high density and better properties were obtained at x=0.28 with ε_m=2998, T_c=234 °C, P_r=3.98 μC cm^?2 and E_c=14.03 kV cm^?1.     

Microwave dielectric properties of (1−x)ZnTa2O6−xMgNb2O6 ceramics

Single phase MgNb₂O₆ and ZnTa₂O₆ powders were synthesized by solid-state method, and the high quality factor composite ceramics of (1?x)ZnTa₂O₆?xMgNb₂O₆ (x=0, 0.05, 0.10, 0.15, 0.20, 0.25 and 1.0) were prepared using the as-synthesized powders. The microwave dielectric properties, microstructure, phase transition and sintering behavior of the composite ceramics were investigated. The X-ray diffraction analysis revealed that solid solution between ZnTa₂O₆ and MgNb₂O₆ phases appeared in the composite ceramic. SEM results show that the grain sizes of the composite ceramics increased with increasing x values. The temperature coefficient of resonant frequency of (1?x)ZnTa₂O₆?xMgNb₂O₆ composite ceramics reaches near-zero of 1.02 ppm/°C with ε_r=35.58 and a high quality factor of 65500 GHz when x=0.20 and sintered at 1350 °C for 2 h.     

Dielectric properties of (1−x)La(Mg1/2Ti1/2)O3–xSrTiO3 ceramics

Powders of (1−x)La(Mg_1/2Ti_1/2)O₃–xSrTiO₃ series have been prepared by a non-conventional chemical route based on the Pechini method. Homogeneous solid solutions allowed the sintering of dense and single-phase ceramics for the full composition range (0⩽x<1). Crystal structure of the ceramics was investigated by XRD and several compositional driven structural transformations were observed. The dielectric function of the ceramics was measured at radio, microwave and far infrared (FIR) frequency ranges to help clarifying the relationship between dielectric properties and structure. The FIR data were found to reflect clearly the sequence of structural modifications observed. In order to evaluate the importance of intrinsic mechanisms in the dielectric response at the GHz and MHz ranges, the reflectivity spectra were fit to the Berreman–Unterwald form of dielectric function. The fits showed that the lower frequency dielectric response seems to be dominated by lattice phonons. Microwave permittivity and temperature coefficient of the resonant frequency were found to obey a hyperbolic-type law.     

Ferroelectric and dielectric properties of Nd2−xCexTi2O7 ceramics

The solid solution system Nd_2?xCe_xTi₂O₇ has been investigated. The solubility limit of Ce in Nd_2?xCe_xTi₂O₇ was found to be 0·5–0·75 according to X-ray diffraction and X-ray photoelectron spectroscopy results. Ce substitution increases the b and c axes and the volume of the unit cell due to its larger ionic radius. Nd_2?xCe_xTi₂O₇ (x?=?0·05, 0·25, 0·5, 0·75) textured ceramics were fabricated using spark plasma sintering. The ferroelectric and dielectric properties of the ceramics were studied. Ce substitution decreases the Curie point T_c of Nd_2?xCe_xTi₂O₇ compounds. The results suggest that the T_c of Ce₂Ti₂O₇ is <1445°C.     

Magnetic and dielectric properties of BaFe1/2Sn1/2O3-δ ceramics

Ceramic samples of barium ferrostannate BaFe_1/2Sn_1/2O_3-δ have been prepared by the sol-gel and hydrothermal synthesis methods. To reduce the number of oxygen vacancies, annealing in oxygen has been performed. The heat capacity, magnetization, Mössbauer and dielectric spectroscopy data point to the appearance of antiferromagnetic ordering below ～55 K followed by further spin glass magnetic ordering below 15 K. The giant dielectric response seems to be due to the relaxation of electrons trapped by oxygen vacancies. Comparison of the Fe K-edge X-ray absorption spectra of BaFe_1/2Sn_1/2O_3-δ confirmed substantial difference from those of the similar stoichiometric BaFe_1/2Nb_1/2O₃ perovskite.