反应磁控溅射制备的Cr-N薄膜的成相行为

采用反应磁控溅射在不锈钢衬底上制备Cr-N薄膜,并研究了基片温度、氮气分压和溅射功率变化对薄膜相组成的影响。结果表明,基片温度升高使薄膜由单一的CrN相变成CrN和Cr2N两相共存,同时使有效的沉积速率下降;在基片温度为373K、溅射功率约45W时,氮气和氩气流量比在1：4到3：2的范围内变化时,薄膜的相组成几乎没有明显的变化;过高的溅射功率使薄膜以非晶态的形式存在。热处理后的Cr-N薄膜通常有CrN和Cr2N两相共存。     

钒氧化物薄膜的溅射法制备及电学性质研究

目的通过真空镀膜工艺,获得电学性能优良的钒氧化物薄膜。方法采用直流反应磁控溅射法,通过改变镀膜时部分实验条件,包括沉积气氛中氧含量、衬底温度以及衬底材质,进而控制薄膜组成成分。利用椭偏仪、XRD和变温四探针仪检测所镀钒氧化物薄膜的厚度、晶体结构及电学性能。结果衬底温度在350~400℃之间,镀膜室氧气含量在40%~50%之间时,反应溅射所得的钒氧化物薄膜具有较高的温度敏感性,此外得益于(0001)面的α-Al_2O_3与VO_2有相近的晶格参数,在此衬底上沉积出的钒氧化物薄膜电阻在30~100℃区间内有一个数量级的线性变化。结论确定了最佳的钒氧化物薄膜镀制条件范围,同时发现蓝宝石衬底相比于硅片和玻璃片更适合外延生长VO_2薄膜。按此种方法所得样品具有优良的电学性能,可以应用到热敏电阻等研究领域当中。     

钨铜基板上氮化铝薄膜的沉积

采用直流反应磁控溅射的技术,在钨铜基片上沉积了AlN薄膜,通过X射线衍射、扫描电镜及能量色散能谱仪和电流电压测试仪对不同条件下制备的AlN薄膜的结构、形貌和电阻率进行了表征。结果表明,在一定范围内增加功率可以显著改善氮化铝结晶特性,在300 W时,氮化铝薄膜表现为比较明显的(100)择优取向,沉积速度达5μm/h;退火处理可以改善薄膜的结晶性,同时提高薄膜的电阻率;SEM分析表明,在300 W时,钨铜衬底上氮化铝比较均匀,较大钨颗粒已被覆盖,但致密性需要进一步提高。     

气压对离子源增强磁控溅射制备氮化铝薄膜的影响

目的 制备性能优异的氮化铝薄膜.方法 采用射频感应耦合离子源辅助直流磁控溅射的方法 制备氮化铝薄膜,在不同的气压下,在Si(100)基片和普通玻璃上生长了不同晶面取向的氮化铝薄膜.使用X射线衍射仪(XRD)、场发射扫描电镜(FESEM)、原子力显微镜(AFM)分析氮化铝薄膜的结构、晶面取向、表面形貌及薄膜表面粗糙度,使用紫外可见分光光度计测定薄膜的透过率,并计算薄膜的禁带宽度.研究气压的大小对磁控溅射制备氮化铝薄膜微观结构的影响.结果 在各气压下,薄膜生长以(100)面取向为主.在0.7Pa前,(100)面的衍射峰强度逐渐增强,0.7 Pa之后减弱.(002)面衍射峰强度在0.6Pa之前较大,0.6Pa之后变小.各气压下薄膜表面均方根粗糙度均小于3nm,且随着气压的增大先增大后减小,0.7 Pa时最大达到2.678nm.各气压下所制备薄膜的透过率均大于60%,0.7Pa时薄膜的禁带宽度为5.4eV.结论 较高气压有利于(100)晶面的生长,较低气压有利于(002)晶面的生长;(100)面衍射峰强度在0.7 Pa时达到最大;随气压的增大,薄膜表面粗糙度先增大后减小;所制备的薄膜为直接带隙半导体薄膜.     

铝表面磁控溅射沉积不锈钢薄膜及其性能

在铝箔表面采用直流反应磁控溅射方法进行溅射试验,在铝箔表面沉积出不锈钢薄膜.采用磨损试验、盐雾试验、显微硬度试验和薄膜厚度测试等方法对试样进行检测,用扫描电镜和金相显微镜对试样表面形貌观察分析.试验结果表明,溅射功率选择在300 W时,在铝箔表面沉积不锈钢薄膜,铝箔表面耐磨性增大,硬度增大,沉积的不锈钢薄膜晶粒尺寸细小、均匀致密,表面呈金属光泽,薄膜与基体结合良好,并具有一定的耐蚀性能.     

沉积温度对ZnO薄膜结构及发光性能的影响

利用Nd-YAG激光器(波长为1064nm,频率为10Hz)做光源,采用纯金属锌靶,以Si(111)为基体在有氧的气氛中通过激光烧蚀锌靶表面来制备氧化锌薄膜,研究基体温度对ZnO薄膜结构及发光性能的影响.通过XRD和AFM原子力显微镜来表征氧化锌薄膜的结构和表面形貌,其光学性质由光致发光谱来表征.结果表明:在450-550 ℃的条件下沉积的ZnO薄膜具有c-轴择优取向,500℃时c-轴取向最明显.具有c-轴取向的ZnO薄膜具有强的紫外光发射和弱的绿光发射,发光中心在518nm处的黄绿光发射主要归因于电子从导带底部到氧位错缺陷OZn能级之间的跃迁.     

磁控溅射法制备CrTiAlCN镀层中主要元素的化学态

采用闭合场非平衡磁控溅射离子镀技术在单晶硅(111)衬底上沉积了CrTiAlCN镀层,研究了不同C靶电流CrTiAlCN物相组成,并分析了镀层中主要元素的化学态.X射线衍射分析表明,当C靶电流Ic从0增大到2.4 A时,镀层由晶态向非晶态转变;X射线光电子能谱分析表明,碳元素主要以C-C-C-Cr和C-Ti键形式存在;N元素是主要以CrN、Cr2N和TiN的形式存在;Cr元素主要以CrN、Cr2N及CrCx的形式存在.     

真空铝热还原法制备金属Sr的热力学分析及实验研究

通过热力学计算,得出SrO被Al还原的化学反应自由能和还原反应临界温度,表明造渣反应和真空可有效降低化学反应自由能,由此将还原反应临界温度由标准状态的2244 K降低到1100 K以下.热力学计算、反应产物X射线衍射分析及56%产Sr率测量结果均表明,真空铝热还原法制备金属Sr实际上同时发生了2个反应.反应产物除蒸馏出的金属Sr(纯度为99.0%)外,残留渣团主要为3SrO·Al2O3,并掺有SrO·Al2O3.     

直流磁控溅射法在PET基板上制备AZO薄膜

室温下用直流磁控溅射法在PET塑料基板上制备氧化锌薄膜及掺铝氧化锌AZO(ZnO∶Al)薄膜.通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)、四点探针仪、霍尔效应仪及光谱仪等装置,考察了氧分率、溅射功率及铝掺杂量等工艺参数对薄膜微观结构和光电性能的影响.结果表明:AZO薄膜晶体结构为纯ZnO的六角纤锌矿结构.随着Al掺杂量增多,AZO薄膜导电性增加,透光率下降.在氧分率为8.2％,ZnO(40 nm)/Al(6 nm)三层膜条件下,得到电阻率为5.66×10-2Ω·cm,可见光范围内透光率约为80％的AZO薄膜.     

纳米晶氮化铝粉料的制备

采用溶胶-凝胶工艺结合碳热氮化还原法进行纳米晶AlN粉末的制备和表征.以异丙醇铝((C3H7O)3Al)、蔗糖、尿素((NH2)2CO)为原料,通过控制硝酸和水的加入量,制备出透明的溶胶,经浓缩后得到透明的凝胶,干燥后得到分子水平混合的铝源和碳源的前驱体,经裂解、碳热氮化还原法制备出纳米晶AlN粉末.系统研究了C/Al比、添加尿素、碳热氮化还原反应的温度和时间等因素对合成粉料特性的影响,并进一步优化了制备工艺参数.采用XRD、BET等对合成产物的特性进行了分析和表征.通过原料组成、工艺参数的优化,制备出高纯纳米晶AlN粉末,其晶粒尺寸可达23 nm,除碳后比表面积可达70m2/g.     

The characteristics of gold films deposited on ceramic substrate

A large quantity of gold (approximately 10 tonnes yearly) is consumed, all over the world, just to decorate ceramic and glassware. Due to their advanced chemical stability gold films are used for different high technology applications. The technologies for obtaining the best “liquid bright gold” were intensively studied, but the quality of the decor coatings (films) were empirically assessed. We proposed a scientific investigation of the characteristics of gold films, deposited on ceramic substrates, from “liquid bright golds”. The composition of the film has been determined by EDS (Energy Dispersive X-ray Spectrometry). The distribution of the elements was determined at the surface of the film and in cross-section. The surface distribution of the elements was uniform. The diffusion process of the film into substrate and the migration of the substrate elements at the interface region and into the film have been highlighted.     

镁合金表面纳米TiSiN复合薄膜的制备及其结构和耐蚀耐磨性能分析

为提高镁合金耐蚀和耐磨性,扩大其在航空领域的应用,采用反应磁控溅射法,分别在AZ31和Mg8Li两种镁合金基体上制备了复合TiSiN薄膜. 采用X射线荧光光谱、扫描电镜、原子力显微镜和X射线小角掠入射分别对薄膜表面元素分布、形貌、膜层结构和晶粒尺寸进行了分析. 采用电化学工作站和球盘式摩擦磨损试验机分别对薄膜在3.5%NaCl溶液中的腐蚀行为和在空气中的摩擦磨损性能进行了研究. 结果表明,薄膜中Ti和Si元素比例与靶材相近,元素在整个膜层表面呈高低交替的环形分布,Mg8Li基体上薄膜的分布较为均匀;薄膜主要由TiN和Ti₂N两相组成,AZ31表面薄膜的晶粒尺寸和粗糙度均小于Mg8Li表面的薄膜;两种基体镀膜后的腐蚀电流密度降低了三个数量级,摩擦系数低于0.4,磨损率在10?6 m3/Nm数量级.     

基材温度对采用磁控溅射制备的Ti-Al-Si-Cu-N涂层的微观结构及摩擦学性能的影响

本文中,采用反应磁控溅射技术在304不锈钢基片上沉积Ti-Al-Si-Cu-N涂层。通过扫描电镜（SEM）、能谱仪（EDS）、X射线衍射仪（XRD）、纳米压痕仪、划痕仪和球盘式摩擦磨损试验机研究了不同的基材温度对涂层结构和摩擦学性能的影响。结果表明：随着沉积温度从室温升至250 oC,涂层变得表面平滑,结构致密。硬度和弹性模量随沉积温度的升高而升高。划痕实验表明：当沉积温度分别为室温,150 oC 和250 oC时,临界载荷为3.85 N, 3.45 N 和5.10 N。当沉积温度为250 oC时,涂层的摩擦系数和磨损量最小,磨损机制主要为磨粒磨损摩擦过程中产生的磨屑主要来自GCr15不锈钢珠。在较低的沉积温度下,涂层的磨损机理主要为脆性断裂和磨粒磨损。     

ZnS衬底表面制备HfO2增透保护膜的性能

用射频磁控溅射法在CVD ZnS衬底上制备了HfO2薄膜,利用X射线衍射(XRD),扫描电镜(SEM)、原子力显微镜(AFM)、傅里叶红外光谱(FTIR)和纳米力学探针对HfO2薄膜的结构和性能进行了分析和测试。结果表明,制备的HfO2为单斜相,膜层致密、表面平整、粗糙度仅为3.0 nm,硬度(7.3 GPa)显著高于衬底ZnS的硬度(2.6 GPa)。采用ZnO薄膜作过渡层,可有效提高HfO2与ZnS衬底的结合强度。单面镀制HfO2薄膜后,ZnS衬底在8-12μm长波红外波段的透过率最高可达81.5%,较之ZnS基体提高了5.8%,双面镀制HfO2薄膜后透过率最高可达90.5%,较之ZnS基体提高了14.8%,与理论计算结果吻合较好,适合作为ZnS窗口的增透保护膜。     

Preparation and oxygen-sensing properties of TiO2 porous thin films on alumina substrate

The titanium dioxide sols were synthesized with tetrabutyl titanate as precursor, diethanolamine（DEA） as complexing agent , polyethylene glycol （PEG） as organic template. The porous films were prepared by sol-gel method, The structures and morphology of the titanium dioxide porous films were characterized by FE-SEM. The formation mechanism of TiO2 porous films and the relation between the porous structure and oxygen-sensing properties of TiO2 films were studied. Ordered structure was formed by assembling between TiO2 colloid particles and the template molecules. PEG molecules acted on TiO2 colloid particles by hydrogen bond and bridge oxygen. The porous structure was formed after the organic template was decomposed when calcining the films. The diameter, amount and distribution of the pores in the films are related with the content of PEG. The pore diameter increases with increasing of content of PEG and the pore density reaches the maximum at certain content. Oxygen-sensitivity and response speed of porous TiO2 films are improved compared with films without pores. Both the sensitivity and response speed increase with the increasing of pore diameter and pore density. Oxygen-sensitivity reaches 3 order of magnitude at 800 ℃. Its response time from H2/N2 to O2/N2 atmosphere and vice versa is about 0.11 s and 0.12 s respectively. Although the sensitivity and response speed increase, the resistance-temperature properties of porous films are not notably improved with the increasing of the content of PEG.     

Preparation and properties of alloy 2618 reinforced by submicron AIN particles

An attempt was made to explore the possibility of fabricating AA2618 reinforced by submicron AIN particles. The results show that the addition of AIN particles decreases remarkably the grain size of the alloy. The 2618-AIN dispersion-strengthened alloy has the same strength as AA2618 at room temperature in the T6 state, but exhibits significantly higher strength after isothermal exposure at 200 °C for 100 h. The strength of the dispersion-strengthened alloy at elevated temperatures was greater than that of AA2618.     

The effects of substrate compositions on adhesion of diamond films deposited on Fe-base alloys

Diamond deposition on a series of ferrous alloy substrates has been examined in a microwave plasma enhanced chemical vapor deposition reactor. The results show that the nucleation, growth, and adhesion properties of the diamond are strongly dependent on the types and relative concentrations of the alloy elements in the substrates. Along with high nucleation densities, continuous and adherent diamond films have been successfully fabricated on the Al-modified alloy substrates, even in the absence of inter-layers or nucleation enhancing surface pre-treatment. The mechanism is preliminarily clarified regarding the delicate competition and balance between the base metal and the alloying elements in terms of their activation and deactivation ability on catalyzing graphite formation during deposition process.     

Characteristics of ITO films deposited on a PET substrate under various deposition conditions

ITO films, with a thickness of 150 nm to 160 nm, were deposited on an unheated hard coated PET substrate or non-alkali glass substrate via dc magnetron sputtering. Depositions were carried out under the following various conditions: total gas pressure (P_tot), dc sputtering power, target — substrate (T-S) distance, and O₂ or H₂ addition ratio. The ITO coated on the PET substrate showed relatively lower resistivity than that of the ITO coated on a glass substrate. Relatively small changes in the resistance (ΔR/R₀=0.4) of the films were obtained for each deposition condition for the ITO/PET deposited under a sputtering power of 70 W, P_tot of 0.5 Pa, and T-S of 50 mm. It has been confirmed that the results of the electrical property showed concurrence with the results of the bending test. Specifically, the films that have a good electrical property showed only a small change in resistance to the increasing cycle number for each deposition condition. Therefore, it can be assumed that the increased resistance of the ITO films could be due to the formation of micro defects such as micro-cracks and the micro detachment of the ITO film from the flexible PET substrate.     

The effect of substrate bias voltage on PbTe films deposited by magnetron sputtering

The PbTe films were deposited onto ITO glass substrate by radio frequency magnetron sputtering. Effect of external direct current electrical field applied between substrate and target on the quality of films was investigated. Stylus surface profile, X-ray diffraction (XRD), atomic force microscope (AFM) and Fourier transform infrared spectroscopy (FTIR) were used to characterize the films. The film thickness was measured by a conventional stylus surface profile. The crystal structure and lattice parameters of films were determined by using XRD. The surface morphology of the films was measured by AFM. The absorption coefficients and optical band gaps of films were found from FTIR. The sheet resistance of the samples was measured with a four-point probe and the resistivity of the film was calculated. All the obtained films were highly textured with a strong (2 0 0) orientation. With increasing bias voltage to −30 V, the property of crystal structure, surface morphology and absorption coefficients and resistivity were improved. However, further increase of substrate bias leads to transformation of the property.     

镍改性层增强铜基底沉积金刚石膜的形核(英文)

在铜基底溅射约100nm厚的镍改性层,然后置入纳米金刚石悬浮液中超声震荡加载籽晶,随后在热丝化学气相沉积设备中制备出晶体颗粒接近热力学平衡形态的高质量金刚石膜,其中sp2碳相含量低于5.56%。分别采用激光拉曼光谱、扫描电镜与X射线衍射对金刚石膜的形核与生长进行研究。实验结果表明:在溅射有镍改性层的铜基底上,金刚石的形核密度比在无改性层的铜基底上的形核密度高10倍。镍改性层的增强机制主要来源于两个方面:镍改性层的纳米级粗糙表面增强金刚石籽晶颗粒的吸附;镍改性层的强催化效应加速铜基底上金刚石形核生长所需的石墨过渡层的形成,从而促进金刚石的快速形核。