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美军将无人系统作为其保持军事技术优势的主要手段之一。当前,美军现役各类无人系统已具备较强作战能力,但仍在不断应用新技术、快速发展新型号,推出全新的作战构想和作战概念,其中“跨域”思想强调无人系统在作战中的跨域协同,以实现在未来战场上无人系统作战能力的“倍增”。本文重点研究美军无人系统的跨域协同作战,梳理了美军当前关于无人系统跨域协同作战的顶层规划;从作战体系的高度,对美军无人系统跨域协同的测试与运用进行研究;对美军无人系统跨域协同作战的关键技术发展趋势进行分析;并评估了美军无人系统在跨域协同作战体系下的作战效能。 相似文献
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联合建模与仿真系统(Joint Modeling and Simulation System,JMASS)项目是美军三个"J"类(JMASS、JWARS、JSIMS)重要项目中的一个,是在美国空军电子战数字评估系统(ECDES)的基础上发展起来的联合项目.开发JMASS项目的目的是在提供可重用的建模与仿真资源库(MSRL)的同时,开发一个标准的数字化建模与仿真体系结构和有关工具集,来支持对电子战环境下的武器系统进行工程级/交战级建模与仿真的分析、开发、采办以及测试与评估.本文围绕JMASS系统的主要特点、组成结构及通过HLA实现互操作等方面进行了深入研究. 相似文献
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论述了美军空间力量的发展及战争需求与应用对空间战理论的影响,从对美军各时期的航天作战条令的分析中,探讨了美军空间战理论的发展脉络,揭示了其发展概貌.阐述了美国GPS导航系统、军事通信卫星系统、天基红外系统等空间力量增强系统的最新进展,介绍了天基空间监视系统和轨道深空成像系统等空间态势感知系统的近况,并预测了美国防御性和进攻性空间对抗系统的发展趋势. 相似文献
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1对美陆军战术的认识美陆军自建军以来经历了大量的战争实践,具有了丰富的作战理论。美军认为,加强对其陆军战术的分析研究,是夺取战斗胜利的关键因素。1.1对美军陆军战术内涵的认识美军对战术的定义是:"战术是对彼此相关的部队的运用和有序安排。""战术级的重点是计划和实施战斗、交战和其它行动,完成战术部队或特遣部队受领的军事目标。美军,1982年版陆军《作战纲要》首次在理论上对战术 相似文献
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总结了美军有人直升机与无人机协同的相关项目的发展概况,分析了协同数据链、协同控制系统等装备的基本能力和实现方式,探讨了协同数据链、数据融合、决策辅助等关键技术的发展趋势及启示,以期为我国相关技术发展和装备研究提供一定的参考。 相似文献
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Switching has been observed in metal?thin-insulator?n-p+ structures, where the thin insulator is SiO2, or polycrystalline silicon. In this letter two alternative structures are discussed in which the n-p+ junction is replaced by a Schottky barrier. In the second device proposed two thin-insulator structures back-to-back are shown to exhibit bidirectional switching. 相似文献
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A new non-volatile memory device is reported. This device is a GaAs m.o.s.f.e.t. with charge storage in the gate in which is a double oxide structure of aluminium oxide and GaAs native oxide, both oxides are grown anodically. The fabrication of the device is described and the results of initial measurements on the charging and charge retention properties are presented. 相似文献
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Low-noise amplifiers for u.h.f. colour t.v. broadcasting translator use have been successfully developed by using 1 ?m gate GaAs m.e.s.f.e.t.s. The obtained performances revealed that a GaAs m.e.s.f.e.t. has low-noise and low intermodulation distortion characteristics, even in the 500?800 MHz frequency range, compared with a Si bipolar transistor. 相似文献
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An experimental study of the low-frequency-noise properties of n-channel epitaxial silicon films on insulator m.o.s. s.o.s. transistors has been performed. The measurements show an excessive noise contribution at drain voltages corresponding to the current-kink effect for temperatures ranging from 4.2 to 300 K. 相似文献
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The optimum noise figures of an m.o.s.f.e.t. at u.h.f. and at pinch-off are calculated using a simplified equivalent circuit. The noise parameters are also determined experimentally. Theory and experiment are shown to be in good agreement. Noise parameters of the m.o.s.f.e.t. for the frequency range 0.1?0.8 GHz are given. 相似文献
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N-channel silicon m.o.s. transistors for h.f. power applications have been fabricated which are optimised for linear amplification. These devices exhibit 2 W output power and 11 dB power gain at 630 MHz in class-A operation. The intercept point for third-order intermodulation distortion is 48dBm, which is considerably more than the same data obtainable with bipolar transistors. 相似文献
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A new monolithic current-controlled oscillator (c.c.o.) has been realised in a j.f.e.t.-bipolar technology. Its main advantages are a highly-linear seven decade frequency range and easy temperature compensation for frequency and output voltage. 相似文献
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《Electronics letters》1967,3(12):550-551
In this letter, the use of the Gunn device as a broadband negative resistance, somewhat analogous to a tunnel diode, is explored. v.h.f. and u.h.f. oscillators are described; the frequency is determined by an external resonant circuit and is very nearly independent of the parameters of the Gunn-effect sample. 相似文献
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Novel configurations using a differential-voltage-controlled current source, differential-voltage-controlled voltage source (d.v.c.c.s./d.v.c.v.s.) as the active building block are described. The configurations assume that the active building block is divided into two independent parts initially. 相似文献
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By using plasma c.v.d. and lift-off, an n-channel m.o.s.f.e.t. with effective channel length of 0.4 ?m has been fabricated. Its main fabrication processes and obtained electrical characteristics are described. 相似文献