Electrodeposited Cr-Doped α-Fe2O3 thin films active for photoelectrochemical water splitting

Polycrystalline hematite (α-Fe₂O₃) Chromium (Cr)-doped thin films were electrodeposited on fluorine-doped tin oxide-coated glass substrates. The electrodeposition bath comprised an aqueous solution containing FeCl₃·6H₂O, NaCl, and H₂O₂.Chromium was added to the electrolyte at such a proportion that the Cr/(Cr + Fe) ratio remained within the 2–8 at. % range. The as-deposited films were subsequently annealed in air at 650 °C for 2 h. The structure and morphological characteristics of the undoped and Cr-doped α-Fe₂O₃ thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV–Vis spectroscopy. Cr doping led the main XRD lines to shift to lower angles, which mostly resulted from substituting Fe³⁺ for Cr⁴⁺ ions that leads to α-Fe₂O₃ lattice contraction. The SEM observations showed that the roughness and aspect of surfaces changed with the Cr doping level. The photoelectrochemical (PEC) performance of the α-Fe₂O₃ films was examined by chronoamperometry and linear sweep voltammetry techniques. The Cr-doped films exhibited greater photoelectrochemical activity than the undoped α-Fe₂O₃ thin films. The highest photocurrent density was obtained for the 8% Cr-doped α-Fe₂O₃ films in 1 M NaOH electrolyte. All the samples achieved their best IPCE at 400 nm. The IPCE values for the 8 at.% Cr-doped hematite films were 20-fold higher than that of the undoped sample.This Cr-doped hematite films ‘excellent photoelectrochemical performance was mainly attributed to improved charge carrier properties. Such high photoactivity was attributed to the large active surface area and increased donor density caused by increasing the Cr doping in the α-Fe₂O₃ films.     

Nanostructured hematite photoelectrochemical electrodes prepared by the low temperature thermal oxidation of iron

We report on a facile low temperature method for the preparation of high surface area, nanostructured α-Fe₂O₃ (hematite) thin films and their application as photoelectrochemical (PEC) water splitting electrodes. The hematite films are fabricated by thermal oxidation in air of DC sputter deposited iron films at temperatures as low as 255 °C. This method results in films with a higher surface area than typically obtained by directly sputtering α-Fe₂O₃. It is shown that beyond a minimum iron thickness, α-Fe₂O₃ nanowires result upon thermal treatment in atmospheric conditions. Structural and optical characteristics of the resulting films are analyzed. The oxidation process is studied in detail and correlated to the photoelectrical properties. The Fe films oxidize in stages via Fe-oxide layers of increasing oxidation states. Resulting photoelectrochemical performance of fully oxidized films is a balance between optical absorption and charge collection, which varies with film thickness. The optimum film achieved a net photocurrent density of 0.18 mA/cm² in 1 M NaOH at 1.23 V vs. RHE under simulated AM1.5 sunlight, amongst the highest values reported for undoped hematite films produced at low temperature.     

Impedance characterization of dye-sensitized solar cells in a tandem arrangement for hydrogen production by water splitting

The present work reports the photoelectrochemical characterization of a dye-sensitized solar cell (DSC) to assist water split in a photoelectrochemical (PEC) cell. Performance parameters were extracted from standard current–voltage characteristic (I–V) and the charge transfer phenomena occurring at different interfaces of the DSC were evaluated by electrochemical impedance spectroscopy (EIS). The DSC comprised the N719 dye and a robust electrolyte (1-propyl-3-methylimidazolium iodide in guanidinium thiocyanate additive). At 1 sun illumination the DSC yielded a short-circuit photocurrent density of 14.9 mA cm⁻², an open-circuit voltage of 0.797 V, a fill factor of 0.712 and an overall efficiency of 8.5%. Different PEC systems based on silicon-doped and undoped hematite photoelectrodes were considered. The required additional anodic bias necessary for actual water cleavage was supplied by two DSCs in series operating just under open-circuit voltage (1.56 V), allowing a conversion efficiency of about 1.12% for the silicon-doped hematite deposited by APCVD, 0.51% for the silicon-doped prepared by USP and 0.12% for the undoped hematite sample.     

Plasma-chemical reduction of iron oxide photoanodes for efficient solar hydrogen production

We demonstrate the effect of hydrogen plasma treatment on hematite films as a simple and effective strategy for modifying the existing substrate to improve significantly the band edge positions and photoelectrochemical (PEC) performance. Plasma treated hematite films were consist of mixed phases (Fe₃O₄:α-Fe₂O₃) which was confirmed by XPS and Raman analysis, treated films also showed higher absorption cross-section and were found to be a promising photoelectrode material. The treated samples showed enhance photocurrent densities with maximum of 3.5 mA/cm² at 1.8 V/RHE and the photocurrent onset potentials were shifted from 1.68 V_RHE (untreated) to 1.28 V_RHE (treated). Hydrogen plasma treatment under non-equilibrium conditions induced a valence dynamics among Fe centers in the sub-surface region that was sustained by the incorporation of hydrogen in the hematite lattice as supported by the density functional theory calculations.     

CdSe quantum dots sensitized nanoporous hematite for photoelectrochemical generation of hydrogen

A novel system of CdSe quantum dots (QDs) sensitized porous hematite (α-Fe₂O₃) films has been investigated as a potential photoelectrode for hydrogen generation via photoelectrochemical (PEC) splitting of water. Before sensitization, nanoporous hematite thin films were prepared by spray pyrolysis. Characterizations for crystalline phase formation, crystallite size, absorption spectra, and flatband potential were carried out to analyze PEC data. Loading time of sensitizer to hematite thin films was found to be crucial in affecting its PEC properties. Film having sensitizer loading time as 42 h exhibited best photocurrent density of 550 μA cm⁻² at 1.0 V versus SCE. Current study, for the first time, explores the possibility of using low band gap QDs sensitization on a low band gap film, hematite in PEC splitting of water.     

A note on the Hall mobility and carrier concentration in pyrite thin films

This note presents results on Hall effect characteristics (mobility and density of majority charge carriers) of undoped p-type and n-doped pyrite thin films. Carrier mobilities between 200 and 0.07 cm²/Vs have been measured in undoped p-type films. Doped n-type films present values which vary from 200 to 0.1 cm²/Vs. The corresponding carrier densities change from 2×10¹⁸ to 10²² cm⁻³ in p-type films and from 6×10¹⁷ to 10²¹ cm⁻³ in n-type films. These results reinforce the physical basis and conclusions of the modelling of pyrite solar cells accomplished by Altermatt et al. (Sol. Energy Mater. Sol. Cells 71 (2002) 181).     

Augmented photoelectrochemical response of CdS/ZnS quantum dots sensitized hematite photoelectrode

A visible light active and stable photoelectrode has been developed by depositing a passivating layer of ZnS QDs on CdS QDs sensitized hematite photoelectrode (Hematite‐CdS/ZnS) for PEC generation of hydrogen. Photoelectrochemical properties, in terms of stability and efficiency, have been investigated on the various hematite photoelectrodes sensitized with CdS QDs and CdS/ZnS QDs by varying number of SILAR cycles. I–V characteristics show that two layers of ZnS QDs deposited over three layers of CdS could enhance PEC response of hematite and efficiency by a factor of 3 and 11 respectively. Chronoamperometry measurement ensures that after adding a layer of ZnS QDs, CdS sensitized hematite film turns out to be a stable photoelectrode in the electrolyte. Prepared photoelectrodes have been characterized by XRD, SEM, HRTEM and UV–Vis spectrophotometer for various structural, morphological and optical properties to analyze PEC results. Mott–Schottky analysis and incident photon to current conversion efficiency (IPCE) measurements of sensitized hematite photoelectrode supported the improved PEC response of CdS/ZnS QDs sensitized hematite thin films. Copyright © 2016 John Wiley & Sons, Ltd.     

A new catalyst of AlCu@ZnO for hydrogen evolution reaction

Thin films of undoped ZnO, Al-doped ZnO, Cu-doped ZnO, and AlCu@ZnO deposited on indium tin oxide were performed by the sol-gel spin coating method. The prepared ZnO thin films were investigated for their structural and electrical properties after annealing at 500 °C for 1 h. ZnO thin films were characterized by electrochemical impedance spectroscopy, linear sweep voltammetry, scanning electron microscopy, Fourier transform infrared spectroscopy and Mott Schottky. According to the results obtained from the Nyquist diagrams of the ZnO thin films, the resistance value was found to decrease with binary doping and the resistance value was found to be lowest in AlCu@ZnO doped thin film containing 0.01 M Al and 0.1 M Cu. As ZnO thin films go to cathodic potentials, it is seen that the cathodic current value of ZnO with undoped is the lowest. It has been found that only Al and Cu doping showed less cathodic current than double doping.     

RF sputter deposition of the high-quality intrinsic and n-type ZnO window layers for Cu(In,Ga)Se2-based solar cell applications

Transparent ZnO films were prepared by rf magnetron sputtering, and their electrical, optical, and structural properties were investigated under various sputtering conditions. Aluminum-doped n-type(n-ZnO) and undoped intrinsic-ZnO (i-ZnO) layers were deposited on a glass substrate by incorporating different targets in the same reaction chamber. The n-ZnO films were strongly affected by argon ambient pressure and substrate temperature, and films deposited at 2 mTorr and 100°C showed superior properties in resistivity, transmission, and figure of merit (FOM). The sheet resistance of ZnO film was less dependent on film thickness when the substrate was heated during deposition. These positive effects of elevated substrate temperature are presumably attributed to the rearrangement of the sputtered atoms by the heat energy. Also, the films are electrically uniform through the 5 cm×5 cm substrate. The maximum deviation in sheet resistance is less than 10%. All of the films showed strong (0 0 2) diffraction peak near 2θ =34°. The undoped i-ZnO films deposited in the mixture of argon and oxygen gases showed high transmission properties in the visible range, independent of the Ar/O₂ ratio, while resistivity rose with increased oxygen partial pressure. The Cu(In,Ga)Se₂ solar cells, incorporating bi-layer ZnO films (n-ZnO/i-ZnO) as window layer, were finally fabricated. The fabricated solar cells showed 14.48% solar efficiency under AM 1.5 conditions (100 mW/cm²).     

Microwave-assisted low temperature fabrication of nanostructured α-Fe2O3 electrodes for solar-driven hydrogen generation

It is demonstrated for the first time that significant enhancement of photoelectrochemical performance could be achieved by using microwave-assisted annealing for the fabrication of α-Fe₂O₃ thin films. The process can also lead to significant energy savings (>60% when compared with conventional methods). Different types of Fe thin films were oxidized using both microwave and conventional heating techniques. The photoelectrochemical performance of electrodeposited, undoped and Si-doped iron oxide samples showed that microwave-annealing resulted in superior structural and performance enhancements. The photocurrent densities obtained from microwave annealed samples are among the highest values reported for α-Fe₂O₃ photoelectrodes fabricated at low temperatures and short times; the highest photocurrent density at 0.55 V vs. V_Ag/AgCl, before the dark current onset, was 450 μA cm⁻² for the Si-doped films annealed at 270 °C for 15 min using microwave irradiation (and 180 μA cm⁻² at 0.23 V vs. V_Ag/AgCl) while conventional annealing at the same temperature resulted in samples with negligible (3 μA cm⁻²) photoactivity. In contrast, a 450 °C/15 min conventional heat treatment only resulted in a film with 25% lower photocurrent density than that of the microwave annealed sample. The improved performance is attributed to the lower processing temperatures and rapidity of the microwave method that help to retain the nanostructure of the thin films whilst restricting the grain growth to a minimum. The lower processing temperature requirements of the microwave process can also open up the possibility of fabricating hematite thin films on conducting, flexible, plastic electronic substrates.     

The structure and photocatalytic studies of N-doped TiO2 films prepared by radio frequency reactive magnetron sputtering

N-doped TiO₂ films were prepared by a radio frequency reactive magnetron sputtering (RF-MS) deposition method from an undoped TiO₂ target in a mixture of Ar/N₂ atmosphere on heated quartz glass substrates. The structures and properties of the N-doped were studied by XRD, Raman, XPS, TEM, ultraviolet (UV)-vis and PL spectroscopy. By analyzing the structures and photocatalytic activities of undoped and N-doped TiO₂ films under ultraviolet and visible light irradiation, the probable photocatalytic mechanism of N-doped TiO₂ films was investigated. Because many oxygen defects are caused in films by nitrogen doping, it is presumed that nitrogen doping and oxygen defect induced the formation of new states closed to the valence band and conduction band, respectively. The cooperation of nitrogen and oxygen defects leads to a significant narrowing of the band gap and greatly improves the absorption in the visible light region. It is found that the degradation efficiencies of N-doped TiO₂ films greatly decreased under ultraviolet irradiation, but slowly improved under visible light irradiation, compared with the undoped TiO₂ film. It is suggested that the N-doped TiO₂ films are formed for the nitrogen to occupy oxygen defect sites directly. The doped nitrogen ions and oxygen defects act as recombination centers that reduce the lifetime of photo-induced electrons and holes, thereby resulting in the decrease of photocatalytic activity under ultraviolet light illumination.     

Nanostructured Ti-doped hematite (α-Fe2O3) photoanodes for efficient photoelectrochemical water oxidation

We present a form of hematite (α-Fe₂O₃) nanostructured architecture suitable for photoelectrochemical water oxidation that is easily synthesized by a pulsed laser deposition (PLD) method. The architecture is a column-like porous nanostructure consisting of nanoparticles 30–50 nm in size with open channels of pores between the columns. This nanostructured film is generated by controlling the kinetic energy of the ablated species during the pulsed laser deposition process. In a comparison with the nanostructured film, hematite thin film was also synthesized by PLD. All of the developed films were successfully doped with 1.0 at% of titanium. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM) and UV–visible spectroscopy were used to characterize the films. To fabricate the photoelectrochemical (PEC) cell, Ti-doped hematite films were used as the working electrode, Ag/AgCl as the reference electrode, platinum wire as the counter electrode and an aqueous solution of 1 M NaOH as the electrolyte. The photovoltaic characteristics of all cells were investigated under AM 1.5G sunlight illumination of 100 mW/cm². The photocurrent density was enhanced by approximately 220% using nanostructured film at 0.7 V versus Ag/AgCl compared to hematite thin film, and the highest photocurrent density of 2.1 mA/cm² at 0.7 V/Ag/AgCl was obtained from the 1.0 at% Ti-doped hematite nanostructured film. The enhanced photocurrent density is attributed to its effective charge collection due to its unique column-like architecture with a large surface area.     

Metal contact properties of poly3-octylthiophene thin films

Chemically synthesized undoped poly3-octylthiophene (P3OT) was deposited as thin films on conducting glass substrates by drop casting. Doping state of P3OT was obtained by adding FeCl₃ into the original P3OT solution. A qualitative explanation of the electrical contact behavior of the P3OT films was given by a band diagram made from optical absorbance spectra and electrochemical current–voltage curves of the polymeric films. Gold contacts on both undoped and doped P3OT films give an ohmic contact. Silver/P3OT contact shows a rectifying behavior; the forward current is 500 times the reverse current at 0.5 V. Aluminum also forms rectifying contact with the two types of P3OT films, although the experimental rectification ratio is lower than that of the silver. The I–V curves of rectifying contacts were analyzed with Schottky equation and different diode parameters were obtained.     

Spray pyrolytically deposited nanoporous Ti doped hematite thin films for efficient photoelectrochemical splitting of water

Nanoporous hematite (α-Fe₂O₃) thin films doped with Ti⁴⁺ deposited by spray-pyrolysis were successfully used in photoelectrochemical splitting of water for solar hydrogen production. X-ray diffraction, field emission scanning electron microscopy, UV–visible absorption and photoelectrochemical studies have been performed on the undoped and Ti⁴⁺ doped hematite thin films. Morphology of α-Fe₂O₃ thin films was observed to be nanoporous, with increased porosity (pore size ∼12 to 20 nm) on increasing doping concentration. A significant decrease in the bandgap energy from 1.95 to 1.27 eV was found due to doping. α-Fe₂O₃ film doped with 0.02 M Ti⁴⁺ ions exhibited best solar to hydrogen conversion efficiency (photoconversion efficiency) of 1.38% at 0.5 V/SCE. Highest photocurrent densities of 0.34 mA/cm² at zero bias and 1.98 mA/cm² at 0.5 V/SCE were obtained by incorporating 0.02 M Ti⁴⁺ in α-Fe₂O₃, which are significantly larger than earlier reported values. Donor density (30.8 × 10²⁰ cm⁻³) and flatband potential (−1.01 V/SCE) obtained were also maximum for this sample. Hydrogen collected in 1 hr at Pt electrode with the best photoelectrode was 2.44 mL with 150 mW/cm² visible light source.     

Chemical and electronic interface structure of spray pyrolysis deposited undoped and Al-doped ZnO thin films on a commercial Cz-Si solar cell substrate

We have studied differences in the interface between undoped and Al-doped ZnO thin films deposited on commercial Si solar cell substrates. The undoped ZnO film is significantly thicker than the Al-doped film for the same deposition time. An extended silicate-like interface is present in both samples. Transmission electron microscopy (TEM) and photoelectron spectroscopy (PES) probe the presence of a zinc silicate and several Si oxides in both cases. Although Al doping improves the conductivity of ZnO, we present evidence for Al segregation at the interface during deposition on the Si substrate and suggest the presence of considerable fixed charge near the oxidized Si interface layer. The induced distortion in the valence band, compared to that of undoped ZnO, could be responsible for considerable reduction in the solar cell performance.     

DC conduction mechanism in polyvinyl alcohol films doped with potassium thiocyanate

The current–voltage characteristics of pure polyvinyl alcohol (PVA) films and those doped with potassium thiocyanate (KSCN) are studied as a function of film temperature and dopant concentration. The conduction mechanisms operative in the films in different temperature and voltage ranges are estimated from the behaviour of log I versus V^1/2 plots (I=current, V=voltage). For undoped (pure) films, the conduction mechanism appears to be essentially a Schottky type. On doping, there is considerable influence on the type of conduction mechanism, especially at lower temperatures. At higher temperatures, however, there is no significant effect of doping on the conduction mechanism.     

Electrodeposited zirconium-doped α-Fe2O3 thin film for photoelectrochemical water splitting

Nanostructured hematite thin films were doped with zirconium successfully using electrodeposition method for their implementation as photoanode in photoelectrochemical (PEC) cell for hydrogen generation. XRD, Raman, XPS, SEM and UV-visible spectroscopy techniques were used to characterize the thin films. Highest photocurrent density of 2.1 mA/cm² at 0.6 V/SCE was observed for 2.0 at.% Zr⁴⁺ doped α-Fe₂O₃ sample with solar to hydrogen conversion efficiency of 1.43%. Flatband potential (−0.74 V/SCE) and donor density (2.6 × 10²¹ cm⁻³) were found to be maximum for the same sample. These results suggest substantial potential of hematite thin films with controlled doping of zirconium in PEC water splitting applications.     

Effect of platinum co-sputtering on characteristics of amorphous vanadium oxide films

The effect of platinum co-sputtering on the characteristics of amorphous V₂O₅ films, grown by dc reactive sputtering, is investigated. The co-sputtering process influences the growth mechanism as well as the characteristics of the V₂O₅ films. Glancing-angle X-ray diffraction (GXRD), transmission electron microscopy (TEM), and Fourier transform infrared (FT-IR) results indicate that the microstructure of the V₂O₅ films is affected by the rf power of the co-sputtered platinum. In addition, it is found that the platinum co-sputtered V₂O₅ cathode film exhibits better cycleability than an undoped V₂O₅ cathode film. This is due to the absence of short-range order, which is generally present in undoped V₂O₅ cathode films. Possible explanations are given to describe the dependence of the cycleability V₂O₅ films on the platinum rf power and the growth mechanism of the V₂O₅ film.     

Structure of PECVD Si:H films for solar cell applications

The structure of undoped SiH films and solar cells deposited under different hydrogen concentration and substrate temperatures were studied. The characterization techniques used were XRD, Raman spectroscopy, TEM, optical absorption, and hydrogen effusion. The high concentration films were amorphous in the as-deposited state but crystallized upon annealing at 700°C. Middle and low concentration films were nanocrystalline (nc) and remained nc up to 800°C annealing. A theoretical explanation is given for the stability of these films. Such films, on glass substrates, had optical absorption spectra close to those of amorphous material. The solar cell samples, showed some nc morphology in all-concentration states.     

Deposition of ZrO2 film by liquid phase deposition

In this study, undoped ZrO₂ thin films were deposited on single-crystal silicon substrates using liquid phase deposition. The undoped films were formed by hydrolysis of zirconium sulfate (Zr(SO₄)₂·4H₂O) in the presence of H₂O. A continuous oxide film was obtained by controlling adequate (NH₄)₂S₂O₈ concentration. The deposited films were characterized by SEM, FT-IR, XRD and DTA. Typically, the films showed excellent adhesion to the substrate with uniform particle diameter about 150 nm. The thicknesses of ZrO₂ film were about 200 nm after 10 h deposition at 30 °C. These films shows single tetragonal phase after heat treated at 600 °C. High annealing temperature (e.g. 750 °C) may result in the phase transformation of (t)-ZrO₂ into (m)-ZrO₂.