Improved the efficiency of small molecule organic solar cell by double anode buffer layers

Small molecule organic solar cell with an optimized hybrid planar-mixed molecular heterojunction (PM-HJ) structure of indium tin oxide (ITO)/ poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT: PSS) doped with 4 wt% sorbitol/ pentacene (2 nm)/ copper phthalocyanine (CuPc) (10 nm)/ CuPc: C₆₀ mixed (20 nm)/ fullerene (C₆₀) (20 nm)/ bathocuproine (BCP) (10 nm)/Al was fabricated. PEDOT: PSS layer doped with 4 wt% sorbitol and pentacene layer were used as interlayers between the ITO anode and CuPc layer to help the hole transport. And then the short-circuit current (J_sc) of solar cell was enhanced by inserting both the PEDOT: PSS (4 wt% sorbitol) and the pentacene, resulting in a 400% enhancement in power conversion efficiency (PCE). The maximum PCE of 3.9% was obtained under 1sun standard AM1.5G solar illumination of 100 mW/cm².     

Efficiency enhancement of polymer solar cells by incorporating a self-assembled layer of silver nanodisks

We report the efficiency enhancement of polymer solar cells by incorporating a silver nanodisks' self-assembled layer, which was grown on the indium tin oxide (ITO) surface by the electrostatic interaction between the silver particles and modified ITO. Polymer solar cells with a structure of ITO (with silver nanodisks)/poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) (Clevious P VP AI 4083)/poly(3-hexylthiophene):[6,6]-phenyl-C61 butyric acid methyl ester (P3HT:PC₆₁BM)/LiF/Al exhibited an open circuit voltage (V_OC) of 0.61±0.01 V, short-circuit current density (J_SC) of 9.24±0.09 mA/cm², a fill factor (FF) of 0.60±0.01, and power conversion efficiency (PCE) of 3.46±0.07% under one sun of simulated air mass 1.5 global (AM1.5G) irradiation (100 mW/cm²). The PCE was increased from 2.72±0.08% of the devices without silver nanodisks to 3.46±0.07%, mainly from the improved photocurrent density as a result of the excited localized surface plasmon resonance (LSPR) induced by the silver nanodisks.     

Thin film solar cells of CdS/PbS chemically deposited by an ammonia-free process

A new type of solar cell with structure glass/ITO/CdS/PbS/conductive graphite was constructed and studied. Both window (CdS) and absorption (PbS) layers were deposited by means of the chemical bath deposition (CBD) technique. The maximum temperature employed during the solar cell processing was 70 °C and it did not include any post-treatment. In case of the CdS window layer, complexing agents alternative to ammonia were employed in the CBD process and their effects on the CdS films properties were studied. The solar cells are photosensitive in a large spectral range (all visible and near infrared regions); the cell with the area of 0.16 cm² without any special treatment has shown the values of open-circuit voltage V_oc of 290 mV and short circuit current J_sc of 14 mA/cm² with the efficiency η=1.63% (fill factor FF is 0.36) under illumination intensity of 900 W/m². It was found that the CBD-made PbS layer has a certain degree of porosity, which favorably affects its applicability in solar cell construction. The possible ways of device optimization, and in particular, the effect of the PbS grain size on its performance are discussed.     

Highly durable inverted-type organic solar cell using amorphous titanium oxide as electron collection electrode inserted between ITO and organic layer

An indium tin oxide/titanium oxide/[6,6]-phenyl C₆₁ butyric acid methyl ester:regioregular poly(3-hexylthiophene)/poly(3,4-ethylenedioxylenethiophene):poly(4-styrene sulfonic acid)/Au type organic solar cell (ITO/TiO_x/PCBM:P3HT/PEDOT:PSS/Au) with 1 cm² active area, which is called “inverted-type solar cell”, was developed using an ITO/amorphous titanium oxide (TiO_x) electrode prepared by a sol-gel technique instead of a low functional electrode such as Al. The power conversion efficiency (η) of 2.47% was obtained by irradiating AM 1.5G-100 mW cm⁻² simulated sunlight. We found that a photoconduction of TiO_x by irradiating UV light containing slightly in the simulated sunlight was required to drive this solar cell. The device durability in an ambient atmosphere was maintained for more than 20 h under continuous light irradiation. Further, when the air-stable device was covered by a glass plate with a water getter sheet which was coated by an epoxy-UV resin as sealing material, the durability was still higher and over 96% of relative efficiency was observed even after continuous light irradiation for 120 h.     

Nano-structured Cu2O solar cells fabricated on sparse ZnO nanorods

Nano-structured Cu₂O/ZnO nanorod (NR) heterojunction solar cells fabricated on indium tin oxide (ITO)-coated glass are studied. Substrate film and NR density have a strong influence on the preferred growth of the Cu₂O film. The X-ray diffractometer (XRD) analysis results show that highly (2 0 0)-preferred Cu₂O film was formed when plating on plain ITO substrate. However, a highly (1 1 1)-preferred Cu₂O film was obtained when plating on sparse ZnO NRs. SEM, TEM and XRD studies on sparse NR samples indicate that the Cu₂O nano-crystallites mostly initiate its nucleation on the peripheral surfaces of the ZnO NRs, and are also highly (1 1 1)-oriented. Solar cells with ZnO NRs yielded much higher efficiency than those without. In addition, ZnO NRs plated on a ZnO-coated ITO glass significantly improve the shunt resistance and open-circuit voltage (V_oc) of the devices, with consistently much higher efficiency obtained than when ZnO NRs are directly plated on ITO film. However, longer NRs do not improve the efficiency due to low short-circuit current (J_sc) and slightly higher series resistance. The best conversion efficiency of 0.56% was obtained from a Cu₂O/ZnO NRs heterojunction solar cell fabricated on a 80 nm ZnO-coated ITO glass with V_oc=0.514 V, J_sc=2.64 mA/cm² and 41.5% fill factor.     

SnPc:C60 bulk heterojunction organic photovoltaic cells with MoO3 interlayer

Infrared sensitive small molecule organic photovoltaic cells were fabricated using a tin (II) phthalocyanine (SnPc) and C₆₀ bulk heterojunction layer. Molybdenum oxide (MoO₃) was used as an interlayer between the ITO anode and light absorbing layers. We found that the short-circuit current of the photovoltaic cells with MoO₃ interlayer was substantially enhanced, resulting in a 45% enhancement in power conversion efficiency. The maximum power conversion efficiency is 1.31% under 1 sun standard AM1.5G solar illumination of 100 mW/cm².     

Low bandgap carbazole copolymers containing an electron-withdrawing side chain for solar cell applications

A new series of low bandgap carbazole copolymers containing an electron-withdrawing moiety as a side chain, via Suzuki, Yamamoto, and Stille polymerization reactions has been synthesized. Their bandgaps and molecular energy levels can be tuned by copolymerizing with different conjugated electron-donating units. The resulting copolymers have low optical and electrochemical bandgaps. The optical bandgaps of the copolymers range from 1.79 to 1.24 eV. In order to investigate their photovoltaic properties, polymer solar cell devices based on low bandgap copolymers were fabricated with a structure of ITO/PEDOT:PSS/copolymers:PCBM/Al, under the illumination of AM 1.5 G, 100 mW/cm². The power conversion efficiencies (PCE) of the polymer solar cells based on these low bandgap copolymers were measured. The best performance was obtained by using PC-CARB as the electron donor and 6,6-phenyl C₇₁-butyric acid methyl ester (PC₇₁BM) as the electron acceptor. The PCE of the solar cell based on PC-CARB/P₇₁CBM (1:4) was 1.27% with an open-circuit voltage (V_oc) of 0.65 V, and a short-circuit current (J_sc) of 6.69 mA/cm².     

Effect of solution processed graphene oxide/nickel oxide bi-layer on cell performance of bulk-heterojunction organic photovoltaic

We report the solution processed graphene oxide (GO), NiO_x and GO/NiO_x bi-layer used as an anode interfacial layer in organic bulk-heterojunction solar cells. The bulk-heterojunction solar cells using GO, NiO_x and GO/NiO_x bi-layer exhibited the conversion efficiency of 2.33%, 3.10% and 3.48%, respectively. The cell efficiency is correlated with the matching of energy levels between ITO, hole transport layer and P3HT and thus a well-matched stack layer of ITO/GO/NiO_x/P3HT:PCBM/LiF/Al shows the best cell efficiency of 3.48% with the J_SC of 8.71 mA/cm², V_OC of 0.602 V and FF of 66.44%.     

Dye-sensitized, nano-porous TiO2 solar cell with poly(acrylonitrile): MgI2 plasticized electrolyte

Dye-sensitized solar cells are promising candidates as supplementary power sources; the dominance in the photovoltaic field of inorganic solid-state junction devices is in fact now being challenged by the third generation of solar cells based on dye-sensitized, nano-porous photo-electrodes and polymer electrolytes. Polymer electrolytes are actually very favorable for photo-electrochemical solar cells and in this study poly(acrylonitrile)-MgI₂ based complexes are used. As ambient temperature conductivity of poly(acrylonitrile)-salt complexes are in general low, a conductivity enhancement is attained by blending with the plasticizers ethylene carbonate and propylene carbonate. At 20 °C the optimum ionic conductivity of 1.9 × 10⁻³ S cm⁻¹ is obtained for the (PAN)₁₀(MgI₂)_n(I₂)_n/10(EC)₂₀(PC)₂₀ electrolyte where n = 1.5. The predominantly ionic nature of the electrolyte is seen from the DC polarization data. Differential scanning calorimetric thermograms of electrolyte samples with different MgI₂ concentrations were studied and glass transition temperatures were determined. Further, in this study, a dye-sensitized solar cell structure was fabricated with the configuration Glass/FTO/TiO₂/Dye/Electrolyte/Pt/FTO/Glass and an overall energy conversion efficiency of 2.5% was achieved under solar irradiation of 600 W m⁻². The I-V characteristics curves revealed that the short-circuit current, open-circuit voltage and fill factor of the cell are 3.87 mA, 659 mV and 59.0%, respectively.     

Polymer photovoltaic devices using highly conductive poly(3,4-ethylenedioxythiophene-methanol) electrode

In this work, modified poly(3,4-ethylenedioxythiophene) (PEDOT) was used as an anode in polymer photovoltaic devices (PVDs) based on poly(3-hexylthiophene) (P3HT):[6,6]-phenyl-C₆₀-butyric acid methyl ester (PCBM). We synthesized poly(3,4-ethylenedioxythiophene methanol) (PEDTM) with a transmittance of 87% (at 510 nm) and a conductivity of 700 S/cm. PEDTM was applied in photovoltaic devices as a hole transporting layer on indium-tin oxide (ITO) electrode as well as a direct anode layer. PVDs with PEDTM as hole transporting layers on ITO showed a very high short-circuit density of 14.87 mA/cm² and power conversion efficiency of 2.67% under an illumination of AM 1.5 G (100 mW/cm²). In addition, we also fabricated ITO-free PVDs using PEDTM as an anode, which exhibited a performance of 0.61% with a result of J_sc of 4.48 mA/cm², V_oc of 0.51 V, and FF of 27%.     

Low temperature deposition of high open-circuit voltage (>1.0 V) p-i-n type amorphous silicon solar cells

P-i-n type hydrogenated amorphous silicon (a-Si:H) solar cells were deposited by the radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) process at a low substrate temperature of 125 °C, which is compatible with low-cost poly (ethylene terephthalate) (PET) plastic substrates. Wide band gap (E_opt>1.88 eV) intrinsic a-Si:H films were achieved before the onset of the microcrystalline regime by changing the hydrogen dilution ratios. On the other hand, the structural, optical and electrical properties of p-type hydrogenated amorphous silicon carbide (p-a-SiC:H) window layers have been optimized at 125 °C. High quality p-a-SiC:H film with high optical band gap (E₀₄=2.02 eV) and high conductivity (σ_d=1.0×10⁻⁷ S/cm) was deposited at ‘low-power regime’ under low silane flow rates and high H₂ dilution conditions. With the combination of wide band gap p-a-SiC:H window layers and intrinsic a-Si:H layers, a high V_oc of 1.01 V (efficiency=5.51%, FF=0.72, J_sc=7.58 mA/cm²) was obtained for single junction a-Si:H p-i-n solar cell at a low temperature of 125 °C. Finally, flexible a-Si:H solar cell on PET substrate with efficiency of 4.60% (V_oc=0.98 V, FF=0.69, J_sc=6.82 mA/cm²) was obtained.     

CuInS2-Poly(3-(ethyl-4-butanoate)thiophene) nanocomposite solar cells: Preparation by an in situ formation route, performance and stability issues

In this contribution we present an in situ method for the preparation of CuInS₂-poly(3-(ethyl-4-butanoate)thiophene) (P3EBT) nanocomposite layers and their application in nanocomposite solar cells. A precursor solution containing copper and indium salts, thiourea and the conjugated polymer was prepared in pyridine, which was coated onto glass/ITO substrates followed by a heating step at 180 °C. The heating step induced the formation of the CuInS₂ nanoparticles homogeneously dispersed in the conjugated polymer matrix. The formation of the nanocomposite was investigated in situ by X-ray scattering techniques and TEM methods showing that nano-scaled CuInS₂ was formed. By addition of small amounts of zinc salt to the precursor solution, zinc containing CuInS₂ (ZCIS) was formed. ZCIS-P3EBT active layers exhibited higher V_OC than CuInS₂-P3EBT layers and showed efficiencies of about 0.4%. Additionally the stability of the solar cells was tested over a time scale of 172 h.     

A highly efficient light-trapping structure for thin-film silicon solar cells

A highly efficient light-trapping structure, consisting of a diffractive grating, a distributed Bragg reflector (DBR) and a metal reflector was proposed. As an example, the proposed light-trapping structure with an indium tin oxide (ITO) diffraction grating, an a-Si:H/ITO DBR and an Ag reflector was optimized by the simulation via rigorous coupled-wave analysis (RCWA) for a 2.0-μm-thick c-Si solar cell with an optimized ITO front antireflection (AR) layer under the air mass 1.5 (AM1.5) solar illumination. The weighted absorptance under the AM1.5 solar spectrum (A_AM1.5) of the solar cell can reach to 69%, if the DBR is composed of 4 pairs of a-Si:H/ITOs. If the number of a-Si:H/ITO pairs is up to 8, a larger A_AM1.5 of 72% can be obtained. In contrast, if the Ag reflector is not adopted, the combination of the optimized ITO diffraction grating and the 8-pair a-Si:H/ITO DBR can only result in an A_AM1.5 of 68%. As the reference, A_AM1.5 = 31% for the solar cell only with the optimized ITO front AR layer. So, the proposed structure can make the sunlight highly trapped in the solar cell. The adoption of the metal reflector is helpful to obtain highly efficient light-trapping effect with less number of DBR pairs, which makes that such light-trapping structure can be fabricated easily.     

Effect of organic salt doping on the performance of single layer bulk heterojunction organic solar cell

The effect of organic salt, tetrabutylammonium hexafluorophosphate (TBAPF₆) doping on the performance of single layer bulk heterojunction organic solar cell with ITO/MEHPPV:PCBM/Al structure was investigated where indium tin oxide (ITO) was used as anode, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEHPPV) as donor, (6,6)-phenyl-C61 butyric acid methyl ester (PCBM) as acceptor and aluminium (Al) as cathode. In contrast to the undoped device, the electric field-treated device doped with TBAPF₆ exhibited better solar cell performance under illumination with a halogen projector lamp at 100 mW/cm². The short circuit current density and the open circuit voltage of the doped device increased from 0.54 μA/cm² to 6.41 μA/cm² and from 0.24 V to 0.50 V, respectively as compared to those of the undoped device. The significant improvement was attributed to the increase of built-in electric field caused by accumulation of ionic species at the active layer/electrode interfaces.     

Water and oxygen induced degradation of small molecule organic solar cells

Small molecule organic solar cells were studied with respect to water and oxygen induced degradation by mapping the spatial distribution of reaction products in order to elucidate the degradation patterns and failure mechanisms. The active layers consist of a 30 nm bulk heterojunction formed by the donor material zinc-phthalocyanine (ZnPc) and the acceptor material Buckminsterfullerene (C₆₀) followed by 30 nm C₆₀ for additional absorption. The active layers are sandwiched between 6 nm 4,7-diphenyl-1,10-phenanthroline (Bphen) and 30 nm N,N′-diphenyl-N,N′-bis(3-methylphenyl)-[1,1′-biphenyl]-4,4′-diamine p-doped with C₆₀F₃₆ (MeO-TPD:C₆₀F₃₆), which acted as hole transporting layer. Indium-tin-oxide (ITO) and aluminum served as hole and electron collecting electrode, respectively. Time-of-flight secondary ion mass spectrometry (TOF-SIMS) and X-ray photoelectron spectroscopy (XPS) in conjunction with isotopic labeling using H₂¹⁸O and ¹⁸O₂ provided information on where and to what extent the atmosphere had reacted with the device. A comparison was made between the use of a humid (oxygen free) atmosphere, a dry oxygen atmosphere, and a dry (oxygen free) nitrogen atmosphere during testing of devices that were kept in the dark and devices that were subjected to illumination under simulated sunlight. It was found that water significantly causes the device to degrade. The two most significant degradation mechanisms are diffusion of water through the aluminum electrode resulting in massive formation of aluminum oxide at the BPhen/Al interface, and diffusion of water into the ZnPc:C₆₀ layer where ZnPc becomes oxidized. Finally, diffusion from the electrodes was found to have no or a negligible effect on the device lifetime.     

Large photocurrent generation of an ITO electrode modified with a red copper(II) complex

A film of copper complex [CuL](NO₃)₂ (L = 2,3,8,9-tetraphenyl-1,4,7,10-tetraazacyclododeca-1,3,7,9-tetraene) formed on indium-tin oxide (ITO) coated glass by the solvent evaporation of the acetonitrile solution of the complex onto the ITO substrate, was characterized by ultraviolet-visible absorption spectroscopy, cyclic voltammetry, scanning electron microscopy, and photoelectrochemistry. The photoelectrochemical cell by using [CuL](NO₃)₂ modified ITO, a saturated calomel electrode, and platinum wire as working, reference and counter electrodes respectively in 1 M Na₂SO₄, was found to exhibit a large prompt and reproducible cathodic photocurrent density of 71 μA/cm² under white light irradiation of 70 mW/cm² at an applied potential of −0.4 V, and an incident photon to current efficiency (IPCE) of 1.1% at λ = 660 nm. This Cu(II) complex photosensitizer has advantages of simple synthesis, low-cost, environmentally benign and good photoelectrochemical performance.     

Fabrication and opto-electric properties of ITO/ZnO bilayer films on polyethersulfone substrates by ion beam-assisted evaporation

Transparent conducting oxides bilayer films stacked by one 130-nm-thick indium tin oxide (ITO) top layer and one 75-nm-thick zinc oxide (ZnO) buffer layer were grown onto polyethersulfone (PES) substrates by ion beam-assisted evaporation. The effects of ion energy and ZnO buffer layers on the structural and opto-electric properties of ITO films were initially investigated. The as-deposited ZnO buffer layers show wurtzite (0 0 2) preferred orientation on the PES substrates with ion beam assistance. The results of X-ray diffraction reveal a marked increase in the crystallinity of the ITO films which use ZnO as a buffer layer material. A drop of ∼60% in electrical resistivity of the ITO film on the PES can be achieved by using ZnO buffer layer. The transmittance of the ITO/ZnO bilayer was not deteriorated due to the insertion of ZnO layer. The lowest electrical resistivity of 6.552×10⁻⁴ Ω-cm associated with the transmittance of ∼80% at the wavelength of 550 nm can be obtained for the ITO film on the ZnO-coated PES at ion energy of 60 eV. The ITO films on the ZnO-buffered PES with moderate control of ion energy have a promising future for the application of the contact layers for flexible solar cells.     

Surface texturing of sputtered ZnO:Al/Ag back reflectors for flexible silicon thin-film solar cells

Al-doped zinc oxide/silver (ZnO:Al/Ag) back reflectors for silicon thin-film solar cells with an n-i-p configuration were prepared on flexible stainless steel substrates by dc magnetron sputtering. The surface morphologies of the back reflectors were modified by changing the deposition temperature of the Ag films to improve the light-scattering properties on the back reflectors, resulting in the enhancement of the light-trapping effect in the solar cells. By elevating the deposition temperature from room temperature to 500 °C, the surface roughness of the Ag films increased from 6.62 to 46.64 nm. The films at 500 °C had coarse surface features with irregular grain size distributions between 200 and 900 nm, whereas the films produced at low temperatures below 100 °C had smooth surfaces consisting of small grains between 100 and 200 nm. Even after the 100-nm thick ZnO:Al films were deposited on the modified Ag surfaces, the surface microstructure of the ZnO:Al/Ag bilayers was similar to that of the Ag films. The surface roughness of bilayers increased from 7.12 to 39.30 nm with coarsening the Ag surfaces. Haze factor (a ratio of diffuse reflectance to total reflectance) of Ag films was enhanced remarkably from 59% to 74% in a wide wavelength range from 350 to 1100 nm with increasing the surface roughness of the Ag films from 6.62 nm to 46.64 nm. Enhancement in the haze factor was due to the increase of diffuse reflectance on the Ag films, because the total reflectance did not change much with increasing surface roughness of the Ag films. This increasing roughness indicated that the light scattering from the rough surface of the back reflectors improved. The enhanced light scattering from the back reflectors influenced the performance of the solar cells mainly in terms of the short-circuit current density (J_sc). Compared to the back reflectors with smooth surface features, leading to a J_sc value of 9.94 mA/cm², the back reflectors with large surface roughness improved the J_sc value of the solar cells to 13.36 mA/cm² without detrimental changes in the fill factor (FF) and open circuit voltage (V_oc); they eventually increased the conversion efficiency of the solar cells from 5.59% to 7.60%.     

Optimized resistivity of p-type Si substrate for HIT solar cell with Al back surface field by computer simulation

For HIT (heterojunction with intrinsic thin-layer) solar cell with Al back surface field on p-type Si substrate, the impacts of substrate resistivity on the solar cell performance were investigated by utilizing AFORS-HET software as a numerical computer simulation tool. The results show that the optimized substrate resistivity (R_op) to obtain the maximal solar cell efficiency is relative to the bulk defect density, such as oxygen defect density (D_od), in the substrate and the interface defect density (D_it) on the interface of amorphous/crystalline Si heterojunction. The larger D_od or D_it is, the higher R_op is. The effect of D_it is more obvious. R_op is about 0.5 Ω cm for D_it = 1.0 × 10¹¹/cm², but is higher than 1.0 Ω cm for D_it = 1.0 × 10¹²/cm². In order to obtain very excellent solar cell performance, Si substrate, with the resistivity of 0.5 Ω cm, D_od lower than 1.0 × 10¹⁰/cm³, and D_it lower than 1.0 × 10¹¹/cm², is preferred, which is different to the traditional opinion that 1.0 Ω cm resistivity is the best.     

Temperature dependence of Cu2ZnSn(SexS1−x)4 monograin solar cells

The temperature dependence of open-circuit voltage (V_oc), short-circuit current (I_sc), fill factor (FF), and relative efficiency of monograin Cu₂ZnSn(Se_xS_1−x)₄ solar cell was measured. The light intensity was varied from 2.2 to 100 mW/cm² and temperatures were in the range of T = 175-300 K. With a light intensity of 100 mW/cm²dV_oc/dT was determined to be −1.91 mV/K and the dominating recombination process at temperatures close to room temperature was found to be related to the recombination in the space-charge region. The solar cell relative efficiency decreases with temperature by 0.013%/K. Our results show that the diode ideality factor n does not show remarkable temperature dependence and slightly increases from n = 1.85 to n = 2.05 in the temperature range between 175 and 300 K.