p-Type CuSbS2 thin films by thermal diffusion of copper into Sb2S3

We report the preparation of copper antimony sulfide (CuSbS₂) thin films by heating Sb₂S₃/Cu multilayer in vacuum. Sb₂S₃ thin film was prepared from a chemical bath containing SbCl₃ and Na₂S₂O₃ salts at room temperature (27 °C) on well cleaned glass substrates. A copper thin film was deposited on Sb₂S₃ film by thermal evaporation and Sb₂S₃/Cu layers were subjected to annealing at different conditions. Structure, morphology, optical and electrical properties of the thin films formed by varying Cu layer thickness and heating conditions were analyzed using different characterization techniques. XRD analysis showed that the thin films formed at 300 and 380 °C consist of CuSbS₂ with chalcostibite structure. These thin films showed p-type conductivity and the conductivity value increased with increase in copper content. The optical band gap of CuSbS₂ was evaluated as nearly 1.5 eV.     

A novel one-step electrodeposition to prepare single-phase CuInS2 thin films for solar cells

Copper indium disulfide (CuInS₂) thin films have been successfully prepared on Ni substrates using a novel one-step potentiostatic electrodeposition combined with a potassium hydrogen phthalate (C₈H₅KO₄) complexing agent, accompanied by annealing at 350 °C. Electrodeposition in the solution of Cu and In salts and sodium thiosulfate (Na₂S₂O₃) containing an adequate concentration of C₈H₅KO₄ (e.g., [C₈H₅KO₄]=23 mM) provides thin films comprised of a CuInS₂ single phase as the bulk composition, without forming Cu_xS secondary phases. In addition to the effect on bulk-phase compositions, the adjustment of [C₈H₅KO₄] causes variation in morphology and atomic composition of the film surface. The surface states of the films change from the Cu-rich rough surface at low [C₈H₅KO₄] (15 mM) to the In-rich smooth surface at high [C₈H₅KO₄] (23 mM). The higher [C₈H₅KO₄] induces the grains constructing the film to interconnect and form a densely packed CuInS₂ film without voids and pinholes. The single-phase and void-free CuInS₂ film shows a band gap of 1.54 eV, satisfying the requirement of the absorber layers in solar cells. The electrical properties tests denote its n-type conductivity with a resistivity of 9.6×10⁻⁵ Ω cm, a carrier concentration of 2.9×10²¹ cm⁻³ and a carrier mobility of 22.2 cm² V⁻¹ s⁻¹.     

Evaluation of Sr substituted Nd2CuO4 as a potential cathode material for intermediate-temperature solid oxide fuel cells

The Nd_1.7Sr_0.3CuO₄ (NSCu) material with perovsikite-related structure was synthesized and evaluated as a new cathode for intermediate-temperature solid oxide fuel cells (IT-SOFCs). The crystal structure, thermal expansion, electrical conductivity and electrochemical performance of NSCu have been investigated by X-ray diffraction, a dilatometer, DC four-probe method, AC impedance and cyclic voltammetry (CV) techniques. The polarization resistances of NSCu cathode on Sm-doped ceria (SDC) electrolyte in air were 0.07 Ω cm², 0.24 Ω cm² and 1.60 Ω cm² at 800 °C, 700 °C and 600 °C, respectively. The results demonstrated that both impedance and CV methods are consistent with high exchange current density i₀ (390.7 mA/cm² and 76.1 mA/cm² at 800 °C and 700 °C.), making NSCu a promising cathode material for the IT-SOFCs based on doped ceria electrolytes.     

Sub-micrometer thick CuInSe2 films for solar cells using sequential elemental evaporation

CuInSe₂ thin films were prepared using sequential vacuum evaporation of In, Se and Cu at moderately low substrate temperatures, avoiding any treatment using toxic H₂Se gas. The samples were annealed at 400 °C at a pressure of 10⁻⁵ mbar to form CuInSe₂. Structural, optical, electrical, compositional and morphological characterizations were carried out on these films. We could obtain highly stoichiometric film, using this simple method, without opting for co-evaporation or high substrate temperature for deposition.     

TiO2 thin films - Influence of annealing temperature on structural, optical and photocatalytic properties

Nanostructured TiO₂ thin films were deposited on glass substrates by sol-gel dip coating technique. The structural, morphological and optical characterizations of the as deposited and annealed films were carried out using X-ray diffraction (XRD), Raman spectroscopy, atomic force microscopy (AFM), and UV-vis transmittance spectroscopy. As-deposited films were amorphous, and the XRD studies showed that the formation of anatase phase was initiated at annealing temperature close to 400 °C. The grain size of the film annealed at 600 °C was about 20 nm. The lattice parameters for the films annealed at 600 °C were a = 3.7862 ? and c = 9.5172 ?, which is close to the reported values of anatase phase. Band gap of the as deposited film was estimated as 3.42 eV and was found to decrease with the annealing temperature. At 550 nm the refractive index of the films annealed at 600 °C was 2.11, which is low compared to a pore free anatase TiO₂. The room temperature electrical resistivity in the dark was of the order of 4.45 × 10⁶ ohm-cm. Photocatalytic activity of the TiO₂ films were studied by monitoring the degradation of aqueous methylene blue under UV light irradiation and was observed that films annealed above 400 °C had good photocatalytic activity which is explained as due to the structural and morphological properties of the films.     

Electrochemical deposition of porous Co3O4 nanostructured thin film for lithium-ion battery

Porous Co₃O₄ nanostructured thin films are electrodeposited by controlling the concentration of Co(NO₃)₂ aqueous solution on nickel sheets, and then sintered at 300 °C for 3 h. The as-prepared thin films are characterized by thermogravimetric analysis (TGA), X-ray diffraction (XRD), and scanning electron microscopy (SEM). The electrochemical measurements show that the highly porous Co₃O₄ thin film with the highest electrochemically active specific surface area (68.64 m² g⁻¹) yields the best electrochemical performance compared with another, less-porous film and with a non-porous film. The highest specific capacity (513 mAh g⁻¹ after 50 cycles) is obtained from the thinnest film with Co₃O₄ loaded at rate of 0.05 mg cm⁻². The present research demonstrates that electrode morphology is one of the crucial factors that affect the electrochemical properties of electrodes.     

Ba0.5Sr0.5Co0.8Fe0.2O3 − δ + LaCoO3 composite cathode for Sm0.2Ce0.8O1.9-electrolyte based intermediate-temperature solid-oxide fuel cells

A novel Ba_0.5Sr_0.5Co_0.8Fe_0.2O_3 − δ + LaCoO₃ (BSCF + LC) composite oxide was investigated for the potential application as a cathode for intermediate-temperature solid-oxide fuel cells based on a Sm_0.2Ce_0.8O_1.9 (SDC) electrolyte. The LC oxide was added to BSCF cathode in order to improve its electrical conductivity. X-ray diffraction examination demonstrated that the solid-state reaction between LC and BSCF phases occurred at temperatures above 950 °C and formed the final product with the composition: La_0.316Ba_0.342Sr_0.342Co_0.863Fe_0.137O_3 − δ at 1100 °C. The inter-diffusion between BSCF and LC was identified by the environmental scanning electron microscopy and energy dispersive X-ray examination. The electrical conductivity of the BSCF + LC composite oxide increased with increasing calcination temperature, and reached a maximum value of ∼300 S cm⁻¹ at a calcination temperature of 1050 °C, while the electrical conductivity of the pure BSCF was only ∼40 S cm⁻¹. The improved conductivity resulted in attractive cathode performance. An area-specific resistance as low as 0.21 Ω cm² was achieved at 600 °C for the BSCF (70 vol.%) + LC (30 vol.%) composite cathode calcined at 950 °C for 5 h. Peak power densities as high as ∼700 mW cm⁻² at 650 °C and ∼525 mW cm⁻² at 600 °C were reached for the thin-film fuel cells with the optimized cathode composition and calcination temperatures.     

Electrochemical performance of (Ba0.5Sr0.5)0.9Sm0.1Co0.8Fe0.2O3−δ as an intermediate temperature solid oxide fuel cell cathode

This study presents the electrochemical performance of (Ba_0.5Sr_0.5)_0.9Sm_0.1Co_0.8Fe_0.2O_3−δ (BSSCF) as a cathode material for intermediate temperature solid oxide fuel cells (IT-SOFC). AC-impedance analyses were carried on an electrolyte supported BSSCF/Sm_0.2Ce_0.8O_1.9 (SDC)/Ag half-cell and a Ba_0.5Sr_0.5Co_0.8Fe_0.2O_3−δ (BSCF)/SDC/Ag half-cell. In contrast to the BSCF cathode half-cell, the total resistance of the BSSCF cathode half-cell was lower, e.g., at 550 °C; the values for the BSSCF and BSCF were 1.54 and 2.33 Ω cm², respectively. The cell performance measurements were conducted on a Ni-SDC anode supported single cell using a SDC thin film as electrolyte, and BSSCF layer as cathode. The maximum power densities were 681 mW cm⁻² at 600 °C and 820 mW cm⁻² at 650 °C.     

NiMn2O4 spinel as an alternative coating material for metallic interconnects of intermediate temperature solid oxide fuel cells

In an effort to improve the performance of SUS 430 alloy as a metallic interconnect material, a low cost and Cr-free spinel coating of NiMn₂O₄ is prepared on SUS 430 alloy substrate by the sol-gel method and evaluated in terms of the microstructure, oxidation resistance and electrical conductivity. A oxide scale of 3-4 μm thick is formed during cyclic oxidation at 750 °C in air for 1000 h, consisting of an inner layer of doped Cr₂O₃ and an outer layer of doped NiMn₂O₄ and Mn₂O₃; and the growth of Cr₂O₃ and formation of MnCr₂O₄ are depressed. The oxidation kinetics obeys the parabolic law with a rate constant as low as 4.59 × 10⁻¹⁵ g² cm⁻⁴ s⁻¹. The area specific resistance at temperatures between 600 and 800 °C is in the range of 6 and 17 mΩ cm². The above results indicate that NiMn₂O₄ is a promising coating material for metallic interconnects of the intermediate temperature solid oxide fuel cells.     

Fabrication of Cu2ZnSnS4 films by sulfurization of Cu/ZnSn/Cu precursor layers in sulfur atmosphere for solar cells

Cu₂ZnSnS₄ (CZTS) absorbers were grown by sulfurization of Cu/ZnSn/Cu precursors in sulfur atmosphere. The reaction mechanism of CZTS formation from the precursor was analyzed using XRD and Raman spectroscopy. The films with a single phase CZTS were formed at 560 and 580 °C by sulfurization for 30 min. The film grown at 560 °C showed bi-layer morphology with grooved large grains on the top and dense small grains near the bottom of the film. On the other hand, the film grown at 580 °C showed large grains with grooves that are extended from surface top to bottom of the film. The solar cell fabricated with the CZTS film grown at 560 °C showed the best conversion efficiency of 4.59% for 0.44 cm² with V_oc=0.545 V, J_sc=15.44 mA/cm², and FF=54.6. We found that further improvement of the microstructure of CZTS films can increase the efficiency of CZTS solar cells.     

Synthesis and characterization of co-electroplated Cu2ZnSnS4 thin films as potential photovoltaic material

Cu₂ZnSnS₄ thin films have been successfully prepared by a novel synthesis process that involves a single step deposition of Cu₂ZnSnS₄ followed by a post-annealing treatment at 550 °C for 60 min in the atmosphere of N₂+H₂S (5%). The microstructure, morphology, composition and optical property of the film have been investigated in detail. It is found that the Na₂S₂O₃5H₂O concentration in the solution has a significant effect on the Cu₂ZnSnS₄ thin films. X-ray diffraction data indicates that the annealed Cu₂ZnSnS₄ thin films have a kesterite structure with preferred orientation along the (1 1 2) plane. Uniform and compact topographies are observed in some annealed films. From the energy dispersive X-ray spectroscopy analysis, it can be seen that Cu-poor and Zn-rich Cu₂ZnSnS₄ thin films have been obtained. The direct band gap energy of the film is about 1.5 eV.     

Studies on Cu2ZnSnS4 (CZTS) absorber layer using different stacking orders in precursor thin films

Cu₂ZnSnS₄ (CZTS) thin films were deposited by sputtering on glass substrates using stacked precursors. The stacked precursor thin films were prepared from Cu, SnS₂ and ZnS targets at room temperature with different stacking orders of Cu/SnS₂/ZnS/glass (A), ZnS/Cu/SnS₂/glass (B) and SnS₂/ZnS/Cu/glass (C). The stacked precursor thin films were sulfurized using a tubular rapid thermal annealing system in a mixed N₂ (95%)+H₂S (5%) atmosphere at 550 °C for 10 min. The effects of the stacking order in the precursor thin films on the structural, morphological, chemical, electrical and optical properties of the CZTS thin films were investigated. X-ray diffraction, Raman spectroscopy and X-ray photoelectron spectroscopy studies showed that the annealed CZTS thin film using a stacking order A had a single kesterite crystal structure without secondary phases, whereas stacking orders B and C have a kesterite phase with secondary phases, such as Cu_2−xS, SnS₂ and SnS. The annealed CZTS thin film using stacking order A showed a very dense morphology without voids. On the other hand, the annealed CZTS thin films using stacking orders B and C contained the volcano shape voids (B) and Sn-based secondary phases (C) on the surface of the annealed thin films. The direct band gap energies of the CZTS thin films were approximately 1.45 eV (A), 1.35 eV (B) and 1.1 eV (C).     

Pyrite (FeS2) thin films prepared by spray method using FeSO4 and (NH4)2Sx

A simple spray method for the preparation of pyrite (FeS₂) thin films has been studied using FeSO₄ and (NH₄)₂S_x as precursors for Fe and S, respectively. Aqueous solutions of these precursors are sprayed alternately onto a substrate heated up to 120°C. Although Fe–S compounds including pyrite are formed on the substrate by the spraying, sulfurization of deposited films is needed to convert other phases such as FeS or marcasite into pyrite. A single-phase pyrite film is obtained after the sulfurization in a H₂S atmosphere at around 500°C for 30 min. All pyrite films prepared show p-type conduction. They have a carrier concentration (p) in the range 10¹⁶–10²⁰ cm⁻³ and a Hall mobility (μ_H) in the range 200–1 cm²/V s. The best electrical properties (p=7×10¹⁶ cm⁻³, μ_H=210 cm²/V s) for a pyrite film prepared here show the excellence of this method. The use of a lower concentration FeSO₄ solution is found to enhance grain growth of pyrite crystals and also to improve electrical properties of pyrite films.     

Structure, composition and optical properties of Cu2ZnSnS4 thin films deposited by Pulsed Laser Deposition method

Polycrystalline Cu₂ZnSnS₄ (CZTS) thin films have been directly deposited on heating Mo-coated glass substrates by Pulsed Laser Deposition (PLD) method. The results of energy dispersive X-ray spectroscopy (EDX) indicate that these CZTS thin films are Cu-rich and S-poor. The combination of X-ray diffraction (XRD) results and Raman spectroscopy reveals that these thin films exhibit strong preferential orientation of grains along [1 1 2] direction and small Cu_2−xS phase easily exists in CZTS thin films. The lattice parameters and grain sizes have been examined based on XRD patterns and Atom Force Microscopy (AFM). The band gap (E_g) of CZTS thin films, which are determined by reflection spectroscopy varies from 1.53 to 1.98 eV, depending on substrate temperature (T_sub). The optical absorption coefficient of CZTS thin film (T_sub=450 °C) measured by spectroscopic ellipsometry (SE) is above 10⁴ cm⁻¹.     

Fabrication and characterization of a co-fired La0.6Sr0.4Co0.2Fe0.8O3−δ cathode-supported Ce0.9Gd0.1O1.95 thin-film for IT-SOFCs

A dense membrane of Ce_0.9Gd_0.1O_1.95 on a porous cathode based on a mixed conducting La_0.6Sr_0.4Co_0.2Fe_0.8O_3−δ was fabricated via a slurry coating/co-firing process. With the purpose of matching of shrinkage between the support cathode and the supported membrane, nano-Ce_0.9Gd_0.1O_1.95 powder with specific surface area of 30 m² g⁻¹ was synthesized by a newly devised coprecipitation to make the low-temperature sinterable electrolyte, whereas 39 m² g⁻¹ nano-Ce_0.9Gd_0.1O_1.95 prepared from citrate method was added to the cathode to favor the shrinkage for the La_0.6Sr_0.4Co_0.2Fe_0.8O_3−δ. Bi-layers consisting of <20 μm dense ceria film on 2 mm thick porous cathode were successfully fabricated at 1200 °C. This was followed by co-firing with NiO–Ce_0.9Gd_0.1O_1.95 at 1100 °C to form a thin, porous, and well-adherent anode. The laboratory-sized cathode-supported cell was shown to operate below 600 °C, and the maximum power density obtained was 35 mW cm⁻² at 550 °C, 60 mW cm⁻² at 600 °C.     

Low temperature Si doped ZnO thin films for transparent conducting oxides

Si doped zinc oxide (SZO, Si 3%) thin films are grown at low substrate temperature (T≤150 °C) under oxygen atmosphere, using pulsed laser deposition (PLD). Si addition leads to film amorphization and higher densification. Hall effect measurements indicate a resistivity of 7.9×10⁻⁴ Ω cm for SZO thin films deposited at 100 °C under optimized 1.0 Pa oxygen pressure. This value is in good agreement with optical resistivity simulated from the transmittance spectra. XPS measurements suggest more than one oxygen environment, and a Si oxidation state lying in between 2 and 3 only. As a matter of fact, the values of both measured and simulated carrier numbers are smaller than the ones expected, assuming that all Si cations in the ZnO matrix are at the 4⁺ oxidation state. Finally, the differences in the electrical and optical properties of SZO thin films deposited both on glass and PET substrates confirm the strong dependency of the electronic properties to the film crystallinity and stoichiometry in relationship with the substrate nature.     

Understanding the effect of TiO2, VCl3, and HfCl4 on hydrogen desorption/absorption of NaAlH4

The main objective of this work was to investigate the different effects of transition metals (TiO₂, VCl₃, HfCl₄) on the hydrogen desorption/absorption of NaAlH₄. The HfCl₄ doped NaAlH₄ showed the lowest temperature of the first desorption at 85 °C, while the one doped with VCl₃ or TiO₂ desorbed at 135 °C and 155 °C, respectively. Interestingly, the temperature of desorption in subsequent cycles of the NaAlH₄ doped with TiO₂ reduced to 140 °C. On the contrary, in the case of NaAlH₄ doped with HfCl₄ or VCl₃, the temperature of desorption increased to 150 °C and 175 °C, respectively. This may be because Ti can disperse in NaAlH₄ better than Hf and V; therefore, this affected segregation of the sample after the desorption. The maximum hydrogen absorption capacity can be restored up to 3.5 wt% by doping with TiO₂, while the amount of restored hydrogen was lower for HfCl₄ and VCl₃ doped samples. XRD analysis demonstrated that no Ti-compound was observed for the TiO₂ doped samples. In contrast, there was evidence of Al–V alloy in the VCl₃ doped sample and Al–Hf alloy in the HfCl₄ doped sample after subsequent desorption/absorption. As a result, the V- or Hf-doped NaAlH₄ showed the lower ability to reabsorb hydrogen and required higher temperature in the subsequent desorptions.     

Structural, optical and luminescent characteristics of sprayed fluorine-doped In2O3 thin films for solar cells

Fluorine-doped indium oxide thin films, F-In₂O₃, prepared by the spray pyrolysis technique on glass substrates have been studied using cathodoluminescence spectroscopy, X-ray diffraction and spectrophotometry. These films, deposited at the optimal substrate temperature (T_s=450 °C), crystallize in a cubic structure with a preferential orientation along the (4 0 0) direction. For this temperature, the electrical resistivity is in the order of 6×10⁻³ Ω cm and the average optical transmission in the visible region is larger than 95%. At room temperature, the cathodoluminescence spectra of F-In₂O₃ present two emission peaks: blue indirect band gap peak at 410 nm and a red emission at 650 nm.     

High temperature solid oxide electrolysis cell employing porous structured (La0.75Sr0.25)0.95MnO3 with enhanced oxygen electrode performance

An efficient steam electrolysis process for hydrogen production via a solid oxide electrolysis cell using porous network-like strontium doped lanthanum manganite (LSM)-yttria stabilized zirconia (YSZ) as the oxygen electrode material has been demonstrated. The porous network-like LSM powder was prepared by a nitrate–glycine combustion method. Impedance spectra and voltage-current density curves were measured as a function of cell current density and absolute humidity at 800 °C and 900 °C to characterize the cell performance. The cell area specific resistance (ASR) was 0.26 Ω cm² at 900 °C with 0.5 A/cm² current density and 50% absolute humidity (AH). The hydrogen production rate calculated from the Faraday's law was 362 ml/cm² h at 900 °C with 80 vol.% AH. The cell performance results indicate that the porous network-like LSM–YSZ is a promising oxygen electrode for high temperature electrolysis cells.     

Electrochemical performance of a solid oxide fuel cell based on Ce0.8Sm0.2O2−δ electrolyte synthesized by a polymer assisted combustion method

A polyvinyl alcohol assisted combustion synthesis method was used to prepare Ce_0.8Sm_0.2O_2−δ (SDC) powders for an intermediate temperature solid oxide fuel cell (IT-SOFC). The XRD results showed that this combustion synthesis route could yield phase-pure SDC powders at a relatively low calcination temperature. A thin SDC electrolyte film with thickness control was produced by a dry pressing method at a lower sintering temperature of 1250 °C. With Sm_0.5Sr_0.5Co₃-SDC as the composite cathode, a single cell based on this thin SDC electrolyte was tested from 550 to 650 °C. The maximum power density of 936 mW cm⁻² was achieved at 650 °C using humidified hydrogen as the fuel and stationary air as the oxidant.