正负错配纳米颗粒掺杂对YBCO薄膜性能影响的研究

利用低氟MOD工艺制备了Ba₂YTaO₆(BYTO)单一纳米颗粒掺杂及BYTO和LaAlO₃(LAO)双纳米颗粒共掺杂的YBCO复合薄膜。研究表明BYTO在YBCO薄膜中的最优掺杂量为6mol%, 此时薄膜的自场J_c为1.25 MA/cm ², 在1.2 T下获得的最大钉扎力为3.02 GN/m ³。共掺杂试验中引入与YBCO具有正错配度的BYTO粒子和负错配度的LAO粒子, 两者相互作用使有效掺杂总量提高至10mol%。调整两种纳米粒子的配比发现6mol% BYTO+4mol% LAO掺杂的YBCO复合薄膜样品在外加磁场为2 T时, J_c值高达0.27 MA/cm ², 获得最大钉扎力时的磁场由纯YBCO薄膜的0.42 T提高至共掺杂的1.6 T, 此时最大钉扎力为5.6 GN/m ³。正负错配纳米颗粒共掺杂有效地提高了YBCO复合薄膜在外加磁场下的超导性能。     

提高YBCO薄膜高场性能的研究

采用低氟的金属有机盐沉积技术(MOD)在LAO单晶上制备了Gd和Zr掺杂的YBCO薄膜, 并分析了不同掺杂对YBCO薄膜在外加磁场下的Jc的影响. 研究发现, 采用Gd部分取代YBCO薄膜中的Y元素, 可以有效地提高YBCO薄膜高场下的J_c值, 但对于低场下的Jc值影响不大; 而采用过量Gd掺杂YBCO薄膜, 可以有效地提高YBCO薄膜在低场下的J_c值, 但对于高场下的J_c值影响不大. 而Zr掺杂可以有效地提高YBCO薄膜在低场和高场下的J_c值. 最后, 结合Gd取代和Zr掺杂两种方式, 有效地提高了YBCO薄膜的场性能, 其最大钉扎力(Fp(Max))达到了16GN/m³, 比纯的YBCO薄膜(4.0 GN/m³)提高了约3倍; 在磁场为3T和7T下, 其J_c值分别为1.31MA/cm²和87.7kA/cm².     

Nb掺杂YBCO薄膜钉扎机理的研究

通过低氟MOD法制备了Nb掺杂的YBa₂Cu₃O_7-x(YBCO)薄膜, 掺入的Nb以Ba₂YNbO₆(BYNO)相存在, 其尺寸大小在20~30 nm之间, 薄膜中BYNO纳米颗粒以外延和随机两种取向共存, 且以随机取向为主。BYNO纳米颗粒的周围出现堆垛层错, 并且BYNO周围的YBCO出现严重的晶格畸变, 这增加了YBCO薄膜内部的微观应变, 且随机BYNO颗粒含量越高, YBCO薄膜内部的微观应变就越大。微观应变增加了薄膜的磁通钉扎能力, 进而提高了薄膜在高磁场下的超导性能。     

Nd3+掺杂的NaYF4:Yb@NaYF4:Ho上转换纳米颗粒的光谱分析

上转换纳米颗粒因具有良好的穿透深度和发光强度被广泛地应用在生物标记或生物成像中。实验制备了核壳结构的NaYF₄:Yb@NaYF₄:Ho纳米颗粒, 分散均匀, 粒径在50 nm左右。通过光谱分析可知, 该纳米颗粒可在980 nm激光激发下发射波长为650 nm为主的发射光。进一步对该核壳结构的NaYF₄:Yb@NaYF₄:Ho纳米颗粒进行Nd³⁺掺杂, 制备了可被800 nm激光激发且发射强红光的纳米颗粒。通过比较多种不同结构的Nd³⁺掺杂NaYF₄:Yb@NaYF₄:Ho纳米颗粒的荧光光谱发现, NaYF₄:Yb@NaYF₄:Ho,Nd纳米颗粒发射光最强, 表明Nd³⁺掺杂在NaYF₄:Yb@NaYF₄:Ho纳米颗粒的壳层中最佳。最后对NaYF₄:Yb³⁺50%@NaYF₄:Ho³⁺1%,Nd³⁺x%纳米颗粒Nd³⁺离子的掺杂浓度进行优化, 实验结果表明: Nd³⁺掺杂浓度为30%时,该纳米颗粒在800 nm激光激发下发光强度最强。     

稀土离子掺杂钼酸盐荧光粉的制备及发光性能研究

稀土离子掺杂的上转换发光材料近年来在照明、太阳能电池行业有着广泛的应用。通过水热法制备了Ho³⁺/Yb³⁺掺杂的NaGd(MO₄)₂荧光粉,通过XRD、SEM、光谱分析等手段对NaGd(MO₄)₂荧光粉进行了表征,研究了Ho³⁺/Yb³⁺掺杂对钼酸盐荧光粉发光特性的影响。形貌结构分析表明,Ho³⁺/Yb³⁺掺杂的NaGd(MO₄)₂荧光粉均为纯的四方相结构,颗粒尺寸约为0.4～0.9μm, Ho³⁺/Yb³⁺的掺杂使NaGd(MO₄)₂荧光粉的晶胞参数变小。光谱分析表明,NaGd(MO₄)₂荧光粉中546 nm处的绿光是来自Ho³⁺的⁵F₄     

La3+-Pr3+共掺杂纳米TiO2粉体的光催化性能

以钛酸四丁酯(TBT)为原料, 采用溶胶-凝胶法制备了纯TiO₂和La³⁺-Pr³⁺共掺杂复合粉体(La³⁺-Pr³⁺/TiO₂), 采用XRD、 UV-Vis和TEM等测试手段分析了在紫外光照射下, 以降解甲基橙为探针反应研究其可见光催化性能。结果显示: 所有样品均为锐钛矿相纳米TiO₂, 稀土元素镧和镨掺杂后TiO₂特征衍射峰宽化, 强度降低; 与纯TiO₂、 镧掺杂TiO₂与镨掺杂TiO₂相比, 光催化剂La³⁺-Pr³⁺共掺杂TiO₂颗粒的粒径更小, 比表面积更大, 光吸收边红移程度更显著; 与未掺杂和单一掺杂的TiO₂相比较, 共掺杂的TiO₂具有更高的可见光催化性能。当La³⁺与TiO₂和Pr³⁺与TiO₂的摩尔比分别为1.0%和0.2%时, 可见光催化性能最好。可见光催化性能的提高归因于镧和镨的协同作用。     

CaF2:Yb3+/Er3+/X(X= Li+, Na+, K+)近红外二区发光性能研究

利用热分解法制备了CaF₂:Yb³⁺/Er³⁺纳米颗粒,通过改变Yb³⁺和Er³⁺的掺杂浓度对其近红外二区(NIR-II)发光性能进行调节,研究结果表明,当Yb³⁺掺杂浓度为20%,Er³⁺掺杂浓度为2%时,在980 nm光源激发下,NIR-II发光性能最强,且纳米颗粒分散性良好,尺寸均匀。然后,进一步研究了不同的碱金属离子(Li⁺、Na⁺、K⁺)共掺杂对其NIR-II发光性能的影响,研究结果表明,Li⁺掺杂因不利于纳米颗粒成核导致NIR-II发光性能降低,Na⁺和K⁺掺杂均有利于NIR-II发光性能提升。相比而言,K⁺离子半径更大,更有利于破坏晶体场的局部对称性,因此,在K⁺共掺杂的情况下NIR-II发光性能最强。     

Pr掺杂Mg2SnO4纳米颗粒的制备及其光致发光性能

采用水热合成和低温煅烧两步法工艺制备了不同浓度(0~1.5mol%)镨掺杂锡酸镁, 通过X射线衍射(XRD)、扫描电子显微镜(SEM)及荧光光谱仪对合成的样品进行表征, 研究了Pr掺杂量对锡酸镁微观形貌的影响, 并讨论了其光致发光性能。结果表明, 所制备的Mg₂SnO₄: Pr³⁺为立方反尖晶石结构的立方纳米颗粒; 与未掺杂的Mg₂SnO₄相比, Pr掺杂浓度的增加使颗粒尺寸变大, 并使颗粒边角锐化。不同浓度Mg₂SnO₄: Pr³⁺的发射光谱表明Mg₂SnO₄: Pr³⁺样品中存在530、570 nm两处发射峰, 前者与Mg₂SnO₄基质中的氧空位有关, 后者由Pr元素³P₀-³H₅能级的跃迁造成。随着Pr掺杂浓度增加, 锡酸镁颗粒尺寸变大、发光中心增多, 使得Pr掺杂锡酸镁纳米颗粒在570 nm处的发光强度增强。     

柔性Eu3+掺杂SiO2纳米纤维薄膜的制备及其发光性能

采用溶胶-凝胶法结合静电纺丝技术制备了柔性Eu³⁺掺杂SiO₂纤维薄膜, 采用SEM、XRD、FT-IR、TG和PL等测试方法对材料进行表征。Eu³⁺掺杂SiO₂纤维薄膜在热处理后纤维直径变小, 纤维表面平滑无粘连。通过控制升温速度, 纤维薄膜经热处理后仍具有较高的力学强度, 750℃热处理后其拉伸强度可达4.31 MPa, 经过多次弯曲仍能保持原样。在392.6 nm光源激发下, Eu³⁺掺杂SiO₂纤维薄膜在570~670 nm附近呈现出来自于⁵D₀→⁷F_J的发射峰。当Eu³⁺掺杂浓度为8mol%时, 经过750℃热处理后Eu³⁺掺杂SiO₂纤维薄膜的发光强度达到最大值。     

YVO4∶Eu3+,Bi3+红色荧光粉的水热合成及其荧光性能

以Y₂O₃、Eu₂O₃、Bi(NO₃)₃·H₂O、浓HNO₃、偏钒酸铵、氨水、无水乙醇和一缩二乙二醇为原料,采用聚乙烯吡咯烷酮(PVP)辅助水热法合成YVO₄: Eu³⁺, Bi³⁺纳米颗粒。使用X射线衍射(XRD)、扫描电镜(SEM)、红外光谱(IR)和荧光光谱(FL)等手段对产品进行了表征和分析。结果表明：合成的样品为YVO₄: Eu³⁺, Bi³⁺纳米颗粒,均具有四方晶相结构,其微结构随反应溶液的的pH值变化。YVO₄: Eu³⁺, Bi³⁺纳米颗粒在619 nm处有较强的红光发射(电偶极跃迁⁵D₀→⁷F₂),在594 nm有较弱的橙光发射(磁偶极跃迁⁵D₀→⁷F₁)。随着Eu/Bi比值的增大材料的荧光先增强后减弱,在Eu/Bi比值为5时样品的红光发射最强。溶液的pH值影响YVO₄: Eu³⁺, Bi³⁺纳米晶的发光强度,其中pH值为10时的样品其红光发射最强。并探讨了YVO₄: Eu³⁺, Bi³⁺纳米晶的发光机理。     

Influence of Interfacial LSMO Nanoparticles/Layer on the Vortex Pinning Properties of YBCO Thin Film

YBa₂Cu₃O_7?δ (YBCO) thin films have been deposited on bare and La_0.67Sr_0.33MnO₃ (LSMO) modified single crystal SrTiO₃ (STO) substrates. The effect of randomly distributed ferromagnetic LSMO nanoparticles and a complete LSMO layer, present at STO/YBCO interface, on the superconducting properties of YBCO thin films has been investigated by temperature dependent magnetization studies. The YBCO thin film on LSMO nanoparticles decorated STO substrate shows significant improvement in the critical current density and pinning force density as compared to the YBCO thin film deposited on bare STO substrate and this improvement is more significant at higher applied magnetic field. However, the LSMO/YBCO bilayer showed the improved flux pinning properties only up to a magnetic field of 1.5 T above which it deteriorates. In the case of LSMO/YBCO bilayer, the underlying LSMO layer gives rise to magnetic inhomogeneities due to domain structure, which leads to improved flux pinning properties limited to lower field. However, in the case of LSMO nanoparticles decorated substrate, the presence of LSMO nanoparticles at YBCO/STO interface seems to introduce magnetic inhomogeneities as well as structural defects, which might be acting as correlated pinning sites leading to improved flux pinning properties of the YBCO thin film over a wide range of applied magnetic field.     

Enhanced Flux Pinning Properties of BaZrO3-doped YBCO Films Grown by Pulsed Laser Deposition on LaAlO3(100) Substrates Decorated with Y2O3 Nanoislands

In this work, we intend to investigate the interaction between two types of nanoscaled artificial pinning centers and their pinning properties in YBCO thin films grown by pulsed laser deposition technique. The two types of artificial pinning centers were prepared in different processes, (1) Y₂O₃ nanoislands decorated on substrates prior to the deposition of YBCO thin film, and (2) BaZrO₃ nanoparticles self-assembled within YBCO matrix during the deposition of YBCO thin film. We compared the transport characteristics of the YBCO thin films containing these two types of artificial pinning centers with those of pure YBCO thin films grown on decorated substrates and BZO-doped YBCO thin films grown on undecorated substrates. It was found that these two types of artificial pinning centers, which are simultaneously present, acted constructively to enhance the pinning properties of YBCO thin films.     

Nb3Al AND Nb3(Al,Ge) SUPERCONDUCTING TAPES BY LASER BEAM ANNEALING

Nb₃Al AND Nb₃(Al,Ge) tapes with excellent superconducting properties have been fabricated using high energy density laser beam irradiation, irradiations were carried out continuously on Nb-25at%AI and Nb-20at%Al -5at%Ge tapes prepared by powder metallurgical processing. With the high power density and short irradiation time, the tape could be heated and cooled much faster than a tape heat treated by conventional methods. The results were fine structure and large critical current density J_c values at high magnetic fields. J_c at 23 Tesla was over 10⁴ A/cm². This value was much greater than that obtained from a commercial Nb₃Sn superconductor. New continuous irradiation systems have been developed for scale-up development. Nb₃Al tapes 10 m in length were successfully fabricated. There was some scatter in J_c along the tape length. Small coil tests in magnetic fields indicated that the tape had excellent stability against a flux jump and mechanical strain.     

Ba源配比对MOCVD法制备YBCO薄膜性能的影响研究

采用单一液相混合源进液及闪蒸的MOCVD系统在LaAlO₃(001)单晶基片上制备YBa₂Cu₃O_7-x(YBCO)薄膜, 研究混合源中Ba含量对YBCO超导薄膜成分、结构及电流承载能力的影响。结果表明, 当Ba含量较小时, YBCO薄膜中易于形成尺寸较小的CuO颗粒; 随着Ba含量的增加, 薄膜中形成Ba₂CuO₃晶粒, 并且Ba₂CuO₃晶粒尺寸随Ba含量的增加而逐渐增大。杂质相的含量、尺寸以及与YBCO的晶格匹配程度对YBCO薄膜的双轴取向生长和电流承载能力具有重要影响。当原料摩尔配比Ba/Y=3.9时, 成功制备出了具有优异面内面外取向、结构致密的YBCO超导薄膜, 77 K下的300 nm厚度薄膜的临界电流密度达到4.0 MA/cm², 该研究结果对于第二代涂层导体的发展具有重要意义。     

海藻基CDs-Cu-TiO2复合材料的制备及其光催化性能

光催化降解技术能够高效去除废水中的有机污染物, 具有广阔的应用前景。本研究以海藻为碳源, 采用微波水热法制备海藻基碳量子点(CDs), 并进一步合成CDs-Cu-TiO₂复合材料作为可见光催化剂用于污染物降解。结果表明, 复合材料中CDs、Cu²⁺与TiO₂紧密结合在一起, 可见光区吸收明显增强, 荧光发射效率降低。CDs与Cu²⁺的引入产生协同效应, 使复合材料的禁带宽度降低到2.35 eV, 并有效抑制了电子-空穴的复合。以罗丹明B为污染物模型的光催化性能实验显示, 海藻基CDs-Cu-TiO₂复合材料在可见光照射下降解RhB的一级反应速率常数能够达到纯TiO₂纳米颗粒的6.4倍, 150 min降解率接近100%, 是TiO₂纳米颗粒的2倍。     

Preparation and photoluminescence of SrNb2O6 nanoparticles prepared by combustion method

Pure and Mn-doped SrNb₂O₆ nanoparticles have been prepared by sol–gel combustion method using citric acid as fuel and complexing agent and nitrates as oxidants at a relatively low temperature compared to solid-state reaction method. X-ray diffraction (XRD) patterns of the pure SrNb₂O₆ samples show that the SrNb₂O₆ nanoparticles exhibited orthorhombic phase. Photoluminescence (PL) properties of all the undoped and Mn-doped samples were studied in detail. For the pure SrNb₂O₆ samples, a strong blue emission band centered at 442 nm and two weak emission bands centered at 524 nm and 626 nm, respectively, can be observed. For the Mn-doped SrNb₂O₆ samples, no emission from Mn²⁺ was observed while the blue emission intensity of SrNb₂O₆ varied with the Mn-doping concentration. This novel PL characteristic of the doped samples was explained.     

Optimization of YBCO surfaces of tunnel junctions

It is established that in YBa₂Cu₃O₇ films prepared by annealing amorphous oxide deposits, Ba segregation in the amorphous phase and YBCO decomposition after recrystallization are the major causes of surface degradation. The authors have grown films by entirely in-situ processing in which these effects are minimized. The films were epitaxially grown on (100) SrTiO ₃ substrates with the a-axis normal to the film plane. Both structural and chemical analyses indicated that they are homogeneous and have proper stoichiometry up to their surfaces. At 4.2 K, contact resistivities below 4×10^-10 ohm-cm² were obtained with gold overlayers. Junctions have been formed by depositing thin Au proximity layers over the YBCO films followed by MgO barriers and Nb counterelectrodes. In some of the junctions weak-link shorts were observed, providing unambiguous evidence that the growth procedures used can produce films that are superconducting up to their surfaces     

双铁电复合材料的制备及其光电化学性能研究

通过模板法制备钒酸铋(BiVO₄)薄膜, 用溶胶-凝胶法制备铁电材料铁酸铋(BiFeO₃)并对BiVO₄进行修饰, 以半导体复合的方式提高BiVO₄的光电化学性能。电化学测试结果表明, 经BiFeO₃修饰后, BiVO₄薄膜的光电化学性能有所提高, 其中经BiFeO₃旋涂5次后的BiVO₄薄膜具有最优的光电化学性能, 光电流密度达到0.72 mA·cm^-2, 较未修饰样品提高了67.4%。利用外场极化调节能带弯曲可以显著地提高BiVO₄/nBiFeO₃铁电复合物的光电化学性能, 复合物经正极化20 V电压处理后的光电流密度最高为0.91 mA·cm^-2, 比BiVO₄薄膜提升了1倍以上, 具有良好的光电化学性能。BiFeO₃与BiVO₄复合后有利于形成异质结, 促进光生电子、光生空穴的产生与分离, 并且外场极化调节能带弯曲使光生电荷加速转移, 是铁电复合物光电化学性能提高的主要原因。