SnO2/NiO复合半导体纳米纤维的制备及气敏性能研究

采用静电纺丝技术结合化学沉淀法和高温煅烧处理, 制备了具有不同Sn含量的SnO₂/NiO复合半导体纳米纤维。采用扫描电子显微镜(SEM), X射线衍射仪(XRD)和能量色散X射线光谱仪(EDS)对样品的形貌, 结构以及各元素含量进行表征。以乙醇为目标气体, 探究SnO₂/NiO纳米纤维的气体传感性质, 以及Sn含量对复合纳米纤维气敏性能的影响。研究结果表明, SnO₂/NiO复合纳米纤维具有三维网状结构, SnO₂复合对NiO纳米纤维的气敏性能具有明显的增强作用。随着SnO₂含量的增加, 复合纤维对乙醇气体的响应灵敏度增强, 其中响应最高的复合纳米纤维在最佳工作温度160 ℃条件下对体积分数为100×10^-6乙醇气体的响应灵敏度为13.4, 是NiO纳米纤维最大响应灵敏度的8.38倍。与市面常见的乙醇气体传感器MQ-3相比, SnO₂/NiO复合纳米纤维的最佳工作温度更低, 响应灵敏度更高, 具有一定的实际应用价值。     

Au修饰SnO2复合纳米材料的制备和气敏性能

以氯金酸和乙酰丙酮氯化锡为主要材料,通过一步水热法制备了SnO₂和Au修饰的SnO₂（Au/SnO₂）纳米粒子.使用TEM、EDS、XRD和XPS等手段对样品的形貌、组成及结构进行表征,研究了两种材料对乙醇的气敏性能.结果表明,两种纳米颗粒的尺寸都比较均一,平均直径约为9-12 nm;SnO₂为四方金红石结构,Au为面心立方结构;在Au/SnO₂样品中,Au与SnO₂的重量比为2.6%,Au元素主要以Au⁰的价态存在并含有少量的Au³⁺价态;与纯SnO₂纳米粒子相比,Au修饰可显著提高气敏元件对乙醇响应的灵敏度和选择性。     

SnO2修饰MoS2薄膜的n-p可调室温氢气响应及其原位SKPM研究(英文)

研发高性能氢气传感器对氢能及相关产业发展具有重要意义.2D-MoS₂纳米材料在构建快速可靠的室温氢气传感器方面优势显著,但灵敏度和选择性较差.本文报导了具有n-p可调型氢敏响应行为的SnO₂修饰MoS₂薄膜,其原位SKPM研究表明SnO₂(0.38 eV)和MoS₂(0.26 eV)在氢敏响应中会出现不同的表面电势变化,使其界面势垒随SnO₂覆盖率的增加而改变,从而使界面效应对体系n型氢敏响应的积极贡献转变为负面补偿.当SnO₂覆盖率为6.4%时,传感器具有增敏、提速且选择性好的n型氢敏响应,当其提高至95.6%时呈现p型响应.这种随结构n-p可调的氢敏响应既能用于传感层的敏感性能调节,还可为MoS₂基二维材料的气敏响应类型调控提供简单易行、成本低廉的方法.     

异质复合结构纳米纤维SnO2/ZnO的制备及其气敏特性研究

采用静电纺丝法制备了多级中空结构的SnO₂纳米纤维, 然后将SnO₂纳米纤维置于90℃乙酸锌溶液中, 恒温水浴条件下, 在SnO₂纳米纤维上生长了ZnO纳米球, 形成了异质结构的SnO₂/ZnO复合纳米纤维。分别通过XRD、SEM、EDX和XPS等表征手段对异质复合纳米纤维SnO₂/ZnO材料的结构、形貌及元素含量进行了表征分析。异质结构的SnO₂/ZnO复合纳米纤维保持了SnO₂纳米纤维多级中空的纤维结构, SnO₂纳米纤维长度约为300 nm, 依附于SnO₂纤维表面的SnO₂纳米颗粒生长的ZnO纳米球直径为250~300 nm。采用静态气体测试系统对异质复合纳米纤维SnO₂/ZnO气敏元件的气敏性能进行了测试。测试结果表明: 异质复合纳米纤维SnO₂/ZnO气敏元件在最佳工作温度350℃下, 对(0.5~100)×10^-6丙酮具有优异的响应灵敏度、较好的选择性和长期稳定性。异质复合纳米纤维SnO₂/ZnO中存在于ZnO纳米球与SnO₂纳米颗粒间的N-N同型异质结导致复合材料晶界势垒高度的降低, 改善了电子与空穴的输运特性, 促使SnO₂/ZnO异质复合纳米纤维的吸附能力大大增强, 从而改善了SnO₂/ZnO元件的丙酮敏感特性。     

MOFs衍生的Sn掺杂In2O3材料的制备及氯气气敏性能

采用简单的水热法制备了Sn掺杂的有机框架化合物(MOFs),再煅烧衍生出Sn掺杂In₂O₃(Sn-In₂O₃)气敏材料。表征结果表明，材料的形貌是中空微米棒且材料的比表面积较大、Sn元素成功被掺杂，材料表面的氧空位浓度也较大。气敏测试结果表明，Sn-In₂O₃中空微米棒材料对低浓度Cl₂具有较大的灵敏度，理论最低检测限低至0.37×10^-9。通过气敏机理分析，其优良的Cl₂气敏性能主要归因于材料的中空结构、大的比表面积和丰富的氧空位，这主要来源于MOFs模板法的制备和Sn元素的掺杂。     

同轴异质In2O3/SnO2复合纤维的构筑及其甲醛敏感性能

两种半导体材料合成的复合材料由于电子亲合能和带隙宽度差形成了同型异质或异型异质结,利用异质结界面形成的费米能级效应可以提高界面载流子迁移率,从而有效改善气体传感器的气敏性能。本文采用自行设计开发的多层同轴静电纺丝装置,构筑了同轴异质复合纳米纤维In₂O₃/SnO₂。所构筑的同轴异质复合纤维In₂O₃/SnO₂外层较大的In₂O₃纳米颗粒附着在内层较小SnO₂纳米颗粒表面,形成中空的分级纤维结构。同轴异质复合纤维In₂O₃/SnO₂中由于存在大量的N-N同型异质结界面,电子迁移率增强,表面活性增强,吸附氧含量增加,对甲醛表现出良好的气敏性能。在250℃环境下,同轴复合纤维In₂O₃/SnO₂气敏元件对50×10^-6的甲醛响应为14.12,分别...     

缺陷诱导的Cr掺杂TiO2纳米粉末的铁磁性

用溶胶-凝胶法制备了金红石 Ti_1-xCr_xO₂ (x=0、0.04、0.08) 纳米粉末。磁性测量结果显示, 制备的 Cr 掺杂金红石 TiO₂ 纳米粉末具有室温铁磁性, 样品 x=0.04 和0.08 的饱和磁化强度M_s分别为 0.55×10^-3和 1.6×10^-3 emu/g, (emu/g=4π×10^-7Wb•m/kg)矫顽力H_c分别为 220和 40 Oe(Oe=10³/(4π)A/m)。Cr 掺杂量较大的样品的饱和磁化强度较大, 在 Ar 气中退火可以使粉末呈超顺磁性。Cr2p 区域的密集扫描 X 射线光电子能谱 (XPS)分析显示, 在所有的样品中 Cr都是以Cr³⁺存在。电子顺磁共振谱 (EPR)分析表明, 样品中的 Cr³⁺ 离子仅对其顺磁性有贡献。这些结果提示, 粉末微弱的室温铁磁性来源于掺杂引入的结构缺陷, 其中, 氧空位起重要作用。     

毫米波功率计量标准器芯片的研制

针对毫米波WR-6波段功率标准器核心芯片需求,设计了芯片整体结构,研究了结构中各层的微加工工艺,制备了温度传感用Pt薄膜,在250 ℃退火后,100 nm Pt薄膜的电阻温度系数(TCR)达到2.4×10^-3/K,相对稳定度为2.4×10^-6。安装在毫米波功率标准器上的芯片对110～170 GHz的反射率低于-23 dB。直流功率灵敏度为0.83 mΩ/mW。     

溶剂对FTO薄膜的结构和光电性能的影响

采用喷雾热解法(SPD),分别使用甲醇、乙醇、异丙醇、正丁醇和去离子水作为溶剂制备F掺杂的SnO₂(FTO)透明导电薄膜,使用X射线衍射仪、扫描电子显微镜、四点探针电阻仪、霍尔效应仪和紫外可见分光光度计等手段对薄膜进行测试和表征,研究了溶剂对FTO薄膜结构、形貌和光电性能的影响,研究了溶剂对FTO薄膜结构与光电性能的影响。结果表明：FTO薄膜具有四方相金红石结构;使用不同溶剂制备的薄膜,其表面形貌和颗粒尺寸明显不同;使用甲醇为溶剂制备的FTO薄膜呈现饱满的金字塔状,晶粒尺寸均匀,结构致密,具有最佳的综合光学和电学性能,其电阻率可达4.43×10^-4 Ω·cm,载流子浓度为9.922×10²⁰ cm^-3,品质因数为1.646×10^-2 Ω^-1,可见光区透射比均大于75%。     

MnO2纳米棒-还原石墨烯复合修饰玻碳电极用于苋菜红的检测

利用电化学还原法制备MnO₂纳米棒-还原石墨烯复合修饰电极（MnO₂ NRs-ErGO/GCE）用于苋菜红的检测。采用SEM和XRD分别对修饰电极材料进行微观形貌和成分结构表征。通过循环伏安法考察了苋菜红在裸电极、ErGO/GCE和MnO₂ NRs-ErGO/GCE上的电化学行为,并对测定条件如pH值、富集电位、富集时间进行了优化。结果表明,MnO₂ NRs-ErGO增大了GCE电化学活性面积,提高了苋菜红的电化学氧化响应。在最优的检测条件下,MnO₂ NRs-ErGO/GCE线性扫描伏安法检测苋菜红线性范围为2.0×10^-8~1.0×10^-5 mol/L和1.0×10^-5~4.0×10^-4 mol/L,检测限为1.0×10^-8 mol/L。MnO₂ NRs-ErGO/GCE用于真实饮料样品检测,获得满意结果。     

A new low-field determination of the proton gyromagnetic ratio inwater

The proton gyromagnetic ratio in water has been measured by the low field method using atomic magnetic resonance in ⁴He, a multicurrent solenoid and an induction method for the dimensional measurement of the solenoid. The result for air and vacuum environment is γ'_p (low, air)=2.67515451×10⁸ s^-1 T^-1 (0.18×10^-6), γ'_p (low, vacuum)=2.67515418×10⁸ s^-1 T^-1 (0.18×10^-6), based on the adopted values K_J-90=483597.9 GHz/V, R_K-90=25812.807 Ω, and measured values γ(⁴ He)/γ'_p=658.200556, γ(⁴He) (air)=1760.78819×10⁸ s^-1 T^-1 (0.18×10^-6), K_J-90, R_K-90     

Power stabilized cryogenic sapphire oscillator

Microwave oscillators of exceptional short-term stability have been realized from cryogenic sapphire resonators with loaded Q factors in excess of 10⁹ at 11.9 GHz and 6 K. This has been achieved by a power stabilized loop oscillator with active Pound frequency stabilization. These oscillators have exhibited a fractional frequency stability of 3-4×10^-15 for integration times from 0.3 to 100 s. The relative drift of these two oscillators over one day is a few times 10^-13. To reduce the long-term drift, which is principally due to excessive room temperature sensitivity, we have added cryogenic sensors for the power and frequency stabilization servos to one of these oscillators. We have also implemented a servo to reduce the room temperature sensitivity of our phase modulators. Testing of this oscillator against a Shanghai Observatory H-maser has shown an Allan deviation of 4×10^-15 from 600 to 2000 s     

CaO-B2O3玻璃助烧的零膨胀系数β-锂霞石陶瓷的制备及性能研究

采用固相反应法制备CaO-B₂O₃玻璃（简称“CB”玻璃）助烧的零膨胀系数β-锂霞石陶瓷。通过差示扫描量热(DSC)、X射线衍射(XRD)、扫描电子显微镜(SEM)手段分别对CB玻璃的热学特性和助烧后的β-锂霞石陶瓷样品的物相与显微形貌进行表征。结果表明, CB玻璃具有良好的助烧效果, 可以显著降低β-锂霞石陶瓷的烧结温度(从1300℃降至1150℃), 并大幅提高陶瓷的相对密度(从93.3%提高到97.4%)。加入CB玻璃助烧剂, β-锂霞石陶瓷致密性显著提高, 内部无微裂纹存在。加入4wt%和6wt% CB玻璃的β-锂霞石陶瓷在室温~200℃范围内具有零膨胀系数, 分别为0.02×10^-6/K和0.4×10^-6/K。然而, 加入8wt% CB玻璃的β-锂霞石陶瓷样品中产生了具有高正膨胀系数的新物相LiAlO₂, 使样品的热膨胀系数提高至3.46×10^-6/K。     

Ultrastable optical frequency reference at 1.064 μm using a C2HD molecular overtone transition

Saturated molecular overtone transitions in the visible and near infrared can be detected with record-high sensitivities using our cavity-enhanced frequency modulation technique. We have stabilized a Nd:YAG laser onto the P(5) line in (ν₂+3ν₃) overtone band of C₂HD at 1.064 μm and established its absolute frequency. Excellent signal-to-noise ratio produced an Allan variance of 3.4×10^-13 at 1 s averaging, improving to 1×10^-14 after 800 s. Selection of slow molecules with low power and gas pressure gave a linewidth 13 times below the room temperature transit time limit     

Direct comparison of two independent Josephson voltage standards at1 V and precision measurements up to 10 V

Two Josephson voltage standards have been compared using a room-temperature electronic nanovoltmeter with a peak-to-peak noise of about 2 nV at the 1-V level corresponding to a RMS uncertainty of 4×10^-10. The excellent stability in maintaining the desired voltage steps makes it possible to obtain recorder traces comparing Nb/Al₂O₃/Nb Josephson standards with Weston cells and Zener reference standards at 1 V and 10 V. At 10 V the best result shows a peak-to-peak noise of 250 nV corresponding to a RMS uncertainty of 5×10^-9 for a Zener reference and 50 nV corresponding to 1×10^-9 for a series connection of nine Weston cells. As an example for the application of the Josephson standard as a potentiometer the deviation in the linearity of a digital voltmeter is confirmed to be on the order of 0.1 p.p.m. in the range from -10 V to +10 V     

复配偶联剂对SiO_2/聚四氟乙烯复合材料性能的影响

制备了不同组分配比的氨丙基三乙氧基硅烷(KH550)-苯基三甲氧基硅烷(Z6124)复配偶联剂(KH550-Z6124)改性SiO2/聚四氟乙烯(PTFE)复合材料,系统地研究了KH550-Z6124组分配比对复合材料介电性能、吸水率和导热性能的影响。采用Lichtenecker模型计算了SiO2/PTFE复合材料的介电常数和介电损耗理论值,并与实验值进行对比。结果表明:当KH550、Z6124的含量(以SiO2的质量为基准)分别为0.3wt%和1.7wt%时,KH550-Z6124改性SiO2/PTFE复合材料的介电损耗由Z6124改性SiO2/PTFE复合材料的1.7×10-3降低至1.0×10-3,吸水率由0.082 6wt%降低至0.020 3wt%,导热率提高66%;SEM形貌分析发现KH550-Z6124改性SiO2颗粒在PTFE基体中均匀分散,界面连接更紧密;KH550-Z6124改性SiO2/PTFE复合材料的介电常数和介电损耗实验值更接近其理论值。     

Highly Sensitive Humidity Sensor Using Pd/Porous GaAs Schottky Contact

This paper investigates the suitability of porous GaAs as a semiconductor material for sensing humidity. The authors have developed two types of sensors based on Pd/porous GaAs and Pd/GaAs Schottky contacts for humidity measurements. It was found that the porosity on GaAs wafer promoted the sensing properties of the contact used as highly sensitive humidity sensor toward different amounts of relative humidity operated at room temperature. On the contrary, the Pd/GaAs sample operated at room temperature exhibited negligible sensitivity to relative humidity. The advantages of using porous GaAs for Schottky humidity sensor are the following: high sensitivity, low response time, and insignificant dependence on temperature. Current-voltage (I-V) characteristics of the Pd/porous GaAs Schottky humidity sensor exhibited a saturation current value of 8.5times10^-10 A under dry condition (5% relative humidity). This was increased to 7.0times10^-9 A when submitted to a relative humidity of 25%. The saturation current was further increased considerably to 3.0times10^-7 A as the relative humidity was increased to 95%. This is more than two orders of magnitude increase in saturation current compared to dry condition. A parameter called humidity sensitivity was defined using the current value at a fixed forward voltage of 0.2 V to present the sensitivity of the sensor. Response times are reported to discuss the adsorption and desorption characteristics of the device. Pd/porous GaAs sensor operated at room temperature showed a fast response time of 2 s and a sensitivity value of 93.5% in the presence of 25% relative humidity. Furthermore, the influence of increase in relative humidity as well as heating effects on the responsivity of the sensor is described. Scanning electron microscopy analysis of the Pd/porous GaAs sample exhibited highly porous structures