Analysis of ultra‐wideband short pulses for radio communications

A method to determine the transient waveform of ultra‐wideband (UWB) pulses at various stages of propagation and scattering is developed based on the reconstruction of incident wave and one of the known results for continuous waves. By using this method, the transmitting power of a UWB pulsed dipole antenna and the loss due to rainfall scattering are calculated, and the feasibility for short‐ and moderate‐range communication applications is discussed. Copyright © 2001 John Wiley & Sons, Ltd.     

Numerical simulations of rear point‐contacted solar cells on 2.2 Ωcm p‐type c‐Si substrates

Rear surface of high‐efficiency crystalline silicon solar cells is based on a combination of dielectric passivation and point‐like contacts. In this work, we develop a 3D model for these devices based on 2.2 Ωcm p‐type crystalline silicon substrates. We validate the model by comparison with experimental results allowing us to determine an optimum design for the rear pattern. Additionally, the 3D model results are compared with the ones deduced from a simpler and widely used 1D model. Although the maximum efficiency predicted by both models is approximately the same, large deviations are observed in open‐circuit voltage and fill factor. 1D simulations overestimate open‐circuit voltage because Dember and electrochemical potential drops are not taken into account. On the contrary, fill factor is underestimated because of higher ohmic losses along the base when 1D analytical model is used. These deviations are larger for relatively low‐doped substrates, as the ones used in the experimental samples reported hereby, and poor passivated contacts. As a result, 1D models could mislead to too short optimum rear contact spacing. Copyright © 2013 John Wiley & Sons, Ltd.     

Laser‐fired contact for n‐type crystalline Si solar cells

Laser‐fired contacts to n‐type crystalline silicon were developed by investigating novel metal stacks containing Antimony (Sb). Lasing conditions and the structure of metals stacks were optimized for lowest contact resistance and minimum surface damage. Specific contact resistance for firing different metal stacks through either silicon nitride or p‐type amorphous silicon was determined using two different models and test structures. Specific contact resistance values of 2–7 mΩcm² have been achieved. Recombination loss due to laser damage was consistent with an extracted local surface recombination velocity of ~20 000 cm/s, which is similar to values for laser‐fired base contact for p‐type crystalline silicon. Interdigitated back contact silicon heterojunction cells were fabricated with laser‐fired base contact and proof‐of‐concept efficiencies of 16.9% were achieved. This localized base contact technique will enable low cost back contact patterning and innovative designs for n‐type crystalline solar cell. Copyright © 2014 John Wiley & Sons, Ltd.     

Investigation of laser ablation on boron emitters for n‐type rear‐junction PERT type silicon wafer solar cells

n‐type silicon wafer solar cells are receiving increasing attention for industrial application in recent years, such as the n‐type rear‐junction Passivated Emitter Rear Totally‐diffused (PERT) solar cells. One of the main challenges in fabricating the n‐PERT solar cells is the opening of the rear dielectric for localized contacts. In this work laser ablation is applied to locally ablate the rear dielectric. We investigate the laser damage to the emitter at the laser‐ablated regions using the emitter saturation current density, J_0e,laser, extracted by two approaches. J_0e,laser is observed to be injection dependent due to high J₀₂ recombination caused by laser damage to the space charge region. By using the optimized laser ablation parameters, n‐PERT solar cells with an efficiency of up to 21.0% are realized. Copyright © 2015 John Wiley & Sons, Ltd.     

Optimal design of ultra‐broadband,omnidirectional, and polarization‐insensitive amorphous silicon solar cells with a core‐shell nanograting structure

We systematically investigated the optical behaviors of an amorphous silicon solar cell with a core‐shell nanograting structure. The horizontally propagating Bloch waves and Surface Plasmon Polariton waves lead to significant absorption enhancements and consequently short‐circuit current enhancements of this structure, compared with the conventional planar one. The perpendicular carrier collection makes this structure optically thick and electronically thin. An optimal design is achieved through full‐field numerical simulation, and a physical explanation is given. Our numerical results show that this configuration has ultra‐broadband, omnidirectional, and polarization‐insensitive responses and has a great potential in photovoltaics. Copyright © 2012 John Wiley & Sons, Ltd.     

Thin Al2O3 passivated boron emitter of n‐type bifacial c‐Si solar cells with industrial process

We have presented thin Al₂O₃ (~4 nm) with SiN_x:H capped (~75 nm) films to effectively passivate the boron‐doped p⁺ emitter surfaces of the n‐type bifacial c‐Si solar cells with BBr₃ diffusion emitter and phosphorus ion‐implanted back surface field. The thin Al₂O₃ capped with SiN_x:H structure not only possesses the excellent field effect and chemical passivation, but also establishes a simple cell structure fully compatible with the existing production lines and processes for the low‐cost n‐type bifacial c‐Si solar cell industrialization. We have successfully achieved the large area (238.95 cm²) high efficiency of 20.89% (front) and 18.45% (rear) n‐type bifacial c‐Si solar cells by optimizing the peak sintering temperature and fine finger double printing technology. We have further shown that the conversion efficiency of the n‐type bifacial c‐Si solar cells can be improved to be over 21.3% by taking a reasonable high emitter sheet resistance. Copyright © 2017 John Wiley & Sons, Ltd.     

Temperature dynamics of multijunction concentrator solar cells up to ultra‐high irradiance

We report experimental results for the effect of irradiance (from 12 up to 8600 suns) on the temperature coefficients of the key performance parameters of multijunction concentrator solar cells, with a flash‐like, real‐sun optical system. Particular attention is paid to the time scales and magnitudes of junction heating, hence the degree to which the cell can be deemed isothermal. The implications for corresponding measurements from solar simulators with pulsed artificial light and for the performance evaluation of concentrator photovoltaics are also addressed. Copyright © 2011 John Wiley & Sons, Ltd.     

C‐Si solar cell modules

In order to meet the rapidly growing demand for solar power photovoltaic systems which is based on public consciousness of global environmental issues, SHARP has increased the production of solar cells and modules over 10‐fold in the last 5 years. Silicon‐based technologies are expected to be dominant in the coming decade. In the course of an increase of the annual production scale to 1000 MW, the efficiency of modules will be improved and the thickness of wafers will be decreased and all this will lead to a drastic price reduction of PV systems. Copyright © 2005 John Wiley & Sons, Ltd.     

Limiting factors on the semiconductor structure of III–V multijunction solar cells for ultra‐high concentration (1000–5000 suns)

The main limiting factors of multijunction solar cells operating under ultra‐high concentration (>1000 suns) are examined by means of 2D physically based numerical modelling. The validation of the model is carried out by fitting calibrated light concentration measurements. Because the series resistance is the most important constraint in the electrical performance of the solar cell under ultra‐high irradiance, it is analysed and quantified detailing different contributions such as: (i) the electrical properties of the emitter; (ii) window layer of the top cell; and (iii) the band discontinuities formed at heterojunctions. We found the role of window layer to be important at very high concentrations (above 700 suns), while at ultra‐high concentrations, (above 1000 suns) a gain in efficiency (~ 1% absolute) can be obtained by a proper structural design of the window layer. In the case of the heterojunctions included in the multijunction solar cell, the impact of a high‐band offset can be mitigated by increasing the doping level density thus favouring the tunnelling effect. Moreover, the influence of different recombination mechanisms and high‐injection effects at ultra‐high irradiance is discussed. Finally, an optimisation of the complete solar cell taking into account the ohmic contacts to work under ultra‐high irradiances (from 1000 to 5000 suns) is presented as well as the implications on the use of ultra‐high irradiance in different multijunction solar cell architectures. Copyright © 2016 John Wiley & Sons, Ltd.     

Interconnection of busbar‐free back contacted solar cells by laser welding

We are presenting the module integration of busbar‐free back‐junction back‐contact (BJBC) solar cells. Our proof‐of‐concept module has a fill factor of 80.5% and a conversion efficiency on the designated area of 22.1% prior to lamination. A pulsed laser welds the Al metallization of the solar cells to an Al foil carried by a transparent substrate. The weld spots electrically contact each individual finger to the Al foil, which serves as interconnect between different cells. We produce a proof‐of‐concept module using busbar‐free cell strips of 25 × 125 mm². These are obtained by laser‐dicing of a 125 × 125 mm² BJBC solar cell. The fill factor of this module is increased by 3.5% absolute compared with the initial cell before laser‐dicing. This is achieved mainly by omitting the busbars and reduction of the finger length. The improvement of the module fill factor results in an increase in the module performance of 0.9% absolute before lamination in comparison with the efficiency of the initial 125 × 125 mm² BJBC solar cell. Hence, this interconnection scheme enables the transfer of high cell efficiencies to the module. Copyright © 2014 John Wiley & Sons, Ltd.     

Novel field‐effect passivation for nanostructured Si solar cells using interfacial sulfur incorporation

Surface passivation of a nanostructured Si solar cells plays a crucial role in collecting photogenerated carriers by mitigating carrier recombination at surface defect sites. Interface modification by additional sulfur (S) incorporation is proposed to enhance the field‐effect passivation performance. Here, we report that simple annealing in a H₂S ambient induced additional negative fixed charges at the interface between atomic‐layer‐deposited Al₂O₃ and nanostructured Si. Annealing at various temperatures allowed us to control the S concentration and the fixed charge density. The optimized S incorporation at the interface significantly enhanced the negative fixed charge density and the minority carrier lifetime up to ~5.9 × 10¹² cm⁻² and ~780 μs, respectively. As a result, the internal quantum efficiency was nearly two times higher in the blue response region than that of control cells without S incorporation. Copyright © 2017 John Wiley & Sons, Ltd.     

Effects of ultra‐high flux and intensity distribution in multi‐junction solar cells

We report results of high‐flux experiments on tandem solar cells, with a real‐sun probe predicated on mini‐dish fiber‐optic concentrators. Experimental results and their interpretation focus on: (a) a striking insensitivity of cell efficiency to flux map; (b) the predictability of the flux values at which cell efficiency peaks; and (c) performance of the same cell architecture at markedly smaller cell area. Copyright © 2006 John Wiley & Sons, Ltd.     

Metal versus dielectric back reflector for thin‐film Si solar cells with impact of front electrode surface texture

Thin‐film Si solar cells employ a back reflector (BR) for a more efficient use of the long wavelength light. Here, we have carried out a cross evaluation of metal (Ag‐based) and dielectric (white paint‐based) BR designs. Conclusive results have been reached regarding the most suitable BR type depending on the front electrode morphology, both with crater‐like and pyramidal texture. The ZnO/Ag BR is found to be optically more efficient because of improved light trapping, although the gain tends to vanish for rougher front electrodes. Thanks to non‐conventional Raman intensity measurements, this dependence on the front texture has been linked to the different weight of front and back interfaces in the light trapping process for the different morphologies. With rougher substrates, because the minor optical gain is accompanied by sputter‐induced electronic deterioration of the solar cell during the ZnO buffer layer deposition, the white paint‐based BR design is preferred. Copyright © 2016 John Wiley & Sons, Ltd.     

InGaP//GaAs//c‐Si 3‐junction solar cells employing spectrum‐splitting system

In this work, we practically demonstrated spectrum‐splitting approach for advances in efficiency of photovoltaic cells. Firstly, a‐Si:H//c‐Si 2‐junction configuration was designed, which exhibited 24.4% efficiency with the spectrum splitting at 620 nm. Then, we improved the top cell property by employing InGaP cells instead of the a‐Si:H, resulting in an achievement of efficiency about 28.8%. In addition, we constructed 3‐junction spectrum‐splitting system with two optical splitters, and GaAs solar cells as middle cell. This InGaP//GaAs//c‐Si architecture was found to deliver 30.9% conversion efficiency. Our splitting system includes convex lenses for light concentration about 10 suns, which provided concentrated efficiency exceeding 33.0%. These results suggest that our demonstration of 3‐junction spectrum‐splitting approach can be a promising candidate for highly efficient photovoltaic technologies. Copyright © 2016 John Wiley & Sons, Ltd.     

Laser processing of Al2O3/a‐SiCx:H stacks: a feasible solution for the rear surface of high‐efficiency p‐type c‐Si solar cells

We explore the potential of laser processing aluminium oxide (Al₂O₃)/amorphous silicon carbide (a‐SiC_x:H) stacks to be used at the rear surface of p‐type crystalline silicon (c‐Si) solar cells. For this stack, excellent quality surface passivation is measured with effective surface recombination velocities as low as 2 cm/s. By means of an infrared laser, the dielectric film is locally opened. Simultaneously, part of the aluminium in the Al₂O₃ film is introduced into the c‐Si, creating p+ regions that allow ohmic contacts with low‐surface recombination velocities. At optimum pitch, high‐efficiency solar cells are achievable for substrates of 0.5–2.5 Ω cm. Copyright © 2012 John Wiley & Sons, Ltd.     

Ultrathin PECVD epitaxial Si solar cells on glass via low‐temperature transfer process

Fabrication of high‐quality ultrathin monocrystalline silicon layers and their transfer to low‐cost substrates are key steps for flexible electronics and photovoltaics. In this work, we demonstrate a low‐temperature and low‐cost process for ultrathin silicon solar cells. By using standard plasma‐enhanced chemical vapor deposition (PECVD), we grow high‐quality epitaxial silicon layers (epi‐PECVD) from SiH₄/H₂ gas mixtures at 175 °C. Using secondary ion mass spectrometry and transmission electron microscopy, we show that the porosity of the epi‐PECVD/crystalline silicon interface can be tuned by controlling the hydrogen accumulation there. Moreover, we demonstrate that 13–14% porosity is a threshold above which the interface becomes fragile and can easily be cleaved. Taking advantage of the H‐rich interface fragility, we demonstrate the transfer of large areas (∽10 cm²) ultrathin epi‐PECVD layers (0.5–5.5 µm) onto glass substrates by anodic bonding and moderate annealing (275–350 °C). The structural properties of transferred layers are assessed, and the first PECVD epitaxial silicon solar cells transferred on glass are characterized. Copyright © 2016 John Wiley & Sons, Ltd.     

Preparation and measurement of highly efficient a‐Si:H single junction solar cells and the advantages of μc‐SiOx:H n‐layers

Reducing the optical losses and increasing the reflection while maintaining the function of doped layers at the back contact in solar cells are important issues for many photovoltaic applications. One approach is to use doped microcrystalline silicon oxide (μc‐SiO_x:H) with lower optical absorption in the spectral range of interest (300 nm to 1100 nm). To investigate the advantages, we applied the μc‐SiO_x:H n‐layers to a‐Si:H single junction solar cells. We report on the comparison between amorphous silicon (a‐Si:H) single junction solar cells with either μc‐SiO_x:H n‐layers or non‐alloyed silicon n‐layers. The origin of the improved performance of a‐Si:H single junction solar cells with the μc‐SiO_x:H n‐layer is identified by distinguishing the contributions because of the increased transparency and the reduced refractive index of the μc‐SiO_x:H material. The solar cell parameters of a‐Si:H solar cells with both types of n‐layers were compared in the initial state and after 1000 h of light soaking in a series of solar cells with various absorber layer thicknesses. The measurement procedure for the determination of the solar cell performance is described in detail, and the measurement accuracy is evaluated and discussed. For an a‐Si:H single junction solar cell with a μc‐SiO_x:H n‐layer, a stabilized efficiency of 10.3% after 1000 h light soaking is demonstrated. Copyright © 2015 John Wiley & Sons, Ltd.     

Laser‐fired contact optimization in c‐Si solar cells

In this work we study the optimization of laser‐fired contact (LFC) processing parameters, namely laser power and number of pulses, based on the electrical resistance measurement of an aluminum single LFC point. LFC process has been made through four passivation layers that are typically used in c‐Si and mc‐Si solar cell fabrication: thermally grown silicon oxide (SiO₂), deposited phosphorus‐doped amorphous silicon carbide (a‐SiC_x/H(n)), aluminum oxide (Al₂O₃) and silicon nitride (SiN_x/H) films. Values for the LFC resistance normalized by the laser spot area in the range of 0.65–3 mΩ cm² have been obtained. Copyright © 2011 John Wiley & Sons, Ltd.     

Back‐contacted back‐junction n‐type silicon solar cells featuring an insulating thin film for decoupling charge carrier collection and metallization geometry

In this study, back‐contacted back‐junction n‐type silicon solar cells featuring a large emitter coverage (point‐like base contacts), a small emitter coverage (point‐like base and emitter contacts), and interdigitated metal fingers have been fabricated and analyzed. For both solar cell designs, a significant reduction of electrical shading losses caused by an increased recombination in the non‐collecting base area on the rear side was obtained. Because the solar cell designs are characterized by an overlap of the B‐doped emitter and the P‐doped base with metal fingers of the other polarity, insulating thin films with excellent electrical insulation properties are required to prevent shunting in these overlapping regions. Thus, with insulating thin films, the geometry of the minority charge carrier collecting emitter diffusion and the geometry of the interdigitated metal fingers can be decoupled. In this regard, plasma‐enhanced chemical vapor deposited SiO₂ insulating thin films with various thicknesses and deposited at different temperatures have been investigated in more detail by metal‐insulator‐semiconductor structures. Furthermore, the influence of different metal layers on the insulation properties of the films has been analyzed. It has been found that by applying a SiO₂ insulating thin film with a thickness of more than 1000 nm and deposited at 350 °C to solar cells fabricated on 1 Ω cm and 10 Ω cm n‐type float‐zone grown silicon substrates, electrical shading losses could be reduced considerably, resulting in excellent short‐circuit current densities of more than 41 mA/cm² and conversion efficiencies of up to 23.0%. Copyright © 2012 John Wiley & Sons, Ltd.     

Recent progress of high efficiency Si thin‐film solar cells in large area

Si thin‐film solar cells are suitable to the sunbelt region due to a low temperature coefficient and to building integrated photovoltaics owing to flexible size, easily controllable transmittance, and an aesthetic design. Nevertheless, the application is limited until now due to their low conversion efficiency. We have developed a triple junction cell (a‐Si:H/a‐SiGe:H/µc‐Si:H) providing efficient light utilization. For the high efficiency, we have focused on the smoothing of high haze TCO, a low absorption window layer, a low refractive index interlayer, uniformity control of the thickness and crystalline volume fraction in the microcrystalline silicon layer, and a low absorption back reflector. Through these activities, we have achieved a world record of 13.4% stabilized efficiency in the small size cell (1 cm²) and 10.5% stabilized efficiency in the large area module (1.1 × 1.3 m²), certificated by the National Renewable Energy Laboratory and Advanced Industrial Science and Technology, respectively. This result was presented in solar cell efficiency tables (Version 41). At this moment, we have increased a stabilized efficiency of 11.2% (Output power 160 W) in the large area module. We will report on the advanced materials in detail for high efficiency. Copyright © 2014 John Wiley & Sons, Ltd.