Influence of surface composition on back‐contact performance in CdTe/CdS PV devices

The atomic composition of the surface of the CdTe layer in a CdTe/CdS photovoltaic (PV) device has a significant influence on the quality of the electrical contact to this layer. This paper reports the results of a systematic study that correlates the composition of the back surface as measured with X‐ray photoelectron spectroscopy (XPS) with pre‐contact processing and device performance. We found that certain processing steps produce an oxide layer that degrades device performance by producing a metal – oxide – semiconductor (MOS) contact, rather than the intended metal – semiconductor, Schottky barrier contact. We also found that the as‐deposited CdTe film is cadmium‐rich for several hundred angstroms at the back surface. This n‐type layer may impede current flow for majority holes, degrading device performance. Published in 2000 by John Wiley & Sons, Ltd.     

Optimization of vapor post‐deposition processing for evaporated CdS/CdTe solar cells

The effects of thermal annealing in conjunction with CdCl₂ vapor heat treatment on the properties of CdTe/CdS thin films and devices deposited by physical vapor deposition are reported. Results are compared for three treatment variations: high‐temperature anneal only, high‐temperature anneal followed by CdCl₂ vapor heat treatment and CdCl₂ vapor heat treatment only. X‐ray diffraction, transmission electron microscopy and scanning electron microscopy show improved crystallographic properties of the CdTe film and reduced CdS/CdTe interdiffusion when a high‐temperature anneal is used prior to CdCl₂ treatment. The CdTe/CdS solar cells fabricated using an anneal at 550°C in argon prior to the CdCl₂ vapor heat treatment exhibited improved electrical characteristics compared to cells fabricated with no anneal step, yielding an open‐circuit voltage exceeding 850 mV. Copyright © 1999 John Wiley & Sons, Ltd.     

CuxS背接触层制备及在碲化镉薄膜太阳电池中应用研究

本文采用化学水浴法沉积CuxS薄膜,通过改变Cu元素比例研究其对碲化镉电池效率的影响。研究表明化学水浴法沉积的CuxS是非晶的,采用适当退火条件可以使其晶化,随着退火温度的提高,薄膜变得致密且结晶明显。CuxS薄膜厚度对电池性能有很大的影响,结果表明,随着CuxS薄膜厚度增加,电池性能先增加后减少。薄膜厚度为75nm时,CdS/CdTe电池性能最佳,达到了最高转化效率(η)为12.19%,填充因子(FF)为68.82%,开路电压(Voc)为820mV。     

近空间升华沉积CdTe薄膜的微结构和PL谱

用近空间升华法在CdS薄膜上沉积了CdTe薄膜.研究了在两种保护气氛下所沉积的多晶CdTe薄膜在后处理后的微结构、表面形貌及光致发光(PL)谱,并研究了CdTe表面和CdS/CdTe界面的PL谱的区别,根据薄膜的微结构对碲化镉在太阳电池中的应用进行了讨论.     

Macroscopic Nanotemplating of Semiconductor Films with Hydrogen‐Bonded Lyotropic Liquid Crystals

Aqueous gel‐like lyotropic liquid crystals with extensive hydrogen bonding and nanoscale hydrophilic compartments have been used to define the growth of macroscopic nanotemplated CdS and CdTe thin films. These mesoporous semiconductor films contain a hexagonal array of 2.5 nm pores, 7 nm center‐to‐center, that extend in an aligned fashion perpendicular to the substrate. The CdS is deposited on a polypropylene substrate by a reaction between Cd(NO₃)₂ dissolved in the liquid crystal and H₂S transported via diffusion through the substrate. The CdTe is electrodeposited on indium‐tin‐oxide‐coated glass from TeO₂ and Cd(NO₃)₂, both of which are dissolved in the liquid‐crystal template. The porous nature of the CdTe films enables chemical transformations of the entire bulk of the film. As electrodeposited, the CdTe films are Te rich and, in contrast to a non‐templated film, the excess Te could be removed via a chemical treatment, proving the continuity of the pores in the nanotemplated films. These results suggest that liquid‐crystal lithography with hydrogen‐bonding amphiphiles may be a useful approach to create materials with nanoscale features over macroscopic dimensions.     

太阳电池中CdS薄膜的制备及其性能的研究

分别采用化学池沉积(CBD)和真空蒸发法,在三种衬底(玻片、ITO玻片、SnO2玻片)上沉积CdS薄膜,并利用扫描电镜(SEM)、透射光谱、X射线衍射(XRD)等方法对沉积膜进行了测试分析,同时阐述了两种不同方法下CdS膜的生长沉积机制。     

Copper migration in cdte heterojunction solar cells

CdTe solar cells were fabricated by depositing a Au/Cu contact with Cu thickness in the range of 50 to 150Å on polycrystalline CdTe/CdS/SnO₂/glass structures. The increase in Cu thickness improves ohmic contact and reduces series resistance (R_s), but the excess Cu tends to diffuse into CdTe and lower shunt resistance (R_sh) and cell performance. Light I-V and secondary ion mass spectros-copy (SIMS) measurements were performed to understand the correlations between the Cu contact thickness, the extent of Cu incorporation in the CdTe cells, and its impact on the cell performance. The CdTe/CdS/SnO₂/glass, CdTe/ CdS/GaAs, and CdTe/GaAs structures were prepared in an attempt to achieve CdTe films with different degrees of crystallinity and grain size. A large grain polycrystalline CdTe thin film solar cell was obtained for the first time by selective etching the GaAs substrate coupled with the film transfer onto a glass substrate. SIMS measurement showed that poor crystallinity and smaller grain size of the CdTe film promotes Cu diffusion and decreases the cell performance. Therefore, grain boundaries are the main conduits for Cu migration and larger CdTe grain size or alternate method of contact formation can mitigate the adverse effect of Cu and improve the cell performance.     

Identification of the impurity phase in chemically deposited CdS thin films

Identification of the impurity phase present in chemically deposited CdS thin films and in the precipitate used for screen printing CdS/CdTe solar cells is reported in this paper. X-ray diffraction (XRD) studies of the films and the precipitate showed that the impurity phase is a mixture of cadmium oxide sulphate (Cd₃O₂SO₄) and cadmium oxide (CdO). Analysis of the films and the powders obtained using thiourea (TU) and thioacetamide (TA) as sulphursing agents showed that the impurity phase is predominantly present when TU is used in the chemical bath. The high conductivity shown by chemically deposited CdS films (using TU) when annealed at higher temperatures in air is attributed to the predominance of the conducting CdO phase in the film.     

The effect of oxygen on interface microstructure evolution in CdS/CdTe solar cells

Microstructural changes at the CdS/CdTe solar cell interface where close‐spaced sublimation (CSS) is used as the growth technique to deposit the p‐type CdTe absorber layer are studied by systematic layer characterization at various stages during heterojunction growth. CdS layers grown by both chemical bath deposition (CBD) and CSS provide a basis for determining the effects of CdS crystallinity, grain size, and oxygen content on the subsequent CdTe layer. As‐grown CBD CdS films exhibit small grains and variations in optical properties attributed to film impurities. In contrast, CSS yields CdS films with good crystallinity, larger grains, and nearly ideal optical properties. The hexagonal nature of CSS‐grown CdS is seen to nucleate hexagonal CdTe during the initial stages of CdTe film growth. Cubic CdS deposited by CBD in contrast promotes cubic CdTe nucleation. Oxygen anneals in the latter case can aid hexagonal CdTe nucleation. Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) of the CdS/CdTe interface show CdS‐dependent differences in interdiffusion at the interface. This interdiffusion appears to be determined by the oxygen level in the CdS. When low‐oxygen‐containing CSS CdS films are used, sulfur diffusion is substantial, leading to significant consumption of the CdS layer. When these same films are annealed in oxygen, the consumption is reduced. Te diffusion into the CdS layer is also observed to decrease with oxygen anneals. Optical modeling shows that Te alloying with the CdS layer can greatly reduce the short‐circuit current of CdS/CdTe devices. Copyright © 2002 John Wiley & Sons, Ltd.     

氩氧气氛下沉积的CdTe薄膜及太阳电池的性质

研究了在氩氧气氛下近空间升华沉积CdTe的技术．发展了在表面十分平整的玻璃衬底上沉积优质CdTe薄膜的方法,对比了在玻璃衬底和CdS薄膜上CdTe薄膜的结构特征．通过研究氧分压对CdTe薄膜择优取向的影响,证实了在恰当的近空间升华沉积过程中,两种衬底上的CdTe薄膜具有相同的结构．研究了玻璃衬底上CdTe薄膜的电学与光学性质,观察了后处理对上述薄膜性质的影响,并研制出了效率达1338%的小面积CdTe 薄膜太阳电池．     

ZnSe/ITO thin films:candidate for CdTe solar cell window layer

The crystal structure, electrical and optical properties of ZnSe thin films deposited on an In₂O₃:Sn (ITO) substrate are evaluated for their suitability as the window layer of CdTe thin film solar cells. ZnSe thin films of 80, 90, and 100 nm thickness were deposited by a physical vapor deposition method on Indium tin oxide coated glass substrates. The lattice parameters are increased to 5.834 Å when the film thickness was 100 nm, which is close to that of CdS. The crystallite size is decreased with the increase of film thickness. The optical transmission analysis shows that the energy gap for the sample with the highest thickness has also increased and is very close to 2.7 eV. The photo decay is also studied as a function of ZnSe film thickness.     

Comparative study between CBD and SILAR methods for deposited TiO2, CdS,and TiO2/CdS core-shell structure

TiO₂, CdS, and TiO₂/CdS core–shell structures were deposited on fluorine-doped tin oxide (FTO)-coated glass substrate using chemical methods. TiO₂ thin films were prepared by chemical bath deposition (CBD) and successive ionic layer adsorption and reaction (SILAR). SILAR was also utilized to deposit CdS film on TiO₂ thin film. The structural, surface morphology, and optical characteristics of FTO/TiO₂, FTO/CdS, and FTO/TiO₂/CdS core- shell structures were evaluated. The FTO/TiO₂ films produced by both methods conformed to anatase and rutile phase structures. Corresponding XRD pattern of the FTO/TiO₂/CdS sample exhibited one peak corresponding to hexagonal (101) for CdS. Scanning electron micrographs showed nanorod structures for the TiO₂ thin films deposited by CBD, contrary to the nanograin structure formed by SILAR. Optical results showed highly extended absorption edge to the visible region for the FTO/TiO₂/CdS structure deposited by the two methods. The TiO₂ thin films deposited by CBD exhibited higher absorption in the visible region than nanograined TiO₂ thin films deposited by SILAR because of the high surface area of the TiO₂ nanorod. Photoelectrochemical (PEC) properties of FTO/TiO₂, and FTO/TiO₂/CdS system were also examined. PEC behavior of FTO/TiO₂/CdS was compared with that of FTO/TiO₂ deposited by CBD and SILAR. The TiO₂ nanorod thin films deposited by CBD showed evidently enhanced PEC performance compared with nanograined TiO₂ thin films deposited by SILAR.     

Growth of CdTe Films on Amorphous Substrates Using CaF<Subscript>2</Subscript> Nanorods as a Buffer Layer

Continuous biaxially textured CdTe films were grown on biaxial CaF₂ buffer layers. The CaF₂ nanorods were grown by oblique angle vapor deposition and possessed a {111} 〈121〉 biaxial texture. The CdTe film was deposited by metal organic chemical vapor deposition (MOCVD). Film morphology and the CdTe/CaF₂ interface were studied by scanning electron microscopy and transmission electron microscopy. Characterization showed that small CdTe grains formed initially from the CaF₂ surfaces. These small grains then merged into large columnar grains during growth. Analysis revealed that the crystalline orientation of the CdTe film followed the biaxial texture of the CaF₂ nanorods.     

CdTe solar cell in a novel configuration

Polycrystalline thin‐film CdTe/CdS solar cells have been developed in a configuration in which a transparent conducting layer of indium tin oxide (ITO) has been used for the first time as a back electrical contact on p‐CdTe. Solar cells of 7·9% efficiency were developed on SnO_x:F‐coated glass substrates with a low‐temperature (<450°C) high‐vacuum evaporation method. After the CdCl₂ annealing treatment of the CdTe/CdS stack, a bromine methanol solution was used for etching the CdTe surface prior to the ITO deposition. The unique features of this solar cell with both front and back contacts being transparent and conducting are that the cell can be illuminated from either or both sides simultaneously like a ‘bi‐facial’ cell, and it can be used in tandem solar cells. The solar cells with transparent conducting oxide back contact show long‐term stable performance under accelerated test conditions. Copyright © 2004 John Wiley & Sons, Ltd.     

A Coherently Strained Monoclinic [111]PbTiO3 Film Exhibiting Zero Poisson's Ratio State

[111]‐Oriented perovskite oxide films exhibit unique interfacial and symmetry breaking effects, which are promising for novel quantum materials as topological insulators and polar metals. However, due to strong polar mismatch and complex structural reconstructions on (111) surfaces/interfaces, it is still challenging to grow high quality [111] perovskite heterostructures, let alone explore the as‐resultant physical properties. Here, the fabrication of ultrathin PbTiO₃ films grown on a SrTiO₃(111) substrate with atomically defined surfaces, by pulsed laser deposition, is reported. High‐resolution scanning transmission electron microscopy and X‐ray diffraction reveal that the as‐grown [111]PbTiO₃ films are coherent with the substrate and compressively strained along all in‐plane directions. In contrast, the out‐of‐plane lattices are almost unchanged compared with that of bulk PbTiO₃, resulting in a 4% contraction in unit cell volume and a nearly zero Poisson's ratio. Ferroelectric displacement mapping reveals a monoclinic distortion within the compressed [111]PbTiO₃, with a polarization larger than 50 µC cm^?2. The present findings, as further corroborated by phase field simulations and first principle calculations, differ significantly from the common [001]‐oriented films. Fabricating oxide films through [111] epitaxy may facilitate the formation of new phase components and exploration of novel physical properties for future electronic nanodevices.     

Optimization of physical properties of vacuum evaporated CdTe thin films with the application of thermal treatment for solar cells

This paper reports the optimization of physical properties of cadmium telluride (CdTe) thin films with the application of thermal treatment. The films of thickness 650 nm were deposited on glass and indium tin oxide (ITO) coated glass substrates employing vacuum evaporation followed by thermal annealing in the temperature range 250–450 °C. The films were characterized using X-ray diffraction (XRD), source meter and atomic force microscopy (AFM) for structural, electrical and surface topographical properties respectively. The X-ray diffraction patterns reveal that films are polycrystalline with predominant zinc-blende structure having preferred reflection (111). The structural parameters are calculated and discussed in detail. The current–voltage characteristics show Ohmic behavior and the electrical conductivity is found to increase with annealing treatment. The AFM studies show that the surface roughness of films is observed to increase with annealing. The experimental results reveal that the thermal annealing plays an important role to enhance the physical properties of CdTe thin films and annealed films may be used as absorber layer in CdTe/CdS solar cells.     

Control of the crystalline phase and morphology of CdS deposited on microstructured surfaces by chemical bath deposition

Chemical bath deposition (CBD) has been used extensively to deposit thin films of CdS for window layers in solar cells. The microtopography or roughness of the surface, however, can affect the quality of the film by influencing the morphology, uniformity, or crystal phase of the CdS film. Here, we have demonstrated that thin films of CdS can be successfully patterned on surfaces bearing micropillars as a model surface for roughness. The phase purity of CdS deposited on the micropillar surfaces is uniform and conformal with the formation of packed clusters on the micropillars at pH 10 that form flower-like structures at long deposition times. Smaller crystallites were observed on micropillar arrays at pH 8 with “network” like structures observed at long deposition times. Additionally, by controlling the pH of the chemical bath, the hexagonal and cubic crystal phases of CdS were both accessible in high purity at temperatures as low as 85 °C.     

Focussed ion beam and field emission gun–scanning electron microscopy for the investigation of voiding and interface phenomena in thin‐film solar cells

The use of focussed ion beam milling combined with high resolution scanning electron microscopy analysis as a characterisation tool for thin‐film photovoltaics is reported. CdTe solar cell cross sections are examined in high detail with as‐grown and CdCl₂‐treated devices being compared. Observed changes in microstructure of the thin‐film layers are related to the device performance. The CdCl₂ treatment is shown to cause a reduction in the CdTe defect density at regions close to the interface and induce recrystallization of the CdS layer. Furthermore, the focussed ion beam technique is shown to reveal voids formed within the device's thin‐film layers at various processing stages that have not been previously observed in working cell structures. The back‐contacting Te‐rich layer resulting from nitric–phosphoric acid etching is also observed, with the etched layer being seen to propagate down the CdTe grain boundaries. Copyright © 2011 John Wiley & Sons, Ltd.     

Influence of the layer parameters on the performance of the CdTe solar cells

Influence of the layer parameters on the performances of the CdTe solar cells is analyzed by SCAPS-1D. The ZnO:Al film shows a high efficiency than SnO2:F. Moreover, the thinner window layer and lower defect density of CdS films are the factor in the enhancement of the short-circuit current density. As well, to increase the open-circuit voltage, the responsible factors are low defect density of the absorbing layer CdTe and high metal work function. For the low cost of cell production, ultrathin film CdTe cells are used with a back surface field (BSF) between CdTe and back contact, such as PbTe. Further, the simulation results show that the conversion efficiency of 19.28% can be obtained for the cell with 1-μm-thick CdTe, 0.1-μm-thick PbTe and 30-nm-thick CdS.     

Stable CdTe thin film solar cells with a MoOx back‐contact buffer layer

MoO_x thin films were employed as a buffer layer in the back contact of CdTe solar cells. A monograined CdS layer was employed as the window layer to reduce light absorption. The insertion of a MoO_x buffer layer in the back contact greatly reduced the Schottky barrier leading to increased fill factor and open‐circuit voltage. A CdTe solar cell, with an efficiency as high as 14.2%, was fabricated. The use of a MoO_x buffer layer made it possible to fabricate high‐efficient CdTe solar cell with much less Cu in the back contact, thus greatly enhancing the cell stability. Copyright © 2015 John Wiley & Sons, Ltd.